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产品型号BLF647A,112的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
BLF647  
UHF power LDMOS transistor  
Product specification  
2001 Nov 27  
Supersedes data of 2001 Aug 02  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
FEATURES  
PINNING - SOT540A  
PIN  
High power gain  
DESCRIPTION  
Easy power control  
Excellent ruggedness  
1
2
3
4
5
drain 1  
drain 2  
gate 1  
gate 2  
Source on underside eliminates DC isolators, reducing  
common mode inductance  
Designed for broadband operation (HF to 800 MHz)  
source, connected to flange  
Internal input damping for excellent stability over the  
whole frequency range.  
1
3
2
APPLICATIONS  
Communication transmitter applications in the  
HF to 800 MHz frequency range.  
5
4
Top view  
MBK777  
DESCRIPTION  
Silicon N-channel enhancement mode lateral D-MOS  
push-pull transistor in a SOT540A package with ceramic  
cap. The common source is connected to the mounting  
flange.  
Fig.1 Simplified outline.  
QUICK REFERENCE DATA  
RF performance at Th = 25 °C in a common source test circuit.  
MODE OF  
OPERATION  
f
VDS  
(V)  
PL  
(W)  
Gp  
(dB)  
ηD  
(%)  
dim  
(dBc)  
(MHz)  
CW, class-AB  
600  
28  
28  
120  
>14.5  
>14.5  
>55  
>40  
2-tone,  
class-AB  
f1 = 600; f2 = 600.1  
120 (PEP)  
≤−26  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
VDS drain-source voltage  
MIN.  
MAX.  
65  
UNIT  
V
VGS  
ID  
gate-source voltage  
drain current (DC)  
±15  
18  
V
A
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tmb 25 °C  
290  
+150  
200  
W
°C  
°C  
65  
CAUTION  
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport  
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.  
2001 Nov 27  
2
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 290 W 0.6  
thermal resistance from mounting base to heatsink 0.2  
CONDITIONS  
VALUE  
UNIT  
K/W  
K/W  
Rth j-mb  
Rth mb-h  
CHARACTERISTICS  
Tj = 25 °C per section unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
65  
TYP. MAX. UNIT  
V(BR)DSS  
VGSth  
IDSS  
drain-source breakdown voltage  
gate-source threshold voltage  
drain-source leakage current  
drain cut-off current  
VGS = 0; ID = 1.4 mA  
V
VDS = 20 V; ID = 140 mA  
VGS = 0; VDS = 28 V  
4
5.5  
1.2  
V
µA  
A
IDSX  
VGS = VGSth + 9 V; VDS = 10 V  
VGS = ±15 V; VDS = 0  
VDS = 20 V; ID = 4 A  
18  
IGSS  
gate leakage current  
25  
nA  
S
gfs  
forward transconductance  
drain-source on-state resistance  
input capacitance  
4
RDSon  
Ciss  
VGS = VGSth + 9 V; ID = 4 A  
160  
80  
mΩ  
pF  
VGS = 0; VDS = 28 V; f = 1 MHz;  
note 1  
Coss  
Crss  
output capacitance  
VGS = 0; VDS = 28 V; f = 1 MHz  
VGS = 0; VDS = 28 V; f = 1 MHz  
43  
6
pF  
pF  
feedback capacitance  
Note  
1. Capacitance values of the die only.  
MGW546  
100  
handbook, halfpage  
C
oss  
(pF)  
80  
60  
40  
20  
0
0
10  
20  
30  
40  
V
50  
(V)  
DS  
VGS = 0; f = 1 MHz; Tj = 25 °C.  
Fig.2 Output capacitance as a function of  
drain-source voltage; typical values per  
section.  
2001 Nov 27  
3
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
APPLICATION INFORMATION  
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.2 K/W, unless otherwise specified.  
f
VDS  
(V)  
PL  
(W)  
Gp  
(dB)  
ηD  
(%)  
dim  
(dBc)  
MODE OF OPERATION  
(MHz)  
CW, class-AB  
600  
28  
28  
32  
32  
120  
>14.5  
>14.5  
>55  
>40  
≤−26  
2-tone, class-AB  
CW, class-AB  
f1 = 600; f2 = 600.1  
800  
120 (PEP)  
150  
typ. 12.5  
typ. 13  
typ. 60  
typ. 45  
2-tone, class-AB  
f1 = 800; f2 = 800.1  
150 (PEP)  
typ. 30  
Ruggedness in class-AB operation  
The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the  
following conditions: VDS = 28 V; f = 100 MHz at rated load power.  
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.  
Impedances (per section)  
At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 and ZL = 2.7 + j0.7 .  
At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 and ZL = 1.8 + j0.7 .  
2001 Nov 27  
4
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
Application at 600 MHz  
MGW541  
MGW540  
0
20  
80  
handbook, halfpage  
handbook, halfpage  
d
G
p
(dB)  
η
(%)  
im  
D
G
p
(dBc)  
20  
15  
60  
d
d
3
η
D
40  
60  
10  
5
40  
20  
0
5
80  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
P
(PEP) (W)  
P
(PEP) (W)  
L
L
Th = 25 °C; VDS = 28 V; IDQ = 1 A.  
Th = 25 °C; VDS = 28 V; IDQ = 1 A.  
2-tone: f1 = 600 MHz (6 dB); f2 = 600.1 MHz (6 dB)  
2-tone: f1 = 600 MHz (6 dB); f2 = 600.1 MHz (6 dB)  
measured in 600 MHz test circuit.  
measured in 600 MHz test circuit.  
Fig.3 Power gain and drain efficiency as functions  
of peak envelope load power; typical  
values.  
Fig.4 Intermodulation distortion as a function of  
peak envelope output power; typical values.  
MGW542  
20  
80  
handbook, halfpage  
G
p
(dB)  
η
(%)  
D
G
p
15  
60  
η
D
10  
5
40  
20  
0
0
0
50  
100  
150  
200  
P
(W)  
L
Th = 25 °C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz;  
measured in 600 MHz test circuit.  
Fig.5 Power gain and drain efficiency as functions  
of load power; typical values.  
2001 Nov 27  
5
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+
V
D
C20  
3
C7  
R2  
L14  
R4  
L5  
8
L15  
L3  
L7  
C18  
C19  
L9  
C15  
L11  
B2  
C1  
C2  
50  
input  
50 Ω  
output  
L1  
L2  
C17  
C11  
C10  
C13  
B1  
C3 C5  
C6  
C12  
C14  
L13  
L12  
C16  
L10  
MGW539  
TR1  
L8  
L4  
L16  
L6  
R3  
R1  
+
V
bias  
C9  
C8  
Dimensions in mm.  
Fig.6 Class-AB common source 600 MHz test circuit.  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
List of components class-AB 600 MHz test circuit (see Figs 6 and 7)  
CATALOGUE  
No.  
COMPONENT  
DESCRIPTION  
VALUE  
DIMENSIONS  
C1, C2  
C3  
multilayer ceramic chip capacitor; note 1 30 pF  
multilayer ceramic chip capacitor; note 1 8.2 pF  
multilayer ceramic chip capacitor; note 1 16 pF  
C5  
C6  
Tekelec trimmer  
0.6 to 7.5 pF  
C7, C8  
C9  
multilayer ceramic chip capacitor; note 1 100 pF  
electrolytic capacitor  
10 µF  
C10  
multilayer ceramic chip capacitor; note 2 2 pF  
multilayer ceramic chip capacitor; note 2 10 pF  
multilayer ceramic chip capacitor; note 2 8.2 pF  
multilayer ceramic chip capacitor; note 2 1.5 pF  
multilayer ceramic chip capacitor; note 2 100 pF  
C11, C12  
C13  
C14  
C15, C16, C17  
C18  
SMD capacitor  
1 µF  
2222 595 16754  
C19  
electrolytic capacitor  
electrolytic capacitor  
semi rigid coax UT70-25  
stripline; note 3  
470 µF  
100 µF  
C20  
L1, L2  
L3, L4  
L5, L6  
L7, L8  
L9, L10  
L11, L12  
L13  
Z = 25 Ω ±1.5 30.6 mm  
15 × 10 mm  
stripline; note 3  
5.5 × 15 mm  
10 × 10 mm  
15 × 5 mm  
stripline; note 3  
stripline; note 3  
stripline; note 3  
48.5 × 2.4 mm  
10 × 2.4 mm  
stripline; note 3  
L14  
ferrite  
L15, L16  
B1  
Coilcraft SMD coil 1008CS-102XKBC  
semi rigid coax (lambda/2)  
semi rigid coax balun UT70-25  
resistor  
1 µH  
Z = 50 Ω ±1.5 lambda/2  
B2  
Z = 25 Ω ±1.5 48.5 mm  
R1  
1 kΩ  
R2, R3  
R4  
resistor  
100 Ω  
3,3 Ω  
resistor  
Notes  
1. American Technical Ceramics type 100A or capacitor of same quality.  
2. American Technical Ceramics type 180R or capacitor of same quality.  
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm.  
2001 Nov 27  
7
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
95  
95  
80  
C20  
+V  
+V  
D
bias  
R1  
C9  
L14  
R4  
R2  
C3  
L15  
C5  
C7  
B2  
C18  
C15  
C1  
C2  
L1  
L2  
C11 C13  
C10 C12 C14  
C16  
C6  
3
C17  
B1  
C8  
L16  
C19  
8
R3  
MGW547  
Dimensions in mm.  
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.  
Earth connections from the component side to the ground plane are made by through metallization.  
Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit.  
2001 Nov 27  
8
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
Application at 800 MHz  
MGW543  
MGW544  
20  
80  
0
handbook, halfpage  
handbook, halfpage  
G
p
η
d
D
im  
(dB)  
(%)  
(dBc)  
d
3
15  
10  
5
60  
20  
G
p
d
5
40  
20  
0
40  
60  
η
D
0
80  
0
100  
200  
300  
(PEP) (W)  
0
100  
200  
300  
P
P (PEP) (W)  
L
L
Th = 25 °C; VDS = 32 V; IDQ = 1 A.  
Th = 25 °C; VDS = 32 V; IDQ = 1 A.  
2-tone: f1 = 800 MHz (6 dB); f2 = 800.1 MHz (6 dB)  
2-tone: f1 = 800 MHz (6 dB); f2 = 800.1 MHz (6 dB)  
measured in 800 MHz test circuit.  
measured in 800 MHz test circuit.  
Fig.8 Power gain and drain efficiency as functions  
of peak envelope load power; typical  
values.  
Fig.9 Intermodulation distortion as a function of  
peak envelope output power; typical values.  
MGW545  
20  
80  
handbook, halfpage  
G
p
η
D
(dB)  
(%)  
15  
60  
G
p
10  
5
40  
20  
0
η
D
0
0
50  
100  
150  
200  
P
(W)  
L
Th = 25 °C; VDS = 32 V; IDQ = 1 A; CW, class-AB; f = 800 MHz;  
measured in 800 MHz test circuit.  
Fig.10 Power gain and drain efficiency as functions  
of load power; typical values.  
2001 Nov 27  
9
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,kfullapgwedhit  
+
V
D
C20  
3
C7  
R2  
3
L14  
R4  
L5  
8
L15  
L3  
L7  
C18  
C19  
L9  
C15  
L11  
B2  
C1  
C2  
50 Ω  
input  
50 Ω  
output  
L1  
L2  
C17  
C10  
C12  
C14  
B1  
C5  
C6  
C11  
C13  
L13  
L12  
C16  
L10  
MGW538  
TR1  
L8  
L4  
L16  
L6  
R1  
R3  
+
V
bias  
C9  
C8  
Dimensions in mm.  
Fig.11 Class-AB common source 800 MHz test circuit.  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
List of components class-AB 800 MHz test circuit (see Figs 11 and 12)  
CATALOGUE  
No.  
COMPONENT  
DESCRIPTION  
VALUE  
DIMENSIONS  
C1, C2  
C5  
multilayer ceramic chip capacitor; note 1 30 pF  
multilayer ceramic chip capacitor; note 1 10 pF  
C6  
tekelec trimmer  
0.6 to 7.5 pF  
C7, C8  
C9  
multilayer ceramic chip capacitor; note 1 100 pF  
electrolytic capacitor  
10 µF  
C10, C11  
C12, C13  
C14  
multilayer ceramic chip capacitor; note 2 8.2 pF  
multilayer ceramic chip capacitor; note 2 10 pF  
multilayer ceramic chip capacitor; note 2 4.7 pF  
multilayer ceramic chip capacitor; note 2 100 pF  
multilayer ceramic chip capacitor; note 2 20 pF  
C15, C16  
C17  
C18  
SMD capacitor  
1 µF  
2222 595 16754  
C19  
electrolytic capacitor  
electrolytic capacitor  
semi rigid coax UT70-25  
stripline; note 3  
470 µF  
100 µF  
C20  
L1, L2  
L3, L4  
L5, L6  
L7, L8  
L9, L10  
L11, L12  
L13  
Z = 25 Ω ±1.5 30.6 mm  
15 × 10 mm  
stripline; note 3  
5.5 × 15 mm  
10 × 10 mm  
15 × 5 mm  
stripline; note 3  
stripline; note 3  
stripline; note 3  
48.5 × 2.4 mm  
10 × 2.4 mm  
stripline; note 3  
L14  
ferrite  
L15, L16  
B1  
Coilcraft SMD coil 1008CS-102XKBC  
semi rigid coax (lambda/2)  
semi rigid coax balun UT70-25  
resistor  
1 µH  
Z = 50 Ω ±1.5 lambda/2  
B2  
Z = 25 Ω ±1.5 48.5 mm  
R1  
1 kΩ  
R2, R3  
R4  
resistor  
100 Ω  
3,3 Ω  
resistor  
Notes  
1. American Technical Ceramics type 100A or capacitor of same quality.  
2. American Technical Ceramics type 180R or capacitor of same quality.  
3. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm.  
2001 Nov 27  
11  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
95  
95  
80  
C20  
+V  
+V  
D
bias  
R1  
C9  
L14  
R4  
R2  
L15  
C5  
C7  
B2  
C18  
C15  
C1  
C2  
L1  
L2  
C11  
C13  
C16  
C6  
C10 C12  
3
C14  
C17  
3
B1  
C8  
L16  
C19  
8
R3  
MGW548  
Dimensions in mm.  
The components are situated on one side of the Rogers 5880 printed-circuit board, the other side is unetched and serves as a ground plane.  
Earth connections from the component side to the ground plane are made by through metallization.  
Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit.  
2001 Nov 27  
12  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
PACKAGE OUTLINE  
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads  
SOT540A  
D
A
F
D
1
U
B
1
q
C
w
H
M
M
C
2
c
1
1
2
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
3
4
A
w
b
M
Q
3
e
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
e
E
E
F
H
H
p
Q
q
U
U
w
w
w
3
UNIT  
1
1
1
1
2
1
2
8.51  
8.26  
5.77  
5.00  
22.05 22.05  
21.64 21.64  
10.26 10.31 1.78 15.75 18.72 3.38 2.72  
10.06 10.01 1.52 14.73 18.47 3.12 2.46  
34.16 9.91  
33.91 9.65  
0.15  
0.10  
27.94  
1.100  
0.25 0.51 0.25  
0.010 0.020 0.010  
mm  
10.21  
0.335  
0.325  
0.227  
0.197  
0.868 0.868  
0.852 0.852  
0.404 0.406 0.070 0.620 0.737 0.133 0.107  
0.396 0.394 0.060 0.580 0.727 0.123 0.097  
1.345 0.390  
1.335 0.380  
0.006  
0.004  
inches  
0.402  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
99-08-27  
99-12-28  
SOT540A  
2001 Nov 27  
13  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2001 Nov 27  
14  
Philips Semiconductors  
Product specification  
UHF power LDMOS transistor  
BLF647  
NOTES  
2001 Nov 27  
15  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2001  
SCA73  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613524/03/pp16  
Date of release: 2001 Nov 27  
Document order number: 9397 750 08838  
配单直通车
BLF647A,112产品参数
型号:BLF647A,112
生命周期:Obsolete
IHS 制造商:NXP SEMICONDUCTORS
包装说明:FLANGE MOUNT, R-CDFM-F4
针数:4
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.29.00.75
风险等级:5.62
外壳连接:SOURCE
配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:65 V
最大漏极电流 (ID):18 A
FET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4
元件数量:2
端子数量:4
工作模式:ENHANCEMENT MODE
最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL
认证状态:Not Qualified
表面贴装:YES
端子形式:FLAT
端子位置:DUAL
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
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