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产品型号BLP8G10S-45PGJ的Datasheet PDF文件预览

BLP8G10S-45P;  
BLP8G10S-45PG  
Power LDMOS transistor  
Rev. 4 — 29 October 2018  
Product data sheet  
1. Product profile  
1.1 General description  
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power  
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.  
Table 1.  
Application performance  
Typical RF performance at Tcase = 25 °C; IDq = 224 mA in common source class-AB production  
circuit.  
Test signal  
f
VDS  
(V)  
28  
PL(AV)  
(W)  
Gp  
ηD  
ACPR  
(dBc)  
49 [1]  
(MHz)  
960  
(dB)  
20.8  
(%)  
19.8  
2-carrier W-CDMA  
2.5  
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;  
carrier spacing = 5 MHz; per section unless otherwise specified.  
1.2 Features and benefits  
High efficiency  
Excellent ruggedness  
Designed for broadband operation (700 MHz to 1000 MHz)  
Excellent thermal stability  
High power gain  
Integrated ESD protection  
For RoHS compliance see the product details on the Ampleon website  
1.3 Applications  
W-CDMA  
LTE  
GSM  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLP8G10S-45P (SOT1223-4)  
1
2
3
4
5
drain 1  
drain 2  
gate 2  
gate 1  
source  
1
4
3
2
4
3
5
[1]  
1
2
aaa-007625  
BLP8G10S-45PG (SOT1224-4)  
1
2
3
4
5
drain 1  
drain 2  
gate 2  
gate 1  
source  
1
4
1
3
2
4
3
5
[1]  
2
aaa-007625  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BLP8G10S-45P  
-
-
plastic, heatsink small outline package; 4 leads (flat) SOT1223-4  
BLP8G10S-45PG  
plastic, heatsink small outline package; 4 leads  
SOT1224-4  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
case temperature  
-
VGS  
0.5  
+13  
V
Tstg  
65  
+150  
225  
C  
C  
C  
[1]  
[1]  
Tj  
-
-
Tcase  
150  
[1] Continuous use at maximum temperature will affect the reliability.  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
2 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Values specified for entire device.  
Symbol Parameter  
Conditions  
Typ Unit  
Rth(j-case) thermal resistance from junction to case Tcase = 85 C; PL = 5 W  
0.85 K/W  
6. Characteristics  
Table 6.  
DC characteristics  
Tcase = 25 °C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
-
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA  
65  
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 40 mA 1.5  
1.9  
-
2.3  
1.4  
-
V
VGS = 0 V; VDS = 28 V  
-
-
A  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
7.3  
VDS = 10 V  
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 2 A  
-
-
-
-
140  
nA  
S
forward transconductance  
3.0  
500  
-
-
RDS(on) drain-source on-state resistance VDS = 10 V; ID = 1.4 A  
GS = VGS(th) + 3.75 V  
m  
V
Table 7.  
RF characteristics  
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;  
1-64 DPCH; f1 = 952.5 MHz; f2 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 224 mA;  
T
case = 25 °C; per section in a class-AB production circuit unless otherwise specified.  
Symbol  
Parameter  
Conditions  
PL = 2.5 W  
PL = 2.5 W  
PL = 2.5 W  
PL = 2.5 W  
Min  
20  
-
Typ  
20.8  
18  
19.8  
49  
Max  
-
Unit  
dB  
Gp  
power gain  
RLin  
D  
input return loss  
drain efficiency  
adjacent channel power ratio  
9  
-
dB  
18  
-
%
ACPR  
43  
dBc  
7. Test information  
7.1 Ruggedness in class-AB operation  
The BLP8G10S-45P and BLP8G10S-45PG are capable of withstanding a load mismatch  
corresponding to VSWR = 10 : 1 through all phases under the following conditions:  
VDS = 28 V; IDq = 224 mA; PL = 25 W; f = 728 MHz.  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
3 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
7.2 Impedance information  
Table 8.  
Typical impedance  
Measured load-pull data. Typical values per section unless otherwise specified.  
[1]  
[1][2]  
f
ZS  
ZL  
(MHz)  
(Ω)  
(Ω)  
BLP8G10S-45P  
720  
11.6 j12.9  
14.8 j9.2  
15.3 j4.6  
13.3 j1.6  
6.5 j1.1  
5.2 j2.4  
4.4 j3.0  
3.8 j3.9  
3.6 j4.2  
3.6 j4.7  
5.44 + j6.34  
4.51 + j6.03  
4.23 + j6.15  
3.99 + j5.62  
3.87 + j5.37  
4.25 + j4.49  
3.69 + j4.89  
3.49 + j4.72  
3.06 + j4.46  
3.29 + j4.04  
746  
757  
791  
820  
869  
894  
925  
942  
960  
BLP8G10S-45PG  
720  
746  
757  
791  
869  
881  
894  
925  
942  
961  
13.2 j7.7  
11.8 j4.6  
10.4 j3.7  
9.8 j2.5  
5.0 j4.0  
4.6 j4.2  
4.2 j4.7  
3.8 j5.6  
3.7 j5.8  
3.6 j6.4  
4.34 + j5.10  
4.58 + j4.94  
4.50 + j5.34  
4.19 + j4.87  
4.27 + j3.42  
3.62 + j3.45  
3.77 + j3.29  
3.60 + j3.15  
3.29 + j2.89  
3.36 + j2.47  
[1] ZS and ZL defined in Figure 1.  
[2] ZL is selected for maximum efficiency.  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
4 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
7.3 Test circuit  
110 mm  
C31  
C13  
C12  
C11  
C34  
C33  
R11  
C32  
C36  
C14  
C35  
C45  
76 mm  
C24  
C46  
C42  
S1  
R21  
C22  
C23  
C43  
C44  
C21  
C41  
amp00797  
See Table 9 for a list of components.  
Fig 2. Component layout for class-AB production test circuit  
Table 9.  
List of components  
For test circuit see Figure 2.  
Component Description  
Value  
Remarks  
C11, C21, C32, C42 multilayer ceramic chip capacitor 10 F, 50 V  
C12, C22, C33, C43 multilayer ceramic chip capacitor 1 F, 50 V  
C13, C23, C34, C44 multilayer ceramic chip capacitor 43 pF  
C14, C24, C36, C46 multilayer ceramic chip capacitor 43 pF  
ATC100B  
ATC100A  
C31, C41  
C35, C45  
R11, R21  
S1  
electrolytic capacitor  
220 F, 63 V  
multilayer ceramic chip capacitor 3.3 pF  
ATC100B  
chip resistor  
socket  
10   
Multi Comp SMD 1206  
Johnstech  
-
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
5 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
7.4 Graphical data  
7.4.1 2-Carrier W-CDMA  
aaa-007627  
aaa-007628  
23  
22  
21  
20  
19  
18  
17  
70  
60  
50  
40  
30  
20  
G
η
D
(%)  
p
(2)  
(3)  
(1)  
(dB)  
(2)  
(3)  
(1)  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
P
(W)  
P
(W)  
L
L
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz;  
fc = 960 MHz  
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz;  
fc = 960 MHz  
(1) VDS = 24 V  
(2) VDS = 28 V  
(3) VDS = 32 V  
(1) VDS = 24 V  
(2) VDS = 28 V  
(3) VDS = 32 V  
Fig 3. Power gain as a function of output power per  
section; typical values  
Fig 4. Drain efficiency as a function of output power  
per section; typical values  
aaa-007629  
-10  
ACPRR  
5M  
(dBc)  
(3)  
(2)  
(1)  
-20  
-30  
-40  
-50  
0
5
10  
15  
20  
25  
30  
P
(W)  
L
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz  
(1) VDS = 24 V  
(2) VDS = 28 V  
(3) VDS = 32 V  
Fig 5. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
6 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
aaa-007630  
aaa-007631  
23  
22  
21  
20  
19  
18  
17  
70  
60  
50  
40  
30  
20  
G
η
D
(%)  
p
(dB)  
(1)  
(2)  
(3)  
(4)  
(1)  
(2)  
(3)  
(4)  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
P
(W)  
P
(W)  
L
L
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz;  
fc = 960 MHz  
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz;  
fc = 960 MHz  
(1) Tcase = 15 C  
(2) Tcase = 25 C  
(3) Tcase = 55 C  
(4) Tcase = 85 C  
(1) Tcase = 15 C  
(2) Tcase = 25 C  
(3) Tcase = 55 C  
(4) Tcase = 85 C  
Fig 6. Power gain as a function of output power per  
section; typical values  
Fig 7. Drain efficiency as a function of output power  
per section; typical values  
aaa-007632  
-10  
ACPPRR  
5M  
(dBc)  
-20  
(4)  
(3)  
(2)  
(1)  
-30  
-40  
-50  
0
5
10  
15  
20  
25  
30  
P
(W)  
L
VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz  
(1) Tcase = 15 C  
(2) Tcase = 25 C  
(3) Tcase = 55 C  
(4) Tcase = 85 C  
Fig 8. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
7 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
8. Package outline  
SOT1223-4  
(
18.01  
15.44  
8.85  
)
E
0.10 (4)  
A
(
)
(
2.15  
)
(
0.75  
)
3
4
0.05 A  
R1.38  
L
16.00  
P
2.00 0.1Z  
R0.16 max.  
2
1
0.10  
1.57 (5)  
0.22 0.05  
metal protrusion 4x  
(ground) in corners (2)  
0.25 B  
3.85 (3)  
L
B
20.57 (1)  
0.05 B  
+
-
0.08  
L
3.92  
0.03  
R1.00  
R0.32  
B
20.39  
(
0.20) compound rim all around  
the perimeter of the heatsink  
pin 5 (6)  
R0.60(4x)  
Min. 15.5  
Min. 18.5  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1223-4  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 1 of 2  
Fig 9. Package outline SOT1223-4 (sheet 1 of 2)  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
8 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
SOT1223-4  
Drawing Notes  
Description  
Items  
(1)  
Dimensions are excluding mold protrusion. All areas located adjacent to the leads have a maximum mold protrusion of 0.25  
mm (per side) and max. 0.62 mm in length.  
At all other areas the mold protrusion is maximum 0.15 mm per side. See also detail B.  
The metal protrusion (tie bars) might protrude the molding compound, max. protrusion 0.3 mm. (detail A).  
The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.  
The lead coplanarity over all leads is 0.1 mm maximum.  
(2)  
(3)  
(4)  
(5)  
(6)  
(7)  
Dimension is measured 0.5 mm from the edge of the top package body.  
The hatched area indicates the exposed metal heatsink.  
The leads and exposed heatsink are plated with matte Tin (Sn).  
location of metal protrusion (2)  
DETAIL A  
SCALE 25 : 1  
B
A
lead dambar  
location  
DETAIL B  
SCALE 50: 1  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1223-4  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 2 of 2  
Fig 10. Package outline SOT1223-4 (sheet 2 of 2)  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
9 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
SOT1224-4  
(
18.01  
15.44  
)
)
0.22 0.05  
(
(
2.15  
)
)
8.85  
(
0.75  
A
4
3
R1.38  
0.05 A  
L
16.00  
P
2.00 0.1Z  
C
metal protrusion 4x  
R0.16 max.  
(ground) in corners (2)  
2
1
0.25 B  
3.85 (3)  
L
DETAIL  
C
20.57 (1)  
0.05 B  
L
+
-
0.08  
0.03  
SCALE 25 : 1  
3.92  
R1.00  
H
R0.32  
B
20.39  
0.10  
(
0.20) compound rim all around  
the perimeter of the heatsink  
+
-
4°  
3°  
3.0°  
+
0.06  
0.02  
0.00  
(6)  
-
pin 5 (4)  
R0.60 (4x)  
Gage plane  
0.35 (7)  
Seating plane  
Min. 15.5  
Min. 18.5  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1224-4  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 1 of 2  
Fig 11. Package outline SOT1224-4 (sheet 1 of 2)  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
10 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
SOT1224-4  
Drawing Notes  
Description  
Items  
(1)  
Dimensions are excluding mold protrusion. All areas located adjacent to the leads have a maximum mold protrusion of 0.25  
mm (per side) and max. 0.62 mm in length. At all other areas the mold protrusion is maximum 0.15 mm per side. See also  
detail B.  
(2)  
(3)  
(4)  
(5)  
The metal protrusion (tie bars) might protrude the molding compound, max. protrusion 0.3 mm. (detail A).  
The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.  
The hatched area indicated the exposed heatsink.  
The leads and exposed heatsink are plated with matte Tin (Sn).  
Dimension is measured with respect to the bottom of the heatsink Datum H. Positive value means that the bottom of the  
heatsink is higher than the bottom of the lead.  
(6)  
(7)  
Gage plane (foot length) to be measured from the seating plan.  
location of metal protrusion (2)  
DETAIL  
A
SCALE 25 : 1  
B
A
lead dambar  
location  
DETAIL B  
SCALE 50 : 1  
1
Tolerances unless otherwise stated:  
Angle:  
Revision:  
Revision date:  
Package outline drawing:  
SOT1224-4  
7/26/2018  
B
1°  
Dimension:  
B
0.05  
units in mm.  
Third angle projection  
Sheet 2 of 2  
Fig 12. Package outline SOT1224-4 (sheet 2 of 2)  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
11 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
9. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
Table 10. ESD sensitivity  
ESD model  
Class  
C2A [1]  
1C [2]  
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002  
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001  
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.  
[2] HBM classification 1C is granted to any part that passes after exposure to an ESD pulse of 1000 V.  
10. Abbreviations  
Table 11. Abbreviations  
Acronym  
3GPP  
CCDF  
DPCH  
ESD  
Description  
3rd Generation Partnership Project  
Complementary Cumulative Distribution Function  
Dedicated Physical CHannel  
ElectroStatic Discharge  
GSM  
Global System for Mobile Communications  
Laterally Diffused Metal-Oxide Semiconductor  
Long Term Evolution  
LDMOS  
LTE  
PAR  
Peak-to-Average Ratio  
RoHS  
SMD  
Restriction of Hazardous Substances  
Surface Mounted Device  
VSWR  
W-CDMA  
Voltage Standing-Wave Ratio  
Wideband Code Division Multiple Access  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
12 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
11. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status Change notice Supersedes  
BLP8G10S-45P_8G10S-45PG 20181029  
v.4  
Product data sheet -  
BLP8G10S-45P_8G10S-45PG v.3  
Modifications:  
Table 2 on page 2: package outline versions changed to SOT1223-4 and SOT1224-4  
Table 3 on page 2: package outline versions changed to SOT1223-4 and SOT1224-4  
Figure 2 on page 5: figure updated  
Table 10 on page 12: table added  
Section 8 on page 8: package outline versions changed from SOT1223-2 and  
SOT1224-2 to SOT1223-4 and SOT1224-4  
BLP8G10S-45P_8G10S-45PG 20160108  
v.3  
Product data sheet -  
Product data sheet -  
Product data sheet -  
BLP8G10S-45P_8G10S-45PG v.2  
BLP8G10S-45P_8G10S-45PG 20150901  
v.2  
BLP8G10S-45P_8G10S-45PG v.1  
-
BLP8G10S-45P_8G10S-45PG 20130725  
v.1  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
13 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
12.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
14 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
12.4 Trademarks  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’s warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’s specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’s standard warranty and Ampleon’s product  
specifications.  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
13. Contact information  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
BLP8G10S-45P_8G10S-45PG  
All information provided in this document is subject to legal disclaimers.  
© Ampleon Netherlands B.V. 2018. All rights reserved.  
Product data sheet  
Rev. 4 — 29 October 2018  
15 of 16  
BLP8G10S-45P; BLP8G10S-45PG  
Power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation. . . . . . . . . . 3  
Impedance information . . . . . . . . . . . . . . . . . . . 4  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6  
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6  
7.1  
7.2  
7.3  
7.4  
7.4.1  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Handling information. . . . . . . . . . . . . . . . . . . . 12  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 15  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon Netherlands B.V. 2018.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 29 October 2018  
Document identifier: BLP8G10S-45P_8G10S-45PG  
配单直通车
BLPD133B产品参数
型号:BLPD133B
是否Rohs认证: 符合
生命周期:Active
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.40.20.00
风险等级:5.77
其他特性:HIGH RELIABILITY
颜色:WHITE
配置:SINGLE WITH BUILT-IN RESISTOR
透镜类型:WATER CLEAR
标称发光强度:380.0 mcd
功能数量:1
最高工作温度:70 °C
最低工作温度:-40 °C
光电设备类型:SINGLE COLOR LED
包装方法:BULK
形状:ROUND
视角:120 deg
Base Number Matches:1
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