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产品型号BLS6G2731-120,112的Datasheet PDF文件预览

BLS6G2731-120;  
BLS6G2731S-120  
LDMOS S-band radar power transistor  
Rev. 01 — 14 November 2008  
Product data sheet  
1. Product profile  
1.1 General description  
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz  
range.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB  
production test circuit.  
Mode of operation  
f
VDS  
(V)  
PL  
Gp  
ηD  
tr  
tf  
(GHz)  
(W)  
120  
(dB) (%)  
(ns)  
20  
(ns)  
6
pulsed RF  
2.7 to 3.1 32  
13.5 48  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage  
of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %:  
N Output power = 120 W  
N Power gain = 13.5 dB  
N Efficiency = 48 %  
I Easy power control  
I Integrated ESD protection  
I High flexibility with respect to pulse formats  
I Excellent ruggedness  
I High efficiency  
I Excellent thermal stability  
I Designed for broadband operation (2.7 GHz to 3.1 GHz)  
I Internally matched for ease of use  
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances  
(RoHS)  
 
 
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
1.3 Applications  
I S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency  
range  
2. Pinning information  
Table 2.  
Pin  
BLS6G2731-120 (SOT502A)  
Pinning  
Description  
Simplified outline  
Graphic symbol  
1
2
3
drain  
gate  
1
1
3
2
[1]  
source  
2
3
sym112  
BLS6G2731S-120 (SOT502B)  
1
2
3
drain  
gate  
1
1
3
2
[1]  
source  
2
3
sym112  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BLS6G2731-120  
flanged LDMOST ceramic package; 2 mounting holes; SOT502A  
2 leads  
BLS6G2731S-120 -  
earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGS  
ID  
Parameter  
Min  
Max  
60  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
-
0.5  
+13  
33  
V
-
A
Tstg  
Tj  
storage temperature  
junction temperature  
65  
+150  
225  
°C  
°C  
-
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
2 of 12  
 
 
 
 
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ Unit  
Zth(j-mb)  
transient thermal impedance from  
junction to mounting base  
Tcase = 85 °C; PL = 120 W  
tp = 100 µs; δ = 10 %  
tp = 200 µs; δ = 10 %  
tp = 300 µs; δ = 10 %  
tp = 100 µs; δ = 20 %  
0.23 K/W  
0.28 K/W  
0.32 K/W  
0.33 K/W  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ  
60  
1.4 1.8  
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA  
-
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 180 mA  
VGS = 0 V; VDS = 28 V  
VGS = VGS(th) + 3.75 V;  
2.4  
4.2  
-
V
-
-
µA  
A
IDSX  
drain cut-off current  
27 33  
V
DS = 10 V  
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 9 A  
-
-
450  
-
nA  
S
forward transconductance  
8.1 13  
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 6.3 A  
-
0.085 0.135 Ω  
7. Application information  
Table 7.  
Mode of operation: pulsed RF; tp = 100 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA;  
case = 25 °C; unless otherwise specified, in a class-AB production circuit.  
Application information  
T
Symbol  
Parameter  
Conditions Min Typ Max Unit  
PL  
output power  
-
-
120  
-
-
W
V
VCC  
Gp  
supply voltage  
PL = 120 W  
32  
-
power gain  
PL = 120 W 12  
13.5  
7
dB  
dB  
W
%
RLin  
PL(1dB)  
ηD  
input return loss  
output power at 1 dB gain compression  
drain efficiency  
PL = 120 W  
-
-
-
130  
48  
0
-
PL = 120 W 40  
-
Pdroop(pulse) pulse droop power  
PL = 120 W  
PL = 120 W  
PL = 120 W  
-
-
-
0.5  
50  
50  
dB  
ns  
ns  
tr  
tf  
rise time  
fall time  
20  
6
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
3 of 12  
 
 
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
Table 8.  
Typical impedance  
f
ZS  
ZL  
GHz  
2.7  
2.8  
2.9  
3.0  
3.1  
3.4 j7.2  
3.8 j5.9  
4.7 j4.8  
6.3 j4.1  
8.8 j4.9  
4.6 j4.4  
3.8 j4.6  
3.0 j4.6  
2.3 j4.3  
1.8 j3.9  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
7.1 Ruggedness in class-AB operation  
The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load  
mismatch corresponding to VSWR = 5 : 1 through all phases under the following  
conditions: VDS = 32 V; IDq = 100 mA; PL = 120 W; tp = 100 µs; δ = 10 %.  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
4 of 12  
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
7.2 Graphs  
001aaj091  
001aaj092  
15  
15  
G
G
p
p
(dB)  
(dB)  
13  
13  
(1)  
(3)  
(2)  
(1)  
(3)  
(2)  
11  
9
11  
9
7
7
0
40  
80  
120  
160  
0
40  
80  
120  
160  
P
(W)  
P (W)  
L
L
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.  
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.  
(1) f = 2.7 GHz  
(2) f = 2.9 GHz  
(3) f = 3.1 GHz  
(1) f = 2.7 GHz  
(2) f = 2.9 GHz  
(3) f = 3.1 GHz  
Fig 2. Power gain as a function of load power; typical  
values  
Fig 3. Power gain as a function of load power; typical  
values  
001aaj093  
001aaj094  
60  
60  
(1)  
(1)  
η
η
D
D
(%)  
(%)  
(2)  
(3)  
(2)  
(3)  
40  
40  
20  
20  
0
0
0
40  
80  
120  
160  
0
40  
80  
120  
160  
P
(W)  
P (W)  
L
L
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.  
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.  
(1) f = 2.7 GHz  
(2) f = 2.9 GHz  
(3) f = 3.1 GHz  
(1) f = 2.7 GHz  
(2) f = 2.9 GHz  
(3) f = 3.1 GHz  
Fig 4. Drain efficiency as a function of load power;  
typical values  
Fig 5. Drain efficiency as a function of load power;  
typical values  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
5 of 12  
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
001aaj095  
001aaj096  
160  
160  
P
P
L
L
(W)  
(W)  
120  
120  
80  
40  
0
80  
40  
0
(1)  
(3)  
(2)  
(1)  
(3)  
(2)  
0
4
8
12  
0
4
8
12  
P (W)  
i
P (W)  
i
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.  
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.  
(1) f = 2.7 GHz  
(2) f = 2.9 GHz  
(3) f = 3.1 GHz  
(1) f = 2.7 GHz  
(2) f = 2.9 GHz  
(3) f = 3.1 GHz  
Fig 6. Load power as a function of input power;  
typical values  
Fig 7. Load power as a function of input power;  
typical values  
001aaj097  
001aaj098  
15  
60  
15  
60  
G
η
G
η
D
p
D
p
(dB)  
(%)  
(dB)  
(%)  
G
p
G
p
13  
50  
13  
50  
η
D
η
D
11  
40  
11  
40  
9
2.65  
30  
3.15  
9
2.65  
30  
3.15  
2.75  
2.85  
2.95  
3.05  
2.75  
2.85  
2.95  
3.05  
f (GHz)  
f (GHz)  
PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 300 µs;  
δ = 10 %.  
PL = 120 W; VDS = 32 V; IDq = 100 mA; tp = 100 µs;  
δ = 20 %.  
Fig 8. Power gain and drain efficiency as function of  
frequency; typical values  
Fig 9. Power gain and drain efficiency as function of  
frequency; typical values  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
6 of 12  
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
8. Test information  
C3  
C13  
C8  
C7  
C9  
C11  
C5  
C6  
C12  
C10  
C4  
R1  
C1  
C2  
Rev3  
001aaj099  
Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm.  
See Table 9 for list of components.  
Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit  
Table 9.  
List of components  
See Figure 10.  
Component  
C1, C2  
Description  
Value  
Remarks  
multilayer ceramic chip capacitor 24 pF  
multilayer ceramic chip capacitor 47 µF; 20 V  
multilayer ceramic chip capacitor 33 pF  
multilayer ceramic chip capacitor 1 nF  
multilayer ceramic chip capacitor 100 pF  
ATC 100A or equivalent  
C3  
C4, C6, C9, C10  
C5, C11  
C7, C8  
ATC 100A or equivalent  
ATC 100A or equivalent  
ATC 100B or equivalent  
C12  
electrolytic capacitor  
47 µF; 63 V  
C13  
multilayer ceramic chip capacitor 10 µF; 35 V  
R1  
SMD resistor  
56 Ω  
SMD 0603  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
7 of 12  
 
 
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
9. Package outline  
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads  
SOT502A  
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT  
1
1
1
2
1
12.83  
12.57  
3.38  
3.12  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
34.16 9.91  
33.91 9.65  
0.15  
0.08  
27.94  
1.100  
0.25  
0.01  
0.51  
0.02  
mm  
0.505  
0.495  
0.133 0.067  
0.123 0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
1.345 0.390  
1.335 0.380  
0.006  
0.003  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
99-12-28  
03-01-10  
SOT502A  
Fig 11. Package outline SOT502A  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
8 of 12  
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
Earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT  
1
1
1
2
2
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
03-01-10  
07-05-09  
SOT502B  
Fig 12. Package outline SOT502B  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
9 of 12  
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
10. Abbreviations  
Table 10. Abbreviations  
Acronym  
Description  
LDMOS  
LDMOST  
RF  
Laterally Diffused Metal-Oxide Semiconductor  
Laterally Diffused Metal-Oxide Semiconductor Transistor  
Radio Frequency  
S-band  
VSWR  
Short wave Band  
Voltage Standing-Wave Ratio  
11. Revision history  
Table 11. Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BLS6G2731-120_6G2731S-120_1  
20081114  
Product data sheet  
-
-
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
10 of 12  
 
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
12.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLS6G2731-120_6G2731S-120_1  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 01 — 14 November 2008  
11 of 12  
 
 
 
 
 
 
BLS6G2731-120; BLS6G2731S-120  
NXP Semiconductors  
LDMOS S-band radar power transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
1.1  
1.2  
1.3  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
7.1  
7.2  
Application information. . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation. . . . . . . . . . 4  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 11  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 14 November 2008  
Document identifier: BLS6G2731-120_6G2731S-120_1  
 
配单直通车
BLS6G2731-120,112产品参数
型号:BLS6G2731-120,112
是否Rohs认证: 符合
生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.27
外壳连接:SOURCE
配置:SINGLE
最小漏源击穿电压:60 V
最大漏极电流 (ID):33 A
FET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:S BAND
JESD-30 代码:R-CDFM-F2
元件数量:1
端子数量:2
工作模式:ENHANCEMENT MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL
参考标准:IEC-60134
表面贴装:YES
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
Base Number Matches:1
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