BSZ096N10LS5ATMA1中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

BSZ097N04LSꢀG

MOSFET

S3O8

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

Features

•ꢀFastꢀswitchingꢀMOSFETꢀforꢀSMPS

•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters

•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC¹⁾ꢀꢀforꢀtargetꢀapplications

•ꢀN-channel;ꢀLogicꢀlevel

•ꢀExcellentꢀgateꢀchargeꢀxꢀR_DS(on)ꢀproductꢀ(FOM)

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀAvalancheꢀtested

•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

S 1

S 2

S 3

G 4

8 D

7 D

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

6 D

5 D

V_DS

40

V

R_DS(on),max

I_D

9.7

mΩ

A

47

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

BSZ097N04LS G

PG-TSDSON-8

097N04L

-

¹⁾J-STD20 and JESD22

Final Data Sheet

1

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet

2

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_A=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

-

47

30

40

25

12

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

V_GS=4.5ꢀV,ꢀT_C=25ꢀ°C

Continuous drain current¹⁾

I_D

A

V_GS=4.5ꢀV,ꢀT_C=100ꢀ°C

V_GS=10ꢀV,ꢀT_A=25ꢀ°C,ꢀR_thJA=60ꢀK/W²⁾

Pulsed drain current³⁾

I_D,pulse

I_AS

-

188

20

A

T_C=25ꢀ°C

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

-

A

T_C=25ꢀ°C

E_AS

V_GS

-

20

mJ

V

I_D=20ꢀA,ꢀR_GS=25ꢀΩ

-20

20

-

35

2.1

T_C=25ꢀ°C

Power dissipation

P_tot

W

T_A=25ꢀ°C,ꢀR_thJA=60ꢀK/W²⁾

IEC climatic category;

DIN IEC 68-1: 55/150/56

Operating and storage temperature

T_j,ꢀT_stg

-55

-

150

°C

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

-

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case

R_thJC

R_thJA

-

3.6

K/W

-

Device on PCB,

-

60

6 cm²cooling area²⁾

¹⁾Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature

at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual

environmental conditions.

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See Diagram 3 for more detailed information

⁴⁾See Diagram 13 for more detailed information

Final Data Sheet

3

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

40

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_GS(th)

-

V

V_GS=0ꢀV,ꢀI_D=1ꢀmA

V_DS=V_GS,ꢀI_D=14ꢀµA

1.2

2

-

0.1

10

1

100

V_DS=40ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=25ꢀ°C

V_DS=40ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=125ꢀ°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

I_DSS

µA

nA

I_GSS

-

10

100

V_GS=20ꢀV,ꢀV_DS=0ꢀV

-

11.4

8.1

14.2

9.7

V_GS=4.5ꢀV,ꢀI_D=20ꢀA

V_GS=10ꢀV,ꢀI_D=20ꢀA

R_DS(on)

mΩ

Gate resistance

R_G

g_fs

-

1

-

Ω

-

Transconductance

24

47

S

|V_DS|>2|I_D|R_DS(on)max,ꢀI_D=20ꢀA

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance¹⁾

Output capacitance¹⁾

C_iss

C_oss

C_rss

-

1400 1900 pF

V_GS=0ꢀV,ꢀV_DS=20ꢀV,ꢀf=1ꢀMHz

340

16

450

-

pF

Reverse transfer capacitance

V_DD=20ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=20ꢀA,

R_G=1.6ꢀΩ

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

-

3.5

2.4

16

-

ns

V_DD=20ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=20ꢀA,

R_G=1.6ꢀΩ

V_DD=20ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=20ꢀA,

R_G=1.6ꢀΩ

Turn-off delay time

Fall time

V_DD=20ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=20ꢀA,

R_G=1.6ꢀΩ

2.8

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics²⁾ꢀ

Values

Typ.

4.6

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q_gs

-

nC

V

V_DD=20ꢀV,ꢀI_D=20ꢀA,ꢀV_GS=0ꢀtoꢀ10ꢀV

V_DD=20ꢀV,ꢀI_D=20ꢀA,ꢀV_GS=0ꢀtoꢀ4.5ꢀV

V_DS=0.1ꢀV,ꢀV_GS=0ꢀtoꢀ10ꢀV

Q_g(th)

Q_gd

2.3

-

1.9

-

Q_sw

4.3

-

Gate charge total¹⁾

Q_g

18

24

Gate plateau voltage

Gate charge total¹⁾

V_plateau

Q_g

3.3

-

8.6

11.4

nC

Gate charge total, sync. FET

Output charge

Q_g(sync)

Q_oss

17

-

13

V_DD=20ꢀV,ꢀV_GS=0ꢀV

¹⁾Defined by design. Not subject to production test

²⁾See ″Gate charge waveforms″ for parameter definition

Final Data Sheet

4

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

-

Max.

29

Diode continuous forward current

Diode pulse current

I_S

-

A

T_C=25ꢀ°C

I_S,pulse

V_SD

Q_rr

-

188

1.2

-

A

T_C=25ꢀ°C

Diode forward voltage

0.85

15

V

V_GS=0ꢀV,ꢀI_F=20ꢀA,ꢀT_j=25ꢀ°C

V_R=20ꢀV,ꢀI_F=I_S,ꢀdi_F/dt=400ꢀA/µs

Reverse recovery charge

nC

Final Data Sheet

5

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀDrainꢀcurrent

40

50

40

30

20

10

0

30

20

10

0

40

80

120

160

0

40

80

120

160

T_Cꢀ[°C]

P_tot=f(T_C)

I_D=f(T_C);ꢀV_GS≥10ꢀV

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10¹

1 µs

10²

10¹

10⁰

10^-1

0.5

10 µs

100 µs

10⁰

0.2

1 ms

0.1

0.05

0.02

10 ms

10^-1

0.01

DC

single pulse

10^-2

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJC=f(t_p);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

6

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance

140

20

10 V

3.5 V

120

5 V

16

100

4.5 V

4 V

12

80

4.5 V

5 V

60

4 V

8

4

0

10 V

40

3.5 V

20

3.2 V

3 V

2.8 V

0

1

2

3

0

10

20

30

40

50

V_DSꢀ[V]

I_Dꢀ[A]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(I_D);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance

140

120

100

80

90

60

30

0

60

40

150 °C

20

25 °C

0

1

2

3

4

5

0

40

80

120

160

V_GSꢀ[V]

I_Dꢀ[A]

I_D=f(V_GS);ꢀ|V_DS|>2|I_D|R_DS(on)max;ꢀparameter:ꢀT_j

g_fs=f(I_D);ꢀT_j=25ꢀ°C

Final Data Sheet

7

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance

Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage

16

2.5

2.0

1.5

1.0

0.5

0.0

12

98 %

typ

8

4

0

-60

-20

20

60

100

140

180

-60

-20

20

60

100

140

180

T_jꢀ[°C]

R_DS(on)=f(T_j);ꢀI_D=20ꢀA;ꢀV_GS=10ꢀV

V_GS(th)=f(T_j);ꢀV_GS=V_DS;ꢀI_D=14ꢀµA

Diagramꢀ11:ꢀTyp.ꢀcapacitances

Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

10⁴

10³

25 °C

25 °C, max

150 °C

150 °C, max

Ciss

10³

10²

10¹

10⁰

10²

10¹

10⁰

Coss

Crss

0

10

20

30

40

0.0

0.5

1.0

1.5

2.0

V_DSꢀ[V]

V_SDꢀ[V]

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=1ꢀMHz

I_F=f(V_SD);ꢀparameter:ꢀT_j

Final Data Sheet

8

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

Diagramꢀ13:ꢀAvalancheꢀcharacteristics

Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge

10²

12

20 V

32 V

10

8

8 V

100 °C

10¹

6

25 °C

4

125 °C

2

10⁰

0

10⁰

10¹

10²

10³

0

4

8

12

16

20

t_AVꢀ[µs]

Q_gateꢀ[nC]

I_AS=f(t_AV);ꢀR_GS=25ꢀΩ;ꢀparameter:ꢀT_j(start)

V_GS=f(Q_gate);ꢀI_D=20ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage

Diagram Gate charge waveforms

45

40

35

30

25

20

-60

-20

20

60

100

140

180

T_jꢀ[°C]

V_BR(DSS)=f(T_j);ꢀI_D=1ꢀmA

Final Data Sheet

9

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

5ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8,ꢀdimensionsꢀinꢀmm/inches

Final Data Sheet

10

Rev.ꢀ2.1,ꢀꢀ2020-08-14

OptiMOSª3ꢀPower-Transistor,ꢀ40ꢀV

BSZ097N04LSꢀG

RevisionꢀHistory

BSZ097N04LS G

Revision:ꢀ2020-08-14,ꢀRev.ꢀ2.1

Previous Revision

Revision Date

Subjects (major changes since last revision)

Update current rating and footnotes

2.1

2020-08-14

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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

11

Rev.ꢀ2.1,ꢀꢀ2020-08-14

型号:	BSZ097N04LSG
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	GREEN, PLASTIC, TSDSON-8
针数：	8
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.65
Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：	20 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V
最大漏极电流 (Abs) (ID)：	40 A
最大漏极电流 (ID)：	12 A
最大漏源导通电阻：	0.0142 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-N5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	35 W
最大脉冲漏极电流 (IDM)：	160 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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