BSZ099N06LS5全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号BSZ099N06LS5的概述

芯片 BSZ099N06LS5 概述 BSZ099N06LS5是一种具有优异性能的N沟道金属氧化物半导体场效应晶体管（MOSFET），是当今市场上常见的功率器件之一。由于其在开关频率和效率方面的优越特性，广泛应用于电源管理和其他高功率设备。该器件的设计考虑了多种应用场景，确保其具有较低的导通电阻和高的击穿电压，从而适用于各种电气设备中需要高控制能力的场合。芯片的详细参数 BSZ099N06LS5的主要技术参数包括： - 类型：N沟道MOSFET - 最大耗散功率：90W - 最高工作温度：175°C - 最大漏极到源极电压（Vds）：60V - 最小栅极到源极电压（Vgs）：±20V - 导通电阻（Rds(on)）：约为9mΩ（在Vgs=10V时） - 单位增益截止频率（fT）：约为100MHz - 最大漏极电流（Id）：80A - 输入电容（Ciss）：约为1500pF - 输出电...

产品型号BSZ100N03LSG的Datasheet PDF文件预览

BSZ100N03LS G

OptiMOS™3 Power-MOSFET

Product Summary

Features

V _DS

• Fast switching MOSFET for SMPS

R _DS(on),max

I _D

mΩ

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

PG-TSDSON-8

• N-channel; Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSZ100N03LS G

PG-TSDSON-8

100N03L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

_GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

_GS=4.5 V, T _C=25 °C

_GS=4.5 V,

T _C=100 °C

_GS=10 V, T _A=25 °C,

_thJA=60 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

160

Avalanche current, single pulse⁴⁾

T _C=25 °C

E _AS

I _D=20 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=40 A, V _DS=24 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

Gate source voltage

¹⁾J-STD20 and JESD22

±20

Rev. 2.0

page 1

2010-03-19

BSZ100N03LS G

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

P _tot

T _C=25 °C

Power dissipation

T _A=25 °C,

2.1

_thJA=60 K/W²⁾

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

R _thJA

Thermal resistance, junction - case

Device on PCB

4.1

K/W

6 cm²cooling area²⁾

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSS

V _GS(th)

_GS=0 V, I _D=1 mA

Drain-source breakdown voltage

Gate threshold voltage

_DS=V _GS, I _D=250 µA

2.2

_DS=30 V, V _GS=0 V,

I _DSS

Zero gate voltage drain current

0.1

µA

T _j=25 °C

_DS=30 V, V _GS=0 V,

100

T _j=125 °C

I _GSS

_GS=20 V, V _DS=0 V

_GS=4.5 V, I _D=20 A

_GS=10 V, I _D=20 A

Gate-source leakage current

100 nA

R _DS(on)

Drain-source on-state resistance

mΩ

8.3

0.9

R _G

g _fs

Gate resistance

0.4

1.6

Ω

|V _DS|>2|I _D|R _DS(on)max

I _D=30 A

Transconductance

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See figure 3 for more detailed information

Rev. 2.0

page 2

2010-03-19

BSZ100N03LS G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

C _iss

Input capacitance

Output capacitance

1100

440

1500 pF

_GS=0 V, V _DS=15 V,

C _oss

C_rss

t _d(on)

t _r

590

f =1 MHz

Turn-on delay time

Rise time

2.9

2.6

_DD=15 V, V _GS=10 V,

I _D=30 A, R _G=1.6 Ω

t _d(off)

t _f

Turn-off delay time

Fall time

2.4

Gate Charge Characteristics⁵⁾

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q _gs

3.5

1.6

1.5

3.4

6.3

3.5

4.6

2.1

2.5

5.0

8.3

Q _g(th)

Q _gd

_DD=15 V, I _D=30 A,

_GS=0 to 4.5 V

Q _sw

Q _g

Gate charge total

V _plateau

Gate plateau voltage

_DD=15 V, I _D=30 A,

_GS=0 to 10 V

Q _g

Gate charge total

_DS=0.1 V,

Q _g(sync)

Q _oss

Gate charge total, sync. FET

Output charge

5.4

7.2

_GS=0 to 4.5 V

_DD=15 V, V _GS=0 V

Reverse Diode

I _S

Diode continuous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

160

_GS=0 V, I _F=20 A,

V _SD

Q _rr

Diode forward voltage

0.87

1.1

T _j=25 °C

V _R=15 V, I _F=I _S,

di _F/dt =400 A/µs

Reverse recovery charge

⁴⁾See figure 13 for more detailed information

⁵⁾See figure 16 for gate charge parameter definition

Rev. 2.0

page 3

2010-03-19

BSZ100N03LS G

1 Power dissipation

2 Drain current

_tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

120

160

120

160

_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

_thJC=f(t _p)

parameter: D =t _p/T

10³

limited by on-state

resistance

1 µs

0.5

10²

10 µs

0.2

0.1

100 µs

10¹

0.05

0.02

0.01

1 ms

10 ms

0.1

single pulse

10⁰

10^-1

0.01

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

_p[s]

10^-2

10^-1

10⁰

_DS[V]

Rev. 2.0

page 4

2010-03-19

BSZ100N03LS G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

_DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

160

10 V

3.5 V

5 V

4 V

120

4.5 V

5 V

10 V

11.5 V

4 V

3.5 V

3.2 V

3 V

2.8 V

_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

100

120

100

150 °C

25 °C

120

160

_GS[V]

_D[A]

Rev. 2.0

page 5

2010-03-19

BSZ100N03LS G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_DS(on)=f(T _j); I _D=20 A; V _GS=10 V

_GS(th)=f(T _j); V _GS=V _DS; I _D=250 µA

2.5

1.5

98 %

typ

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

1000

10³

10²

10¹

10⁰

Ciss

100

25 °C

150 °C, 98%

Coss

150 °C

Crss

25 °C, 98%

0.0

0.5

1.0

_SD[V]

1.5

2.0

_DS[V]

Rev. 2.0

page 6

2010-03-19

BSZ100N03LS G

13 Avalanche characteristics

_AS=f(t _AV); R _GS=25 Ω

14 Typ. gate charge

_GS=f(Q _gate); I _D=30 A pulsed

parameter: T _j(start)

parameter: V _DD

100

15 V

6 V

24 V

25 °C

125 °C

100 °C

100

1000

_AV[µs]

_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

_BR(DSS)=f(T _j); I _D=1 mA

V _GS

Q _g

V _gs(th)

Q _g(th)

Q _sw

Q _gd

Q _gate

Q _gs

-60

-20

100

140

180

T _j[°C]

Rev. 2.0

page 7

2010-03-19

BSZ100N03LS G

Package Outline

PG-TSDSON-8

Rev. 2.0

page 8

2010-03-19

BSZ100N03LS G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.0

page 9

2010-03-19

BSZ099N06LS5相关文章

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BSZ100N03LSG产品参数

型号:	BSZ100N03LSG
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	INFINEON TECHNOLOGIES AG
包装说明：	GREEN, PLASTIC, TSDSON-8
针数：	8
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.66
其他特性：	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：	15 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	40 A
最大漏极电流 (ID)：	12 A
最大漏源导通电阻：	0.015 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-N5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	225
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	30 W
最大脉冲漏极电流 (IDM)：	160 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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