Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH105
Normalised Power Dissipation, PD (%)
120
Peak Pulsed Drain Current, IDM (A)
D = 0.5
BSH105
1000
100
10
100
80
60
40
20
0
0.2
0.1
0.05
0.02
P
D = tp/T
D
tp
single pulse
1
T
0.1
0
25
50
75
100
125
150
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Ambient Temperature, Ta (C)
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Ta)
Fig.4. Transient thermal impedance.
Zth j-a = f(t); parameter D = tp/T
Drain Current, ID (A)
Tj = 25 C
BSH105
Normalised Drain Current, ID (%)
5
4.5
4
120
100
80
60
40
20
0
4.5V
2.5V
2.1 V
3.5
3
VGS = 1.9 V
2.5
2
1.7 V
1.5 V
1.5
1
1.3 V
1.1 V
0.5
0
0
25
50
75
100
125
150
0
0.5
1
1.5
2
Ambient Temperature, Ta (C)
Drain-Source Voltage, VDS (V)
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
BSH105
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
0.45
0.4
BSH105
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
2.1 V
1.5 V
1.7 V
1.9 V
100
10
0.35
0.3
tp = 100 us
1 ms
2.5 V
VGS = 4.5 V
0.25
0.2
1
10 ms
0.15
0.1
100 ms
0.1
0.01
d.c.
0.05
0
Tj = 25 C
0.5
0.1
1
10
100
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Drain Current, ID (A)
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. Ta = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
August 1998
3
Rev 1.000