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BSH103TR

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产品型号BSH104的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BSH104

N-channel enhancement mode

MOS transistor

1997 Nov 26

Objective speciﬁcation

File under Discrete Semiconductors, SC13b

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode

MOS transistor

BSH104

FEATURES

PINNING

• High-speed switching

SYMBOL

DESCRIPTION

• No secondary breakdown

• Direct interface to C-MOS, TTL, etc.

• Very low threshold.

gate

source

drain

APPLICATIONS

• ‘Glue-logic’: interface between logic blocks and/or

periphery

• Power management

handbook, halfpage

• DC to DC converters

• General purpose switch

• Battery powered applications.

DESCRIPTION

N-channel enhancement mode MOS transistor in a SOT23

SMD package.

Top view

MAM273

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline (SOT23) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

drain-source voltage (DC)

source-drain diode forward voltage

gate-source voltage (DC)

gate-source threshold voltage

drain current (DC)

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_SD

V_GS

V_GSth

I_D

−

Ω

V_GD= 0; I_S= 0.5 A

±8

−

V_DS= V_GS; I_D= 1 mA

T_s= 80 °C

0.4

−

1.1

0.3

0.5

R_DSon

P_tot

drain-source on-state resistance

total power dissipation

V_GS= 2.5 V; I_D= 0.65 A

T_s= 80 °C

−

1997 Nov 26

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode

MOS transistor

BSH104

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

drain-source voltage (DC)

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_GS

I_D

−

gate-source voltage (DC)

drain current (DC)

±8

T_s= 80 °C; note 1

note 2

1.1

I_DM

P_tot

peak drain current

4.5

total power dissipation

T_s= 80 °C

0.5

°C

_amb= 25 °C; note 3

_amb= 25 °C; note 4

0.75

0.54

+150

T_stg

T_j

storage temperature

−55

operating junction temperature

Source-drain diode

I_S

source current (DC)

peak pulsed source current

T_s= 80 °C

−

0.5

I_SM

note 2

Notes

1. T_sis the temperature at the soldering point of the drain lead.

2. Pulse width and duty cycle limited by maximum junction temperature.

3. Device mounted on a printed-circuit board with a R_{th a-tp}(ambient to tie-point) of 27.5 K/W.

4. Device mounted on a printed-circuit board with a R_{th a-tp}(ambient to tie-point) of 90 K/W.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

140

UNIT

R_{th j-s}

thermal resistance from junction to soldering point

K/W

1997 Nov 26

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode

MOS transistor

BSH104

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

V_GS= 0; I_D= 10 µA

MIN. TYP. MAX. UNIT

V_(BR)DSSdrain-source breakdown voltage

0.4

−

V_GSth

I_DSS

gate-source threshold voltage

drain-source leakage current

gate leakage current

V_GS= V_DS; I_D= 1 mA

V_GS= 0; V_DS= 9.6 V

V_DS= 0; V_GS= ±8 V

V_GS= 4.5 V; I_D= 0.65 A

−

100

I_GSS

−

±100 nA

R_DSon

drain-source on-state resistance

−

0.23

0.3

0.4

−

Ω

_GS= 2.5 V; I_D= 0.65 A

−

Ω

V_GS= 1.8 V; I_D= 0.32 A

−

Ω

C_iss

C_oss

C_rss

Q_G

input capacitance

V_GS= 0; V_DS= 9.6 V; f = 1 MHz

−

t.b.f.

output capacitance

reverse transfer capacitance

total gate charge

−

V_GS= 6 V; V_DD= 6 V; I_D= 0.65 A;

−

T_amb= 25 °C

Q_GS

Q_GD

gate-source charge

gate-drain charge

V_DD= 6 V; I_D= 0.65 A;

T_amb= 25 °C

−

t.b.f.

−

V_DD= 6 V; I_D= 0.65 A;

T_amb= 25 °C

Switching times

t_d(on)turn-on delay time

V_GS= 0 to 6 V; V_DD= 6 V;

I_D= 0.65 A; R_gen= 6 Ω

−

t.b.f.

−

t_f

fall time

V_GS= 0 to 6 V; V_DD= 6 V;

I_D= 0.65 A; R_gen= 6 Ω

t_on

turn-on switching time

turn-off delay time

rise time

V_GS= 0 to 6 V; V_DD= 6 V;

I_D= 0.65 A; R_gen= 6 Ω

t_d(off)

t_r

V_GS= 6 to 0 V; V_DD= 6 V;

I_D= 0.65 A; R_gen= 6 Ω

V_GS= 6 to 0 V; V_DD= 6 V;

I_D= 0.65 A; R_gen= 6 Ω

t_off

turn-off switching time

V_GS= 6 to 0 V; V_DD= 6 V;

I_D= 0.65 A; R_gen= 6 Ω

Source-drain diode

V_SD

t_rr

source-drain diode forward voltage

reverse recovery time

V_GD= 0; I_S= 0.5 A

−

I_S= 0.5 A; di/dt = −100 A/µs

t.b.f.

−

1997 Nov 26

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode

MOS transistor

BSH104

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

1997 Nov 26

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode

MOS transistor

BSH104

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1997 Nov 26

Philips Semiconductors

Objective speciﬁcation

N-channel enhancement mode MOS

transistor

BSH104

NOTES

1997 Nov 26

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Belgium: see The Netherlands

Brazil: see South America

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Colombia: see South America

Czech Republic: see Austria

Slovakia: see Austria

Slovenia: see Italy

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

Tel. +27 11 470 5911, Fax. +27 11 470 5494

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 3 301 6312, Fax. +34 3 301 4107

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 632 2000, Fax. +46 8 632 2745

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2686, Fax. +41 1 481 7730

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Uruguay: see South America

Vietnam: see Singapore

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p,

P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA56

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

137107/00/01/pp8

Date of release: 1997 Nov 26

Document order number: 9397 750 02938

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北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

BSH104产品参数

型号:	BSH104
生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.76
其他特性：	LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	12 V
最大漏极电流 (ID)：	1.1 A
最大漏源导通电阻：	0.3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.5 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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