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产品型号BSP19,115的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
dbook, halfpage  
BSP19; BSP20  
NPN high-voltage transistors  
Product data sheet  
1999 Jun 01  
Supersedes data of 1997 Mar 03  
NXP Semiconductors  
Product data sheet  
NPN high-voltage transistors  
BSP19; BSP20  
FEATURES  
PINNING  
Low current (max. 100 mA)  
High voltage (max. 350 V).  
PIN  
1
DESCRIPTION  
base  
2, 4  
3
collector  
emitter  
APPLICATIONS  
Switching and amplification  
Especially used in telephony and automotive  
applications.  
4
handbook, halfpage  
2, 4  
DESCRIPTION  
1
NPN transistor in a SOT223 plastic package.  
PNP complement: BSP16.  
3
1
2
3
Top view  
MAM287  
Fig.1 Simplified outline (SOT223) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
BSP19  
400  
V
V
BSP20  
300  
VCEO  
collector-emitter voltage  
BSP19  
open base  
350  
250  
5
V
V
V
BSP20  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
base current (DC)  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
Tamb 25 °C; note 1  
100  
100  
1.2  
mA  
mA  
W
IB  
Ptot  
Tstg  
Tj  
65  
+150  
150  
+150  
°C  
°C  
°C  
Tamb  
65  
Note  
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.  
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated  
Handbook”.  
1999 Jun 01  
2
NXP Semiconductors  
Product data sheet  
NPN high-voltage transistors  
BSP19; BSP20  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
104  
UNIT  
K/W  
K/W  
thermal resistance from junction to ambient  
thermal resistance from junction to soldering point  
Rth j-s  
23  
Note  
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.  
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated  
Handbook”.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
collector cut-off current  
emitter cut-off current  
DC current gain  
CONDITIONS  
IE = 0; VCE = 300 V  
MIN.  
MAX.  
20  
UNIT  
nA  
IEBO  
hFE  
VCEsat  
Cc  
IC = 0; VEB = 5 V  
100  
nA  
VCE = 10 V; IC = 20 mA  
40  
collector-emitter saturation voltage IC = 50 mA; IB = 4 mA  
0.5  
2.5  
V
collector capacitance  
transition frequency  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
pF  
fT  
VCE = 10 V; IC = 10 mA; f = 100 MHz 70  
MHz  
1999 Jun 01  
3
NXP Semiconductors  
Product data sheet  
NPN high-voltage transistors  
BSP19; BSP20  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
99-09-13  
SOT223  
SC-73  
1999 Jun 01  
4
NXP Semiconductors  
Product data sheet  
NPN high-voltage transistors  
BSP19; BSP20  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
1999 Jun 01  
5
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/03/pp6  
Date of release: 1999 Jun 01  
Document order number: 9397 750 05773  
配单直通车
BSP19,115产品参数
型号:BSP19,115
Brand Name:NXP Semiconductor
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SC-73
包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4
制造商包装代码:SOT223
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.29.00.75
风险等级:7.18
外壳连接:COLLECTOR
最大集电极电流 (IC):1 A
基于收集器的最大容量:2.5 pF
集电极-发射极最大电压:350 V
配置:SINGLE
最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:4
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子面层:Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHz
VCEsat-Max:0.5 V
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