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    • 北京元坤伟业科技有限公司

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    • BT136X-800F
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    产品型号BT136X-800F的Datasheet PDF文件预览

    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    GENERAL DESCRIPTION  
    QUICK REFERENCE DATA  
    Glass passivated triacs in a full pack  
    plastic envelope, intended for use in  
    SYMBOL PARAMETER  
    MAX. MAX. MAX. UNIT  
    applications  
    requiring  
    high  
    BT136X-  
    500  
    600  
    800  
    bidirectional transient and blocking  
    voltage capability and high thermal  
    BT136X- 500F 600F 800F  
    BT136X- 500G 600G 800G  
    cycling  
    performance.  
    Typical  
    VDRM  
    Repetitive peak off-state  
    voltages  
    500  
    600  
    800  
    V
    applications include motor control,  
    industrial and domestic lighting,  
    heating and static switching.  
    IT(RMS)  
    ITSM  
    RMS on-state current  
    Non-repetitive peak on-state  
    current  
    4
    25  
    4
    25  
    4
    25  
    A
    A
    PINNING - SOT186A  
    PIN CONFIGURATION  
    SYMBOL  
    PIN  
    1
    DESCRIPTION  
    main terminal 1  
    case  
    T2  
    T1  
    2
    main terminal 2  
    gate  
    3
    G
    1
    2 3  
    case isolated  
    LIMITING VALUES  
    Limiting values in accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    V
    -500  
    -600  
    -800  
    800  
    VDRM  
    Repetitive peak off-state  
    voltages  
    -
    -
    5001  
    6001  
    IT(RMS)  
    ITSM  
    RMS on-state current  
    Non-repetitive peak  
    on-state current  
    full sine wave; Ths ≤ 92 ˚C  
    full sine wave; Tj = 25 ˚C prior to  
    surge  
    4
    A
    t = 20 ms  
    -
    -
    -
    25  
    27  
    3.1  
    A
    A
    t = 16.7 ms  
    I2t  
    dIT/dt  
    I2t for fusing  
    Repetitive rate of rise of  
    on-state current after  
    triggering  
    t = 10 ms  
    A2s  
    ITM = 6 A; IG = 0.2 A;  
    dIG/dt = 0.2 A/µs  
    T2+ G+  
    -
    50  
    50  
    50  
    10  
    2
    5
    5
    0.5  
    150  
    125  
    A/µs  
    A/µs  
    A/µs  
    A/µs  
    A
    T2+ G-  
    -
    T2- G-  
    -
    T2- G+  
    -
    IGM  
    Peak gate current  
    Peak gate voltage  
    Peak gate power  
    Average gate power  
    Storage temperature  
    Operating junction  
    temperature  
    -
    VGM  
    PGM  
    PG(AV)  
    Tstg  
    Tj  
    -
    V
    -
    -
    W
    over any 20 ms period  
    W
    -40  
    -
    ˚C  
    ˚C  
    1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
    switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
    October 1997  
    1
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    ISOLATION LIMITING VALUE & CHARACTERISTIC  
    Ths = 25 ˚C unless otherwise specified  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    Visol  
    Cisol  
    R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal  
    -
    2500  
    V
    three terminals to external  
    heatsink  
    waveform;  
    R.H. ≤ 65% ; clean and dustfree  
    Capacitance from T2 to external f = 1 MHz  
    heatsink  
    -
    10  
    -
    pF  
    THERMAL RESISTANCES  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    Rth j-hs  
    Rth j-a  
    Thermal resistance  
    junction to heatsink  
    full or half cycle  
    with heatsink compound  
    without heatsink compound  
    in free air  
    -
    -
    -
    -
    -
    55  
    5.5  
    7.2  
    -
    K/W  
    K/W  
    K/W  
    Thermal resistance  
    junction to ambient  
    STATIC CHARACTERISTICS  
    Tj = 25 ˚C unless otherwise stated  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP.  
    MAX.  
    ...F  
    UNIT  
    BT136X-  
    VD = 12 V; IT = 0.1 A  
    T2+ G+  
    ...  
    ...G  
    IGT  
    Gate trigger current  
    Latching current  
    Holding current  
    -
    -
    -
    -
    5
    8
    11  
    30  
    35  
    35  
    35  
    70  
    25  
    25  
    25  
    70  
    50  
    50  
    mA  
    mA  
    mA  
    mA  
    T2+ G-  
    T2- G-  
    50  
    T2- G+  
    100  
    IL  
    VD = 12 V; IGT = 0.1 A  
    T2+ G+  
    -
    -
    -
    -
    -
    7
    16  
    5
    20  
    30  
    20  
    30  
    15  
    20  
    30  
    20  
    30  
    15  
    30  
    45  
    30  
    45  
    30  
    mA  
    mA  
    mA  
    mA  
    mA  
    T2+ G-  
    T2- G-  
    T2- G+  
    7
    IH  
    VD = 12 V; IGT = 0.1 A  
    5
    VT  
    On-state voltage  
    IT = 5 A  
    -
    -
    1.4  
    0.7  
    0.4  
    1.70  
    1.5  
    -
    V
    V
    V
    VGT  
    Gate trigger voltage  
    VD = 12 V; IT = 0.1 A  
    VD = 400 V; IT = 0.1 A;  
    Tj = 125 ˚C  
    0.25  
    ID  
    Off-state leakage current VD = VDRM(max)  
    ;
    -
    0.1  
    0.5  
    mA  
    Tj = 125 ˚C  
    October 1997  
    2
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    DYNAMIC CHARACTERISTICS  
    Tj = 25 ˚C unless otherwise stated  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN.  
    TYP. MAX. UNIT  
    BT136X-  
    VDM = 67% VDRM(max)  
    ...  
    ...F  
    ...G  
    dVD/dt  
    dVcom/dt  
    tgt  
    Critical rate of rise of  
    off-state voltage  
    ;
    100  
    50  
    200  
    250  
    50  
    2
    -
    -
    -
    V/µs  
    V/µs  
    µs  
    Tj = 125 ˚C; exponential  
    waveform; gate open  
    circuit  
    Critical rate of change of  
    commutating voltage  
    VDM = 400 V; Tj = 95 ˚C;  
    IT(RMS) = 4 A;  
    -
    -
    -
    -
    10  
    -
    dIcom/dt = 1.8 A/ms; gate  
    open circuit  
    Gate controlled turn-on  
    time  
    ITM = 6 A; VD = VDRM(max);  
    IG = 0.1 A; dIG/dt = 5 A/µs  
    October 1997  
    3
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    IT(RMS) / A  
    Ptot / W  
    8
    Ths(max) / C  
    5
    4
    3
    2
    1
    0
    81  
    86.5  
    92  
    7
    92 C  
    = 180  
    120  
    1
    6
    97.5  
    5
    4
    3
    2
    1
    0
    90  
    60  
    103  
    30  
    108.5  
    114  
    119.5  
    125  
    0
    1
    2
    3
    4
    5
    -50  
    0
    50  
    100  
    150  
    IT(RMS) / A  
    Ths / C  
    Fig.1. Maximum on-state dissipation, Ptot, versus rms  
    on-state current, IT(RMS), where α = conduction angle.  
    Fig.4. Maximum permissible rms current IT(RMS)  
    versus heatsink temperature Ths.  
    ,
    IT(RMS) / A  
    ITSM / A  
    12  
    10  
    8
    1000  
    100  
    10  
    I
    TSM  
    time  
    I
    T
    T
    Tj initial = 25 C max  
    6
    dIT/dt limit  
    4
    T2- G+ quadrant  
    2
    0
    10us  
    100us  
    1ms  
    T / s  
    10ms  
    100ms  
    0.01  
    0.1  
    1
    10  
    surge duration / s  
    Fig.2. Maximum permissible non-repetitive peak  
    on-state current ITSM, versus pulse width tp, for  
    sinusoidal currents, tp ≤ 20ms.  
    Fig.5. Maximum permissible repetitive rms on-state  
    current IT(RMS), versus surge duration, for sinusoidal  
    currents, f = 50 Hz; Ths ≤ 92˚C.  
    VGT(Tj)  
    VGT(25 C)  
    ITSM / A  
    30  
    25  
    20  
    15  
    10  
    5
    1.6  
    1.4  
    1.2  
    1
    I
    TSM  
    time  
    I
    T
    T
    Tj initial = 25 C max  
    0.8  
    0.6  
    0.4  
    0
    1
    10  
    100  
    1000  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Number of cycles at 50Hz  
    Fig.3. Maximum permissible non-repetitive peak  
    on-state current ITSM, versus number of cycles, for  
    sinusoidal currents, f = 50 Hz.  
    Fig.6. Normalised gate trigger voltage  
    VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
    October 1997  
    4
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    IGT(Tj)  
    IGT(25 C)  
    IT / A  
    12  
    10  
    8
    Tj = 125 C  
    Tj = 25 C  
    3
    T2+ G+  
    T2+ G-  
    T2- G-  
    T2- G+  
    typ  
    max  
    2.5  
    2
    Vo = 1.27 V  
    Rs = 0.091 ohms  
    6
    1.5  
    1
    4
    2
    0.5  
    0
    0
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    0
    0.5  
    1
    1.5  
    VT / V  
    2
    2.5  
    3
    Fig.7. Normalised gate trigger current  
    IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
    Fig.10. Typical and maximum on-state characteristic.  
    IL(Tj)  
    IL(25 C)  
    Zth j-hs (K/W)  
    10  
    1
    with heatsink compound  
    3
    2.5  
    2
    without heatsink compound  
    unidirectional  
    bidirectional  
    1.5  
    1
    t
    P
    D
    0.1  
    0.01  
    p
    t
    0.5  
    0
    10us  
    0.1ms  
    1ms  
    10ms  
    tp / s  
    0.1s  
    1s  
    10s  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
    versus junction temperature Tj.  
    Fig.11. Transient thermal impedance Zth j-hs, versus  
    pulse width tp.  
    dVcom/dt (V/us)  
    1000  
    IH(Tj)  
    IH(25C)  
    3
    2.5  
    2
    off-state dV/dt limit  
    BT136...G SERIES  
    BT136 SERIES  
    100  
    BT136...F SERIES  
    1.5  
    1
    10  
    0.5  
    0
    dIcom/dt = 5.1 3.9  
    A/ms  
    3
    2.3 1.8 1.4  
    100  
    1
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    0
    50  
    150  
    Tj / C  
    Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
    versus junction temperature Tj.  
    Fig.12. Typical commutation dV/dt versus junction  
    temperature, parameter commutation dIT/dt. The triac  
    should commutate when the dV/dt is below the value  
    on the appropriate curve for pre-commutation dIT/dt.  
    October 1997  
    5
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    MECHANICAL DATA  
    Dimensions in mm  
    Net Mass: 2 g  
    10.3  
    max  
    4.6  
    max  
    3.2  
    3.0  
    2.9 max  
    2.8  
    Recesses (2x)  
    6.4  
    2.5  
    0.8 max. depth  
    15.8  
    max  
    seating  
    plane  
    15.8  
    max.  
    19  
    max.  
    3 max.  
    not tinned  
    3
    2.5  
    13.5  
    min.  
    1
    2
    3
    M
    0.4  
    1.0 (2x)  
    0.6  
    2.5  
    0.9  
    0.7  
    2.54  
    0.5  
    5.08  
    1.3  
    Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.  
    Notes  
    1. Refer to mounting instructions for F-pack envelopes.  
    2. Epoxy meets UL94 V0 at 1/8".  
    October 1997  
    6
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    BT136X series  
    DEFINITIONS  
    Data sheet status  
    Objective specification  
    This data sheet contains target or goal specifications for product development.  
    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
    Product specification  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
    or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
    operation of the device at these or at any other conditions above those given in the Characteristics sections of  
    this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    Philips Electronics N.V. 1997  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
    copyright owner.  
    The information presented in this document does not form part of any quotation or contract, it is believed to be  
    accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
    consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
    industrial or intellectual property rights.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices or systems where malfunction of these  
    products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
    for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
    from such improper use or sale.  
    October 1997  
    7
    Rev 1.200  
    配单直通车
    BT136X-800F产品参数
    型号:BT136X-800F
    生命周期：Obsolete
    IHS 制造商：NXP SEMICONDUCTORS
    零件包装代码：TO-220AB
    包装说明：FLANGE MOUNT, R-PSFM-T3
    针数：3
    Reach Compliance Code：unknown
    HTS代码：8541.30.00.80
    风险等级：5.19
    Is Samacsys：N
    外壳连接：ISOLATED
    配置：SINGLE
    关态电压最小值的临界上升速率：50 V/us
    最大直流栅极触发电流：25 mA
    最大直流栅极触发电压：1.5 V
    最大维持电流：15 mA
    JEDEC-95代码：TO-220AB
    JESD-30 代码：R-PSFM-T3
    元件数量：1
    端子数量：3
    最高工作温度：125 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    认证状态：Not Qualified
    最大均方根通态电流：4 A
    重复峰值关态漏电流最大值：500 µA
    断态重复峰值电压：800 V
    表面贴装：NO
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
    触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
    Base Number Matches：1
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