BT137F-800原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

Philips Semiconductors

Product specification

Triacs

BT137F series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a full pack

plastic envelope, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

applications

requiring

high

BT137F-

500

600

800

bidirectional transient and blocking

voltage capability and high thermal

BT137F- 500F 600F 800F

BT137F- 500G 600G 800G

cycling

performance.

Typical

V_DRM

Repetitive peak off-state

voltages

500

600

800

V

applications include motor control,

industrial and domestic lighting,

heating and static switching.

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

8

55

8

55

8

55

A

PINNING - SOT186

PIN CONFIGURATION

SYMBOL

1

DESCRIPTION

main terminal 1

case

T2

T1

2

main terminal 2

gate

3

G

1

2 3

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

-

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_hs≤ 73 ˚C

full sine wave; T_j= 125 ˚C prior

to surge; with reapplied V_DRM(max)

t = 20 ms

t = 16.7 ms

t = 10 ms

I_TM= 12 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

8

A

-

55

60

15

A

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

-

50

10

2

5

0.5

150

125

A/µs

A

T2+ G-

-

T2- G-

-

T2- G+

-

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

-

V_GM

P_GM

P_G(AV)

T_stg

T_j

-

V

-

W

over any 20 ms period

W

-40

-

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

February 1996

1

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT137F series

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree

-

1500

V

three terminals to external

heatsink

Capacitance from T2 to external f = 1 MHz

heatsink

-

12

-

pF

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Thermal resistance

junction to heatsink

full or half cycle

with heatsink compound

without heatsink compound

in free air

-

55

4.5

6.5

-

K/W

Thermal resistance

junction to ambient

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP.

MAX.

...F

UNIT

BT137F-

V_D= 12 V; I_T= 0.1 A

T2+ G+

...

...G

I_GT

Gate trigger current

Latching current

Holding current

-

5

8

11

30

35

70

25

70

50

mA

T2+ G-

T2- G-

50

T2- G+

100

I_L

V_D= 12 V; I_GT= 0.1 A

T2+ G+

-

7

16

5

30

45

30

45

20

30

45

30

45

20

45

60

45

60

40

mA

T2+ G-

T2- G-

T2- G+

7

I_H

V_D= 12 V; I_GT= 0.1 A

5

V_T

On-state voltage

I_T= 10 A

-

1.3

0.7

0.4

1.65

1.5

-

V

V_GT

Gate trigger voltage

V_D= 12 V; I_T= 0.1 A

V_D= 400 V; I_T= 0.1 A;

T_j= 125 ˚C

0.25

I_D

Off-state leakage current V_D= V_DRM(max)

;

-

0.1

0.5

mA

T_j= 125 ˚C

February 1996

2

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT137F series

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

BT137F-

V_DM= 67% V_DRM(max)

...

...F

...G

dV_D/dt

dV_com/dt

t_gt

Critical rate of change of

off-state voltage

;

100

50

200

250

20

2

-

V/µs

µs

T_j= 125 ˚C; exponential

waveform; gate open

circuit

Critical rate of change of

commutating voltage

V_DM= 400 V; T_j= 95 ˚C;

I_T(RMS)= 8 A;

-

10

-

dI_com/dt = 3.6 A/ms; gate

open circuit

Gate controlled turn-on

time

I_TM= 12 A; V_D= V_DRM(max);

I_G= 0.1 A; dI_G/dt = 5 A/µs

February 1996

3

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT137F series

BT137

IT(RMS) / A

BT137X

Ths(max) / C

= 180

Ptot / W

12

10

8

71

80

89

98

120

90

73 C

10

1

8

6

4

2

0

60

30

6

4

107

2

116

125

0

-50

0

50

Ths / C

100

150

0

2

4

6

8

10

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P_tot, versus rms

on-state current, I_T(RMS), where α = conduction angle.

Fig.4. Maximum permissible rms current I_T(RMS)

versus heatsink temperature T_hs.

,

BT137

ITSM / A

IT(RMS) / A

1000

100

10

25

20

15

10

5

I

TSM

time

I

T

Tj initial = 125 C max

dI_T/dt limit

T2- G+ quadrant

0

10us

100us

1ms

T / s

10ms

100ms

0.01

0.1

1

10

surge duration / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 20ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_hs≤ 73˚C.

VGT(Tj)

VGT(25 C)

ITSM / A

BT137

60

50

40

30

20

10

0

BT136

1.6

1.4

1.2

1

I

TSM

time

I

T

Tj initial = 125 C max

0.8

0.6

0.4

1

10

100

1000

-50

0

50

Tj / C

100

150

Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

February 1996

4

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT137F series

IGT(Tj)

IGT(25 C)

BT137

typ

IT / A

25

20

15

10

5

BT137

Tj = 125 C

Tj = 25 C

3

T2+ G+

T2+ G-

T2- G-

T2- G+

max

2.5

2

Vo = 1.264 V

Rs = 0.0378 Ohms

1.5

1

0.5

0

0.5

1

1.5

VT / V

2

2.5

3

-50

0

50

100

150

Tj / C

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

BT137

Zth j-hs (K/W)

10

1

TRIAC

with heatsink compound

3

2.5

2

without heatsink compound

unidirectional

bidirectional

1.5

1

t

P

D

0.1

0.01

p

t

0.5

0

10us

0.1ms

1ms

10ms

tp / s

0.1s

1s

10s

-50

0

50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

versus junction temperature T_j.

Fig.11. Transient thermal impedance Z_{th j-hs}, versus

pulse width t_p.

dV/dt (V/us)

1000

IH(Tj)

IH(25C)

TRIAC

3

2.5

2

off-state dV/dt limit

BT137...G SERIES

BT137 SERIES

100

BT137...F SERIES

1.5

1

dIcom/dt =

10 A/ms

7.9

6.1 4.7 3.6 2.8

10

0.5

0

1

-50

0

50

Tj / C

100

150

0

50

100

150

Tj / C

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

versus junction temperature T_j.

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dI_T/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dI_T/dt.

February 1996

5

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT137F series

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10.2

max

5.7

max

3.2

3.0

4.4

max

0.9

0.5

2.9 max

4.4

4.0

7.9

7.5

17

max

seating

plane

3.5 max

not tinned

4.4

13.5

min

1

2

3

0.9

0.7

M

0.4

0.55 max

1.3

2.54

5.08

top view

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

February 1996

6

Rev 1.100

Philips Semiconductors

Product specification

Triacs

BT137F series

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

February 1996

7

Rev 1.100

型号:	BT137F-800
生命周期：	Obsolete
IHS 制造商：	NXP SEMICONDUCTORS
零件包装代码：	SFM
包装说明：	PLASTIC, FULL PACK-3
针数：	3
Reach Compliance Code：	compliant
HTS代码：	8541.30.00.80
风险等级：	5.76
外壳连接：	ISOLATED
配置：	SINGLE
关态电压最小值的临界上升速率：	100 V/us
最大直流栅极触发电流：	35 mA
最大直流栅极触发电压：	1.5 V
最大维持电流：	20 mA
JESD-30 代码：	R-PSFM-T3
最大漏电流：	0.5 mA
元件数量：	1
端子数量：	3
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
认证状态：	Not Qualified
最大均方根通态电流：	8 A
重复峰值关态漏电流最大值：	500 µA
断态重复峰值电压：	800 V
子类别：	TRIACs
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：	1

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