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    产品型号BT139X-800E的Datasheet PDF文件预览

    Philips Semiconductors  
    Product specification  
    Triacs  
    sensitive gate  
    BT139X series E  
    GENERAL DESCRIPTION  
    QUICK REFERENCE DATA  
    Glass passivated, sensitive gate  
    triacs in a full pack plastic envelope,  
    intended for use in general purpose  
    bidirectional switching and phase  
    control applications, where high  
    sensitivity is required in all four  
    quadrants.  
    SYMBOL PARAMETER  
    MAX. MAX. MAX. UNIT  
    BT139X- 500E 600E 800E  
    VDRM  
    Repetitive peak off-state  
    voltages  
    500  
    600  
    800  
    V
    IT(RMS)  
    ITSM  
    RMS on-state current  
    Non-repetitive peak on-state  
    current  
    16  
    140  
    16  
    140  
    16  
    140  
    A
    A
    PINNING - SOT186A  
    PIN CONFIGURATION  
    SYMBOL  
    PIN  
    1
    DESCRIPTION  
    main terminal 1  
    case  
    T2  
    T1  
    2
    main terminal 2  
    gate  
    3
    G
    1
    2 3  
    case isolated  
    LIMITING VALUES  
    Limiting values in accordance with the Absolute Maximum System (IEC 134).  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    V
    -500  
    -600  
    -800  
    800  
    VDRM  
    Repetitive peak off-state  
    voltages  
    -
    -
    5001  
    6001  
    IT(RMS)  
    ITSM  
    RMS on-state current  
    Non-repetitive peak  
    on-state current  
    full sine wave; Ths ≤ 38 ˚C  
    full sine wave; Tj = 25 ˚C prior to  
    surge  
    16  
    A
    t = 20 ms  
    -
    -
    -
    140  
    150  
    98  
    A
    A
    t = 16.7 ms  
    I2t  
    dIT/dt  
    I2t for fusing  
    Repetitive rate of rise of  
    on-state current after  
    triggering  
    t = 10 ms  
    A2s  
    ITM = 20 A; IG = 0.2 A;  
    dIG/dt = 0.2 A/µs  
    T2+ G+  
    -
    50  
    50  
    50  
    10  
    2
    5
    5
    0.5  
    150  
    125  
    A/µs  
    A/µs  
    A/µs  
    A/µs  
    A
    T2+ G-  
    -
    T2- G-  
    -
    T2- G+  
    -
    IGM  
    Peak gate current  
    Peak gate voltage  
    Peak gate power  
    Average gate power  
    Storage temperature  
    Operating junction  
    temperature  
    -
    VGM  
    PGM  
    PG(AV)  
    Tstg  
    Tj  
    -
    V
    -
    -
    W
    over any 20 ms period  
    W
    -40  
    -
    ˚C  
    ˚C  
    1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
    switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
    September 1997  
    1
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    sensitive gate  
    BT139X series E  
    ISOLATION LIMITING VALUE & CHARACTERISTIC  
    Ths = 25 ˚C unless otherwise specified  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    Visol  
    Cisol  
    R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal  
    -
    2500  
    V
    three terminals to external  
    heatsink  
    waveform;  
    R.H. ≤ 65% ; clean and dustfree  
    Capacitance from T2 to external f = 1 MHz  
    heatsink  
    -
    10  
    -
    pF  
    THERMAL RESISTANCES  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    Rth j-hs  
    Rth j-a  
    Thermal resistance  
    junction to heatsink  
    full or half cycle  
    with heatsink compound  
    without heatsink compound  
    in free air  
    -
    -
    -
    -
    -
    55  
    4.0  
    5.5  
    -
    K/W  
    K/W  
    K/W  
    Thermal resistance  
    junction to ambient  
    STATIC CHARACTERISTICS  
    Tj = 25 ˚C unless otherwise stated  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    IGT  
    Gate trigger current  
    VD = 12 V; IT = 0.1 A  
    T2+ G+  
    T2+ G-  
    T2- G-  
    T2- G+  
    -
    -
    -
    -
    2.5  
    4.0  
    5.0  
    11  
    10  
    10  
    10  
    25  
    mA  
    mA  
    mA  
    mA  
    IL  
    Latching current  
    VD = 12 V; IGT = 0.1 A  
    T2+ G+  
    T2+ G-  
    T2- G-  
    T2- G+  
    -
    3.2  
    16  
    30  
    40  
    30  
    40  
    30  
    1.6  
    1.5  
    -
    mA  
    mA  
    mA  
    mA  
    mA  
    V
    -
    -
    4.0  
    5.5  
    4.0  
    1.2  
    0.7  
    0.4  
    0.1  
    -
    IH  
    VT  
    VGT  
    Holding current  
    On-state voltage  
    Gate trigger voltage  
    VD = 12 V; IGT = 0.1 A  
    IT = 20 A  
    -
    -
    VD = 12 V; IT = 0.1 A  
    -
    0.25  
    -
    V
    VD = 400 V; IT = 0.1 A; Tj = 125 ˚C  
    V
    ID  
    Off-state leakage current VD = VDRM(max); Tj = 125 ˚C  
    0.5  
    mA  
    DYNAMIC CHARACTERISTICS  
    Tj = 25 ˚C unless otherwise stated  
    SYMBOL PARAMETER  
    CONDITIONS  
    MIN. TYP. MAX. UNIT  
    dVD/dt  
    Critical rate of rise of  
    off-state voltage  
    Gate controlled turn-on  
    time  
    VDM = 67% VDRM(max); Tj = 125 ˚C;  
    exponential waveform; gate open circuit  
    ITM = 20 A; VD = VDRM(max); IG = 0.1 A;  
    dIG/dt = 5 A/µs  
    -
    50  
    -
    V/µs  
    tgt  
    -
    2
    -
    µs  
    September 1997  
    2
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    sensitive gate  
    BT139X series E  
    IT(RMS) / A  
    38 C  
    Ths(max) / C  
    = 180  
    Ptot / W  
    25  
    20  
    15  
    10  
    5
    25  
    45  
    65  
    20  
    1
    120  
    90  
    15  
    10  
    5
    60  
    30  
    85  
    105  
    125  
    0
    0
    -50  
    0
    50  
    Ths / C  
    100  
    150  
    0
    5
    10  
    15  
    20  
    IT(RMS) / A  
    Fig.1. Maximum on-state dissipation, Ptot, versus rms  
    on-state current, IT(RMS), where α = conduction angle.  
    Fig.4. Maximum permissible rms current IT(RMS)  
    versus heatsink temperature Ths.  
    ,
    ITSM / A  
    IT(RMS) / A  
    1000  
    100  
    10  
    50  
    40  
    30  
    20  
    10  
    0
    dIT/dt limit  
    I
    TSM  
    time  
    I
    T
    T2- G+ quadrant  
    T
    Tj initial = 25 C max  
    10ms 100ms  
    10us  
    100us  
    1ms  
    T / s  
    0.01  
    0.1  
    surge duration / s  
    1
    10  
    Fig.2. Maximum permissible non-repetitive peak  
    on-state current ITSM, versus pulse width tp, for  
    sinusoidal currents, tp ≤ 20ms.  
    Fig.5. Maximum permissible repetitive rms on-state  
    current IT(RMS), versus surge duration, for sinusoidal  
    currents, f = 50 Hz; Ths ≤ 38˚C.  
    VGT(Tj)  
    VGT(25 C)  
    ITSM / A  
    150  
    100  
    50  
    1.6  
    1.4  
    1.2  
    1
    I
    TSM  
    time  
    I
    T
    T
    Tj initial = 25 C max  
    0.8  
    0.6  
    0.4  
    0
    1
    10  
    100  
    1000  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Number of cycles at 50Hz  
    Fig.3. Maximum permissible non-repetitive peak  
    on-state current ITSM, versus number of cycles, for  
    sinusoidal currents, f = 50 Hz.  
    Fig.6. Normalised gate trigger voltage  
    VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
    September 1997  
    3
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    sensitive gate  
    BT139X series E  
    IGT(Tj)  
    IGT(25 C)  
    typ  
    IT / A  
    50  
    40  
    30  
    20  
    10  
    0
    Tj = 125 C  
    Tj = 25 C  
    3
    T2+ G+  
    T2+ G-  
    T2- G-  
    T2- G+  
    max  
    2.5  
    2
    Vo = 1.195 V  
    Rs = 0.018 Ohms  
    1.5  
    1
    0.5  
    0
    0
    0.5  
    1
    1.5  
    VT / V  
    2
    2.5  
    3
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Fig.7. Normalised gate trigger current  
    IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
    Fig.10. Typical and maximum on-state characteristic.  
    IL(Tj)  
    IL(25 C)  
    Zth j-hs (K/W)  
    10  
    1
    with heatsink compound  
    3
    2.5  
    2
    without heatsink compound  
    unidirectional  
    bidirectional  
    0.1  
    1.5  
    1
    t
    P
    p
    D
    0.01  
    0.001  
    t
    0.5  
    0
    10us  
    0.1ms  
    1ms  
    10ms  
    tp / s  
    0.1s  
    1s  
    10s  
    -50  
    0
    50  
    Tj / C  
    100  
    150  
    Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
    versus junction temperature Tj.  
    Fig.11. Transient thermal impedance Zth j-hs, versus  
    pulse width tp.  
    dVD/dt (V/us)  
    1000  
    IH(Tj)  
    IH(25C)  
    3
    2.5  
    2
    100  
    10  
    1
    1.5  
    1
    0.5  
    0
    -50  
    0
    50  
    100  
    150  
    0
    50  
    100  
    150  
    Tj / C  
    Tj / C  
    Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
    versus junction temperature Tj.  
    Fig.12. Typical, critical rate of rise of off-state voltage,  
    dVD/dt versus junction temperature Tj.  
    September 1997  
    4
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    sensitive gate  
    BT139X series E  
    MECHANICAL DATA  
    Dimensions in mm  
    Net Mass: 2 g  
    10.3  
    max  
    4.6  
    max  
    3.2  
    3.0  
    2.9 max  
    2.8  
    Recesses (2x)  
    6.4  
    2.5  
    0.8 max. depth  
    15.8  
    max  
    seating  
    plane  
    15.8  
    max.  
    19  
    max.  
    3 max.  
    not tinned  
    3
    2.5  
    13.5  
    min.  
    1
    2
    3
    M
    0.4  
    1.0 (2x)  
    0.6  
    2.5  
    0.9  
    0.7  
    2.54  
    0.5  
    5.08  
    1.3  
    Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.  
    Notes  
    1. Refer to mounting instructions for F-pack envelopes.  
    2. Epoxy meets UL94 V0 at 1/8".  
    September 1997  
    5
    Rev 1.200  
    Philips Semiconductors  
    Product specification  
    Triacs  
    sensitive gate  
    BT139X series E  
    DEFINITIONS  
    Data sheet status  
    Objective specification  
    This data sheet contains target or goal specifications for product development.  
    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
    Product specification  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
    or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
    operation of the device at these or at any other conditions above those given in the Characteristics sections of  
    this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    Philips Electronics N.V. 1997  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
    copyright owner.  
    The information presented in this document does not form part of any quotation or contract, it is believed to be  
    accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
    consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
    industrial or intellectual property rights.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices or systems where malfunction of these  
    products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
    for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
    from such improper use or sale.  
    September 1997  
    6
    Rev 1.200  
    配单直通车
    BT139X-800/L02产品参数
    型号:BT139X-800/L02
    生命周期：Transferred
    IHS 制造商：NXP SEMICONDUCTORS
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.83
    触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
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