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产品型号BT145-600R的Datasheet PDF文件预览

Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glasspassivatedthyristorsinaplastic  
envelope, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
applications  
bidirectional  
requiring  
blocking  
high  
BT145- 500R 600R 800R  
voltage  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
500  
600  
800  
V
capability and high thermal cycling  
performance. Typical applications  
include motor control, industrial and  
domestic lighting, heating and static  
switching.  
voltages  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
25  
300  
16  
25  
300  
16  
25  
300  
A
A
A
IT(RMS)  
ITSM  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
tab  
a
k
2
anode  
gate  
3
g
1 2 3  
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-500R -600R -800R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
5001  
6001  
800  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tmb 101 ˚C  
-
-
16  
25  
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
300  
330  
450  
200  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 50 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
5
5
5
20  
0.5  
150  
125  
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
-
-
over any 20 ms period  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
October 1997  
1
Rev 1.200  
Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
junction to mounting base  
Thermal resistance  
junction to ambient  
-
-
1.0  
K/W  
Rth j-a  
in free air  
-
60  
-
K/W  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
IL  
Gate trigger current  
Latching current  
Holding current  
VD = 12 V; IT = 0.1 A  
VD = 12 V; IGT = 0.1 A  
VD = 12 V; IGT = 0.1 A  
IT = 30 A  
-
5
35  
80  
60  
1.5  
1.0  
-
mA  
mA  
mA  
V
-
25  
IH  
-
-
20  
VT  
VGT  
On-state voltage  
Gate trigger voltage  
1.1  
0.6  
0.4  
0.2  
VD = 12 V; IT = 0.1 A  
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C  
-
0.25  
-
V
V
mA  
ID, IR  
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C  
1.0  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
Critical rate of rise of  
off-state voltage  
Gate controlled turn-on  
time  
Circuit commutated  
turn-off time  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform; gate open circuit  
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/µs  
VD = 67% VDRM(max); Tj = 125 ˚C;  
ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;  
dVD/dt = 50 V/µs  
200  
500  
-
-
-
V/µs  
tgt  
tq  
-
-
2
µs  
70  
µs  
October 1997  
2
Rev 1.200  
Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
ITSM / A  
Tmb(max) / C  
a = 1.57  
Ptot / W  
25  
2.2  
350  
300  
250  
200  
150  
100  
50  
100  
conduction form  
I
TSM  
time  
I
angle  
factor  
a
4
2.8  
2.2  
1.9  
1.57  
T
1.9  
degrees  
30  
60  
90  
120  
180  
105  
20  
15  
10  
5
T
Tj initial = 25 C max  
2.8  
110  
115  
120  
125  
4
0
0
0
5
10  
IF(AV) / A  
15  
20  
1
10  
100  
1000  
Number of half cycles at 50Hz  
Fig.1. Maximum on-state dissipation, Ptot, versus  
average on-state current, IT(AV), where a = form  
Fig.4. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
factor = IT(RMS)/ IT(AV)  
.
ITSM / A  
IT(RMS) / A  
10000  
1000  
100  
50  
40  
30  
20  
10  
0
dIT/dt limit  
I
TSM  
I
T
time  
T
Tj initial = 25 C max  
10ms  
10us  
100us  
1ms  
0.01  
0.1  
surge duration / s  
1
10  
T / s  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 10ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tmb 101˚C.  
VGT(Tj)  
IT(RMS) / A  
30  
25  
20  
15  
10  
5
VGT(25 C)  
1.6  
1.4  
1.2  
1
101 C  
0.8  
0.6  
0.4  
0
-50  
0
50  
Tmb / C  
100  
150  
-50  
0
50  
100  
150  
Tj / C  
Fig.3. Maximum permissible rms current IT(RMS)  
versus mounting base temperature Tmb.  
,
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
October 1997  
3
Rev 1.200  
Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
IGT(Tj)  
IGT(25 C)  
IT / A  
50  
40  
30  
20  
10  
0
Tj = 125 C  
Tj = 25 C  
3
2.5  
2
Vo = 1.045 V  
Rs = 0.011 ohms  
typ  
max  
1.5  
1
0.5  
0
0
0.5  
1
1.5  
2
-50  
0
50  
100  
150  
Tj / C  
VT / V  
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-mb (K/W)  
10  
1
3
2.5  
2
0.1  
1.5  
1
t
P
p
D
0.01  
0.001  
t
0.5  
0
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
versus junction temperature Tj.  
Fig.11. Transient thermal impedance Zth j-mb, versus  
pulse width tp.  
IH(Tj)  
IH(25 C)  
dVD/dt (V/us)  
10000  
3
2.5  
2
1000  
gate open circuit  
1.5  
1
100  
0.5  
0
10  
-50  
0
50  
Tj / C  
100  
150  
0
50  
100  
150  
Tj / C  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
versus junction temperature Tj.  
Fig.12. Typical, critical rate of rise of off-state voltage,  
dVD/dt versus junction temperature Tj.  
October 1997  
4
Rev 1.200  
Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
4,5  
max  
10,3  
max  
1,3  
3,7  
2,8  
5,9  
min  
15,8  
max  
3,0 max  
not tinned  
3,0  
13,5  
min  
1,3  
1 2 3  
max  
(2x)  
0,9 max (3x)  
0,6  
2,4  
2,54 2,54  
Fig.13. TO220AB; pin 2 connected to mounting base.  
Notes  
1. Refer to mounting instructions for TO220 envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
October 1997  
5
Rev 1.200  
Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1997  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
October 1997  
6
Rev 1.200  
配单直通车
BT145-600R产品参数
型号:BT145-600R
生命周期:Obsolete
IHS 制造商:WEEN SEMICONDUCTORS CO LTD
包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown
HTS代码:8541.30.00.80
风险等级:5.67
Is Samacsys:N
外壳连接:ANODE
配置:SINGLE
最大直流栅极触发电流:35 mA
JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3
元件数量:1
端子数量:3
最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
最大均方根通态电流:25 A
参考标准:IEC-134
断态重复峰值电压:600 V
重复峰值反向电压:600 V
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
触发设备类型:SCR
Base Number Matches:1
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