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产品型号BTA12的Datasheet PDF文件预览

BTA/BTB12 and T12 Series  
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD  
12A TRIACS  
MAIN FEATURES:  
A2  
Symbol  
Value  
12  
Unit  
I
A
V
G
T(RMS)  
V
/V  
A1  
600 and 800  
DRM RRM  
A2  
I
5 to 50  
mA  
GT (Q )  
1
DESCRIPTION  
A1  
A2  
G
Available either in through-hole or surface-mount  
packages, the BTA/BTB12 and T12 triac series is  
suitable for general purpose AC switching. They  
can be used as an ON/OFF function in  
applications such as static relays, heating  
regulation, induction motor starting circuits... or for  
phase control operation in light dimmers, motor  
speed controllers,...  
2
D PAK  
(T12-G)  
A2  
The snubberless versions (BTA/BTB...W and T12  
series) are specially recommended for use on  
inductive loads, thanks to their high commutation  
performances. Logic level versions are designed  
to interface directly with low power drivers such as  
microcontrollers. By using an internal ceramic  
pad, the BTA series provides voltage insulated tab  
(rated at 2500V RMS) complying with UL  
standards (File ref.: E81734)  
A1  
A2  
A1  
A2  
G
G
TO-220AB Insulated  
(BTA12)  
TO-220AB  
(BTB12)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
²
I
RMS on-state current (full sine wave)  
Tc = 105°C  
D PAK/TO-220AB  
TO-220AB Ins.  
F = 50 Hz  
T(RMS)  
12  
A
A
Tc = 90°C  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
120  
126  
TSM  
F = 60 Hz  
t = 16.7 ms  
²
²
²
tp = 10 ms  
78  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
/V  
A/µs  
V
I
= 2 x I , tr 100 ns  
G
GT  
V
Non repetitive surge peak off-state  
voltage  
DRM RRM  
+ 100  
V
/V  
tp = 10 ms  
tp = 20 µs  
DSM RSM  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
September 2002 - Ed: 6A  
1/7  
BTA/BTB12 and T12 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
T12  
T1235  
35  
BTA/BTB12  
Unit  
TW  
SW  
10  
CW  
BW  
I
(1)  
mA  
V
I - II - III MAX.  
I - II - III MAX.  
5
35  
50  
GT  
V
V
V
= 12 V  
R = 30 Ω  
L
D
1.3  
0.2  
GT  
V
= V  
R = 3.3 kI - II - III MIN.  
D
DRM  
L
GD  
V
Tj = 125°C  
I
(2)  
I = 100 mA  
MAX.  
35  
50  
60  
10  
10  
15  
15  
25  
30  
35  
50  
60  
50  
70  
80  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III  
II  
MAX.  
G
GT  
L
dV/dt (2)  
V
= 67 %V  
gate open  
DRM  
D
MIN.  
MIN.  
500  
20  
40  
500  
1000  
V/µs  
Tj = 125°C  
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C  
(dV/dt)c = 10 V/µs Tj = 125°C  
-
-
3.5  
1
6.5  
2.9  
-
-
-
-
-
A/ms  
Without snubber  
Tj = 125°C  
6.5  
-
6.5  
12  
STANDARD (4 Quadrants)  
Symbol  
Test Conditions  
Quadrant  
BTA/BTB12  
Unit  
C
B
I
(1)  
I - II - III  
IV  
25  
50  
50  
100  
mA  
GT  
MAX.  
V
V
= 12 V  
R = 30 Ω  
L
D
D
V
ALL  
ALL  
MAX.  
MIN.  
1.3  
0.2  
V
V
GT  
V
= V  
R = 3.3 kTj = 125°C  
GD  
DRM  
L
I
(2)  
I = 500 mA  
MAX.  
MAX.  
25  
40  
80  
200  
5
50  
50  
mA  
mA  
H
T
I
I
= 1.2 I  
I - III - IV  
II  
G
GT  
L
100  
400  
10  
dV/dt (2)  
V
= 67 %V  
gate open Tj = 125°C  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms  
Tj = 125°C  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Tj = 25°C  
Value  
Unit  
V (2)  
I
= 17 A  
tp = 380 µs  
MAX.  
MAX.  
MAX.  
1.55  
0.85  
35  
V
V
T
TM  
V
(2)  
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
V
= V  
RRM  
5
DRM  
RRM  
DRM  
MAX.  
1
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
2/7  
BTA/BTB12 and T12 Series  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
²
R
Junction to case (AC)  
°C/W  
1.4  
2.3  
45  
th(j-c)  
D PAK/TO-220AB  
TO-220AB Insulated  
²
²
R
Junction to ambient  
°C/W  
S = 1 cm  
D PAK  
th(j-a)  
TO-220AB  
TO-220AB Insulated  
60  
S = Copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Package  
Part Number  
Sensitivity  
Type  
600 V  
800 V  
BTA/BTB12-xxxB  
BTA/BTB12-xxxBW  
BTA/BTB12-xxxC  
BTA/BTB12-xxxCW  
BTA/BTB12-xxxSW  
BTA/BTB12-xxxTW  
T1235-xxxG  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
50 mA  
50 mA  
25 mA  
35 mA  
10 mA  
5 mA  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
Snubberless  
Standard  
Snubberless  
Logic level  
Logic Level  
Snubberless  
²
35 mA  
D PAK  
BTB: non insulated TO-220AB package  
ORDERING INFORMATION  
BT A 12 - 600 BW (RG)  
TRIAC  
SERIES  
PACKING MODE  
Blank: Bulk  
RG:Tube  
SENSITIVITY & TYPE  
B: 50mA STANDARD  
BW: 50mA SNUBBERLESS  
C: 25mA STANDARD  
CW: 35mA SNUBBERLESS  
SW: 10mA LOGIC LEVEL  
TW: 5mA LOGIC LEVEL  
INSULATION:  
A: insulated  
B: non insulated  
VOLTAGE:  
600: 600V  
800: 800V  
CURRENT: 12A  
T 12 35 - 600 G (-TR)  
TRIAC  
SERIES  
PACKAGE:  
G: D2PAK  
CURRENT: 12A  
VOLTAGE:  
PACKING MODE:  
Blank:Tube  
-TR:Tape & Reel  
600: 600V  
800: 800V  
SENSITIVITY:  
35: 35mA  
3/7  
BTA/BTB12 and T12 Series  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
BTA/BTB12-xxxyz  
BTA/BTB12-xxxyzRG  
T1235-xxxG  
BTA/BTB12-xxxyz  
BTA/BTB12-xxxyz  
T1235xxxG  
2.3 g  
2.3 g  
1.5 g  
1.5 g  
250  
50  
Bulk  
Tube  
50  
Tube  
T1235-xxxG-TR  
T1235xxxG  
1000  
Tape & reel  
Note: xxx = voltage, yy = sensitivity, z = type  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2-1: RMS on-state current versus case  
on-state current (full cycle).  
temperature (full cycle).  
P (W)  
IT(RMS) (A)  
16  
14  
13  
BTB/T12  
14  
12  
10  
8
12  
11  
10  
BTA  
9
8
7
6
5
4
3
2
1
0
6
4
2
IT(RMS)(A)  
Tc(°C)  
0
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
7
8
9
10 11 12  
Fig. 2-2: RMS on-state current versus ambient  
temperature (printed circuit board FR4, copper  
thickness: 35µm),full cycle.  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
K=[Zth/Rth]  
IT(RMS) (A)  
3.5  
1E+0  
2
D PAK  
2
Zth(j-c)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
(S=1cm )  
Zth(j-a)  
1E-1  
Tamb(°C)  
50 75  
tp(s)  
1E-2  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
100  
125  
4/7  
BTA/BTB12 and T12 Series  
Fig. 4:  
On-state characteristics (maximum  
Fig. 5: Surge peak on-state current versus  
values).  
number of cycles.  
ITM (A)  
ITSM (A)  
100  
10  
1
130  
120  
110  
t=20ms  
100  
Tj max  
One cycle  
Non repetitive  
Tj initial=25°C  
90  
80  
70  
60  
Tj=25°C  
Repetitive  
Tc=90°C  
50  
40  
30  
20  
Tj max.  
Vto = 0.85 V  
Rd = 35 mΩ  
Number of cycles  
VTM(V)  
10  
0
1
10  
100  
1000  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Fig. 6: Non-repetitive surge peak on-state  
Fig. 7: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
current for  
a
sinusoidal pulse with width  
tp < 10ms, and corresponding value of I²t.  
ITSM (A), I²t (A²s)  
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]  
2.5  
Tj initial=25°C  
dI/dt limitation:  
50A/µs  
1000  
100  
10  
2.0  
IGT  
ITSM  
I²t  
1.5  
IH & IL  
1.0  
0.5  
tp (ms)  
Tj(°C)  
40 60  
0.0  
-40 -20  
0.01  
0.10  
1.00  
10.00  
0
20  
80 100 120 140  
Fig. 8-1: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values) (BW/CW/T1235).  
Fig. 8-2: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values) (TW).  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
5.0  
4.5  
4.0  
2.8  
SW  
2.4  
3.5  
2.0  
TW  
C
3.0  
2.5  
2.0  
1.5  
1.0  
1.6  
B
BW/CW/T1235  
1.2  
0.8  
0.4  
(dV/dt)c (V/µs)  
(dV/dt)c (V/µs)  
0.5  
0.0  
0.0  
0.1  
1.0  
10.0  
100.0  
0.1  
1.0  
10.0  
100.0  
5/7  
BTA/BTB12 and T12 Series  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
Fig. 10: PAK Thermal resistance junction to  
ambient versus copper surface under tab (printed  
circuit board FR4, copper thickness: 35 µm).  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
Rth(j-a) (°C/W)  
6
80  
PAK  
70  
60  
50  
40  
30  
20  
5
4
3
2
1
10  
Tj (°C)  
S(cm²)  
0
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
0
25  
50  
75  
100  
125  
PACKAGE MECHANICAL DATA  
PAK (Plastic)  
DIMENSIONS  
Millimeters  
REF.  
Inches  
Typ. Max. Min. Typ. Max.  
A
E
Min.  
C2  
L2  
L3  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
A1  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2.0 MIN.  
FLAT ZONE  
L2  
L3  
R
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
6/7  
BTA/BTB12 and T12 Series  
PACKAGE MECHANICAL DATA  
TO-220AB / TO-220AB Ins.  
DIMENSIONS  
B
REF.  
Millimeters  
Inches  
C
b2  
Min. Typ. Max. Min. Typ. Max.  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
b1  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  
配单直通车
BTA12产品参数
型号:BTA12
生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant
风险等级:5.67
配置:SINGLE
JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3
元件数量:1
端子数量:3
最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
最大均方根通态电流:12 A
参考标准:TS 16949
断态重复峰值电压:600 V
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
触发设备类型:TRIAC
Base Number Matches:1
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