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产品型号BTA216X-800C的Datasheet PDF文件预览

Philips Semiconductors  
Preliminary specification  
Three quadrant triacs  
high commutation  
BTA216X series C  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high commutation  
triacs in a plastic envelope intended  
foruseincircuitswherehighstaticand  
dynamic dV/dt and high dI/dt can  
occur. These devices will commutate  
the full rated rms current at the  
maximum rated junction temperature,  
without the aid of a snubber.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BTA216X- 500C 600C 800C  
VDRM  
Repetitive peak off-state  
voltages  
500  
600  
800  
V
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
140  
16  
140  
16  
140  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
16  
A
Tmb 38 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
140  
150  
98  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
October 1997  
1
Rev 1.000  
Philips Semiconductors  
Preliminary specification  
Three quadrant triacs  
high commutation  
BTA216X series C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance  
junction to heatsink  
full or half cycle  
with heatsink compound  
without heatsink compound  
in free air  
-
-
-
-
-
55  
4.0  
5.5  
-
K/W  
K/W  
K/W  
Thermal resistance  
junction to ambient  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
Gate trigger current2  
VD = 12 V; IT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
2
2
2
18  
21  
34  
35  
35  
35  
mA  
mA  
mA  
IL  
Latching current  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
-
-
-
20  
30  
20  
15  
1.5  
1.5  
-
mA  
mA  
mA  
mA  
V
V
V
mA  
-
-
-
IH  
VT  
VGT  
Holding current  
On-state voltage  
Gate trigger voltage  
VD = 12 V; IGT = 0.1 A  
IT = 20 A  
-
-
-
1.2  
0.7  
0.4  
0.1  
VD = 12 V; IT = 0.1 A  
-
0.25  
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C  
ID  
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C  
0.5  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. UNIT  
dVD/dt  
dIcom/dt  
tgt  
Critical rate of rise of  
off-state voltage  
Critical rate of change of  
commutating current  
Gate controlled turn-on  
time  
VDM = 67% VDRM(max); Tj = 125 ˚C; exponential  
waveform; gate open circuit  
1000  
-
V/µs  
A/ms  
µs  
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; without  
snubber; gate open circuit  
3
-
14  
2
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/µs  
2 Device does not trigger in the T2-, G+ quadrant.  
October 1997  
2
Rev 1.000  
Philips Semiconductors  
Preliminary specification  
Three quadrant triacs  
high commutation  
BTA216X series C  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.3  
max  
4.6  
max  
3.2  
3.0  
2.9 max  
2.8  
Recesses (2x)  
6.4  
2.5  
0.8 max. depth  
15.8  
max  
seating  
plane  
15.8  
max.  
19  
max.  
3 max.  
not tinned  
3
2.5  
13.5  
min.  
1
2
3
M
0.4  
1.0 (2x)  
0.6  
2.5  
0.9  
0.7  
2.54  
0.5  
5.08  
1.3  
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
October 1997  
3
Rev 1.000  
Philips Semiconductors  
Preliminary specification  
Three quadrant triacs  
high commutation  
BTA216X series C  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1997  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
October 1997  
4
Rev 1.000  
配单直通车
BTA216X-800C产品参数
型号:BTA216X-800C
生命周期:Active
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3
Reach Compliance Code:compliant
HTS代码:8541.30.00.80
风险等级:5.75
外壳连接:ISOLATED
配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:35 mA
最大直流栅极触发电压:1.5 V
最大维持电流:15 mA
JESD-30 代码:R-PSFM-T3
最大漏电流:0.5 mA
元件数量:1
端子数量:3
最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
认证状态:Not Qualified
最大均方根通态电流:16 A
重复峰值关态漏电流最大值:500 µA
断态重复峰值电压:800 V
子类别:TRIACs
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
触发设备类型:SNUBBERLESS TRIAC
Base Number Matches:1
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