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产品型号BTA216X-800E的Datasheet PDF文件预览

Philips Semiconductors  
Objective specification  
Three quadrant triacs  
guaranteed commutation  
BTA216X series D, E and F  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated guaranteed commutation  
triacs in a full pack, plastic envelope  
intended for use in motor control circuits  
or with other highly inductive loads.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BTA216X- 600D  
-
BTA216X-  
BTA216X-  
600E 800E  
600F 800F  
These  
devices  
balance  
the  
requirements  
of  
commutation  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
800  
V
performance and gate sensitivity. The  
"sensitive gate" E series and "logic level"  
D series are intended for interfacing with  
low power drivers, including micro  
controllers.  
IT(RMS)  
ITSM  
16  
140  
16  
140  
A
A
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
6001  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave;  
16  
A
Ths 38 ˚C  
Non-repetitive peak  
on-state current  
full sine wave;  
Tj = 25 ˚C prior to  
surge  
t = 20 ms  
-
-
-
140  
150  
98  
A
A
t = 16.7 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
t = 10 ms  
A2s  
A/µs  
dIT/dt  
ITM = 20 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
100  
IGM  
-
-
-
-
2
5
5
A
V
W
W
VGM  
PGM  
PG(AV)  
over any 20 ms  
period  
0.5  
Tstg  
Tj  
Storage temperature  
Operating junction  
temperature  
-40  
-
150  
125  
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
October 1999  
1
Rev 1.000  
Philips Semiconductors  
Objective specification  
Three quadrant triacs  
guaranteed commutation  
BTA216X series D, E and F  
ISOLATION LIMITING VALUE & CHARACTERISTIC  
Ths = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Visol  
Cisol  
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal  
-
-
2500  
V
three terminals to external  
heatsink  
waveform;  
R.H. 65% ; clean and dustfree  
Capacitance from T2 to external f = 1 MHz  
heatsink  
-
10  
-
pF  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Thermal resistance  
junction to heatsink  
full or half cycle  
with heatsink compound  
without heatsink compound  
in free air  
-
-
-
-
-
55  
4.0  
5.5  
-
K/W  
K/W  
K/W  
Thermal resistance  
junction to ambient  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
BTA216X-  
MIN. TYP.  
MAX.  
...E  
UNIT  
...D  
...F  
IGT  
Gate trigger current2  
Latching current  
VD = 12 V; IT = 0.1 A  
T2+ G+  
-
-
-
-
-
-
5
5
5
10  
10  
10  
25  
25  
25  
mA  
mA  
mA  
T2+ G-  
T2- G-  
IL  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
-
-
-
-
-
-
15  
25  
25  
20  
30  
30  
25  
40  
40  
mA  
mA  
mA  
T2+ G-  
T2- G-  
IH  
Holding current  
VD = 12 V; IGT = 0.1 A  
-
-
15  
25  
30  
mA  
VT  
On-state voltage  
IT = 20 A  
-
-
1.2  
0.7  
0.4  
1.5  
1.5  
-
V
V
V
VGT  
Gate trigger voltage  
VD = 12 V; IT = 0.1 A  
VD = 400 V; IT = 0.1 A;  
Tj = 125 ˚C  
0.25  
ID  
Off-state leakage current VD = VDRM(max)  
;
-
0.1  
0.5  
mA  
Tj = 125 ˚C  
2 Device does not trigger in the T2-, G+ quadrant.  
October 1999  
2
Rev 1.000  
Philips Semiconductors  
Objective specification  
Three quadrant triacs  
guaranteed commutation  
BTA216X series D, E and F  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
BTA216X-  
VDM = 67% VDRM(max)  
Tj = 110 ˚C; exponential  
waveform; gate open  
circuit  
VDM = 400 V; Tj = 110 ˚C; 1.8  
IT(RMS) = 16 A;  
dVcom/dt = 20v/µs; gate  
open circuit  
MIN.  
...E  
60  
TYP. MAX. UNIT  
...D  
...F  
dVD/dt  
Critical rate of rise of  
off-state voltage  
;
30  
70  
-
-
-
-
V/µs  
dIcom/dt  
Critical rate of change of  
commutating current  
3.5  
5.3  
-
4.5  
6.3  
-
A/ms  
dIcom/dt  
Critical rate of change of  
commutating current  
VDM = 400 V; Tj = 110 ˚C; 4.3  
IT(RMS) = 16 A;  
dVcom/dt = 0.1v/µs; gate  
open circuit  
-
-
-
A/ms  
tgt  
Gate controlled turn-on  
time  
ITM = 20 A; VD = VDRM(max)  
IG = 0.1 A; dIG/dt = 5 A/µs  
;
-
2
µs  
October 1999  
3
Rev 1.000  
Philips Semiconductors  
Objective specification  
Three quadrant triacs  
guaranteed commutation  
BTA216X series D, E and F  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
10.3  
max  
4.6  
max  
3.2  
3.0  
2.9 max  
2.8  
Recesses (2x)  
2.5  
6.4  
0.8 max. depth  
15.8  
max  
seating  
plane  
15.8  
max.  
19  
max.  
3 max.  
not tinned  
3
2.5  
13.5  
min.  
1
2
3
M
0.4  
1.0 (2x)  
0.6  
2.5  
0.9  
0.7  
2.54  
0.5  
5.08  
1.3  
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.  
Notes  
1. Refer to mounting instructions for F-pack envelopes.  
2. Epoxy meets UL94 V0 at 1/8".  
October 1999  
4
Rev 1.000  
Philips Semiconductors  
Objective specification  
Three quadrant triacs  
guaranteed commutation  
BTA216X series D, E and F  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1999  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
October 1999  
5
Rev 1.000  
配单直通车
BTA216X-800E产品参数
型号:BTA216X-800E
生命周期:Obsolete
零件包装代码:SFM
包装说明:PLASTIC, SOT-186A, 3 PIN
针数:3
制造商包装代码:SOT186A
Reach Compliance Code:compliant
HTS代码:8541.30.00.80
风险等级:5.75
其他特性:SENSITIVE GATE
外壳连接:ISOLATED
配置:SINGLE
关态电压最小值的临界上升速率:60 V/us
最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V
最大维持电流:25 mA
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
最大漏电流:0.5 mA
元件数量:1
端子数量:3
最高工作温度:125 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
认证状态:Not Qualified
最大均方根通态电流:16 A
断态重复峰值电压:800 V
子类别:TRIACs
表面贴装:NO
端子面层:TIN
端子形式:THROUGH-HOLE
端子位置:SINGLE
触发设备类型:TRIAC
Base Number Matches:1
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