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    产品型号BTA225-600BT的Datasheet PDF文件预览

    BTA225-600BT  
    Three quadrant triacs high commutation  
    Rev. 01 — 3 March 2005  
    Product data sheet  
    1. Product profile  
    1.1 General description  
    Passivated high commutation triac in a SOT78 (TO-220AB) plastic package. Intended for  
    use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These  
    devices will commutate the full rated RMS current at the maximum rated junction  
    temperature, without the aid of a snubber.  
    1.2 Features  
    ■ High maximum junction temperature  
    ■ High commutation capability  
    1.3 Applications  
    ■ Motor control  
    ■ Industrial and domestic heating  
    1.4 Quick reference data  
    ■ VDRM ≤ 600 V  
    ■ ITSM ≤ 200 A  
    ■ IT(RMS) ≤ 25 A  
    ■ IGT ≤ 50 mA (T2+ G+; T2+ G−; T2− G−)  
    2. Pinning information  
    Table 1:  
    Pinning  
    Pin  
    1
    Description  
    Simplified outline  
    Symbol  
    main terminal 1 (T1)  
    main terminal 2 (T2)  
    gate (G)  
    mb  
    T2  
    T1  
    G
    2
    3
    sym051  
    mb  
    mounting base, connected to  
    main terminal 2 (T2)  
    1 2 3  
    03ab54  
    SOT78 (TO-220AB)  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    3. Ordering information  
    Table 2:  
    Ordering information  
    Type number Package  
    Name  
    Description  
    Version  
    BTA225-600BT SC-46  
    plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead  
    TO-220AB  
    SOT78  
    4. Limiting values  
    Table 3:  
    Limiting values  
    In accordance with the Absolute Maximum Rating System (IEC 60134).  
    Symbol  
    VDRM  
    Parameter  
    Conditions  
    Min  
    Max  
    600  
    25  
    Unit  
    V
    [1]  
    repetitive peak off-state voltage  
    RMS on-state current  
    -
    -
    IT(RMS)  
    full sine wave; Tmb ≤ 116 °C;  
    A
    see Figure 4 and 5  
    ITSM  
    non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to  
    surge; see Figure 2 and 3  
    tp = 20 ms  
    -
    -
    -
    -
    200  
    220  
    200  
    100  
    A
    tp = 16.7 ms  
    A
    A2s  
    I2t  
    I2t for fusing  
    t = 10 ms  
    dIT/dt  
    repetitive rate of rise of on-state  
    current after triggering  
    ITM = 30 A; IG = 0.2 A;  
    A/µs  
    dIG/dt = 0.2 A/µs  
    IGM  
    peak gate current  
    peak gate voltage  
    peak gate power  
    -
    2
    A
    VGM  
    PGM  
    PG(AV)  
    Tstg  
    Tj  
    -
    5
    V
    -
    5
    W
    W
    °C  
    °C  
    average gate power  
    storage temperature  
    junction temperature  
    over any 20 ms period  
    -
    0.5  
    +150  
    150  
    −40  
    -
    [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The  
    rate of rise of current should not exceed 15 A/µs.  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    2 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    001aac222  
    110  
    40  
    P
    tot  
    α
    T
    mb(max)  
    α = 180 °C  
    (°C)  
    (W)  
    α
    120 °C  
    30  
    20  
    10  
    0
    120  
    130  
    140  
    150  
    90 °C  
    60 °C  
    30 °C  
    0
    5
    10  
    15  
    20  
    25  
    30  
    I
    (A)  
    T(RMS)  
    α = conduction angle  
    Fig 1. Total power dissipation as a function of RMS on-state current; maximum values  
    001aac224  
    250  
    I
    TSM  
    I
    T
    I
    TSM  
    (A)  
    time  
    T initial = 25 °C max  
    t
    p
    200  
    j
    150  
    100  
    50  
    0
    2
    3
    1
    10  
    10  
    10  
    n
    f = 50 Hz  
    Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
    values  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    3 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    001aac223  
    3
    10  
    I
    TSM  
    (A)  
    dl /dt limit  
    T
    2
    10  
    I
    TSM  
    I
    T
    t
    time  
    p
    T initial = 25 °C max  
    j
    10  
    10  
    −5  
    −4  
    −3  
    −2  
    −1  
    10  
    10  
    10  
    10  
    t
    (s)  
    p
    tp ≤ 20 ms  
    Fig 3. Non-repetitive peak on-state current as a function of pulse width (tp) for sinusoidal currents; maximum  
    values  
    003aaa796  
    003aaa805  
    80  
    30  
    IT(RMS)  
    (A)  
    116 °C  
    IT(RMS)  
    (A)  
    60  
    40  
    20  
    0
    20  
    10  
    0
    10-2  
    10-1  
    1
    10  
    −50  
    0
    50  
    100  
    150  
    200  
    Tmb (°C)  
    surge duration (s)  
    f = 50 Hz; Tmb ≤ 116 °C  
    Fig 4. RMS on-state current as a function of surge  
    duration for sinusoidal currents  
    Fig 5. RMS on-state current as a function of mounting  
    base temperature; maximum values  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    4 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    5. Thermal characteristics  
    Table 4:  
    Symbol  
    Rth(j-mb)  
    Thermal characteristics  
    Parameter  
    Conditions  
    full cycle  
    Min  
    Typ  
    Max  
    1.0  
    1.4  
    -
    Unit  
    K/W  
    K/W  
    K/W  
    thermal resistance from  
    junction to mounting base  
    -
    -
    -
    -
    half cycle  
    in free air  
    -
    Rth(j-a)  
    thermal resistance from  
    junction to ambient  
    60  
    001aac229  
    10  
    Z
    th(j-mb)  
    (K/W)  
    1
    (1)  
    (2)  
    −1  
    −2  
    −3  
    10  
    10  
    10  
    P
    D
    t
    p
    t
    −5  
    −4  
    −3  
    −2  
    −1  
    10  
    10  
    10  
    10  
    10  
    1
    10  
    t
    (s)  
    p
    (1) Unidirectional  
    (2) Bidirectional  
    Fig 6. Transient thermal impedance as a function of pulse width  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    5 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    6. Characteristics  
    Table 5:  
    Characteristics  
    Tj = 25 °C unless otherwise specified.  
    Symbol Parameter  
    Static characteristics  
    IGT gate trigger current  
    Conditions  
    Min  
    Typ  
    Max  
    Unit  
    [1]  
    VD = 12 V; IT = 0.1 A;  
    see Figure 8  
    T2+ G+  
    T2+ G−  
    T2− G−  
    2
    2
    2
    18  
    21  
    34  
    50  
    50  
    50  
    mA  
    mA  
    mA  
    IL  
    latching current  
    VD = 12 V; IGT = 0.1 A;  
    see Figure 10  
    T2+ G+  
    T2+ G−  
    T2− G−  
    -
    -
    -
    -
    31  
    34  
    30  
    31  
    60  
    90  
    60  
    60  
    mA  
    mA  
    mA  
    mA  
    IH  
    holding current  
    VD = 12 V; IGT = 0.1 A;  
    see Figure 11  
    VT  
    on-state voltage  
    IT = 30 A; see Figure 9  
    -
    -
    1.3  
    0.7  
    1.55  
    1.5  
    V
    V
    VGT  
    gate trigger voltage  
    VD = 12 V; IT = 0.1 A;  
    see Figure 7  
    VD = 400 V; IT = 0.1 A;  
    Tj = 150 °C  
    0.25  
    -
    0.4  
    1
    -
    V
    ID  
    off-state leakage  
    current  
    VD = VDRM(max); Tj = 150 °C  
    5
    mA  
    Dynamic characteristics  
    dVD/dt  
    critical rate of rise of  
    off-state voltage  
    VDM = 67 % VDRM(max)  
    Tj = 150 °C; exponential  
    waveform; gate open circuit  
    ;
    1000  
    9
    4000  
    20  
    -
    -
    V/µs  
    dIcom/dt  
    critical rate of change  
    of commutating  
    current  
    VDM = 400 V; Tj = 150 °C;  
    A/ms  
    IT(RMS) = 25 A; without  
    snubber; gate open circuit;  
    see Figure 12  
    tgt  
    gate controlled  
    turn-on time  
    ITM = 30 A; VD = VDRM(max)  
    IG = 0.1 A; dIG/dt = 5 A/µs  
    ;
    -
    2
    -
    µs  
    [1] Device does not trigger in the T2−, G+ quadrant.  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    6 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    001aac225  
    001aac226  
    1.6  
    3
    I
    V
    GT(Tj)  
    GT(Tj)  
    I
    V
    GT(25°C)  
    GT(25°C)  
    (1)  
    1.2  
    2
    (2)  
    (3)  
    0.8  
    1
    0.4  
    −50  
    0
    −50  
    0
    50  
    100  
    150  
    0
    50  
    100  
    150  
    T (°C)  
    j
    T (°C)  
    j
    (1) T2− G−  
    (2) T2+ G−  
    (3) T2+ G+  
    Fig 7. Normalized gate trigger voltage as a function of  
    junction temperature  
    Fig 8. Normalized gate trigger current as a function of  
    junction temperature  
    001aac228  
    001aac227  
    3
    80  
    I
    T
    I
    L(Tj)  
    (A)  
    I
    L(25°C)  
    60  
    2
    40  
    20  
    0
    1
    (1) (2) (3)  
    0
    −50  
    0
    50  
    100  
    150  
    0
    1
    2
    3
    T (°C)  
    j
    V
    (V)  
    T
    VO = 1.073 V  
    RS = 0.015 Ω  
    (1) Tj = 150 °C; typical values  
    (2) Tj = 150 °C; maximum values  
    (3) Tj = 25 °C; maximum values  
    Fig 9. On-state current characteristics  
    Fig 10. Normalized latching current as a function of  
    junction temperature  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    7 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    001aac230  
    001aac231  
    3
    3
    10  
    I
    H(Tj)  
    dI  
    /dt  
    com  
    I
    (A/ms)  
    H(25°C)  
    2
    2
    10  
    1
    10  
    0
    −50  
    1
    0
    50  
    100  
    150  
    0
    40  
    80  
    120  
    160  
    T (°C)  
    T (°C)  
    j
    j
    Fig 11. Normalized holding current as a function of  
    junction temperature  
    Fig 12. Critical rate of change of commutating current  
    as a function of junction temperature; typical  
    values  
    7. Package information  
    Refer to mounting instructions for SOT78 (TO-220AB) package.  
    Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    8 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    8. Package outline  
    Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
    SOT78  
    E
    p
    A
    A
    1
    q
    mounting  
    base  
    D
    1
    D
    (1)  
    L
    L
    2
    1
    Q
    b
    1
    L
    1
    2
    3
    b
    c
    e
    e
    0
    5
    10 mm  
    scale  
    DIMENSIONS (mm are the original dimensions)  
    b
    L
    max.  
    (1)  
    2
    e
    A
    b
    D
    E
    L
    D
    L
    1
    A
    1
    c
    UNIT  
    p
    q
    Q
    1
    1
    4.5  
    4.1  
    1.39  
    1.27  
    0.9  
    0.6  
    1.3  
    1.0  
    0.7  
    0.4  
    15.8  
    15.2  
    6.4  
    5.9  
    10.3  
    9.7  
    15.0  
    13.5  
    3.30  
    2.79  
    3.8  
    3.6  
    3.0  
    2.7  
    2.6  
    2.2  
    mm  
    3.0  
    2.54  
    Note  
    1. Terminals in this zone are not tinned.  
    REFERENCES  
    JEDEC JEITA  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    01-02-16  
    03-01-22  
    SOT78  
    3-lead TO-220AB  
    SC-46  
    Fig 13. Package outline SOT78 (TO-220AB)  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    9 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    9. Revision history  
    Table 6:  
    Revision history  
    Document ID  
    Release date Data sheet status  
    20050303 Product data sheet  
    Change notice Doc. number  
    9397 750 14379  
    Supersedes  
    BTA225-600BT_1  
    -
    -
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    10 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    10. Data sheet status  
    Level Data sheet status[1] Product status[2] [3]  
    Definition  
    I
    Objective data  
    Development  
    This data sheet contains data from the objective specification for product development. Philips  
    Semiconductors reserves the right to change the specification in any manner without notice.  
    II  
    Preliminary data  
    Qualification  
    This data sheet contains data from the preliminary specification. Supplementary data will be published  
    at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
    order to improve the design and supply the best possible product.  
    III  
    Product data  
    Production  
    This data sheet contains data from the product specification. Philips Semiconductors reserves the  
    right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
    changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
    [1]  
    [2]  
    Please consult the most recently issued data sheet before initiating or completing a design.  
    The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
    URL http://www.semiconductors.philips.com.  
    [3]  
    For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
    11. Definitions  
    12. Disclaimers  
    Short-form specification — The data in a short-form specification is  
    extracted from a full data sheet with the same type number and title. For  
    detailed information see the relevant data sheet or data handbook.  
    Life support — These products are not designed for use in life support  
    appliances, devices, or systems where malfunction of these products can  
    reasonably be expected to result in personal injury. Philips Semiconductors  
    customers using or selling these products for use in such applications do so  
    at their own risk and agree to fully indemnify Philips Semiconductors for any  
    damages resulting from such application.  
    Limiting values definition — Limiting values given are in accordance with  
    the Absolute Maximum Rating System (IEC 60134). Stress above one or  
    more of the limiting values may cause permanent damage to the device.  
    These are stress ratings only and operation of the device at these or at any  
    other conditions above those given in the Characteristics sections of the  
    specification is not implied. Exposure to limiting values for extended periods  
    may affect device reliability.  
    Right to make changes — Philips Semiconductors reserves the right to  
    make changes in the products - including circuits, standard cells, and/or  
    software - described or contained herein in order to improve design and/or  
    performance. When the product is in full production (status ‘Production’),  
    relevant changes will be communicated via a Customer Product/Process  
    Change Notification (CPCN). Philips Semiconductors assumes no  
    responsibility or liability for the use of any of these products, conveys no  
    license or title under any patent, copyright, or mask work right to these  
    products, and makes no representations or warranties that these products are  
    free from patent, copyright, or mask work right infringement, unless otherwise  
    specified.  
    Application information — Applications that are described herein for any  
    of these products are for illustrative purposes only. Philips Semiconductors  
    make no representation or warranty that such applications will be suitable for  
    the specified use without further testing or modification.  
    13. Contact information  
    For additional information, please visit: http://www.semiconductors.philips.com  
    For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
    9397 750 14379  
    © Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
    Product data sheet  
    Rev. 01 — 3 March 2005  
    11 of 12  
    BTA225-600BT  
    Philips Semiconductors  
    Three quadrant triacs high commutation  
    14. Contents  
    1
    Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    General description. . . . . . . . . . . . . . . . . . . . . . 1  
    Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
    Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
    1.1  
    1.2  
    1.3  
    1.4  
    2
    Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
    Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
    Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
    Thermal characteristics. . . . . . . . . . . . . . . . . . . 5  
    Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
    Package information . . . . . . . . . . . . . . . . . . . . . 8  
    Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
    Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
    Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11  
    Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
    Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
    Contact information . . . . . . . . . . . . . . . . . . . . 11  
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    © Koninklijke Philips Electronics N.V. 2005  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
    written consent of the copyright owner. The information presented in this document does  
    not form part of any quotation or contract, is believed to be accurate and reliable and may  
    be changed without notice. No liability will be accepted by the publisher for any  
    consequence of its use. Publication thereof does not convey nor imply any license under  
    patent- or other industrial or intellectual property rights.  
    Date of release: 3 March 2005  
    Document number: 9397 750 14379  
    Published in The Netherlands  
    配单直通车
    BTA225-600BT产品参数
    型号:BTA225-600BT
    生命周期：Active
    包装说明：FLANGE MOUNT, R-PSFM-T3
    Reach Compliance Code：unknown
    HTS代码：8541.30.00.80
    风险等级：5.65
    外壳连接：MAIN TERMINAL 2
    配置：SINGLE
    JEDEC-95代码：TO-220AB
    JESD-30 代码：R-PSFM-T3
    JESD-609代码：e3
    元件数量：1
    端子数量：3
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    峰值回流温度（摄氏度）：NOT SPECIFIED
    认证状态：Not Qualified
    最大均方根通态电流：25 A
    参考标准：IEC-60134
    断态重复峰值电压：600 V
    表面贴装：NO
    端子面层：TIN
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    触发设备类型：SNUBBERLESS TRIAC
    Base Number Matches：1
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