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产品型号BTA410-800ET的Datasheet PDF文件预览

BTA410-800ET  
3Q Hi-Com Triac  
Rev.01 - 10 August 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic  
package. This "series ET" triac balances the requirements of commutation performance  
and gate sensitivity and is intended for interfacing with low power drivers including  
microcontrollers. It is used in applications where "high junction operating temperature"  
capability is required.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct interfacing with low power drivers and microcontrollers  
Good immunity to false turn-on by dV/dt  
High commutation capability with sensitive gate  
High junction operating temperature capability  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate for easy logic level triggering  
Triggering in three quadrants only  
3. Applications  
Applications subject to high temperature  
Electronic thermostats (heating and cooling)  
Motor controls e.g. washing machines and vacuum cleaners  
Refrigeration and air-conditioner compressor controls  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-state  
-
-
800  
V
voltage  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 131 °C;  
Fig. 1; Fig. 2; Fig. 3  
-
-
-
-
10  
A
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
state current Fig. 4; Fig. 5  
100  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+  
Tj = 25 °C; Fig. 7  
0.5  
0.5  
0.5  
-
-
-
10  
10  
10  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-  
Tj = 25 °C; Fig. 7  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67%  
50  
5
-
-
-
-
V/μs  
voltage  
of VDRM); exponential waveform; gate  
open circuit  
dIcom/dt  
rate of change of  
commutating current  
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;  
dVcom/dt = 20 V/μs; gate open circuit  
A/ms  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
T1  
Description  
Simplified outline  
Graphic symbol  
mb  
main terminal 1  
main terminal 2  
gate  
T2  
T1  
G
2
T2  
sym051  
3
G
mb  
T2  
mounting base; main  
terminal 2  
1
2 3  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
BTA410-800ET  
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting  
SOT78  
hole; 3-lead TO-220AB  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
2 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
7. Limiting values  
Table 4. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDRM  
repetitive peak off-state  
-
800  
V
voltage  
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 131 °C;  
Fig. 1; Fig. 2; Fig. 3  
-
-
10  
A
A
non-repetitive peak on-  
state current  
full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
Fig. 4; Fig. 5  
100  
full sine wave; Tj(init) = 25 °C t = 16.7 ms  
-
-
-
110  
50  
A
;
p
I2t  
I2t for fusing  
tp = 10ms; sine-wave pulse  
A2s  
dIT/dt  
rate of rise of on-state  
current  
IG = 20 mA  
100  
A/μs  
IGM  
peak gate current  
peak gate power  
-
2
A
PGM  
PG(AV)  
-
5
W
W
°C  
°C  
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.5  
150  
150  
T
stg  
-40  
-
Tj  
f = 50Hz; Tmb =131 °C  
Fig. 2. RMS on-state current as a function of surge  
duration; maximum values  
Fig. 1. RMS on-state current as a function of mounting  
base temperature; maximum values  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
3 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
α = conduction angle  
a = form factor = IT(RMS) / IT(AV)  
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values  
f = 50 Hz  
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
tp ≤ 20 ms ;  
(1) dIT/dt limit  
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
4 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
8. Thermal characteristics  
Table 5. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
full cycle; Fig. 6  
-
-
1.5  
K/W  
half cycle; Fig. 6  
in free air  
-
-
-
2
-
K/W  
K/W  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
60  
(1) Unidirectional (half cycle)  
(2) Bidirectional (full cycle)  
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
5 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
9. Characteristics  
Table 6. Characteristics  
Symbol  
Static characteristics  
IGT gate trigger current  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
0.5  
0.5  
0.5  
-
-
-
-
-
-
-
10  
10  
10  
25  
30  
25  
mA  
mA  
mA  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
IL  
latching current  
VD = 12 V; IG = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 8  
VD = 12 V; IG = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 8  
-
VD = 12 V; IG = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 8  
-
IH  
holding current  
VD = 12 V; Tj = 25 °C; Fig. 9  
IT = 15 A; Tj = 25 °C; Fig. 10  
VD = 12 V; Tj = 25 °C;Fig. 11  
VD = 400 V; Tj = 150 °C; Fig. 11  
VD = 800 V; Tj = 150 °C  
-
-
15  
1.6  
1
mA  
V
VT  
VGT  
on-state voltage  
gate trigger voltage  
-
1.3  
0.7  
0.4  
0.4  
-
V
0.25  
-
-
V
ID  
off-state current  
2
mA  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67%  
50  
2
-
-
-
-
V/μs  
voltage  
of VDRM); exponential waveform;  
gate open circuit  
dIcom/dt  
rate of change of  
commutating current  
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;  
dVcom/dt = 20 V/μs; (snubberless  
condition); gate open circuit  
A/ms  
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;  
dVcom/dt = 10 V/μs; gate open circuit  
3.5  
5
-
-
-
-
A/ms  
A/ms  
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A;  
dVcom/dt = 1 V/μs; gate open circuit  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
6 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
Fig. 8. Normalized latching current as a function of  
junction temperature  
(1) T2- G-  
(2) T2+ G-  
(3) T2+ G+  
Fig. 7. Normalized gate trigger current as a function of  
junction temperature  
Vo = 1.142 V; Rs = 0.027 Ω  
(1) Tj = 150 °C; typical values  
Fig. 9. Normalized holding current as a function of  
junction temperature  
(2) Tj = 150 °C; maximum values  
(3) Tj = 25 °C; maximum values  
Fig. 10. On-state current as a function of on-state voltage  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
7 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
Fig. 11. Normalized gate trigger voltage as a function of junction temperature  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
8 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
10. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
base  
D
1
D
(1)  
(1)  
L
L
1
2
Q
(2)  
b
1
L
(3×)  
(2)  
b
2
(2×)  
1
2
3
b(3×)  
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
2
(2)  
(2)  
(1)  
1
UNIT  
mm  
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.  
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.6  
1.0  
1.3  
1.0  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0 3.30  
12.8 2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
2.54  
3.0  
Notes  
1. Lead shoulder designs may vary.  
2. Dimension includes excess dambar.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
08-04-23  
08-06-13  
SOT78  
SC-46  
3-lead TO-220AB  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
9 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
Right to make changes — WeEn Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
11. Legal information  
Suitability for use — WeEn Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical  
or safety-critical systems or equipment, nor in applications where failure  
or malfunction of an WeEn Semiconductors product can reasonably  
be expected to result in personal injury, death or severe property or  
environmental damage. WeEn Semiconductors and its suppliers accept no  
liability for inclusion and/or use of WeEn Semiconductors products in such  
equipment or applications and therefore such inclusion and/or use is at the  
customer’s own risk.  
Data sheet status  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. WeEn Semiconductors makes  
no representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
[1  
lease consult the most recently issued document before initiating or  
P
completing a design.  
]
Customers are responsible for the design and operation of their applications  
and products using WeEn Semiconductors products, and WeEn  
Semiconductors accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the WeEn Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as for the planned  
application and use of customer’s third party customer(s). Customers should  
provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.ween-semi.com.  
Definitions  
WeEn Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using WeEn  
Semiconductors products in order to avoid a default of the applications  
and the products or of the application or use by customer’s third party  
customer(s). WeEn does not accept any liability in this respect.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. WeEn Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local WeEn  
Semiconductors sales office. In case of any inconsistency or conflict with the  
short data sheet, the full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
WeEn Semiconductors and its customer, unless WeEn Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the WeEn Semiconductors product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Disclaimers  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific WeEn Semiconductors product is automotive  
qualified, the product is not suitable for automotive use. It is neither qualified  
nor tested in accordance with automotive testing or application requirements.  
WeEn Semiconductors accepts no liability for inclusion and/or use of non-  
automotive qualified products in automotive equipment or applications.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, WeEn Semiconductors does not  
give any representations or warranties, expressed or implied, as to the  
accuracy or completeness of such information and shall have no liability for  
the consequences of use of such information. WeEn Semiconductors takes  
no responsibility for the content in this document if provided by an information  
source outside of WeEn Semiconductors.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without WeEn Semiconductors’ warranty  
of the product for such automotive applications, use and specifications, and  
(b) whenever customer uses the product for automotive applications beyond  
WeEn Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies WeEn Semiconductors for  
any liability, damages or failed product claims resulting from customer  
design and use of the product for automotive applications beyond WeEn  
Semiconductors’ standard warranty and WeEn Semiconductors’ product  
specifications.  
In no event shall WeEn Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability  
towards customer for the products described herein shall be limited in  
accordance with the Terms and conditions of commercial sale of WeEn  
Semiconductors.  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
10 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
11 / 12  
WeEn Semiconductors  
BTA410-800ET  
3Q Hi-Com Triac  
12. Contents  
1. General description.......................................................1  
2. Features and benefits ...................................................1  
3. Applications...................................................................1  
4. Quick reference data.....................................................1  
5. Pinning information.......................................................2  
6. Ordering information.....................................................2  
7. Limiting values ..............................................................3  
8. Thermal characteristics................................................5  
9. Characteristics...............................................................6  
10. Package outline...........................................................9  
11. Legal information.......................................................10  
12. Contents.....................................................................12  
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
For more information, please visit: http://www.ween-semi.com  
For sales office addresses, please send an email to: salesaddresses@ween-semi.com  
Date of release: 10 August 2018  
©
BTA410-800ET  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2018. All rights reserved  
Product data sheet  
10 August 2018  
12 / 12  
配单直通车
BTA410-800ET产品参数
型号:BTA410-800ET
生命周期:Active
IHS 制造商:WEEN SEMICONDUCTORS CO LTD
包装说明:,
Reach Compliance Code:unknown
风险等级:5.27
JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:TIN
处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1
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