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产品型号BTB04-600D的Datasheet PDF文件预览

BTA04 T/D/S/A  
BTB04 T/D/S/A  
®
SENSITIVE GATE TRIACS  
A2  
FEATURES  
Very low IGT = 10mA max  
Low IH = 15mA max  
BTA Family:  
Insulating voltage = 2500V(RMS)  
(UL recognized: E81734)  
G
A1  
DESCRIPTION  
The BTA/BTB04 T/D/S/A triac family are high per-  
formance glass passivated PNPN devices.  
These parts are suitables for general purpose ap-  
plications where gate high sensitivity is required.  
Application on 4Q such as phase control and static  
switching.  
A1  
A2  
G
TO-220AB  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
IT(RMS)  
RMS on-state current (360° conduction angle)  
BTA  
BTB  
Tc = 90°C  
Tc = 95°C  
tp = 8.3ms  
tp = 10ms  
tp = 10ms  
4
A
ITSM  
Non repetitive surge peak on-state current  
(Tj initial = 25°C)  
42  
40  
8
A
I2t  
I2t value  
A2s  
dI/dt  
Critical rate of rise of on-state current  
Gate supply: IG = 50mA dIG/dt = 0.1A/µs  
Repetitive  
F = 50Hz  
10  
A/µs  
Non repetitive  
50  
Tstg  
Tj  
Storage and operating junction temperature range  
-40 to +150  
-40 to +110  
°C  
°C  
Tl  
Maximum lead soldering temperature during 10s at 4.5mm from case  
260  
BTA / BTB04-  
Symbol  
Parameter  
Unit  
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A  
VDRM  
VRRM  
400  
600  
700  
V
Repetitive peak off-state voltage Tj = 110°C  
September 2001 - Ed: 1A  
1/6  
BTA04 T/D/S/A BTB04 T/D/S/A  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
BTA  
BTB  
BTA  
BTB  
4.4  
3.2  
Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz)  
3.3  
°C/W  
2.4  
GATE CHARACTERISTICS (maximum values)  
P
G(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)  
ELECTRICAL CHARACTERISTICS  
BTA / BTB04  
Symbol  
Test conditions  
Quadrant  
Unit  
T
5
5
D
5
S
A
IGT  
VD = 12V (DC) RL = 33Ω  
Tj = 25°C  
I - II - III  
IV  
MAX.  
MAX.  
MAX.  
MIN.  
10  
10  
10  
25  
mA  
10  
VGT  
VGD  
tgt  
VD = 12V (DC) RL = 33Ω  
Tj = 25°C  
Tj =110°C  
Tj = 25°C  
I - II - III - IV  
I - II - III - IV  
I - II - III - IV  
1.5  
0.2  
2
V
V
VD = VDRM  
RL = 3.3kΩ  
VD = VDRM IG = 40mA  
dIG/dt = 0.5A/µs  
TYP.  
µs  
IL  
IG = 1.2IGT  
Tj = 25°C  
I - III - IV  
II  
TYP.  
10  
20  
15  
10  
20  
15  
20  
40  
25  
20  
40  
25  
mA  
IH*  
IT = 100mA Gate open  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 110°C  
Tj = 110°C  
MAX.  
MAX.  
MAX.  
MAX.  
TYP.  
MIN.  
mA  
V
VTM  
*
ITM = 5.5A  
VDRM rated  
tp = 380µs  
1.65  
0.01  
0.75  
IDRM  
IRRM  
mA  
V
RRM rated  
dV/dt *  
Linear slope up to  
VD = 67% VDRM gate open  
10  
-
10  
-
-
-
V/µs  
10  
5
10  
5
(dI/dt)c* (dI/dt)c = 1.8A/ms  
Tj = 110°C  
TYP.  
1
1
V/µs  
* For either polarity of electrode A2 voltage with reference to electrode A1  
2/6  
BTA04 T/D/S/A BTB04 T/D/S/A  
PRODUCT INFORMATION  
IT(RMS)  
VDRM / VRRM  
Sensitivity Specification  
Package  
A
V
T
X
X
X
X
X
D
X
X
S
A
BTA  
4
400  
600  
700  
400  
600  
X
(Insulated)  
X
X
BTB  
(Uninsulated)  
ORDERING INFORMATION  
BT A 04 - 400 T  
Triac  
Series  
Sensitivity  
Insulation:  
A: insulated  
Voltage:  
B: non insulated  
400: 400V  
600: 600V  
700: 700V  
Current: 04A  
3/6  
BTA04 T/D/S/A BTB04 T/D/S/A  
Fig. 1: Maximum RMS power dissipation versus  
RMS on-state current (F = 50Hz).(Curves are cut  
off by (dI/dt)c limitation)  
Fig. 2: Correlation between maximum RMS power  
dissipation and maximum allowable temperature  
(Tamb and Tcase) for different thermal resistances  
heatsink + contact (BTA).  
Fig. 3: Correlation between maximum RMS power  
dissipation and maximum allowable temperature  
(Tamb and Tcase) for different thermal resistances  
heatsink + contact (BTB).  
Fig. 4: RMS on-state current versus case temper-  
ature.  
Fig. 6: Relative variation of gate trigger current  
and holding current versus junction temperature.  
Fig. 5: Relative variation of thermal impedance  
versus pulse duration.  
Zth/Rth  
1
Zth(j-c)  
0.1  
Zth(j-a)  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
4/6  
BTA04 T/D/S/A BTB04 T/D/S/A  
Fig. 7: Non repetitive surge peak on-state current  
versus number of cycles.  
Fig. 8: Non repetitive surge peak on-state current  
for a sinusoidal pulse with width: t 10ms, and cor-  
responding value of I2t.  
Fig. 9: On-state characteristics (maximum values).  
5/6  
BTA04 T/D/S/A BTB04 T/D/S/A  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
B
C
b2  
A
15.20  
15.90 0.598  
0.625  
a1  
3.75  
0.147  
L
a2 13.00  
10.00  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
F
I
B
A
b1 0.61  
b2 1.23  
l4  
C
4.40  
c1 0.49  
c2 2.40  
c2  
a1  
e
F
I
2.40  
6.20  
3.75  
l3  
l2  
a2  
I4 15.80 16.40 16.80 0.622 0.646 0.661  
L
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
OTHER INFORMATION  
Ordering type  
Marking  
Package  
Weight  
2.3 g  
Base qty  
Delivery mode  
BTA/BTB04-xxxy  
BTA/BTB04-xxxy  
TO-220AB  
250  
Bulk  
Epoxy meets UL94,V0  
Cooling method: C  
Recommended torque value: 0.8 m.N.  
Maximum torque value: 1 m.N.  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
6/6  
配单直通车
BTB04-600D产品参数
型号:BTB04-600D
是否Rohs认证: 符合
生命周期:Obsolete
IHS 制造商:STMICROELECTRONICS
零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3
Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80
风险等级:5.82
其他特性:UL RECOGNIZED
配置:SINGLE
最大直流栅极触发电流:5 mA
最大直流栅极触发电压:2.5 V
最大维持电流:15 mA
JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
最大漏电流:0.75 mA
元件数量:1
端子数量:3
最高工作温度:110 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
认证状态:Not Qualified
最大均方根通态电流:4 A
断态重复峰值电压:600 V
子类别:TRIACs
表面贴装:NO
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1
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