BTS240-A各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

TEMPFET^®BTS 240 A

Features

● N channel

● Enhancement mode

● Temperature sensor with thyristor characteristic

● The drain pin is electrically shorted to the tab

3

2

1

2

3

G

D

S

Type

V_DS

I_D

R_DS(on)

Package

Ordering Code

BTS 240A

50 V

58 A

0.018 Ω

TO-218AA

C67078-A5100-A3

Maximum Ratings

Parameter

Symbol

Values

50

Unit

Drain-source voltage

V_DS

V_DGR

V_GS

I_D

V

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

50

± 20

58

Continuous drain current, T_C= 73 °C

A

ISO drain current

I_D-ISO

21.0

T_C= 85 ˚C, V_GS= 10 V, V_DS= 0.5 V

Pulsed drain current,

Short circuit current,

T_C= 25 °C

I_{D puls}

I_SC

232

147

2200

170

T_j= – 55 ... + 150 °C

Short circuit dissipation, T_j= – 55 ... + 150 °C

Power dissipation

W

P_SCmax

P_tot

Operating and storage temperature range

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

T_j, T_stg

–

– 55 ... + 150

E

°C

–

55/150/56

Thermal resistance

Chip-case

Chip-ambient

K/W

R_{th JC}

R_{th JA}

≤ 0.74

≤ 45

1

04.97

TEMPFET^®BTS 240 A

Electrical Characteristics

at T = 25 °C, unless otherwise specified.

j

Parameter

Symbol

Values

typ.

Unit

min.

max.

Static Characteristics

Drain-source breakdown voltage

V_(BR)DSS

V_GS(th)

I_DSS

V

_GS= 0, I_D= 0.25 mA

Gate threshold voltage

_GS= V_DS, I_D= 1 mA

Zero gate voltage drain current

_GS= 0 V, V_DS= 50 V

50

–

V

2.5

3.0

3.5

µA

V

T_j= 25 °C

T_j= 125 °C

–

0.1

10

1.0

100

Gate-source leakage current

_GS= 20 V, V_DS= 0

I_GSS

V

T_j= 25 °C

T_j= 150 °C

–

10

2.0

100

4.0

nA

µA

Drain-source on-state resistance

_GS= 10 V, I_D=47 A

R_DS(on)

Ω

V

–

0.012

0.018

Dynamic Characteristics

Forward transconductance

g_fs

S

V

_DS≥ 2 × I_D× R_DS(on)max, I_D= 47 A

Input capacitance

_GS= 0, V_DS= 25 V, f = 1 MHz

Output capacitance

_GS= 0, V_DS= 25 V, f = 1 MHz

Reverse transfer capacitance

_GS= 0, V_DS= 25 V, f = 1 MHz

Turn-on time t_on, (t_on= t_d(on)+ t_r)

_CC= 30 V, V_GS= 10 V, I_D= 3 A, R_GS= 50 Ω

Turn-off time t_off, (t_off= t_d(off)+ t_f)

_CC= 30 V, V_GS= 10 V, I_D= 3 A, R_GS= 50 Ω

20.0

–

43.0

2.9

–

C_iss

C_oss

C_rss

nF

V

4.3

2.1

V

–

1.4

V

–

0.5

50

0.8

75

t_d(on)

t_r

t_d(off)

t_f

ns

V

150

350

250

230

560

330

V

2

04.97

TEMPFET^®BTS 240 A

Electrical Characteristics (cont’d)

at T = 25 °C, unless otherwise specified.

j

Parameter

Symbol

Values

typ.

Unit

min.

max.

Reverse Diode

Continuous source current

Pulsed source current

I_S

–

58

A

I_SM

V_SD

232

Diode forward on-voltage

V

I_F= 116 A, V_GS= 0

–

1.6

100

0.3

2.0

–

Reverse recovery time

I_F= I_S, di_F/dt = 100 A/µs, V_R= 30 V

t_rr

ns

µC

Reverse recovery charge

I_F= I_S, di_F/dt = 100 A/µs, V_R= 30 V

Q_rr

–

Temperature Sensor

Forward voltage

V_TS(on)

V

I

_TS(on)= 10 mA, T = – 55 ... + 150 °C

0.7

1.4

1.5

10

j

Sensor override, t_p≤ 100 µs

T = – 55 ... + 160 °C

–

j

Forward current

I_TS(on)

mA

T = – 55 ... + 150 °C

Sensor override, t_p≤ 100 µs

T = – 55 ... + 160 °C

j

–

10

j

600

Holding current, V_TS(off)= 5 V, T_j= 25 °C

T_j= 150 °C

I_H

0.05

0.1

0.2

0.5

0.3

Switching temperature

V_TS= 5 V

T_TS(on)

t_off

°C

µs

150

0.5

–

Turn-off time

V_TS= 5 V, I_TS(on)= 2 mA

2.5

3

04.97

TEMPFET^®BTS 240 A

Examples for short-circuit protection

at T = – 55 ... + 150 °C, unless otherwise specified.

j

Parameter

Symbol

Examples

2

Unit

1

–

Drain-source voltage

Gate-source voltage

Short-circuit current

Short-circuit dissipation

Response time

V_DS

V_GS

I_SC

15

30

–

V

6.4

5.1

< 147

< 2200

< 67

< 2000

A

P_SC

t_SC(off)

W

ms

T = 25 °C, before short circuit

j

< 25

–

Short-circuit protection I_SC= f (V_DS)

Parameter: V_GS

Max. gate voltage V_GS(SC)= f (V_DS)

Parameter: T_j= – 55 ... + 150 °C

DiagramtodetermineI_SCforT_j=–55...+150°C

4

04.97

TEMPFET^®BTS 240 A

Max. power dissipation P_tot= f (T_C)

Typ. drain-source on-state resistance

_DS(on)= f (I_D)

Parameter: V_GS

R

Typical output characteristics I_D= f (V_DS)

Parameter: t_p= 80 µs

Safe operating area I_D= f (V_DS)

Parameter: D = 0.01, T_C= 25 °C

5

04.97

TEMPFET^®BTS 240 A

Drain-source on-state resistance

_DS(on)= f (T_j)

Gate threshold voltage V_GS(th)= f (T_j)

Parameter: V_DS= V_GS, I_D= 1 mA

R

Parameter: I_D= 47 A, V_GS= 10 V (spread)

Typ. transfer characteristic

I_D= f (V_GS)

Typ. transconductance g_fs= f (I_D)

Parameter: t_p= 80 µs, V_DS= 25 V

6

04.97

TEMPFET^®BTS 240 A

Continuous drain current I_D= f (T_C)

Parameter: V_GS≥ 10 V

Forward characteristics of reverse diode

I_F= f (V_SD)

Parameter: T_j, t_p= 80 µs (spread)

Typ. gate-source leakage current

Typ. capacitances C = f (V_DS)

Parameter: V_GS= 0, f = 1 MHz

I_GSS= f (T_C)

Parameter: V_GS= 20 V, V_DS= 0

7

04.97

TEMPFET^®BTS 240 A

Transient thermal impedance Z_thJC= f (t_p)

Parameter: D = t_p/T

8

04.97

TEMPFET^®BTS 240 A

TO-218 AA

Ordering Code

Standard

C67078-S5100-A3

9

04.97

TEMPFET^®BTS 240 A

Edition 04.97

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 München, Germany

©

Infineon Technologies AG 2000.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address

list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

10

04.97

型号:	BTS240A
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	SIEMENS A G
包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.44
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
最小漏源击穿电压：	50 V
最大漏极电流 (ID)：	58 A
最大漏源导通电阻：	0.018 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	0.8 pF
JEDEC-95代码：	TO-218AA
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL
功耗环境最大值：	170 W
最大脉冲漏极电流 (IDM)：	232 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
最大关闭时间（toff）：	890 ns
最大开启时间（吨）：	305 ns

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