BTS43212各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

®

PROFET BTS 432 I2

Smart Highside Power Switch

Features

Product Summary

1

·

)

Load dump and reverse battery protection

Clamp of negative voltage at output

Short-circuit protection

Current limitation

Thermal shutdown

Diagnostic feedback

Open load detection in OFF-state

CMOS compatible input

Electrostatic discharge (ESD) protection

Loss of ground and loss of V protection

V

80

58

V

Load dump

V -V_OUTAvalanche Clamp

bb

V

R

4.5 ... 42

-32

V

bb (operation)

bb (reverse)

ON

38

42

mW

A

I

L(SCp)

I

33

A

L(SCr)

I

11

A

L(ISO)

2)

bb

Overvoltage protection

Undervoltage and overvoltage shutdown with auto-restart and

hysteresis

5

Application

5

·

1

mC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

Standard

SMD

·

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

â

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

R

bb

+ V

bb

3

Voltage

source

V

Overvoltage

protection

Current

limit

Gate

protection

Logic

OUT

Charge pump

Level shifter

Limit for

unclamped

ind. loads

Voltage

sensor

5

Temperature

sensor

Rectifier

IN

2

Open load

detection

Load

Logic

ESD

4

ST

Short circuit

detection

â

PROFET

GND

1

Load GND

Signal GND

1)

2)

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Infineon Technologies AG

Page 1 of 15

1999-02-19

BTS 432 I2

1

Symbol

GND

IN

Function

-

Logic ground

2

I

Input, activates the power switch in case of logical high signal

3

V

+

Positive power supply voltage,

the tab is shorted to this pin

bb

4

5

ST

S

Diagnostic feedback, low on failure

Output to the load

OUT

O

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Values

Unit

V

Supply voltage (overvoltage protection see page 3)

V_bb

V_s³⁾

63

Load dump protection V_LoadDump= U_A+ V_s, U_A= 13.5 V

R_I= 2 W, R_L= 1.1 W, t_d= 200 ms, IN= low or high

66.5

V

Load current (Short-circuit current, see page 4)

Operating temperature range

I_L

self-limited

-40 ...+150

-55 ...+150

A

T_j

°C

Storage temperature range

T_stg

P_tot

Power dissipation (DC)

125

W

Inductive load switch-off energy dissipation,

single pulse

T=150 °C: E_AS

1.7

2.0

J

j

Electrostatic discharge capability (ESD)

(Human Body Model)

V_ESD

kV

Input voltage (DC)

V_IN

-0.5 ... +6

±5.0

V

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 6...

I

IN

mA

±5.0

I_ST

Thermal resistance

chip - case: R_thJC

£ 1 K/W

£ 75

£ tbd

junction - ambient (free air): R_thJA

SMD version, device on pcb⁴⁾:

3)

4)

V_Sis setup without DUT connected to the generator per ISO 7637-1 and DIN 40839

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70mm thick) copper area for V

bb

connection. PCB is vertical without blown air.

Infineon Technologies AG

Page 2

1999-02-19

BTS 432 I2

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

bb

min

--

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

I_L= 2 A

T=25 °C: R_ON

j

30

55

11

38

70

--

mW

T=150 °C:

j

Nominal load current (pin 3 to 5)

I_L(ISO)

9

A

ISO Proposal: V_ON= 0.5 V, T_C= 85 °C

Output current (pin 5) while GND disconnected or

GND pulled up, V_IN= 0, see diagram page 7,

I_L(GNDhigh)

--

1

mA

T =-40...+150°C

j

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

50

10

160

--

300

80

ms

R_L= 12 W, T =-40...+150°C

j

Slew rate on

dV /dt_on

-dV/dt_off

0.4

1

--

2.5 V/ms

5 V/ms

10 to 30% V_OUT, R_L= 12 W, T =-40...+150°C

j

Slew rate off

70 to 40% V_OUT, R_L= 12 W, T =-40...+150°C

j

Operating Parameters

Operating voltage ⁵⁾

Undervoltage shutdown

Undervoltage restart

T =-40...+150°C: V_bb(on)

4.5

2.4

--

42

4.5

7.5

V

j

T =-40...+150°C: V_bb(under)

j

T =-40...+150°C: V_{bb(u rst)}

j

--

Undervoltage restart of charge pump

see diagram page 12

V_bb(ucp)

--

6.5

T =-40...+150°C:

j

Undervoltage hysteresis

DV_bb(under)= V_{bb(u rst)}- V_bb(under)

DV_bb(under)

--

0.2

--

V

Overvoltage shutdown

Overvoltage restart

Overvoltage hysteresis

Overvoltage protection⁶⁾

I_bb=40 mA

T =-40...+150°C: V_bb(over)

42

--

52

--

V

j

T =-40...+150°C: V_{bb(o rst)}

j

T =-40...+150°C: DV_bb(over)

j

0.2

--

67

--

T =-40°C: V_bb(AZ)

j

T =25...+150°C:

j

60

63

--

Standby current (pin 3)

V_IN=0, I_ST=0,

I_bb(off)

mA

--

40

50

70

110

T_j=-40...+25°C:

T_j=150°C:

Operating current (Pin 1)⁷⁾, V_IN=5 V

I_GND

--

1.1

-- mA

5)

At supply voltage increase up to V = 6.5 V typ without charge pump, V

»V - 2 V

bb

OUT

6)

7)

see also V

in table of protection functions and circuit diagram page 7. Meassured without load.

ON(CL)

Add I , if I > 0, add I , if V >5.5 V

ST

IN

Infineon Technologies AG

Page 3

1999-02-19

BTS 432 I2

Protection Functions

Initial peak short circuit current limit (pin 3 to 5)⁸⁾,

I_L(SCp)

( max 400 ms if V_ON> V_ON(SC)

)

_Tj=-40°C:

_Tj=25°C:

_Tj=+150°C:

--

22

--

42

--

72

--

A

Repetitive short circuit current limit

I_L(SCr)

T_j= T_jt(see timing diagrams, page 10)

20

80

33

--

A

Short circuit shutdown delay after input pos. slope

V_ON> V_ON(SC)T_j=-40..+150°C: t_d(SC)

,

400

ms

min value valid only, if input "low" time exceeds 30 ms

Output clamp (inductive load switch off)

at V_OUT= V_bb- V_ON(CL), I_L= 30 mA

V_ON(CL)

--

58

--

V

Short circuit shutdown detection voltage

(pin 3 to 5)

V_ON(SC)

T_jt

--

150

--

8.3

--

V

°C

K

Thermal overload trip temperature

Thermal hysteresis

Inductive load switch-off energy dissipation⁹⁾,

DT_jt

E_AS

10

--

1.7

1.3

1.0

J

T_{j Start}= 150 °C, single pulse

V_bb= 12 V: E_Load12

V_bb= 24 V: E_Load24

Reverse battery (pin 3 to 1) ¹⁰⁾

Integrated resistor in V_bbline

-V_bb

--

32

--

V

R_bb

120

W

Diagnostic Characteristics

Open load detection current

I_L(off)

10

2

30

3

60

4

mA

Open load detection voltage

T_j=-40..150°C:

V_OUT(OL)

V

)

Short circuit current limit for max. duration of 400 ms, prior to shutdown (see t

page 4)

d(SC)

9)

While demagnetizing load inductance, dissipated energy in PROFET is E

=

AS

V_ON(CL)* i_L(t) dt, approx.

V_ON(CL)

V_ON(CL)- V_bb

2

L

1

E

= / * L * I * (

AS

), see diagram page 8

2

10)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse

current I of » 0.3 A at V = -32 V through the logic heats up the device. Time allowed under these

GND

bb

condition is dependent on the size of the heatsink. Reverse I

can be reduced by an additional external

GND

GND-resistor (150 W). Input and Status currents have to be limited (see max. ratings page 2 and circuit page

7).

Infineon Technologies AG

Page 4

1999-02-19

BTS 432 I2

Input and Status Feedback¹¹⁾

Input turn-on threshold voltage

V_IN(T+)

V_IN(T-)

D V_IN(T)

1.5

1.0

--

2.4

--

V

T_j=-40..+150°C:

Input turn-off threshold voltage

Input threshold hysteresis

Off state input current (pin 2)

--

1

0.5

--

V

V_IN= 0.4 V: I

30

mA

IN(off)

On state input current (pin 2)

V_IN= 3.5 V: I

10

25

50

mA

IN(on)

Delay time for status with open load

td(ST OL3)

40

80

--

300

400

ms

after Input neg. slope (see diagram page 12)

Status invalid after positive input slope

t_{d(ST SC)}

200

(short circuit)

T =-40 ... +150°C:

j

Status output (CMOS)

12)

T =-40...+150°C, I_ST= - 50 mA: V_ST(high)

4.4

--

5.1

--

6.5

0.4

V

j

T =-40...+150°C, I_ST= +1.6 mA: V_ST(low)

j

Max. status current for

valid status output,

current source (out): -I_ST

current sink (in) : +I_ST

--

-- 0.25 mA

13)

--

1.6

T =-40...+150°C

j

11)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

12)

13)

V

» V during undervoltage shutdown

St high

No current sink capability during undervoltage shutdown

bb

Infineon Technologies AG

Page 5

1999-02-19

BTS 432 I2

Truth Table

Input-

level

Output

level

Status

432

D2

432

E2/F2

432

I2

H

Normal

operation

Open load

L

H

L

H

14

H

L

H

L

H

L

)

H

L

H

L

H

L

H

L

Short circuit

to GND

Short circuit

L

H

L

H

L

H

L

H

L

H

L

H

L

H

15)

H (L

)

to V

H (L

)

bb

L

Overtem-

perature

Undervoltage

L

16)

H

L

16)

L

H

Overvoltage

L

H

L = "Low" Level

H = "High" Level

Terms

Status output

I

bb

V

Logic

3

I

IN

V

bb

IN

ST

2

I

V

L

ON

OUT

PROFET

I

5

ST

ESD-

ZD

ST

GND

4

V

GND

V

IN

ST

V

1

I

Zener diode: 6.1 V typ., max 5 mA, V

ESD zener diodes are not designed for continuous

current

5 V typ,

Logic

bb

V

GND

OUT

R

GND

Short Circuit detection

Fault Condition: V_ON> 8.3 V typ.; IN high

Input circuit (ESD protection)

+ V

bb

R

I

IN

ESD-

V

ON

ZD ZD

I1

I2

I

OUT

GND

Short circuit

detection

Logic

unit

ZD 6.1 V typ., ESD zener diodes are not designed for

I1

continuous current

14)

15)

16)

Power Transistor off, high impedance

Low resistance short V to output may be detected by no-load-detection

bb

No current sink capability during undervoltage shutdown

Infineon Technologies AG

Page 6

1999-02-19

BTS 432 I2

Inductive and overvoltage output clamp

GND disconnect

+ V

bb

V

Z

3

V

bb

ON

IN

2

OUT

PROFET

5

OUT

ST

4

GND

1

V

bb

IN

ST

V

clamped to 58 V typ.

GND

ON

Overvolt. and reverse batt. protection

Any kind of load. In case of Input=high is V_OUT» V_IN- V_IN(T+)

.

Due to V_GND>0, no V_ST= low signal available.

+ V

bb

GND disconnect with GND pull up

R

bb

V

Z

R

3

IN

V

bb

IN

Logic

2

V

OUT

ST

OUT

R

PROFET

ST

5

GND

PROFET

ST

4

GND

1

R

GND

Signal GND

V

R

= 120 W typ., V +R_bb*40 mA = 67 V typ., add

, R , R for extended protection

V

ST

IN

bb

GND IN ST

Z

GND

bb

Any kind of load. If V_GND> V_IN- V_IN(T+)device stays off

Due to V_GND>0, no V_ST= low signal available.

Open-load detection

V

disconnect with charged inductive

bb

OFF-state diagnostic condition: V_OUT> 3 V typ.; IN low

load

3

V

high

bb

IN

2

OFF

OUT

PROFET

I

5

L(OL)

ST

4

GND

1

Open load

detection

Logic

V

unit

OUT

V

bb

Signal GND

Infineon Technologies AG

Page 7

1999-02-19

BTS 432 I2

Inductive Load switch-off energy

3

dissipation

E

bb

V

high

bb

IN

2

E

AS

OUT

PROFET

5

E

Load

V

ST

bb

4

IN

GND

1

OUT

PROFET

=

ST

E

L

V

bb

GND

E

R

Energy dissipated in PROFET E_AS= E_bb+ E_L- E_R.

2

L

1

E

< E , E = / * L * I

L L 2

Load

Infineon Technologies AG

Page 8

1999-02-19

BTS 432 I2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump and

reverse battery protection , protection against loss of ground

Type

BTS 432D2 432E2 432F2 432I2

Logic version

D

E

F

I

Overtemperature protection

T >150 °C, latch function^{17 18}

X

)

j

X

T >150 °C, with auto-restart on cooling

j

Short-circuit to GND protection

17)

switches off when V >8.3 V typ.

X

ON

(when first turned on after approx. 200 ms)

Open load detection

in OFF-state with sensing current 30 mA typ.

in ON-state with sensing voltage drop across

power transistor

X

Undervoltage shutdown with auto restart

Overvoltage shutdown with auto restart

X

Status feedback for

overtemperature

X

short circuit to GND

X

19)

short to V

open load

-

bb

X

-

X

-

undervoltage

overvoltage

-

Status output type

CMOS

X

Open drain

Output negative voltage transient limit

(fast inductive load switch off)

to V - V

bb

ON(CL)

X

Load current limit

high level (can handle loads with high inrush currents)

medium level

X

low level (better protection of application)

17)

Latch except when V -V

< V

after shutdown. In most cases V

= 0 V after shutdown (V

bb OUT

ON(SC)

OUT OUT

¹ 0 V only if forced externally). So the device remains latched unless V < V

(see page 4). No latch

bb

ON(SC)

between turn on and t

.

d(SC)

18)

19)

With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage

Low resistance short V to output may be detected by no-load-detection

bb

Infineon Technologies AG

Page 9

1999-02-19

BTS 432 I2

Timing diagrams

Figure 2b: Switching an inductive load

Figure 1a: V turn on:

bb

IN

t

d(bb IN)

V

bb

ST

V _OUT

V

OUT

A

ST CMOS

I

L

t

A

t

in case of too early V =high the device may not turn on (curve

IN

A)

t_{d(bb IN)}approx. 150 ms

Figure 3a: Turn on into short circuit,

Figure 2a: Switching a lamp,

IN

ST

V

OUT

V_OUT

t

d(SC)

I

L

I

L

t

approx. 200ms if V_bb- V_OUT> 8.3 V typ.

d(SC)

Infineon Technologies AG

Page 10

1999-02-19

BTS 432 I2

Figure 3b: Turn on into overload,

Figure 4a: Overtemperature,

Reset if (IN=low) and (T <T )

j

jt

IN

I _L

ST

V

I

L(SCp)

I

L(SCr)

OUT

ST

T

J

t

Heating up may require several milliseconds , V_bb- V_OUT< 8.3 V

typ.

*) ST goes high , when V =low and T <T

IN

j

jt

Figure 3c: Short circuit while on:

Figure 5a: Open load: detection in ON-state, open

load occurs in on-state

IN

ST

t

d(OL ST2)

d(ST OL1)

ST

V

V_OUT

OUT

I _L

**)

normal

I

open

L

t

**) current peak approx. 20 ms

t

t_{d(ST OL1)}= tbd ms typ., t_{d(ST OL2)}= tbd ms typ

Infineon Technologies AG

Page 11

1999-02-19

BTS 432 I2

Figure 5b: Open load: detection in OFF-state, turn

Figure 6a: Undervoltage:

on/off to open load

IN

V

bb

t_{d(ST OL3)}

ST

V

bb(u cp)

V

bb(under)

V

bb(u rst)

V_OUT

I

ST CMOS

L

normal

open

t

*)

in case of external capacity t_d(ST,OL3)may be higher due to high

impedance *) I_L= 30 mA typ

Figure 6b: Undervoltage restart of charge pump

V

[V]

ON

V_ON(CL)

V_on

Figure 5c: Open load: detection in OFF-state, open

load occurs in off-state

off

IN

ST

V _bb(over)

off

V

V_{bb(u rst)}

V

bb(o rst)

OUT

bb(u cp)

V _bb(under)

on

open

load

normal

load

I

normal

load

V_bb

L

V

bb

[V]

charge pump starts at V_bb(ucp)=6.5 V typ.

t

*)

*) I_L= 30 mA typ

Infineon Technologies AG

Page 12

1999-02-19

BTS 432 I2

Figure 7a: Overvoltage:

IN

V_ON(CL)

V

bb(over)

bb(o rst)

bb

V_OUT

ST

t

Infineon Technologies AG

Page 13

1999-02-19

BTS 432 I2

Package and Ordering Code

All dimensions in mm

Standard TO-220AB/5

Ordering code

SMD TO-220AB/5, Opt. E3122 Ordering code

BTS 432 I2 E3122A T&R:

Q67060-S6204-A3

BTS 432 I2

Q67060-S6204-A2

Infineon Technologies AG

Page 14

1999-02-19

BTS 432 I2

Published by Infineon Technologies AG

Balanstraße 73, D-81541 München

Attention please!

As far as patents or other rights of third parties are concerned,

liability is only assumed for components, not for applications,

processes and circuits implemented within components or

assemblies. The information describes a type of component and

shall not be considered as warranted characteristics. Terms of

delivery and rights to change design reserved. For questions on

technology, delivery and prices please contact Infineon Offices in

Germany or the Infineon Companies and Representatives

worldwide (see address list). Due to technical requirements

components may contain dangerous substances. For information

on the types in question please contact your nearest Infineon

Office. Infineon Technologies AG is an approved CECC

manufacturer.

Packing: Please use the recycling operators known to you. We

can also help you - get in touch with your nearest sales office. By

agreement we will take packing material back, if it is sorted. You

must bear the costs of transport. For packing material that is

returned to us unsorted or which we are not obliged to accept, we

shall have to invoice you for any costs incurred.

Components used in life-support devices or systems must be

20)

expressly authorised for such purpose! Critical components

of Infineon Technologies AG, may only be used in life supporting

devices or systems²¹⁾with the express written approval of Infineon

Technologies AG.

20)

A critical component is a component used in a life-support

device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to

affect its safety or effectiveness of that device or system.

21)

Life support devices or systems are intended (a) to be

implanted in the human body or (b) support and/or maintain

and sustain and/or protect human life. If they fail, it is

reasonably to assume that the health of the user or other

persons may be endangered.

Infineon Technologies AG

Page 15

1999-02-19

型号:	BTS432D
是否Rohs认证：	不符合
生命周期：	Obsolete
包装说明：	ZIP, ZIP5,.15,.2,67TB
Reach Compliance Code：	unknown
风险等级：	5.89
JESD-30 代码：	R-PZIP-T5
JESD-609代码：	e0
端子数量：	5
封装主体材料：	PLASTIC/EPOXY
封装代码：	ZIP
封装等效代码：	ZIP5,.15,.2,67TB
封装形状：	RECTANGULAR
封装形式：	IN-LINE
电源：	4.5/42 V
认证状态：	Not Qualified
子类别：	MOSFET Drivers
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子节距：	1.7 mm
端子位置：	ZIG-ZAG
Base Number Matches：	1

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