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产品型号BTS640-S2的Datasheet PDF文件预览

®
PROFET BTS 640 S2  
Smart Sense High-Side  
Power Switch  
Features  
Product Summary  
Vbb(on)  
RON  
IL(ISO)  
IL(SCr)  
5.0 ... 34  
30  
V
m  
A
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
Short circuit protection  
12.6  
24  
Current limitation  
Proportional load current sense  
CMOS compatible input  
Open drain diagnostic output  
Fast demagnetization of inductive loads  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
Overload protection  
Thermal shutdown  
Overvoltage protection including load dump (with  
external GND-resistor)  
Reverse battery protection (with external GND-  
resistor)  
A
Package  
TO220-7-11  
TO263-7-2  
TO220-7-12  
1
1
1
Standard (staggered)  
SMD  
Straight  
Loss of ground and loss of V protection  
bb  
Electrostatic discharge (ESD) protection  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology. Fully  
protected by embedded protection functions.  
Block Diagram  
4
+ V  
bb  
Voltage  
source  
Gate  
OvervoltageCurrent  
protection limit  
protection  
V
Logic  
6, 7  
OUT  
Limit for  
unclamped  
ind. loads  
Charge pump  
Level shifter  
Voltage  
sensor  
I
L
Current  
Sense  
Rectifier  
IN  
3
1
Output  
Voltage  
detection  
Load  
Logic  
ESD  
ST  
R
O
Temperature  
sensor  
GND  
IS  
5
I
IS  
PROFET  
GND  
R
IS  
Load GND  
2
Signal GND  
Semiconductor Group  
Page 1 of 14  
2002-Sep-30  
BTS 640 S2  
Pin  
1
Symbol  
ST  
Function  
Diagnostic feedback: open drain, invers to input level  
2
GND  
IN  
Logic ground  
3
Input, activates the power switch in case of logical high signal  
Positive power supply voltage, the tab is shorted to this pin  
4
V
bb  
Sense current output, proportional to the load current, zero in  
the case of current limitation of load current  
5
IS  
6 & 7  
OUT  
(Load, L)  
Output, protected high-side power output to the load.  
Both output pins have to be connected in parallel for operation  
according this spec (e.g. kILIS).  
Design the wiring for the max. short circuit current  
Maximum Ratings at Tj = 25 °C unless otherwise specified  
Parameter  
Symbol  
Vbb  
Vbb  
Values  
Unit  
V
Supply voltage (overvoltage protection see page 4)  
43  
34  
Supply voltage for full short circuit protection  
V
T
=-40 ...+150°C  
j Start  
3)  
Load dump protection1)  
V
= V + V , V = 13.5V  
VLoad dump  
60  
V
LoadDump  
A
s
A
2)  
R
= 2 , R = 1 , t = 200 ms, IN= low or high  
I
L d  
Load current (Short circuit current, see page 5)  
IL  
self-limited  
A
Operating temperature range  
Storage temperature range  
Tj  
Tstg  
-40 ...+150  
-55 ...+150  
°C  
Power dissipation (DC), T 25 °C  
Ptot  
85  
W
C
Inductive load switch-off energy dissipation, single pulse  
V
= 12V, T = 150°C, T = 150°C const.  
j,start C  
bb  
IL = 12.6 A, ZL = 4,2mH, 0 : EAS  
0,41  
3,5  
J
IL = 4 A, ZL = 330mH, 0 : EAS  
Electrostatic discharge capability (ESD)  
IN: VESD  
ST, IS:  
1.0  
4.0  
8.0  
kV  
(Human Body Model)  
out to all other pins shorted:  
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993  
R=1.5k; C=100pF  
Input voltage (DC)  
VIN  
-10 ... +16  
V
Current through input pin (DC)  
Current through status pin (DC)  
Current through current sense pin (DC)  
see internal circuit diagrams page 9  
IIN  
IST  
IIS  
2.0  
5.0  
14  
mA  
1)  
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω  
resistor in the GND connection is recommended).  
2)  
3)  
R = internal resistance of the load dump test pulse generator  
VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839  
I
Semiconductor Group  
Page 2  
2002-Sep-30  
BTS 640 S2  
Thermal Characteristics  
Parameter and Conditions  
Symbol  
chip - case: RthJC  
Values  
typ  
-- 1.47  
Unit  
min  
--  
max  
Thermal resistance  
K/W  
junction - ambient (free air): RthJA  
SMD version, device on PCB4):  
--  
--  
--  
33  
75  
--  
Electrical Characteristics  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Load Switching Capabilities and Characteristics  
On-state resistance (pin 4 to 6&7)  
I = 5 A  
T=25 °C: RON  
T=150 °C:  
j
--  
--  
27  
54  
30  
60  
mΩ  
L
j
Output voltage drop limitation at small load  
currents (pin 4 to 6&7), see page 15  
I = 0.5 A  
L
VON(NL)  
50  
-- mV  
T =-40...+150°C:  
j
Nominal load current, ISO Norm (pin 4 to 6&7)  
V
= 0.5 V, T = 85 °C  
IL(ISO)  
11.4 12.6  
--  
A
ON  
C
Nominal load current, device on PCB4)  
T = 85 °C, T 150 °C V  
ON  
0.5 V,  
IL(NOM)  
IL(GNDhigh)  
4.0  
--  
4.5  
--  
--  
8
A
mA  
A
j
Output current (pin 6&7) while GND disconnected  
or GND pulled up, V =30 V, V = 0, see diagram page  
bb  
IN  
10; not tested, specified by design  
Turn-on time  
Turn-off time  
IN  
IN  
to 90% V  
to 10% V  
: ton  
: toff  
25  
25  
70  
80  
150  
200  
µs  
OUT  
OUT  
R = 12 , T =-40...+150°C  
L
j
Slew rate on  
dV /dton  
-dV/dtoff  
0.1  
0.1  
--  
--  
1 V/µs  
1 V/µs  
10 to 30% V  
OUT  
, R = 12 , T =-40...+150°C  
L j  
Slew rate off  
70 to 40% V  
OUT  
, R = 12 , T =-40...+150°C  
L j  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V  
connection. PCB is vertical without blown air.  
4)  
bb  
Semiconductor Group  
Page 3  
2002-Sep-30  
BTS 640 S2  
Parameter and Conditions  
Symbol  
Values  
typ max  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
Operating Parameters  
Operating voltage 5)  
Undervoltage shutdown  
Undervoltage restart  
T =-40...+150°C: Vbb(on)  
5.0  
3.2  
--  
--  
--  
4.5  
34  
5.0  
5.5  
6.0  
V
V
V
j
T =-40...+150°C: Vbb(under)  
j
T =-40...+25°C: Vbb(u rst)  
j
T =+150°C:  
j
Undervoltage restart of charge pump  
see diagram page 14  
T =-40...+25°C: Vbb(ucp)  
--  
--  
--  
4.7  
--  
0.5  
6.5  
7.0  
--  
V
V
j
T =25...150°C:  
j
Undervoltage hysteresis  
Vbb(under)  
V  
= V  
- V  
bb(under)  
bb(u rst) bb(under)  
Overvoltage shutdown  
Overvoltage restart  
T =-40...+150°C: Vbb(over)  
34  
33  
--  
41  
43  
--  
--  
1
--  
47  
43  
--  
--  
--  
52  
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)  
j
Overvoltage hysteresis  
Overvoltage protection6)  
T =-40...+150°C: Vbb(over)  
j
T =-40°C: Vbb(AZ)  
j
I =40 mA  
bb  
T =+25...+150°C  
j
Standby current (pin 4)  
V
=0  
Tj=-40...+25°C: Ibb(off)  
Tj= 150°C:  
--  
--  
4
12  
15 µA  
IN  
25  
IL(off)  
--  
--  
10 µA  
Off state output current (included in Ibb(off)  
)
,
=-40...+150°C  
:
VIN=0  
Tj  
7)  
IGND  
--  
1.2  
3
mA  
Operating current (Pin 2) , V =5 V  
IN  
5)  
6)  
At supply voltage increase up to V = 4.7 V typ without charge pump, V  
V - 2 V  
bb  
OUT  
bb  
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω  
resistor in the GND connection is recommended). See also V  
in table of protection functions and  
ON(CL)  
circuit diagram page 10.  
7)  
Add I , if I > 0, add I , if V >5.5 V  
ST  
ST  
IN  
IN  
Semiconductor Group  
Page 4  
2002-Sep-30  
BTS 640 S2  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Protection Functions  
Initial peak short circuit current limit (pin 4 to 6&7)  
IL(SCp)  
Tj =-40°C:  
48  
40  
31  
56  
50  
37  
65  
58  
45  
A
Tj =25°C:  
Tj =+150°C:  
Repetitive short circuit shutdown current limit  
IL(SCr)  
T = T (see timing diagrams, page 13)  
jt  
--  
24  
--  
A
V
j
Output clamp (inductive load switch off)  
at V = V - V ; I = 40 mA,  
T =-40°C: VON(CL)  
41  
43  
--  
47  
--  
52  
OUT bb ON(CL) L  
j
Tj =+25..+150°C:  
Thermal overload trip temperature  
Thermal hysteresis  
Tjt  
Tjt  
-Vbb  
150  
--  
--  
10  
--  
--  
--  
32  
°C  
K
V
8)  
Reverse battery (pin 4 to 2)  
--  
Reverse battery voltage drop (V  
L
> V )  
bb  
out  
I = -5 A  
T=150 °C: -VON(rev)  
--  
600  
-- mV  
j
Diagnostic Characteristics  
Current sense ratio9), static on-condition,  
10)  
= 6.5 ...27V,  
bb(on)  
V
k
= 0...5 V, V  
= I / I  
IS  
ILIS  
Tj = -40°C, IL = 5 A:  
kILIS  
4550 5000 6000  
3300 5000 8000  
L
IS  
Tj= -40°C, IL= 0.5 A:  
Tj= 25...+150°C, IL= 5 A:  
Tj= 25...+150°C, IL = 0.5 A:  
4550 5000 5550  
4000 5000 6500  
,
Current sense output voltage limitation  
T = -40 ...+150°C  
I
= 0, I = 5 A:  
j
IS L  
VIS(lim)  
5.4  
0
6.1  
--  
6.9  
1
V
Current sense leakage/offset current  
T = -40 ...+150°C  
j
V =0, V = 0, I = 0:  
IN IS  
L
IIS(LL)  
µA  
8)  
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source  
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal  
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature  
protection is not active during reverse current operation! Input and Status currents have to be limited (see  
max. ratings page 2 and circuit page 10).  
This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by  
a factor of two by matching the value of kILIS for every single device.  
9)  
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is  
High. See figure 2b, page 12.  
Valid if Vbb(u rst) was exceeded before.  
10)  
Semiconductor Group  
Page 5  
2002-Sep-30  
BTS 640 S2  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
IIS(LH)  
IIS(SH)  
0
0
--  
--  
15  
10  
V =5 V, V = 0, I = 0:  
IN IS  
L
V =5 V, V = 0, V  
= 0 (short circuit)  
IN  
IS  
OUT  
:
(I  
not tested, specified by design)  
IS(SH)  
Current sense settling time to IIS static 10% after  
tson(IS)  
--  
--  
--  
300  
100  
positive input slope, I = 0  
j
5 A,  
µs  
µs  
L
T = -40...+150°C (not tested, specified by design)  
Current sense settling time to 10% of IIS static after  
negative input slope, I = 5  
j
0 A ,  
tsoff(IS)  
30  
L
T = -40...+150°C (not tested, specified by design)  
Current sense rise time (60% to 90%) after change  
of load current I = 2.5  
5 A (not tested, specified tslc(IS)  
--  
2
10  
3
--  
4
µs  
L
by design)  
Open load detection voltage11) (off-condition)  
VOUT(OL)  
V
T =-40..150°C:  
j
Internal output pull down  
(pin 6 to 2), V  
OUT  
=5 V, T =-40..150°C  
RO  
5
15  
40  
kΩ  
j
Input and Status Feedback12)  
Input resistance  
see circuit page 9  
RI  
3,0  
4,5  
7,0  
kΩ  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input threshold hysteresis  
T =-40..+150°C: VIN(T+)  
--  
1.5  
--  
--  
--  
0.5  
3.5  
--  
--  
V
V
V
j
T =-40..+150°C: VIN(T-)  
j
VIN(T)  
Off state input current (pin 3), V = 0.4 V  
IN  
IIN(off)  
1
--  
50  
90  
µA  
µA  
T =-40..+150°C  
j
On state input current (pin 3), V = 5 V  
IN  
IIN(on)  
20  
50  
T =-40..+150°C  
j
Delay time for status with open load  
after Input neg. slope (see diagram page 14)  
td(ST OL3)  
tdon(ST)  
tdoff(ST)  
--  
--  
--  
400  
13  
1
--  
--  
--  
µs  
µs  
µs  
Status delay after positive input slope (not tested,  
specified by design)  
T =-40 ... +150°C:  
j
Status delay after negative input slope (not tested,  
specified by design)  
T =-40 ... +150°C:  
j
11)  
12)  
External pull up resistor required for open load detection in off state.  
If a ground resistor R  
is used, add the voltage drop across this resistor.  
GND  
Semiconductor Group  
Page 6  
2002-Sep-30  
BTS 640 S2  
Parameter and Conditions  
Symbol  
Values  
Unit  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
5.4  
typ  
max  
Status output (open drain)  
Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)  
6.1  
6.9  
V
j
--  
--  
--  
--  
0.4  
0.7  
ST low voltage  
T =-40...+25°C, IST = +1.6 mA: VST(low)  
j
T = +150°C, IST = +1.6 mA:  
j
Status leakage current, V = 5 V,  
T =25 ... +150°C: IST(high)  
j
--  
--  
2
µA  
ST  
Semiconductor Group  
Page 7  
2002-Sep-30  
BTS 640 S2  
Truth Table  
Input  
level  
Output  
level  
Status  
level  
Current  
Sense  
I
IS  
Normal  
L
H
L
H
L
L
H
L
H
L
H
L
H
H
H
H
0
operation  
Current-  
limitation  
Short circuit to  
GND  
nominal  
0
0
0
0
13  
H
)
L
Over-  
temperature  
Short circuit to  
L
H
L
H
L
L
L
H
H
H
H
L
0
0
0
14)  
15)  
V
bb  
L
<nominal  
16  
17)  
Open load  
0
0
)
L
H (L  
L
)
H
H
L
L
L
L
L
Undervoltage  
Overvoltage  
L
H
L
H
L
H
L
H
L
0
0
0
0
0
Negative output  
voltage clamp  
H
L = "Low" Level  
H = "High" Level  
X = don't care  
Z = high impedance, potential depends on external circuit  
Status signal after the time delay shown in the diagrams (see fig 5. page 13...14)  
13)  
The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is  
zero  
14)  
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND  
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.  
15)  
16)  
17)  
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.  
Power Transistor off, high impedance  
with external resistor between pin 4 and pin 6&7  
Semiconductor Group  
Page 8  
2002-Sep-30  
BTS 640 S2  
Status output  
Terms  
+5V  
ST  
I
bb  
V
V
4
bb  
ON  
RST(ON)  
I
IN  
I
V
3
bb  
I
L
IN  
6
7
OUT  
OUT  
ST  
PROFET  
ST  
1
5
ESD-  
ZD  
I
IS  
IS  
V
V
GND  
2
IN  
ST  
V
GND  
V
IS  
OUT  
I
GND  
R
ESD-Zener diode: 6.1 V typ., max 5 mA;  
GND  
R
< 440 at 1.6 mA, The use of ESD zener  
ST(ON)  
diodes as voltage clamp at DC conditions is not  
recommended.  
Input circuit (ESD protection)  
R
Current sense output  
I
IN  
V
IS  
IS  
ESD-ZDI  
I
I
I
IS  
GND  
R
IS  
ESD-ZD  
GND  
The use of ESD zener diodes as voltage clamp at DC  
conditions is not recommended.  
ESD-Zener diode: 6.1 V typ., max 14 mA;  
= 1 knominal  
R
IS  
Inductive and overvoltage output clamp  
+ V  
bb  
V
Z
VON  
OUT  
PROFET  
GND  
V
ON  
clamped to 47 V typ.  
Semiconductor Group  
Page 9  
2002-Sep-30  
BTS 640 S2  
Overvoltage protection of logic part  
GND disconnect  
+ 5V  
+ V  
I
bb  
bb  
V
4
bb  
R
ST  
V
V
3
bb  
Z2  
R
IN  
I
6
IN  
OUT  
OUT  
1
ST  
PROFET  
ST  
Logic  
7
IS  
5
IS  
R
V
GND  
2
V
Z1  
R
V
V
V
V
IS  
IN  
ST  
GND  
IS  
GND  
R
GND  
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+)  
.
Signal GND  
Due to VGND >0, no VST = low signal available.  
V
R
= 6.1 V typ., V = 47 V typ., R = 4 ktyp,  
Z2 I  
Z1  
GND disconnect with GND pull up  
= 150 Ω, R = 15 k, R = 1 k, R = 15 k,  
GND  
ST  
IS  
V
4
V
3
1
5
bb  
Reverse battery protection  
IN  
ST  
IS  
6
7
+ 5V  
OUT  
OUT  
PROFET  
V
-
bb  
RST  
GND  
2
RI  
Logic  
VZ1  
IN  
ST  
IS  
OUT  
V
V
V
V
ST  
IN  
IS  
GND  
Power  
Inverse  
Diode  
V
RV  
RIS  
bb  
Any kind of load. If VGND > VIN - VIN(T+) device stays off  
Due to VGND >0, no VST = low signal available.  
GND  
RL  
RGND  
V
disconnect with energized inductive  
bb  
load  
Power GND  
Signal GND  
The load R is inverse on, temperature protection is not  
active  
L
4
V
high  
3
1
bb  
R
= 150 Ω, R = 4 ktyp, R 500 , R 200 ,  
GND  
V
IN  
ST  
IS  
I
ST  
IS  
6
7
OUT  
OUT  
R 500 ,  
PROFET  
5
GND  
2
Open-load detection  
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low  
V
bb  
V
bb  
R
EXT  
Normal load current can be handled by the PROFET  
itself.  
OFF  
V
Out  
OUT  
ST  
Logic  
R
O
Signal GND  
Semiconductor Group  
Page 10  
2002-Sep-30  
BTS 640 S2  
V
disconnect with charged external  
bb  
inductive load  
4
V
high  
3
1
bb  
IN  
ST  
IS  
6
7
OUT  
OUT  
PROFET  
D
5
GND  
2
R
L
L
V
bb  
If other external inductive loads L are connected to the PROFET,  
additional elements like D are necessary.  
Inductive Load switch-off energy  
dissipation  
E
bb  
E
AS  
4
E
E
Load  
L
V
bb  
3
IN  
6
7
OUT  
OUT  
1
5
ST  
IS  
PROFET  
=
V
GND  
2
bb  
E
R
Energy stored in load inductance:  
2
L
1
E = / ·L·I  
L
2
While demagnetizing load inductance, the energy  
dissipated in PROFET is  
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,  
with an approximate solution for RL > 0:  
IL·L  
2·RL  
IL·RL  
|VOUT(CL)|  
E =  
AS  
·(Vbb +|VOUT(CL)|)· ln (1+  
)
Semiconductor Group  
Page 11  
2002-Sep-30  
BTS 640 S2  
Timing diagrams  
Figure 1a: Switching a resistive load,  
change of load current in on-condition:  
Figure 2a: Switching a lamp  
IN  
IN  
ST  
ST  
t
don(ST)  
t
doff(ST)  
V
V
OUT  
OUT  
t
on  
t
off  
t
t
I
I
slc(IS)  
slc(IS)  
I
L
L
Load 1  
Load 2  
I
IS  
IS  
t
t
son(IS)  
t
t
soff(IS)  
The sense signal is not valid during settling time after turn or  
change of load current.  
Figure 2b: Switching a lamp with current limit:  
IN  
Figure 1b: V turn on:  
bb  
IN  
ST  
V
bb  
V
OUT  
I
L
I
L
I
IS  
I
IS  
t
ST  
t
proper turn on under all conditions  
Semiconductor Group  
Page 12  
2002-Sep-30  
BTS 640 S2  
Figure 4a: Overtemperature:  
Figure 2c: Switching an inductive load:  
Reset if T <T  
j
jt  
IN  
IN  
ST  
ST  
V
OUT  
I
L
I
L
I
IS  
I
T
IS  
J
t
t
Figure 3a: Short circuit:  
shut down by overtempertature, reset by cooling  
Figure 5a: Open load: detection in ON-state,  
open load occurs in on-state  
IN  
IN  
I
I
L(SCp)  
L
I
ST  
L(SCr)  
V
OUT  
I
IS  
I
L
normal  
open  
normal  
ST  
t
I
IS  
Heating up may require several milliseconds, depending on  
external conditions  
t
I
L(SCp) = 50 A typ. increases with decreasing temperature.  
Semiconductor Group  
Page 13  
2002-Sep-30  
BTS 640 S2  
Figure 6b: Undervoltage restart of charge pump  
Figure 5b: Open load: detection in ON- and OFF-state  
(with R  
), turn on/off to open load  
EXT  
V
ON(CL)  
V
on  
IN  
t
d(ST OL3)  
ST  
V
V
bb(over)  
OUT  
V
V
bb(o rst)  
bb(u rst)  
V
I
L
bb(u cp)  
open load  
V
bb(under)  
V
bb  
I
IS  
t
charge pump starts at Vbb(ucp) =4.7 V typ.  
Figure 7a: Overvoltage:  
Figure 6a: Undervoltage:  
IN  
IN  
ST  
not defined  
ST  
V
V
V
bb  
ON(CL)  
V
bb(over)  
bb(o rst)  
V
bb  
V
bb(u cp)  
V
bb(under)  
V
bb(u rst)  
I
L
I
L
I
IS  
I
IS  
t
t
Semiconductor Group  
Page 14  
2002-Sep-30  
BTS 640 S2  
18  
Figure 8b: Current sense ratio :  
Figure 8a: Current sense versus load current:  
15000  
k
ILIS  
1.3  
[mA]  
1.2  
I
IS  
1.1  
1
10000  
5000  
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
I
[A]  
L
I
L
0
1 2 3 4 5 6 7 8 9 10 11 12 13  
[A]  
0
1
2
3
4
5
6
Figure 9a: Output voltage drop versus load current:  
V
[V]  
ON  
0.2  
R
ON  
0.1  
0.0  
V
ON(NL)  
I
L
[A]  
0
1
2
3
4
5
6
7
8
18  
This range for the current sense ratio refers to all  
devices. The accuracy of the kILIS can be raised at  
least by a factor of two by matching the value of  
kILIS for every single device.  
Semiconductor Group  
Page 15  
2002-Sep-30  
BTS 640 S2  
Package and Ordering Code  
All dimensions in mm  
Straight: P-TO220-7-12  
Sales Code  
Standard (=staggered): P-TO220-7-11  
BTS640S2 S  
Sales code  
BTS640S2  
Ordering code  
Q67060-S6307-A7  
Ordering code  
Q67060-S6307-A5  
0.2  
10  
A
±±02  
.±  
0.15  
9.8  
A
±±0.1  
9.8  
8.51)  
4.4  
B
801.)  
404  
3.7-0.15  
1.27 0.1  
ꢀ07-±0.1  
.027±±0.  
0.05  
±0±1  
C
C
0.5 0.1  
±±0.  
±01  
±000±0.1  
7x  
0...0.15  
1.27  
2.4  
7x  
0.6 0.1  
204  
±06 ±±0.  
3.9 0.4  
.027  
M
0.25  
A B C  
8.4 0.4  
M
0.25  
A C  
.)  
Typical  
All metal surfaces tin plated, except area of cut0  
1)  
Typical  
All metal surfaces tin plated, except area of cut.  
Published by Siemens AG, Bereich Bauelemente, Vertrieb,  
Produkt-Information, Balanstraße 73, D-81541 München  
Siemens AG 2002. All Rights Reserved  
As far as patents or other rights of third parties are concerned,  
liability is only assumed for components per se, not for applications,  
processes and circuits implemented within components or assem-  
blies. The information describes a type of component and shall not  
be considered as warranted characteristics. The characteristics for  
which SIEMENS grants a warranty will only be specified in the  
purchase contract. Terms of delivery and rights to change design  
reserved. For questions on technology, delivery and prices please  
contact the Offices of Semiconductor Group in Germany or the  
Siemens Companies and Representatives woldwide (see address  
list). Due to technical requirements components may contain dan-  
gerous substances. For information on the type in question please  
contact your nearest Siemens Office, Semiconductor Group.  
Siemens AG is an approved CECC manufacturer.  
SMD: P-TO263-7-2  
(tape&reel)  
Sales code  
BTS640S2 G  
0.2  
10  
4.4  
0.15  
9.8  
0.1  
1.27  
B
A
8.5 1)  
0.1  
0.05  
2.4  
Packing: Please use the recycling operators known to you. We can  
also help you - get in touch with your nearest sales office. By  
agreement we will take packing material back, if it is sorted. You  
must bear the costs of transport. For packing material that is re-  
turned to us unsorted or which we are not obliged to accept we shall  
have to invoice you for any costs incurred.  
0...0.15  
6x1.27  
7x0.6 0.1  
0.5 0.1  
Components used in life-support devices or systems must be  
8˚ max.  
M
19)  
0.25  
A
B
0.1  
expressly authorised for such purpose! Critical components  
of the Semiconductor Group of Siemens AG, may only be used in  
life supporting devices or systems20) with the express written  
approval of the Semiconductor Group of Siemens AG.  
1)  
Typical  
All metal surfaces tin plated, except area of cut.  
Ordering code  
Q67060-S6307-A6  
19)  
A critical component is a component used in a life-support  
device or system whose failure can reasonably be expected to  
cause the failure of that life-support device or system, or to  
affect its safety or effectiveness of that device or system.  
20)  
Life support devices or systems are intended (a) to be  
implanted in the human body or (b) support and/or maintain  
and sustain and/or protect human life. If they fail, it is  
reasonably to assume that the health of the user or other  
persons may be endangered.  
Semiconductor Group  
Page 16  
2002-Sep-30  
配单直通车
BTS640E3128A产品参数
型号:BTS640E3128A
生命周期:Obsolete
IHS 制造商:INFINEON TECHNOLOGIES AG
包装说明:,
Reach Compliance Code:compliant
风险等级:5.68
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