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产品型号BUT11AFTU的Datasheet PDF文件预览

BUT11F/11AF  
High Voltage Power Switching Applications  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
CBO  
: BUT11F  
: BUT11AF  
850  
1000  
V
V
CEO  
: BUT11F  
: BUT11AF  
400  
450  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
9
V
A
EBO  
I
I
I
I
5
C
*Collector Current (Pulse)  
Base Current (DC)  
10  
A
CP  
B
2
A
*Base Current (Pulse)  
4
40  
A
BP  
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BUT11F  
: BUT11AF  
I
= 100mA, I = 0  
400  
450  
V
V
C
B
I
I
Collector Cut-off Current  
: BUT11F  
CES  
V
V
= 850V, V = 0  
1
1
mA  
mA  
CE  
CE  
BE  
: BUT11AF  
= 1000V, V = 0  
BE  
Emitter Cut-off Current  
V
= 9V, I = 0  
10  
mA  
EBO  
BE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
: BUT11F  
CE  
I
I
= 3A, I = 0.6A  
= 2.5A, I = 0.5A  
B
1.5  
1.5  
V
V
C
C
B
: BUT11AF  
V
(sat)  
Base-Emitter Saturation Voltage  
: BUT11F  
BE  
I
I
= 3A, I = 0.6A  
= 2.5A, I = 0.5A  
B
1.3  
1.3  
V
V
C
C
B
: BUT11AF  
t
t
Turn On Time  
Storage Time  
Fall Time  
V
= 250V, I = 2.5A  
1
4
µs  
µs  
µs  
ON  
CC  
C
I
= -I = 0.5A  
B1  
B2  
STG  
F
R = 100Ω  
L
t
0.8  
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Typ  
Max  
3.125  
Units  
R
Thermal Resistance, Junction to Case  
°C/W  
θjC  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, August 2001  
Typical Characteristics  
1000  
10  
VCE = 5V  
IC = 5 IB  
100  
10  
1
1
0.1  
VCE(sat)  
0.01  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
10  
8
10  
IC = 5 IB  
VBE(sat)  
1
6
4
0.1  
2
BUT11AF  
1000 1200  
BUT11F  
0.01  
0.01  
0
0.1  
1
10  
0
200  
400  
600  
800  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Figure 4. Reverse Biased Safe Operating Area  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
Ic MAX (Continuous)  
1
0.1  
BUT11AF  
BUT11F  
0.01  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
1000  
TC[OC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 6. Power Derating  
Figure 5. Safe Operating Area  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, August 2001  
Package Demensions  
TO-220F  
2.54 ±0.20  
10.16 ±0.20  
(7.00)  
ø3.18 ±0.10  
(0.70)  
(1.00x45°)  
MAX1.47  
0.80 ±0.10  
(30  
°
)
#1  
0.35 ±0.10  
+0.10  
–0.05  
0.50  
2.76 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
9.40 ±0.20  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, August 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
POP™  
STAR*POWER™  
Stealth™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
UHC™  
Power247™  
PowerTrench®  
QFET™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
UltraFET®  
VCX™  
FACT™  
FACT Quiet Series™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H3  
配单直通车
BUT11AI产品参数
型号:BUT11AI
是否Rohs认证: 符合
生命周期:Obsolete
零件包装代码:TO-220AB
包装说明:PLASTIC PACKAGE-3
针数:3
Reach Compliance Code:unknown
风险等级:5.63
外壳连接:COLLECTOR
最大集电极电流 (IC):5 A
集电极-发射极最大电压:450 V
配置:SINGLE
最小直流电流增益 (hFE):14
JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
功耗环境最大值:100 W
最大功率耗散 (Abs):100 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
最大关闭时间(toff):4800 ns
最大开启时间(吨):1000 ns
VCEsat-Max:1.5 V
Base Number Matches:1
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