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产品型号BUV26G的Datasheet PDF文件预览

BUV26  
Switchmode Series NPN  
Silicon Power Transistor  
Designed for high−speed applications.  
Features  
http://onsemi.com  
Switchmode Power Supplies  
High Frequency Converters  
Relay Drivers  
12 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
90 VOLTS, 85 WATTS  
Driver  
Pb−Free Package is Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
90  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO(sus)  
V
V
180  
7.0  
CBO  
EBO  
Collector Current − Continuous  
Collector Current − Peak (pw 10 ms)  
I
20  
30  
Adc  
Apk  
C
TO−220  
CASE 221A  
STYLE 1  
I
CM  
BUV26G  
AYWW  
Base Current − Continuous  
I
4.0  
6.0  
Adc  
Adc  
B
I
BM  
1
Total Power Dissipation @ T = 25°C  
P
D
P
D
85  
65  
W
W
C
2
Total Power Dissipation @ T = 60°C  
C
3
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
BUV26 = Device Code  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Case  
R
1.76  
°C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BUV26  
TO−220  
50 Units/Rail  
50 Units/Rail  
TO−220  
(Pb−Free)  
BUV26G  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 1  
BUV26/D  
BUV26  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage  
V
Vdc  
mAdc  
V
CEO(sus)  
(I = 200 mA, I = 0, L = 25 mH)  
90  
C
B
Collector Cutoff Current at Reverse Bias  
I
CEX  
(V = 180 V, V = −1.5 V, T = 125°C)  
1.0  
30  
CE  
BE  
C
Emitter Base Reverse Voltage  
(I = 50 mA)  
E
V
EBO  
EBO  
CER  
7.0  
Emitter Cutoff Current  
(V = 5.0 V)  
EB  
I
I
mAdc  
mAdc  
1.0  
3.0  
Collector Cutoff Current  
(V = 180 V, R = 50 W, T = 125°C)  
CE  
BE  
C
ON CHARACTERISTICS  
Collector−Emitter Saturation Voltage  
(I = 6.0 A, I = 0.4 A)  
V
V
Vdc  
Vdc  
CE(sat)  
0.6  
1.5  
C
B
(I = 12 A, I = 1.2 A)  
C
B
Base−Emitter Saturation Voltage  
(I = 12 A, I = 1.2 A)  
BE(sat)  
2.0  
C
B
SWITCHING CHARACTERISTICS (Resistive Load)  
Turn On Time  
Storage Time  
Fall Time  
I
= 12 A, I = 1.2 A  
t
on  
0.6  
1.0  
ms  
ms  
C
B
V
= 50 V, V = 6.0 V  
t
s
CC  
BE  
RB2 = 2.5 W  
t
f
0.15  
SWITCHING CHARACTERISTICS (Inductive Load)  
Storage Time  
Fall Time  
V
= 50 V, I = 12 A  
T
s
2.0  
.15  
CC  
C
I
= 1.2 A, V = 5.0 V  
B(end)  
B
T
f
L
= 0.5 pH, T = 125°C  
B
J
1. Pulse Test: Pulse width p 300 ms; Duty cycle p 2%.  
http://onsemi.com  
2
BUV26  
PACKAGE DIMENSIONS  
TO−220  
CASE 221A−07  
ISSUE AA  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEATING  
PLANE  
−T−  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
B
F
C
T
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
−−−  
MAX  
15.75  
10.28  
4.82  
0.88  
3.73  
2.66  
3.93  
0.55  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
−−−  
4
3
A
B
C
D
F
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
−−−  
0.620  
0.405  
0.190  
0.035  
0.147  
0.105  
0.155  
0.022  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
−−−  
Q
A
K
1
2
U
H
G
H
J
Z
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080  
2.04  
N
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BUV26/D  
配单直通车
BUV26G产品参数
型号:BUV26G
Brand Name:ON Semiconductor
是否无铅: 不含铅
生命周期:End Of Life
IHS 制造商:ON SEMICONDUCTOR
零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3
制造商包装代码:221A-09
Reach Compliance Code:not_compliant
ECCN代码:EAR99
风险等级:6.3
外壳连接:COLLECTOR
最大集电极电流 (IC):20 A
集电极-发射极最大电压:90 V
配置:SINGLE
JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3
JESD-609代码:e3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260
极性/信道类型:NPN
最大功率耗散 (Abs):85 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:NO
端子面层:Tin (Sn)
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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