BUZ78供应商报价哪里找芯片批发报价原理和应用中文资料-中国IC网-芯三七

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产品型号BUZ78的概述

芯片BUZ78的概述 BUZ78是一款广泛应用于电子工程领域的功率MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor），其具有较高的开关速度和良好的导通能力。BUZ78广泛应用于各种电源管理和调节电路中，例如直流电机驱动器、开关电源、音频放大器等。BUZ78的设计以其优良的性能和高可靠性著称，使其在现代电子设备中得到了广泛的应用。芯片BUZ78的详细参数 BUZ78的具体参数如下： 1. 最大漏源电压 (V_DS): 60V 2. 最大连续漏电流 (I_D): 25A 3. 最大脉冲漏电流 (I_DM): 50A 4. 最大寄生电容 (Ciss): 1500pF 5. 最大开关频率: 以其构造，BUZ78可以在较高频率下工作，但需根据实际电路要求选择合适的频率。 6. 最大结温 (T_j): 150°C 7. 导通电阻 (...

产品型号BUZ78的Datasheet PDF文件预览

BUZ 78

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

)

DS(on

Package

Ordering Code

BUZ 78

800 V

1.5 A

8 Ω

TO-220 AB

C67078-S1318-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 25 °C

1.5

Pulsed drain current

Dpuls

T = 25 °C

Avalanche current,limited by T

1.5

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

I = 1.5 A, V = 50 V, R = 25 Ω

L = 142 mH, T = 25 °C

170

Gate source voltage

Power dissipation

tot

T = 25 °C

Operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Thermal resistance, chip case

≤ 3.1

K/W

thJC

thJA

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Semiconductor Group

07/96

BUZ 78

Electrical Characteristics, at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Static Characteristics

Drain- source breakdown voltage

(BR)DSS

GS(th)

DSS

= 0 V, I = 0.25 mA, T = 25 °C

800

2.1

Gate threshold voltage

I = 1 mA

GS DS, D

Zero gate voltage drain current

µA

= 800 V, V = 0 V, T = 25 °C

0.1

= 800 V, V = 0 V, T = 125 °C

100

Gate-source leakage current

= 20 V, V = 0 V

GSS

100

Drain-Source on-resistance

= 10 V, I = 1 A

Ω

DS(on)

6.5

Semiconductor Group

07/96

BUZ 78

Electrical Characteristics, at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Dynamic Characteristics

Transconductance

≥

2 I

R I = 1 A

1.35

320

* D * DS(on)max, D

Input capacitance

= 0 V, V = 25 V, f = 1 MHz

iss

oss

430

Output capacitance

= 0 V, V = 25 V, f = 1 MHz

Reverse transfer capacitance

= 0 V, V = 25 V, f = 1 MHz

rss

Turn-on delay time

= 30 V, V = 10 V, I = 1.7 A

d(on)

Ω

= 50

Rise time

= 30 V, V = 10 V, I = 1.7 A

Ω

= 50

Turn-off delay time

= 30 V, V = 10 V, I = 1.7 A

d(off)

Ω

= 50

Fall time

= 30 V, V = 10 V, I = 1.7 A

Ω

= 50

Semiconductor Group

07/96

BUZ 78

Electrical Characteristics, at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Reverse Diode

Inverse diode continuous forward current I

T = 25 °C

1.5

Inverse diode direct current,pulsed

T = 25 °C

Inverse diode forward voltage

= 0 V, I = 3 A

0.95

370

2.1

1.45

Reverse recovery time

V = 100 V, I =l di /dt = 100 A/µs

µC

F S,

Reverse recovery charge

V = 100 V, I l di /dt = 100 A/µs

F S,

Semiconductor Group

07/96

BUZ 78

Drain current

Power dissipation

I = (T )

= (T )

tot

≥

parameter: V

10 V

1.6

I_D

P_tot

1.2

1.0

0.8

0.6

0.4

0.2

0.0

80 100 120

°C 160

T_C

80 100 120

°C 160

T_C

Safe operating area

Transient thermal impedance

I = (V

)

= (t )

th JC

parameter: D = 0.01, T = 25°C

parameter: D = t / T

10 ¹

= 21.0µs

K/W

100 µs

I_D

Z_thJC

10 ⁰

1 ms

10 ^-1

D = 0.50

0.20

10 ms

10 ^-1

0.10

0.05

10 ^-2

0.02

0.01

single pulse

10 ^-2

10 ^-3

10 ⁰

10 ¹

10 ²

V 10 ³

V_DS

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-210 ^-1s 10 ⁰

t_p

07/96

Semiconductor Group

BUZ 78

Typ. output characteristics

ƒ(

Typ. drain-source on-resistance

ƒ(

I =

)

I )

DS (on)

parameter: t = 80 µs

parameter: V

3.4

_tot= 40W

Ω

[V]

2.8

4.0

I_D

R_{DS (on)}

4.5

5.0

2.4

2.0

1.6

1.2

0.8

5.5

6.0

6.5

7.0

7.5

8.0

9.0

10.0

20.0

[V] =

0.4

0.0

4.05 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0

0.0

0.4 0.8

1.2 1.6

2.0 2.4

3.2

V_DS

I_D

Typ. transfer characteristics I = f (V

)

Typ. forward transconductance g = f (I )

parameter: t = 80 µs

parameter: t = 80 µs,

≥

2 x I x R

DS(on)max

2.2

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

I_D

g_fs

0.2

0.0

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

2.0

V_GS

I_D

Semiconductor Group

07/96

BUZ 78

Gate threshold voltage

Drain-source on-resistance

= (T )

GS (th)

DS (on)

parameter: V = V , I = 1 mA

parameter: I = 1 A, V = 10 V

4.6

98%

Ω

4.0

V_GS(th)

R_{DS (on)}

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

typ

98%

typ

0.4

0.0

-60

-20

100

°C

T_j

160

-60

-20

100

°C

T_j

160

Typ. capacitances

Forward characteristics of reverse diode

C = f (V )

I = (V

)

parameter:V = 0V, f = 1MHz

parameter: T , t = 80 µs

10 ¹

I_F

10 ⁰

10 ^-1

10 ^-2

10 ⁰

10 ^-1

10 ^-2

C_iss

T_j= 25 °C typ

T_j= 150 °C typ

T_j= 25 °C (98%)

T_j= 150 °C (98%)

C_oss

C_rss

0.0

0.4

0.8

1.2

1.6

2.0

2.4

3.0

V_DS

V_SD

07/96

Semiconductor Group

BUZ 78

Avalanche energy E = (T )

Typ. gate charge

parameter: I = 1.5 A, V = 50 V

= (Q

)

Gate

Ω

= 25 , L = 142 mH

parameter: I

= 3 A

D puls

180

140

120

100

E_AS

V_GS

DS max

0,2

0,8

DS max

100

120

°C

T_j

160

Q_Gate

Drain-source breakdown voltage

= (T )

(BR)DSS

960

920

V_(BR)DSS

900

880

860

840

820

800

780

760

740

720

-60

-20

100

°C

T_j

160

Semiconductor Group

07/96

BUZ 78

Package Outlines

TO-220 AB

Dimension in mm

Semiconductor Group

07/96

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产品型号BUZ78的概述

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