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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • BUF602IDBVT
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT 现货库存
  • 数量250 
  • 厂家TI 
  • 封装SOT-23 (DBV) 
  • 批号新批次 
  • 新到现货、一手货源、当天发货、bom配单
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  • 昂富(深圳)电子科技有限公司

     该会员已使用本站4年以上
  • BUF602IDBVT
  • 数量72282 
  • 厂家TI/德州仪器 
  • 封装N/A 
  • 批号23+ 
  • 一站式BOM配单,短缺料找现货,怕受骗,就找昂富电子.
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • BUF602IDBVT
  • 数量12500 
  • 厂家TI/德州仪器 
  • 封装SOT-23-5 
  • 批号2023+ 
  • 绝对原装正品全新深圳进口现货,优质渠道供应商!
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  • 美驻深办0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
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  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • BUF602IDBVT
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装贴/插片 
  • 批号2024+ 
  • 百分百原装正品,现货库存
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  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • BUF602IDBVT
  • 数量30000 
  • 厂家TI 
  • 封装SOT23-5 
  • 批号23+ 
  • 代理全新原装现货,价格优势
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  • 深圳市正信鑫科技有限公司

     该会员已使用本站12年以上
  • BUF602IDBVT
  • 数量5486 
  • 厂家TI 
  • 封装原厂封装 
  • 批号22+ 
  • 原装正品★真实库存★价格优势★欢迎来电洽谈
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT
  • 数量4797 
  • 厂家TI/德州仪器 
  • 封装NA/ 
  • 批号23+ 
  • 原装现货,当天可交货,原型号开票
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  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • BUF602IDBVT
  • 数量865000 
  • 厂家TI/德州仪器 
  • 封装sot-753 
  • 批号最新批号 
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  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • BUF602IDBVT
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装贴/插片 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
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  • 010-62104931 QQ:857273081QQ:1594462451
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  • 深圳市芯鹏泰科技有限公司

     该会员已使用本站8年以上
  • BUF602IDBVT
  • 数量7536 
  • 厂家TEXAS 
  • 封装SOT-23-5 
  • 批号23+ 
  • 高速放大器绝对进口原装现货
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  • 深圳市高捷芯城科技有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT
  • 数量7969 
  • 厂家TI(德州仪器) 
  • 封装SOT-23-5 
  • 批号23+ 
  • 支持大陆交货,美金交易。原装现货库存。
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  • 深圳市恒意法科技有限公司

     该会员已使用本站17年以上
  • BUF602IDBVT
  • 数量8152 
  • 厂家Texas Instruments 
  • 封装SC-74A,SOT-753 
  • 批号21+ 
  • 正规渠道/品质保证/原装正品现货
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  • 0755-83247729 QQ:2881514372
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  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT
  • 数量6328 
  • 厂家TI-德州仪器 
  • 封装SOT-23-5 
  • 批号▉▉:2年内 
  • ▉▉¥21.3元一有问必回一有长期订货一备货HK仓库
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  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • BUF602IDBVT
  • 数量11530 
  • 厂家Texas Instruments 
  • 封装SOT-23-5 
  • 批号SOT-25 
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  • 深圳市一呈科技有限公司

     该会员已使用本站9年以上
  • BUF602IDBVT
  • 数量
  • 厂家Texas Instruments 
  • 封装表面贴装型 
  • 批号23+ 
  • ▉原装正品▉力挺实单全系列可订
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • BUF602IDBVT
  • 数量85000 
  • 厂家TI/德州仪器 
  • 封装sot-753 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • 0755-23605827 QQ:2881495753
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  • 北京顺科电子科技有限公司

     该会员已使用本站8年以上
  • BUF602IDBVT
  • 数量5500 
  • 厂家TI/德州仪器 
  • 封装SOT23-5 
  • 批号21+ 
  • 进口品牌//国产品牌代理商18911556207
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  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • BUF602IDBVT
  • 数量3665 
  • 厂家TI 
  • 封装SOT23-5 
  • 批号2023+ 
  • 全新原厂原装产品、公司现货销售
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  • 深圳市创芯联科技有限公司

     该会员已使用本站9年以上
  • BUF602IDBVT
  • 数量13000 
  • 厂家TI 
  • 封装SOT23-5 
  • 批号2234+ 
  • 原厂货源/正品保证,诚信经营,欢迎询价
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  • 深圳市婷轩实业有限公司

     该会员已使用本站6年以上
  • BUF602IDBVT
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装SOT-23-5 
  • 批号23+ 
  • 进口原装现货热卖
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  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • BUF602IDBVT
  • 数量8500 
  • 厂家原厂品牌 
  • 封装原厂封装 
  • 批号新年份 
  • 羿芯诚只做原装长期供,支持实单
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  • 0755-82570600 QQ:2880123150
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  • 深圳市和谐世家电子有限公司

     该会员已使用本站13年以上
  • BUF602IDBVT
  • 数量722 
  • 厂家Texas Instruments 
  • 封装SC-74A,SOT-753 
  • 批号IC OPAMP BUFFER 1GHZ SOT23-5 
  • 只做进口原装
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  • 0755+84501032 QQ:1158840606
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  • 深圳市龙腾新业科技有限公司

     该会员已使用本站17年以上
  • BUF602IDBVT
  • 数量10000 
  • 厂家TI/德州仪器 
  • 封装SOT-23-5 
  • 批号23+ 
  • 进口原装现货
  • QQ:562765057QQ:562765057 复制
    QQ:370820820QQ:370820820 复制
  • 0755-84509636 QQ:562765057QQ:370820820
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  • 深圳市亿智腾科技有限公司

     该会员已使用本站8年以上
  • BUF602IDBVT
  • 数量16258 
  • 厂家Texas Instruments 
  • 封装原厂直销 
  • 批号1636+ 
  • 全新原装现货★★特价供应★★。★★特价★★假一赔十,工厂客户可放款
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  • 0755-82566711 QQ:799387964QQ:2777237833
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  • 深圳市芯柏然科技有限公司

     该会员已使用本站7年以上
  • BUF602IDBVT
  • 数量23480 
  • 厂家TI 
  • 封装SOT23-5 
  • 批号21+ 
  • 新到现货、一手货源、当天发货、价格低于市场
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  • 0755-82533534 QQ:287673858
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  • 上海振基实业有限公司

     该会员已使用本站13年以上
  • BUF602IDBVT
  • 数量1132 
  • 厂家TI 
  • 封装原厂封装 
  • 批号23+ 
  • 全新原装现货/另有约30万种现货,欢迎来电!
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  • 021-59159268 QQ:330263063QQ:1985476892
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  • 深圳市鹏和科技有限公司

     该会员已使用本站16年以上
  • BUF602IDBVT
  • 数量26112 
  • 厂家TI 
  • 封装SOT-23 
  • 批号23+ 
  • 原装正品 代理渠道
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  • 755-83990319 QQ:604309946QQ:1261585635
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  • 深圳市珩瑞科技有限公司

     该会员已使用本站2年以上
  • BUF602IDBVT
  • 数量
  • 厂家21+ 
  • 封装12000 
  • 批号 
  • ███全新原装正品,可配单
  • QQ:2938238007QQ:2938238007 复制
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  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • BUF602IDBVT
  • 数量660000 
  • 厂家TI(德州仪器) 
  • 封装SOT-23-5 
  • 批号23+ 
  • 支持实单/只做原装
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  • 0755-21006672 QQ:3008961398
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  • 深圳市宇川湘科技有限公司

     该会员已使用本站6年以上
  • BUF602IDBVT
  • 数量23000 
  • 厂家TI 
  • 封装SOT-23-5 
  • 批号23+ 
  • 原装正品现货,郑重承诺只做原装!
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  • 0755-84534256 QQ:2885348305QQ:2885348305
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  • 深圳市隆鑫创展电子有限公司

     该会员已使用本站15年以上
  • BUF602IDBVT
  • 数量30000 
  • 厂家TI 
  • 封装VQFN48 
  • 批号2022+ 
  • 电子元器件一站式配套服务QQ:122350038
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  • 深圳市华兴微电子有限公司

     该会员已使用本站16年以上
  • BUF602IDBVT
  • 数量5000 
  • 厂家TI 
  • 封装N/A 
  • 批号23+ 
  • 只做进口原装QQ询价,专营射频微波十五年。
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  • 0755-83002105 QQ:604502381
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT
  • 数量250 
  • 厂家TI 
  • 封装SOT-23 (DBV) 
  • 批号新批次 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:2881512844QQ:2881512844 复制
  • 075584507705 QQ:2881512844
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  • 深圳市炎凯科技有限公司

     该会员已使用本站7年以上
  • BUF602IDBVT
  • 数量19 
  • 厂家TI 
  • 封装SOT23-5 
  • 批号24+ 
  • 原装现货
  • QQ:354696650QQ:354696650 复制
    QQ:2850471056QQ:2850471056 复制
  • 0755-89587732 QQ:354696650QQ:2850471056
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  • 深圳市欧瑞芯科技有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT
  • 数量10000 
  • 厂家TI(德州仪器) 
  • 封装SC-74A,SOT-753 
  • 批号23+/24+ 
  • 绝对原装正品,可开13%专票,欢迎采购!!!
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  • 18565729389 QQ:3354557638QQ:3354557638
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  • 深圳市瑞天芯科技有限公司

     该会员已使用本站7年以上
  • BUF602IDBVT
  • 数量20000 
  • 厂家TI 
  • 封装SOT23-5 
  • 批号22+ 
  • 深圳现货库存,保证原装正品
  • QQ:1940213521QQ:1940213521 复制
  • 15973558688 QQ:1940213521
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  • 华富芯(深圳)智能科技有限公司

     该会员已使用本站7年以上
  • BUF602IDBVT
  • 数量15000 
  • 厂家TI/德州仪器 
  • 封装sot-753 
  • 批号22+ 
  • 大量原装正品现货热卖,价格优势,支持实单
  • QQ:1912486771QQ:1912486771 复制
  • 0755-23482780 QQ:1912486771
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  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • BUF602IDBVT
  • 数量5623 
  • 厂家TI 
  • 封装SOT-23 (DBV)5 
  • 批号21+ 
  • 全新原装原厂实力挺实单欢迎来撩
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871
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  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • BUF602IDBVT
  • 数量22000 
  • 厂家Texas Instruments 
  • 封装 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
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  • 0755-88608801多线 QQ:2881493920QQ:2881493921
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  • 深圳市一线半导体有限公司

     该会员已使用本站16年以上
  • BUF602IDBVTG4
  • 数量22000 
  • 厂家Texas Instruments 
  • 封装 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921
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  • 深圳市科雨电子有限公司

     该会员已使用本站9年以上
  • BUF602IDBVT
  • 数量3854 
  • 厂家TI 
  • 封装SOT-23-5 
  • 批号24+ 
  • ★体验愉快问购元件!!就找我吧!单价:28元
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  • 171-4729-1886(微信同号) QQ:97671956
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  • 深圳市科雨电子有限公司

     该会员已使用本站9年以上
  • BUF602IDBVTG4
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产品型号BUF602IDBVT的概述

BUF602IDBVT的概述 BUF602IDBVT是一款专为高性能应用设计的缓冲放大器,广泛应用于信号处理、音频放大和数据采集系统中。这款高带宽的缓冲器具备出色的动态性能及低失真特性,非常适合高速数字和模拟信号的传输。BUF602通过增强的输入阻抗和较低的输出阻抗,使信号在传输过程中保持良好的完整性,减少信号损失和干扰。 BUF602IDBVT的设计专注于提高系统的整体性能,包括输入和输出的线性度和带宽。在满足高精度要求的同时,BUF602还支持广泛的供电范围,适应多种应用场合,使其成为了工程师们的理想选择。 BUF602IDBVT的详细参数 BUF602IDBVT的主要技术参数包括但不限于以下几项: 1. 电源电压 (Vcc):建议供电电压范围为 ±2V 至 ±15V,非常灵活,能够适应多种应用场景。 2. 增益带宽积 (GBWP):高达 160 MHz,这一性能参数使得BUF60...

产品型号BUF602IDBVT的Datasheet PDF文件预览

B u r rĆ B ro w n P ro d u ct s  
BUF602  
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SBOS339OCTOBER 2005  
High-Speed, Closed-Loop Buffer  
FEATURES  
DESCRIPTION  
Wide Bandwidth: 1000MHz  
High Slew Rate: 8000V/µs  
Flexible Supply Range:  
±1.4V to ±6.3V Dual Supplies  
+2.8V to +12.6V Single Supply  
The BUF602 is a closed-loop buffer recommended for  
a wide range of applications. Its wide bandwidth  
(1000MHz) and high slew rate (8000V/µs) make it  
ideal for buffering very high-frequency signals. For  
AC-coupled applications, an optional mid-point  
reference (VREF) is provided, reducing the number of  
external components required and the necessary  
supply current to provide that reference.  
Output Current: 60mA (continuous)  
Peak Output Current: 350mA  
Low Quiescent Current: 5.8mA  
Standard Buffer Pinout  
The BUF602 is available in  
a standard SO-8  
surface-mount package and in an SOT23-5 where a  
smaller footprint is needed.  
Optional Mid-Supply Reference Buffer  
APPLICATIONS  
Low Impedance Reference Buffers  
Clock Distribution Circuits  
Video/Broadcast Equipment  
Communications Equipment  
High-Speed Data Acquisition  
Test Equipment and Instrumentation  
+VCC  
2k Input Z  
ZO < 2 to 20MHz  
VIN  
VOUT  
x1  
2k  
200  
VCC/2  
x1  
µ
1
F
Self-Referenced, AC-Coupled, Single-Supply Buffer  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2005, Texas Instruments Incorporated  
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated  
circuits be handled with appropriate precautions. Failure to observe proper handling and installation  
procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision  
integrated circuits may be more susceptible to damage because very small parametric changes could  
cause the device not to meet its published specifications.  
ORDERING INFORMATION(1)  
SPECIFIED  
PACKAGE  
DESIGNATOR  
TEMPERATURE  
RANGE  
PACKAGE  
MARKING  
ORDERING  
NUMBER  
TRANSPORT MEDIA,  
QUANTITY  
PRODUCT  
PACKAGE  
BUF602ID  
BUF602IDR  
Rails, 75  
BUF602  
SO-8  
D
–45°C to +85°C  
–45°C to +85°C  
BUF602  
AWO  
Tape and Reel, 2500  
Tape and Reel, 250  
Tape and Reel, 3000  
BUF602IDBVT  
BUF602IDBVR  
BUF602  
SOT23-5  
DBV  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document or see the TI  
web site at www.ti.com.  
ABSOLUTE MAXIMUM RATINGS(1)  
Power Supply  
±6.5VDC  
Internal Power Dissipation  
Input Common-Mode Voltage Range  
Storage Temperature Range: D, DBV  
Lead Temperature (soldering, 10s)  
Junction Temperature (TJ)  
ESD Rating:  
See Thermal Information  
±VS  
–40°C to +125°C  
+300°C  
+150°C  
Human Body Model (HBM)  
Charge Device Model (CDM)  
Machine Model (MM)  
2000V  
1000V  
200V  
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may  
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond  
those specified is not supported.  
Top View  
1
2
3
5
4
Out  
VCC  
VREF  
+VCC  
50kΩ  
x1  
50kΩ  
+VCC  
NC  
NC  
In  
1
2
3
4
8
7
6
5
Out  
200Ω  
x1  
In  
50kΩ  
NC  
200Ω  
x1  
SOT23−5  
x1  
VREF  
VCC  
50kΩ  
SO−8  
NC = No Connection  
AWO  
Pin Orientation/Package Marking  
2
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
ELECTRICAL CHARACTERISTICS: VS = ±5V  
Boldface limits are tested at +25°C.  
At RL = 100, unless otherwise noted.  
BUF602ID, IDBV  
TYP  
MIN/MAX OVER TEMPERATURE  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
PARAMETER  
AC PERFORMANCE  
Bandwidth  
CONDITIONS  
(See figure 30)  
VO = 500mVPP  
VO = 1VPP  
+25°C  
+25°C(2)  
UNITS  
TEST LEVEL(1)  
1000  
920  
880  
240  
8000  
350  
6
560  
550  
540  
MHz  
MHz  
MHz  
MHz  
V/µs  
ps  
min  
typ  
B
C
C
C
B
B
C
Full Power Bandwidth  
Bandwidth for 0.1dB Flatness  
Slew Rate  
VO = 5VPP  
typ  
VO = 500mVPP  
VO = 5V Step  
VO = 0.2V Step  
VO = 1V Step  
VO = 2VPP, 5MHz  
RL = 100Ω  
typ  
7000  
625  
6000  
640  
5000  
650  
min  
max  
typ  
Rise Time and Fall Time  
Settling Time to 0.05%  
Harmonic Distortion  
2nd-Harmonic  
ns  
–57  
–76  
–68  
–98  
4.8  
–44  
–63  
–63  
–85  
5.1  
–44  
–62  
–63  
–84  
5.6  
–42  
–60  
–63  
–82  
6.0  
dBc  
dBc  
max  
max  
max  
max  
max  
max  
typ  
B
B
B
B
B
B
C
C
RL = 500Ω  
3rd-Harmonic  
RL = 100Ω  
dBc  
RL = 500Ω  
dBc  
Input Voltage Noise  
Input Current Noise  
Differential Gain  
f > 100kHz  
nV/Hz  
pA/Hz  
%
f > 100kHz  
2.1  
2.6  
2.7  
2.8  
NTSC, RL = 150to 0V  
NTSC, RL = 150to 0V  
0.15  
0.04  
Differential Phase  
°
typ  
BUFFER DC PERFORMANCE(4)  
Maximum Gain  
RL = 500Ω  
RL = 500Ω  
0.99  
0.99  
±16  
1
1
1
V/V  
V/V  
max  
min  
A
A
A
B
A
B
Minimum Gain  
0.98  
±30  
0.98  
±36  
±125  
±8  
0.98  
±38  
±125  
±8.5  
±20  
Input Offset Voltage  
Average Input Offset Voltage Drift  
Input Bias Current  
mV  
max  
max  
max  
max  
µV/°C  
µA  
±3  
±7  
Average Input Bias Current Drift  
BUFFER INPUT  
±20  
nA/°C  
Input Impedance  
1.0 || 2.1  
M|| pF  
typ  
C
BUFFER OUTPUT  
Output Voltage Swing  
RL = 100Ω  
RL = 500Ω  
VO = 0V  
±3.8  
±4.0  
±60  
±3.7  
±3.8  
±50  
±3.7  
±3.8  
±49  
±3.7  
±3.8  
±48  
V
V
min  
min  
min  
typ  
B
A
A
C
C
Output Current (Continuous)  
Peak Output Current  
mA  
mA  
VO = 0V  
±350  
1.4  
Closed-Loop Output Impedance  
POWER SUPPLY  
f 10MHz  
typ  
Specified Operating Voltage  
Maximum Operating Voltage  
Minimum Operating Voltage  
Maximum Quiescent Current  
Minimum Quiescent Current  
Power-Supply Rejection Ratio (+PSRR)  
±5  
V
V
typ  
max  
min  
max  
min  
min  
C
A
B
A
A
A
±6.3  
±1.4  
6.3  
±6.3  
±1.4  
6.9  
±6.3  
±1.4  
7.2  
V
VS = ±5V  
VS = ±5V  
5.8  
5.8  
54  
mA  
mA  
dB  
5.3  
4.9  
4.3  
48  
46  
45  
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization  
and simulation. ©) Typical value only for information.  
(2) Junction temperature = ambient for 25°C specifications.  
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 8°C at high temperature limit for over  
temperature specifications.  
(4) Current is considered positive out of node.  
3
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
ELECTRICAL CHARACTERISTICS: VS = ±5V (continued)  
Boldface limits are tested at +25°C.  
At RL = 100, unless otherwise noted.  
BUF602ID, IDBV  
MIN/MAX OVER TEMPERATURE  
TYP  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
PARAMETER  
CONDITIONS  
+25°C  
+25°C(2)  
UNITS  
TEST LEVEL(1)  
THERMAL CHARACTERISTICS  
Specification: ID  
–40 to +85  
°C  
typ  
C
Thermal Resistance θJA  
D
SO-8  
Junction-to-Ambient  
Junction-to-Ambient  
125  
150  
°C/W  
°C/W  
typ  
typ  
C
C
DBV SOT23-5  
4
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
ELECTRICAL CHARACTERISTICS: VS = +5V  
Boldface limits are tested at +25°C.  
At RL = 100to VS/2, unless otherwise noted.  
BUF602ID, IDBV  
TYP  
MIN/MAX OVER TEMPERATURE  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
PARAMETER  
AC PERFORMANCE  
Bandwidth  
CONDITIONS  
(See figure 31)  
VO = 500mVPP  
VO = 1VPP  
+25°C  
+25°C(2)  
UNITS  
TEST LEVEL(1)  
780  
700  
420  
130  
2500  
450  
6
400  
400  
390  
MHz  
MHz  
MHz  
MHz  
V/µs  
ps  
min  
typ  
B
C
C
C
B
B
C
Full-Power Bandwidth  
Bandwidth for 0.1dB Flatness  
Slew Rate  
VO = 3VPP  
typ  
VO = 500mVPP  
VO = 3V Step  
VO = 0.2V Step  
VO = 1V Step  
VO = 2VPP, 5MHz  
RL = 100Ω  
typ  
1800  
875  
1600  
875  
1400  
900  
min  
max  
typ  
Rise Time and Fall Time  
Settling Time to 0.05%  
Harmonic Distortion  
2nd-Harmonic  
ns  
–50  
–73  
–70  
–73  
4.9  
–45  
–62  
–64  
–72  
5.2  
–44  
–61  
–64  
–72  
5.7  
–43  
–60  
–63  
–71  
6.1  
dBc  
dBc  
max  
max  
max  
max  
max  
max  
typ  
B
B
B
B
B
B
C
C
RL = 500Ω  
3rd-Harmonic  
RL = 100Ω  
dBc  
RL = 500Ω  
dBc  
Input Voltage Noise  
Input Current Noise  
Differential Gain  
f > 100kHz  
nV/Hz  
pA/Hz  
%
f > 100kHz  
2.2  
2.7  
2.8  
2.9  
NTSC, RL = 100to VS/2  
NTSC, RL = 100to VS/2  
0.16  
0.05  
Differential Phase  
°
typ  
BUFFER DC PERFORMANCE(4)  
Maximum Gain  
RL = 500Ω  
RL = 500Ω  
0.99  
0.99  
±16  
1
1
1
V/V  
V/V  
max  
min  
A
A
A
B
A
B
Minimum Gain  
0.98  
±30  
0.98  
±36  
±125  
±8  
0.98  
±38  
±125  
±8.5  
±20  
Input Offset Voltage  
Average Input Offset Voltage Drift  
Input Bias Current  
mV  
max  
max  
max  
max  
µV/°C  
µA  
±3  
±7  
Average Input Bias Current Drift  
BUFFER INPUT  
±20  
nA/°C  
Input Impedance  
1.0 || 2.1  
M|| pF  
typ  
C
BUFFER OUTPUT  
Most Positive Output Voltage  
RL = 100Ω  
RL = 500Ω  
RL = 100Ω  
RL = 500Ω  
VO = 0V  
+3.9  
+4.1  
+1.1  
+0.9  
±60  
+3.7  
+3.8  
+1.3  
+1.2  
±50  
+3.7  
+3.8  
+1.3  
+1.2  
±49  
+3.7  
+3.8  
+1.3  
+1.2  
±48  
V
V
min  
min  
max  
max  
min  
typ  
B
A
B
A
A
C
C
Least Positive Output Voltage  
V
V
Output Current (Continuous)  
mA  
mA  
Peak Output Current  
VO = 0V  
±160  
1.4  
Closed-Loop Output Impedance  
MID-POINT REFERENCE OUTPUT  
Maximum Mid Supply Reference Voltage  
Minimum Mid Supply Reference Voltage  
Mid-Supply Output Current, Sourcing  
Mid-Supply Output Current, Sinking  
Mid-Supply Output Impedance  
f 10MHz  
typ  
2.5  
2.5  
800  
70  
2.6  
2.4  
2.6  
2.4  
2.6  
2.4  
V
V
max  
min  
typ  
A
A
C
C
C
µA  
µA  
typ  
200  
typ  
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization  
and simulation. ©) Typical value only for information.  
(2) Junction temperature = ambient for 25°C specifications.  
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 4°C at high temperature limit for over  
temperature specifications.  
(4) Current is considered positive out of node.  
5
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
ELECTRICAL CHARACTERISTICS: VS = +5V (continued)  
Boldface limits are tested at +25°C.  
At RL = 100to VS/2, unless otherwise noted.  
BUF602ID, IDBV  
MIN/MAX OVER TEMPERATURE  
TYP  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
PARAMETER  
CONDITIONS  
+25°C  
+25°C(2)  
UNITS  
TEST LEVEL(1)  
POWER SUPPLY  
Specified Operating Voltage  
Maximum Operating Voltage  
Minimum Operating Voltage  
Maximum Quiescent Current  
Minimum Quiescent Current  
Power-Supply Rejection Ratio (+PSRR)  
THERMAL CHARACTERISTICS  
Specification: ID  
+5  
V
V
typ  
max  
min  
max  
min  
min  
C
A
B
A
A
A
+12.6  
+2.8  
5.8  
+12.6  
+2.8  
6.3  
+12.6  
+2.8  
6.5  
V
VS = +5V  
VS = +5V  
5.3  
5.3  
52  
mA  
mA  
dB  
4.8  
4.5  
3.9  
46  
44  
43  
–40 to +85  
°C  
typ  
C
Thermal Resistance θJA  
D
SO-8  
Junction-to-Ambient  
Junction-to-Ambient  
125  
150  
°C/W  
°C/W  
typ  
typ  
C
C
DBV SOT23-5  
6
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
ELECTRICAL CHARACTERISTICS: VS = +3.3V  
Boldface limits are tested at +25°C.  
At RL = 100, unless otherwise noted.  
BUF602ID, IDBV  
TYP  
MIN/MAX OVER TEMPERATURE  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
PARAMETER  
CONDITIONS  
+25°C  
+25°C(2)  
UNITS  
TEST LEVEL(1)  
AC PERFORMANCE  
Bandwidth  
VO = 500mVPP  
VO = 1VPP  
600  
520  
110  
800  
580  
6.5  
320  
320  
310  
MHz  
MHz  
MHz  
V/µs  
ps  
min  
typ  
B
C
C
B
B
C
Full Power Bandwidth  
Bandwidth for 0.1dB Flatness  
Slew Rate  
VO = 500mVPP  
VO = 1.4V Step  
VO = 0.2V Step  
VO = 1V Step  
VO = 1VPP, 5MHz  
RL = 100Ω  
typ  
650  
600  
600  
min  
max  
typ  
Rise Time and Fall Time  
Settling Time to 0.05%  
Harmonic Distortion  
2nd-Harmonic  
1100  
1100  
1150  
ns  
–59  
–76  
–70  
–63  
4.9  
–49  
–61  
–51  
–51  
5.2  
–49  
–57  
–48  
–48  
5.7  
–48  
–53  
–44  
–44  
6.1  
dBc  
dBc  
max  
max  
max  
max  
max  
max  
B
B
B
B
B
B
RL = 500Ω  
3rd-Harmonic  
RL = 100Ω  
dBc  
RL = 500Ω  
dBc  
Input Voltage Noise  
f > 100kHz  
nV/Hz  
pA/Hz  
Input Current Noise  
f > 100kHz  
2.2  
2.7  
2.8  
2.9  
BUFFER DC PERFORMANCE(4)  
Maximum Gain  
RL = 500Ω  
RL = 500Ω  
0.99  
0.99  
±16  
1
1
1
V/V  
V/V  
max  
min  
A
A
A
B
A
B
Minimum Gain  
0.98  
±30  
0.98  
±36  
±125  
±8  
0.98  
±38  
±125  
±8.5  
±20  
Input Offset Voltage  
mV  
max  
max  
max  
max  
Average Input Offset Voltage Drift  
Input Bias Current  
µV/°C  
µA  
±3  
±7  
Average Input Bias Current Drift  
BUFFER INPUT  
±20  
nA/°C  
Input Impedance  
1.0 || 2.1  
M|| pF  
typ  
C
BUFFER OUTPUT  
Most Positive Output Voltage  
RL = 100Ω  
RL = 500Ω  
RL = 100Ω  
RL = 500Ω  
VO = 0  
+2.1  
+2.3  
+1.2  
+1.0  
±60  
+2.0  
+2.2  
+1.3  
+1.1  
±50  
+2.0  
+2.2  
+1.3  
+1.1  
±49  
+2.0  
+2.2  
+1.3  
+1.1  
±48  
V
V
min  
min  
max  
max  
min  
typ  
B
A
B
A
A
C
C
Least Positive Output Voltage  
V
V
Output Current (Continuous)  
Peak Output Current  
mA  
mA  
±100  
1.4  
Closed-Loop Output Impedance  
MID-POINT REFERENCE OUTPUT  
Maximum Mid Supply Reference Voltage  
Minimum Mid Supply Reference Voltage  
Mid Supply Output Current, Sourcing  
Mid Supply Output Current, Sinking  
Mid Supply Output Impedance  
POWER SUPPLY  
f 10MHz  
typ  
1.65  
1.65  
500  
60  
1.72  
1.58  
1.72  
1.58  
1.72  
1.58  
V
V
max  
min  
typ  
A
A
C
C
C
µA  
µA  
typ  
200  
typ  
Specified Operating Voltage  
+3.3  
V
V
typ  
max  
min  
max  
min  
min  
C
A
B
A
A
A
Maximum Operating Voltage  
Minimum Operating Voltage  
+12.6  
+2.8  
5.5  
+12.6  
+2.8  
6.0  
+12.6  
+2.8  
6.3  
V
Maximum Quiescent Current  
Minimum Quiescent Current  
VS = +3.3V  
VS = +3.3V  
5.0  
5.0  
50  
mA  
mA  
dB  
4.5  
4.2  
3.8  
Power-Supply Rejection Ratio (+PSRR)  
44  
42  
41  
(1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization  
and simulation. ©) Typical value only for information.  
(2) Junction temperature = ambient for 25°C specifications.  
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 2°C at high temperature limit for over  
temperature specifications.  
(4) Current is considered positive out of node.  
7
BUF602  
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SBOS339OCTOBER 2005  
ELECTRICAL CHARACTERISTICS: VS = +3.3V (continued)  
Boldface limits are tested at +25°C.  
At RL = 100, unless otherwise noted.  
BUF602ID, IDBV  
MIN/MAX OVER TEMPERATURE  
TYP  
0°C to  
70°C(3)  
–40°C to  
+85°C(3)  
MIN/  
MAX  
PARAMETER  
CONDITIONS  
+25°C  
+25°C(2)  
UNITS  
TEST LEVEL(1)  
THERMAL CHARACTERISTICS  
Specification: ID  
–40 to +85  
°C  
typ  
C
Thermal Resistance θJA  
D
SO-8  
Junction-to-Ambient  
Junction-to-Ambient  
125  
150  
°C/W  
°C/W  
typ  
typ  
C
C
DBV SOT23-5  
8
BUF602  
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SBOS339OCTOBER 2005  
TYPICAL CHARACTERISTICS: VS = ±5V  
At TA = +25°C and RL = 100, unless otherwise noted.  
BUFFER BANDWIDTH vs OUTPUT VOLTAGE  
BUFFER BANDWIDTH vs LOAD RESISTANCE  
3
0
3
6
9
6
3
0
3
6
9
VOUT = 0.5VPP  
RL = 100  
VO = 0.2VPP  
RL = 1k  
VO = 5VPP  
RL = 500  
VO = 0.5VPP  
VO = 1VPP  
L = 100  
R
12  
15  
18  
VO = 4VPP  
VO = 2VPP  
1M  
10M  
100M  
1G 2G  
1M  
10M  
100M  
1G 2G  
Frequency (Hz)  
Frequency (Hz)  
Figure 1.  
Figure 2.  
BUFFER GAIN FLATNESS  
INPUT VOLTAGE AND CURRENT NOISE DENSITY  
0.5  
0.4  
0.3  
0.2  
0.1  
0
100  
10  
1
VO = 0.5VPP  
RL = 100  
Input Voltage Noise (4.8nV/ Hz)  
0.1  
0.2  
0.3  
0.4  
0.5  
Input Current Noise (2.1pA/ Hz)  
1M  
10M  
100M  
Frequency (Hz)  
1G  
100  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
Figure 3.  
Figure 4.  
BUFFER SMALL-SIGNAL PULSE RESPONSE  
BUFFER LARGE-SIGNAL PULSE RESPONSE  
150  
100  
50  
4
3
2
1
0
0
1
2
3
4
50  
VOUT = 0.2VPP  
VOUT = 5VPP  
100  
150  
RL = 100  
RL = 100  
f = 40MHz  
f = 40MHz  
Time (2ns/div)  
Time (2ns/div)  
Figure 5.  
Figure 6.  
9
BUF602  
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SBOS339OCTOBER 2005  
TYPICAL CHARACTERISTICS: VS = ±5V (continued)  
At TA = +25°C and RL = 100, unless otherwise noted.  
HARMONIC DISTORTION vs FREQUENCY  
5MHz HARMONIC DISTORTION vs LOAD RESISTANCE  
50  
60  
70  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
RL = 500  
VO = 2VPP  
2nd−Harmonic  
2nd−Harmonic  
3rd−Harmonic  
80  
90  
3rd−Harmonic  
f = 5MHz  
VO = 2VPP  
100  
100  
100  
1
10  
1k  
100  
)
Frequency (MHz)  
Load Resistance (  
Figure 7.  
Figure 8.  
HARMONIC DISTORTION vs OUTPUT VOLTAGE  
5MHz HARMONIC DISTORTION vs SUPPLY VOLTAGE  
60  
70  
80  
90  
40  
50  
60  
70  
80  
90  
f = 5MHz  
RL = 500  
RL = 500  
VO = 2VPP  
2nd−Harmonic  
3rd−Harmonic  
2nd−Harmonic  
100  
110  
3rd−Harmonic  
3.0 3.5 4.0  
100  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
2.0  
2.5  
4.5  
5.0  
5.5  
6.0  
Output Voltage (VPP  
)
± Supply Voltage  
Figure 9.  
Figure 10.  
BUFFER OUTPUT IMPEDANCE  
BUFFER GROUP DELAY TIME vs FREQUENCY  
100  
10  
1
700  
600  
500  
400  
300  
200  
100  
1k  
10k  
100k  
1M  
10M  
100M  
1G  
0
100 200 300 400 500 600 700 800 900 1000  
Frequency (MHz)  
Frequency (Hz)  
Figure 11.  
Figure 12.  
10  
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
TYPICAL CHARACTERISTICS: VS = ±5V (continued)  
At TA = +25°C and RL = 100, unless otherwise noted.  
POWER-SUPPLY REJECTION RATIO vs FREQUENCY  
OUTPUT SWING VOLTAGE vs TEMPERATURE  
50  
4.10  
4.05  
4.00  
3.95  
3.90  
45  
+PSRR  
40  
35  
30  
25  
20  
15  
+VO  
VO  
PSRR  
10  
5
0
20  
40  
0
20  
40  
60  
80  
100  
120  
10k  
100k  
1M  
10M  
100M  
_
Ambient Temperature ( C)  
Frequency (Hz)  
Figure 13.  
Figure 14.  
DC DRIFT vs TEMPERATURE  
BUFFER OUTPUT VOLTAGE AND CURRENT LIMITATIONS  
30  
25  
20  
15  
10  
5
6
5
4
3
2
1
0
5
1W Internal  
Power Limit  
4
100  
3
2
1
0
1
2
3
4
5
Load Line  
Buffer Input Offset Voltage (VOS  
)
25 Load Line  
50 Load Line  
Buffer Input Bias Current (IB)  
1W Internal  
Power Limit  
0
20  
40  
0
20  
40  
60  
80  
100  
120  
_
Ambient Temperature ( C)  
Output Current (mA)  
Figure 15.  
Figure 16.  
11  
 
BUF602  
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SBOS339OCTOBER 2005  
TYPICAL CHARACTERISTICS: VS = +5V  
At TA = +25°C and RL = 100to VS/2, unless otherwise noted.  
BUFFER BANDWIDTH vs OUTPUT VOLTAGE  
HARMONIC DISTORTION vs FREQUENCY  
3
0
3
6
9
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
RL = 500  
VO = 2VPP  
RL = 100  
VO = 0.5VPP  
VO = 2VPP  
VO = 3VPP  
VO = 0.2VPP  
2nd−Harmonic  
12  
15  
18  
VO = 1VPP  
3rd−Harmonic  
1M  
10M  
100M  
1G 2G  
1
10  
100  
Frequency (Hz)  
Frequency (MHz)  
Figure 17.  
Figure 18.  
BUFFER GAIN FLATNESS  
5MHz HARMONIC DISTORTION vs LOAD RESISTANCE  
0.5  
0.4  
0.3  
0.2  
0.1  
0
60  
65  
70  
75  
80  
85  
90  
VOUT = 0.5VPP  
RL = 100  
2nd−Harmonic  
0.1  
0.2  
0.3  
0.4  
0.5  
3rd−Harmonic  
f = 5MHz  
VO = 2VPP  
1
10  
Frequency (MHz)  
100  
100  
1k  
500  
Load Resistance (  
)
Figure 19.  
BUFFER PULSE RESPONSE  
Figure 20.  
HARMONIC DISTORTION vs OUTPUT VOLTAGE  
40  
50  
60  
70  
80  
90  
2.8  
4.3  
3.7  
3.1  
2.5  
1.9  
1.3  
0.7  
f = 5MHz  
RL = 500  
2.7  
2.6  
2.5  
2.4  
2.3  
2.2  
Small−Signal  
Large−Signal  
±
2.55VDC 0.1V  
±
2.5VDC 1.5V  
Left Scale  
2nd−Harmonic  
Right Scale  
3rd−Harmonic  
RL = 100  
f = 40MHz  
100  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Time (2ns/div)  
Output Voltage (VPP  
)
Figure 21.  
Figure 22.  
12  
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
TYPICAL CHARACTERISTICS: VS = +3.3V  
At TA = +25°C and RL = 100to VS/2, unless otherwise noted.  
BUFFER BANDWIDTH vs OUTPUT VOLTAGE  
HARMONIC DISTORTION vs FREQUENCY  
3
40  
RL = 500  
RL = 100  
VO = 0.5VPP  
45 VO = 1VPP  
0
3
6
9
50  
55  
60  
65  
70  
75  
VO = 0.2VPP  
VO = 1VPP  
3rd−Harmonic  
12  
15  
18  
2nd−Harmonic  
80  
1
1M  
10M  
100M  
1G 2G  
10  
100  
Frequency (Hz)  
Frequency (MHz)  
Figure 23.  
Figure 24.  
BUFFER GAIN FLATNESS  
5MHz HARMONIC DISTORTION vs LOAD RESISTANCE  
50  
55  
60  
65  
70  
75  
80  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
f = 5MHz  
VO = 1VPP  
VO = 0.5VPP  
RL = 100  
3rd−Harmonic  
2nd−Harmonic  
100  
1k  
1
10  
100  
300  
Load Resistance (  
)
Frequency (MHz)  
Figure 25.  
Figure 26.  
BUFFER PULSE RESPONSE  
HARMONIC DISTORTION vs OUTPUT VOLTAGE  
30  
40  
50  
60  
70  
80  
90  
2.0  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
RL = 100  
f = 5MHz  
f = 40MHz  
RL = 500  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
3rd−Harmonic  
Small−Signal  
1.65VDC 0.1V  
Large−Signal  
±
±
1.65VDC 0.7V  
Left Scale  
Right Scale  
2nd−Harmonic  
1.25  
0.50  
0.75  
1.00  
1.50  
Time (2ns/div)  
Output Voltage (VPP  
)
Figure 27.  
Figure 28.  
13  
BUF602  
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SBOS339OCTOBER 2005  
bandwidth. The key requirement of broadband  
single-supply operation of the BUF602 is to maintain  
output signal swings within the usable voltage ranges.  
The circuit of Figure 30 establishes an input midpoint  
bias using the internal mid-point reference. The input  
signal is then AC-coupled into this mid-point voltage  
bias. Again, on a single +5V supply, the output  
voltage can swing to within 1V of either supply pin  
while delivering more than 60mA output current. A  
demanding 100load to a mid-point bias is used in  
this characterization circuit.  
APPLICATION INFORMATION  
WIDEBAND BUFFER OPERATION  
The BUF602 gives the exceptional AC performance  
of a wideband buffer. Requiring only 5.8mA quiescent  
current, the BUF602 will swing to within 1V of either  
supply rail and deliver in excess of 60mA at room  
temperature. This low output headroom requirement,  
along with supply voltage independent biasing, gives  
remarkable single (+5V) supply operation. The  
BUF602 will deliver greater than 500MHz bandwidth  
driving a 2VPP output into 100on a single +5V  
supply.  
VCC  
Figure 29 shows the DC-coupled, dual power-supply  
circuit configuration used as the basis of the ±5V  
Electrical and Typical Characteristics. For test  
purposes, the input impedance is set to 50with a  
resistor to ground and the output impedance is set to  
50with a series output resistor. Voltage swings  
reported in the specifications are taken directly at the  
input and output pins while load powers (dBm) are  
defined at a matched 50load. In addition to the  
usual power-supply decoupling capacitors to ground,  
a 0.01µF capacitor can be included between the two  
power-supply pins. This optional added capacitor will  
typically improve the 2nd-harmonic distortion  
performance by 3dB to 6dB.  
µ
0.1  
F
50  
VOUT  
To VCC/2  
50  
50 Load  
2k  
200  
VCC/2  
µ
0.1  
F
BUF602  
Figure 30. AC-Coupled, Single-Supply,  
Specification and Test Circuit  
+5V  
+
µ
µ
4.7 F  
0.1  
0.1  
F
F
LOW-IMPEDANCE TRANSMISSION LINES  
The most important equations and technical basics of  
transmission lines support the results found for the  
various drive circuits presented here. An ideal  
transmission medium with zero ohmic impedance  
would have inductance and capacitance distributed  
over the transmission cable. Both inductance and  
capacitance detract from the transmission quality of a  
line. Each input is connected with high impedance to  
50 Source  
50  
VIN  
VOUT  
50 Load  
BUF602  
50  
µ
µ
4.7 F  
+
5V  
the line as in  
configuration, and each adds capacitance of at least  
few picofarad. The typical transmission line  
impedance (ZO) defines the line type. In Equation 1,  
the impedance is calculated by the square root of line  
inductance (LT) divided by line capacitance ©T):  
a daisy chain or loop-through  
Figure 29. DC-Coupled, Bipolar Supply,  
Specification and Test Circuit  
a
Figure 30 shows the AC-coupled, single-supply circuit  
configuration used as the basis of the +5V Electrical  
and Typical Characteristics. Though not a rail-to-rail  
design, the BUF602 requires minimal input and  
output voltage headroom compared to other very  
wideband buffers. It will deliver a 3VPP output swing  
on a single +5V supply with greater than 400MHz  
LT  
CT  
Ǹ
Z0 +  
(1)  
14  
 
 
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In the same manner, line inductance and capacitance  
determine the delay time of a transmission line as  
shown in Equation 2:  
ROUT  
ZO  
Ǹ
VIN  
BUF602  
VOUT  
RLOAD  
t + LT   CT  
(2)  
Typical values for ZO are 240for symmetrical traces  
and 75or 50for coax cables. ZO sometimes  
decreases to 30to 40in high data rate bus  
systems for bus lines on printed circuit boards  
(PCBs). In general, the more complex a bus system  
is, the lower ZO will be. Because it increases the  
capacitance of the transmission medium, a complex  
system lowers the typical line impedance, resulting in  
higher drive requirements for the line drivers used  
here.  
Figure 31. Typical Line Driver Circuit  
SELF-BIASED, LOW-IMPEDANCE MID  
SUPPLY VOLTAGE REFERENCE  
Using the mid-point reference in conjunction with the  
BUF602 allows the creation of a low-impedance  
reference from DC to 250MHz.  
Transmission lines are almost always terminated on  
the transmitter line and always terminated on the  
receiver side. Unterminated lines generate signal  
reflections that degrade the pulse fidelity. The driver  
circuit transmits the output voltage (VOUT) over the  
line. The signal appears at the end of the line and will  
be reflected when not properly terminated. The  
reflected portion of VOUT, called VREFL, returns to the  
driver. The transmitted signal is the sum of the  
The 0.1µF external capacitor is used in Figure 32 to  
filter the noise.  
VS  
BUF602  
original signal VOUT and the reflected VREFL  
.
50k  
50k  
VT + VOUT ) VREFL  
200  
(3)  
x1  
VS/2  
x1  
The magnitude of the reflected signal depends upon  
the typical line impedance (Z0) and the value of the  
termination resistor Z1.  
VREFL  
VOUT  
G
(4)  
20  
Γ denotes the reflection factor and is described by  
Equation 5.  
µ
0.1 F  
Z1 * Z0  
G + ǒ Ǔ  
Γ can vary from –1 to +1.  
Z1 ) Z0  
Figure 32. Self-Biased, Low Impedance Mid  
Supply Voltage Reference  
(5)  
The conditions at the corner points of Equation 5 are  
as follows:  
SELF-REFERENCED, AC-COUPLED  
WIDEBAND BUFFER  
Z0 = Z1  
Z0 = ∞  
Z0 = 0  
Γ = 0  
VREFL = 0  
Whenever  
a
high-speed AC-coupled buffer is  
Γ = –1  
Γ = +1  
VREFL = –VOUT  
VREFL = +VOUT  
required, you should consider the BUF602. One  
feature of the BUF602 is the mid-supply reference  
voltage, saving external components and power  
dissipation.  
A capacitor on the output of the  
An unterminated driver circuit complicates the  
situation even more. VREFL is reflected a second time  
on the driver side and wanders like a ping-pong ball  
back and forth over the line. When this happens, it is  
usually impossible to recover the output signal VOUT  
on the receiver side.  
mid-supply reference is recommended to bandlimit  
the noise contribution of the mid-supply reference  
voltage generated by the two 50kinternal resistors.  
This circuit is shown on the front page of the  
datasheet.  
The figure shown in Figure 31 makes use of the  
BUF602 as a line driver. The BUF602 exhibits high  
input impedance and low output impedance, making it  
ideal whenever a buffer is required.  
15  
 
 
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DESIGN-IN TOOLS  
graph is bounded by a Safe Operating Area of 1W  
maximum internal power dissipation. Superimposing  
resistor load lines onto the plot shows that the  
BUF602 can drive ±3V into 25or ±3.5V into 50Ω  
without exceeding the output capabilities or the 1W  
dissipation limit.  
DEMONSTRATION BOARDS  
Two PC boards are available to assist in the initial  
evaluation of circuit performance using the BUF602 in  
its two package styles. Both are available free, as  
unpopulated PC boards delivered with descriptive  
documentation. The summary information for these  
boards is shown in Table 1.  
The minimum specified output voltage and current  
over-temperature are set by worst-case simulations at  
the cold temperature extreme. Only at cold startup  
will the output current and voltage decrease to the  
numbers shown in the Electrical Characteristic tables.  
As the output transistors deliver power, the junction  
temperatures will increase, decreasing both VBE  
(increasing the available output voltage swing) and  
increasing the current gains (increasing the available  
output current). In steady-state operation, the  
available output voltage and current will always be  
greater than that shown in the over-temperature  
specifications, since the output stage junction  
temperatures will be higher than the minimum  
specified operating ambient.  
Table 1. Demo Board Listing  
LITERATURE  
REQUEST  
NUMBER  
PACKA  
GE  
BOARD PART  
NUMBER  
PRODUCT  
BUF602ID  
SO-8  
DEM-BUF-SO-1A  
DEM-BUF-SOT-1A  
SBAU118  
SBAU117  
BUF602IDBV  
SOT23-5  
To request either of these boards, use the Texas  
Instruments web site (www.ti.com).  
MACROMODELS AND APPLICATIONS  
SUPPORT  
For a buffer, the noise model is shown in Figure 33.  
Equation 6 shows the general form for the output  
noise voltage using the terms shown in Figure 33.  
Computer simulation of circuit performance using  
SPICE is often useful when analyzing the  
performance of analog circuits and systems. This is  
particularly true for video and RF amplifier circuits  
where parasitic capacitance and inductance can have  
a major effect on circuit performance. A SPICE model  
for the BUF602 is available through the TI web site  
(www.ti.com). These models do a good job of  
predicting small-signal AC and transient performance  
under a wide variety of operating conditions. They do  
not do as well in predicting the harmonic distortion or  
dG/dP characteristics. These models do not attempt  
to distinguish between package types in their  
small-signal AC performance.  
en  
eO  
RS  
in  
4kTRS  
Figure 33. Buffer Noise Analysis Model  
OUTPUT CURRENT AND VOLTAGE  
SǓ2  
nV  
2
Ǹ
ǒ
eO + en ) inR ) 4kTRS  
The BUF602 provides output voltage and current  
capabilities that are not usually found in wideband  
buffers. Under no-load conditions at 25°C, the output  
voltage typically swings closer than 1.2V to either  
supply rail; the +25°C swing limit is within 1.2V of  
either rail. Into a 15load (the minimum tested load),  
it is tested to deliver more than ±60mA.  
Ǹ
Hz  
(6)  
THERMAL ANALYSIS  
Due to the high output power capability of the  
BUF602, heatsinking or forced airflow may be  
required under extreme operating conditions.  
Maximum desired junction temperature will set the  
maximum allowed internal power dissipation as  
described below. In no case should the maximum  
junction temperature be allowed to exceed 150°C.  
The specifications described above, though familiar in  
the industry, consider voltage and current limits  
separately. In many applications, it is the voltage ×  
current, or V-I product, which is more relevant to  
circuit operation. Refer to the Buffer Output Voltage  
and Current Limitations plot (Figure 16) in the Typical  
Characteristics. The X and Y axes of this graph show  
the zero-voltage output current limit and the  
zero-current output voltage limit, respectively. The  
four quadrants give a more detailed view of the  
BUF602 output drive capabilities, noting that the  
Operating junction temperature (TJ) is given by TA  
+
PD × θJA. The total internal power dissipation (PD) is  
the sum of quiescent power (PDQ) and additional  
power dissipated in the output stage (PDL) to deliver  
load power. Quiescent power is simply the specified  
no-load supply current times the total supply voltage  
across the part. PDL will depend on the required  
16  
 
 
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SBOS339OCTOBER 2005  
output signal and load but would, for a grounded  
resistive load, be at a maximum when the output is  
fixed at a voltage equal to ½ of either supply voltage  
(for equal bipolar supplies). Under this condition, PDL  
and ground traces to minimize inductance between  
the pins and the decoupling capacitors. The  
power-supply connections should always be  
decoupled with these capacitors. An optional supply  
decoupling capacitor (0.1µF) across the two power  
supplies (for bipolar operation) will improve  
2nd-harmonic distortion performance. Larger (2.2µF  
to 6.8µF) decoupling capacitors, effective at lower  
frequency, should also be used on the main supply  
pins. These may be placed somewhat farther from  
the device and may be shared among several  
devices in the same area of the PC board.  
2
= VS /(4 × RL).  
Note that it is the power in the output stage and not  
into the load that determines internal power  
dissipation.  
As a worst-case example, compute the maximum TJ  
using a BUF602IDBV in the circuit on the front page  
operating at the maximum specified ambient  
temperature of +85°C and driving a grounded 20Ω  
load.  
c) Careful selection and placement of external  
components will preserve the high-frequency  
performance of the BUF602. Resistors should be a  
very low reactance type. Surface-mount resistors  
work best and allow a tighter overall layout. Metal film  
or carbon composition, axially-leaded resistors can  
also provide good high-frequency performance.  
Again, keep their leads and PC board traces as short  
as possible. Never use wirewound type resistors in a  
high-frequency application.  
PD = 10V × 5.8mA + 52/(4 × 20) = 370.5mW  
Maximum TJ = +85°C + (0.37W × 150°C/W) = 141°C.  
Although this is still below the specified maximum  
junction temperature, system reliability considerations  
may require lower tested junction temperatures. The  
highest possible internal dissipation will occur if the  
load requires current to be forced into the output for  
positive output voltages or sourced from the output  
for negative output voltages. This puts a high current  
through a large internal voltage drop in the output  
transistors. The output V-I plot (Figure 16) shown in  
the Typical Characteristics include a boundary for 1W  
maximum internal power dissipation under these  
conditions.  
d) Connections to other wideband devices on the  
board may be made with short, direct traces or  
through onboard transmission lines. For short  
connections, consider the trace and the input to the  
next device as a lumped capacitive load. Relatively  
wide traces (50mils to 100mils) should be used,  
preferably with ground and power planes opened up  
around them. If a long trace is required, and the 6dB  
BOARD LAYOUT GUIDELINES  
signal loss intrinsic to  
a
doubly-terminated  
transmission line is acceptable, implement a matched  
impedance transmission line using microstrip or  
stripline techniques (consult an ECL design handbook  
for microstrip and stripline layout techniques). A 50Ω  
environment is normally not necessary on board, and  
in fact, a higher impedance environment will improve  
distortion as shown in the distortion versus load plots.  
Achieving  
optimum  
performance  
with  
a
high-frequency amplifier like the BUF602 requires  
careful attention to board layout parasitics and  
external component types. Recommendations that  
will optimize performance include:  
a) Minimize parasitic capacitance to any AC ground  
for all of the signal I/O pins. Parasitic capacitance on  
the output pins can cause instability: on the  
noninverting input, it can react with the source  
impedance to cause unintentional bandlimiting. To  
reduce unwanted capacitance, a window around the  
signal I/O pins should be opened in all of the ground  
and power planes around those pins. Otherwise,  
ground and power planes should be unbroken  
elsewhere on the board.  
e) Socketing a high-speed part like the BUF602 is  
not recommended. The additional lead length and  
pin-to-pin capacitance introduced by the socket can  
create an extremely troublesome parasitic network  
that makes it almost impossible to achieve a smooth,  
stable frequency response. Best results are obtained  
by soldering the BUF602 onto the board.  
b) Minimize the distance (< 0.25") from the  
power-supply  
pins  
to  
high-frequency  
0.1µF  
decoupling capacitors. At the device pins, the ground  
and power-plane layout should not be in close  
proximity to the signal I/O pins. Avoid narrow power  
17  
BUF602  
www.ti.com  
SBOS339OCTOBER 2005  
INPUT AND ESD PROTECTION  
These diodes provide moderate protection to input  
overdrive voltages above the supplies as well. The  
protection diodes can typically support 30mA  
continuous current. Where higher currents are  
possible (for example, in systems with ±15V supply  
parts driving into the BUF602), current-limiting series  
resistors should be added into the two inputs. Keep  
these resistor values as low as possible since high  
values degrade both noise performance and  
frequency response.  
The BUF602 is built using  
a very high-speed  
complementary bipolar process. The internal junction  
breakdown voltages are relatively low for these very  
small geometry devices. These breakdowns are  
reflected in the Absolute Maximum Ratings table. All  
device pins are protected with internal ESD protection  
diodes to the power supplies as shown in Figure 34.  
+VCC  
External  
Pin  
Internal  
Circuitry  
VCC  
Figure 34. Internal ESD Protection  
18  
 
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Nov-2005  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
BUF602ID  
BUF602IDBVR  
BUF602IDBVT  
BUF602IDR  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOIC  
D
8
5
5
8
75  
TBD  
TBD  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
SOT-23  
SOT-23  
SOIC  
DBV  
DBV  
D
3000  
250  
2500  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan  
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS  
&
no Sb/Br)  
-
please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,  
enhancements, improvements, and other changes to its products and services at any time and to discontinue  
any product or service without notice. Customers should obtain the latest relevant information before placing  
orders and should verify that such information is current and complete. All products are sold subject to TI’s terms  
and conditions of sale supplied at the time of order acknowledgment.  
TI warrants performance of its hardware products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI  
deems necessary to support this warranty. Except where mandated by government requirements, testing of all  
parameters of each product is not necessarily performed.  
TI assumes no liability for applications assistance or customer product design. Customers are responsible for  
their products and applications using TI components. To minimize the risks associated with customer products  
and applications, customers should provide adequate design and operating safeguards.  
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,  
copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process  
in which TI products or services are used. Information published by TI regarding third-party products or services  
does not constitute a license from TI to use such products or services or a warranty or endorsement thereof.  
Use of such information may require a license from a third party under the patents or other intellectual property  
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Resale of TI products or services with statements different from or beyond the parameters stated by TI for that  
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Following are URLs where you can obtain information on other Texas Instruments products and application  
solutions:  
Products  
Applications  
Audio  
Amplifiers  
amplifier.ti.com  
www.ti.com/audio  
Data Converters  
dataconverter.ti.com  
Automotive  
www.ti.com/automotive  
DSP  
dsp.ti.com  
Broadband  
Digital Control  
Military  
www.ti.com/broadband  
www.ti.com/digitalcontrol  
www.ti.com/military  
Interface  
Logic  
interface.ti.com  
logic.ti.com  
Power Mgmt  
Microcontrollers  
power.ti.com  
Optical Networking  
Security  
www.ti.com/opticalnetwork  
www.ti.com/security  
www.ti.com/telephony  
www.ti.com/video  
microcontroller.ti.com  
Telephony  
Video & Imaging  
Wireless  
www.ti.com/wireless  
Mailing Address:  
Texas Instruments  
Post Office Box 655303 Dallas, Texas 75265  
Copyright 2005, Texas Instruments Incorporated  
配单直通车
BUF602IDBVT产品参数
型号:BUF602IDBVT
Brand Name:Texas Instruments
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
零件包装代码:SOT-23
包装说明:SOT-23, 5 PIN
针数:5
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8542.39.00.01
风险等级:0.99
放大器类型:BUFFER
最大平均偏置电流 (IIB):8.5 µA
标称带宽 (3dB):1000 MHz
最大输入失调电压:30000 µV
JESD-30 代码:R-PDSO-G5
JESD-609代码:e4
长度:2.9 mm
湿度敏感等级:2
负供电电压上限:-6.5 V
标称负供电电压 (Vsup):-5 V
功能数量:1
端子数量:5
最高工作温度:85 °C
最低工作温度:-40 °C
最小输出电流:0.048 A
封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260
认证状态:Not Qualified
座面最大高度:1.45 mm
标称压摆率:8000 V/us
子类别:Operational Amplifier
最大压摆率:5.8 mA
供电电压上限:6.5 V
标称供电电压 (Vsup):5 V
表面贴装:YES
技术:BIPOLAR
温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING
端子节距:0.95 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:1000000 kHz
宽度:1.6 mm
Base Number Matches:1
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