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产品型号BUK7226-75A/T3的Datasheet PDF文件预览

BUK7226-75A  
N-channel TrenchMOS standard level FET  
Rev. 02 — 22 February 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This  
product has been designed and qualified to the appropriate AEC standard for use in  
automotive critical applications.  
1.2 Features  
„ 175 °C rated  
„ Q101 compliant  
„ Low on-state resistance  
„ Standard level compatible  
1.3 Applications  
„ 12 V, 24 V and 42 V loads  
„ Automotive systems  
„ General purpose power switching  
„ Motors, lamps and solenoids  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VDS  
ID  
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
-
-
-
-
75  
45  
V
A
[1]  
VGS = 10 V; Tmb = 25 °C;  
see Figure 1 and 4  
Ptot  
Tj  
total power dissipation Tmb = 25 °C; see Figure 2  
-
-
-
158  
W
junction temperature  
-55  
175 °C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A;  
Tj = 25 °C; see Figure 12 and  
13  
-
-
22  
26  
mΩ  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
ID = 45 A; Vsup 75 V;  
-
215 mJ  
drain-sourceavalanche RGS = 50 Ω; VGS = 10 V;  
energy  
Tj(init) = 25 °C; unclamped  
inductive load  
[1] Capped at 45 A due to bondwire.  
 
 
 
 
 
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
G
D
S
D
gate  
D
mb  
2
drain  
source  
3
G
mb  
mounting base;  
mbb076  
S
connected to drain  
2
1
3
SOT428 (DPAK)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK7226-75A  
DPAK  
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead SOT428  
cropped)  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
75  
Unit  
V
VDS  
VDGR  
VGS  
ID  
drain-source voltage  
Tj 25 °C; Tj 175 °C  
RGS = 20 kΩ  
-
drain-gate voltage  
gate-source voltage  
drain current  
-
75  
V
-20  
20  
V
[1]  
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 4  
Tmb = 100 °C; VGS = 10 V; see Figure 1  
Tmb = 25 °C; tp 10 μs; pulsed; see Figure 4  
Tmb = 25 °C; see Figure 2  
-
45  
A
-
38  
A
IDM  
Ptot  
Tstg  
Tj  
peak drain current  
-
215  
158  
175  
175  
A
total power dissipation  
storage temperature  
junction temperature  
-
W
°C  
°C  
-55  
-55  
Avalanche ruggedness  
EDS(AL)S non-repetitive  
ID = 45 A; Vsup 75 V; RGS = 50 Ω;  
VGS = 10 V; Tj(init) = 25 °C; unclamped  
inductive load  
-
-
215  
-
mJ  
J
drain-source avalanche  
energy  
[2][3]  
[4]  
EDS(AL)R repetitive drain-source  
avalanche energy  
see Figure 3  
Source-drain diode  
[1]  
IS  
source current  
Tmb = 25 °C  
-
-
45  
A
A
ISM  
peak source current  
tp 10 μs; pulsed; Tmb = 25 °C  
215  
[1] Capped at 45 A due to bondwire.  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
2 of 13  
 
 
 
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.  
[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.  
[4] Refer to application note AN10273 for further information.  
03aa16  
003aac178  
120  
60  
ID  
(A)  
Pder  
(%)  
(1)  
80  
40  
0
40  
20  
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Tmb ( C)  
°
T
mb (°C)  
P
tot  
V
• 10V  
GS  
P
=
× 100 %  
der  
P
(
)
tot 25°C  
(1) Capped at 45 A due to bondwire.  
Fig 1. Continuous drain current as a function of  
mounting base temperature  
Fig 2. Normalized total power dissipation as a  
function of mounting base temperature  
003aac181  
102  
IAV  
(1)  
(A)  
10  
(2)  
(3)  
1
10-1  
10-3  
10-2  
10-1  
1
10  
tAV (ms)  
(1) Singleípulse;T = 25 °C.  
j
(2) Singleípulse;T = 150 °C.  
j
(3) Repetitive.  
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
3 of 13  
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
003aac179  
103  
ID  
10 μs  
Limit RDSon = VDS / ID  
(A)  
102  
(1)  
100 μs  
1 ms  
10  
1
10 ms  
100 ms  
DC  
10-1  
1
10  
102  
103  
VDS (V)  
T
= 25 °C; I  
is single pulse  
mb  
DM  
(1) Capped at 45 A due to bondwire.  
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance  
from junction to  
ambient  
minimum footprint; FR4 board  
-
70  
-
K/W  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
see Figure 5  
-
-
1
K/W  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
4 of 13  
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
003aac180  
1
δ = 0.5  
Zth(j-mb)  
(K/W)  
0.2  
0.1  
10-1  
0.05  
0.02  
tp  
P
δ =  
10-2  
T
single shot  
t
tp  
T
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
tp (s)  
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
ID = 0.25 mA; VGS = 0 V;  
Tj = -55 °C  
70  
75  
1
-
-
V
V
V
V
V
ID = 0.25 mA; VGS = 0 V;  
Tj = 25 °C  
-
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS = VGS  
;
-
-
voltage Tj = 175 °C; see Figure 11  
ID = 1 mA; VDS = VGS; Tj = 25 °C;  
see Figure 11  
2
3
-
4
ID = 1 mA; VDS = VGS  
;
-
4.4  
Tj = -55 °C; see Figure 11  
IDSS  
drain leakage current VDS = 75 V; VGS = 0 V; Tj = 25 °C  
-
-
0.05  
-
10  
μA  
μA  
VDS = 75 V; VGS = 0 V;  
500  
Tj = 175 °C  
IGSS  
gate leakage current VDS = 0 V; VGS = 20 V; Tj = 25 °C  
-
-
2
2
100  
100  
nA  
nA  
VDS = 0 V; VGS = -20 V;  
Tj = 25 °C  
RDSon  
drain-source on-state VGS = 10 V; ID = 25 A;  
-
-
-
54  
26  
mΩ  
mΩ  
resistance  
Tj = 175 °C; see Figure 12 and  
13  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
22  
see Figure 12 and 13  
Source-drain diode  
VSD  
source-drain voltage  
IS = 25 A; VGS = 0 V; Tj = 25 °C;  
-
0.85  
1.2  
V
see Figure 16  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
5 of 13  
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
Table 6.  
Symbol  
trr  
Characteristics …continued  
Parameter Conditions  
Min  
Typ  
53  
Max  
Unit  
ns  
reverse recovery time IS = 20 A; dIS/dt = -100 A/μs;  
-
-
-
-
VGS = -10 V; VDS = 30 V;  
Tj = 25 °C  
Qr  
recovered charge  
144  
nC  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
ID = 25 A; VDS = 60 V;  
GS = 10 V; see Figure 14  
-
-
-
-
-
-
48  
-
nC  
nC  
nC  
pF  
pF  
pF  
V
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
7.5  
-
17  
-
VGS = 0 V; VDS = 25 V;  
f = 1 MHz; Tj = 25 °C;  
see Figure 15  
1789  
382  
219  
2385  
458  
300  
Coss  
Crss  
reverse transfer  
capacitance  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 30 V; RL = 1.2 Ω;  
VGS = 10 V; RG(ext) = 10 Ω;  
Tj = 25 °C  
-
-
-
-
-
14  
66  
61  
41  
2.5  
-
-
-
-
-
ns  
ns  
ns  
ns  
nH  
turn-off delay time  
fall time  
LD  
internal drain  
inductance  
measured from drain lead from  
package to center of die;  
Tj = 25 °C  
LS  
internal source  
inductance  
measured from source lead from  
package to source bond pad;  
Tj = 25 °C  
-
7.5  
-
nH  
03nb06  
03nb05  
200  
28  
V
GS  
(V) = 20  
I
D
R
(mΩ)  
DSon  
(A)  
10  
9
160  
24  
8
7
120  
80  
40  
0
20  
16  
12  
6
5
0
2
4
6
8
10  
(V)  
5
10  
15  
20  
V
DS  
V
GS  
(V)  
T = 25 °C; t = 300 ȝs  
T = 25 °C; I = 25 A  
j D  
j
p
Fig 6. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 7. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
6 of 13  
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
03nb03  
03aa35  
1  
40  
10  
I
D
g
(S)  
fs  
(A)  
min  
typ  
max  
2  
3  
4  
5  
6  
10  
30  
10  
10  
10  
10  
20  
10  
0
0
20  
40  
60  
80  
0
2
4
6
I
D
(A)  
V
GS  
(V)  
T = 25 °C;V = V  
T = 25 °C;V = 25V  
j DS  
j
DS  
GS  
Fig 8. Sub-threshold drain current as a function of  
gate-source voltage  
Fig 9. Forward transconductance as a function of  
drain current; typical values  
03aa32  
03nb04  
5
50  
V
I
GS(th)  
(V)  
D
(A)  
4
40  
max  
3
30  
20  
typ  
2
min  
T = 175 °C  
j
1
0
10  
0
T = 25 °C  
j
60  
0
60  
120  
180  
0
2
4
6
T (°C)  
j
V
GS  
(V)  
V
= 25V  
I = 1 mA;V = V  
D DS GS  
DS  
Fig 10. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 11. Gate-source threshold voltage as a function of  
junction temperature  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
7 of 13  
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
03nb07  
03nb25  
60  
2.4  
1.6  
0.8  
0
6
7
8
9 10  
R
DSon  
(mΩ)  
V
(V) = 5  
a
GS  
50  
40  
30  
20  
10  
0
50  
100  
150  
200  
60  
0
60  
120  
180  
T (°C)  
I
(A)  
j
D
R
DSon  
T = 25 °C  
j
a =  
R
(
)
DSon 25°C  
Fig 12. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 13. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
03nb02  
03nb08  
10  
3000  
V
GS  
(V)  
C
(pF)  
8
6
4
2
0
C
iss  
2000  
1000  
0
V
DS  
= 14 V  
V
DS  
= 60 V  
C
oss  
C
rss  
2  
1  
2
0
20  
40  
60  
10  
10  
1
10  
10  
Q
(nC)  
V
DS  
(V)  
G
T = 25 °C; I = 25 A  
V
= 0V; f = 1 MHz  
j
D
GS  
Fig 14. Gate-source voltage as a function of turn-on  
gate charge; typical values  
Fig 15. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
8 of 13  
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
03nb01  
80  
I
S
(A)  
60  
40  
20  
0
T = 175 °C  
j
T = 25 °C  
j
0
0.4  
0.8  
1.2  
V
SD  
(V)  
V
= 0V  
GS  
Fig 16. Reverse diode current; typical values  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
9 of 13  
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
7. Package outline  
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)  
SOT428  
y
E
A
A
A
1
b
2
E
1
mounting  
base  
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
y
max  
D
min  
E
min  
L
1
min  
2
1
UNIT  
A
A
b
b
b
2
c
D
E
e
e
1
H
D
L
L
2
w
1
1
1
2.38  
2.22  
0.93  
0.46  
0.89  
0.71  
1.1  
0.9  
5.46  
5.00  
0.56  
0.20  
6.22  
5.98  
6.73  
6.47  
10.4  
9.6  
2.95  
2.55  
0.9  
0.5  
4.0  
4.45  
0.5  
mm  
2.285 4.57  
0.2  
0.2  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
06-02-14  
06-03-16  
SOT428  
SC-63  
TO-252  
Fig 17. Package outline SOT428 (DPAK)  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
10 of 13  
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
8. Revision history  
Table 7.  
Revision history  
Document ID  
BUK7226-75A_2  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20080222  
Product data sheet  
-
BUK7226_75A-01  
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
BUK7226_75A-01  
20001009  
Product specification; initial version  
-
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
11 of 13  
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
9. Legal information  
9.1  
Data sheet status  
Document status[1][2]  
Product status[3]  
Definition  
Objective [short] data sheet  
Development  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
9.2  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
9.3  
Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
9.4  
Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
TrenchMOS — is a trademark of NXP B.V.  
10. Contact information  
For additional information, please visit: http://www.nxp.com  
For sales office addresses, send an email to: salesaddresses@nxp.com  
BUK7226-75A_2  
© NXP B.V. 2008. All rights reserved.  
Product data sheet  
Rev. 02 — 22 February 2008  
12 of 13  
 
 
 
 
 
 
BUK7226-75A  
NXP Semiconductors  
N-channel TrenchMOS standard level FET  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
9.1  
9.2  
9.3  
9.4  
10  
11  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2008.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 22 February 2008  
Document identifier: BUK7226-75A_2  
 
配单直通车
BUK7226-75A,118产品参数
型号:BUK7226-75A,118
Brand Name:Nexperia
生命周期:Obsolete
IHS 制造商:NEXPERIA
零件包装代码:DPAK
包装说明:SC-63, DPAK-3
针数:3
制造商包装代码:SOT428
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8541.29.00.75
风险等级:5.3
雪崩能效等级(Eas):215 mJ
外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):45 A
最大漏极电流 (ID):45 A
最大漏源导通电阻:0.026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:2
工作模式:ENHANCEMENT MODE
最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):158 W
最大脉冲漏极电流 (IDM):215 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:YES
端子面层:Tin (Sn)
端子形式:GULL WING
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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