Philips Semiconductors
Product specification
Damper diode
BY448
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack.
k
a
2/3 page (Datasheet)
MAM047
APPLICATIONS
• Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
1650
1650
1500
4
UNIT
VRSM
VRRM
VR
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
−
−
−
−
V
V
V
A
IFWM
Tamb = 50 °C; PCB mounting
(see Fig 4); see Fig.2
IFRM
IFSM
repetitive peak forward current
−
−
8
A
A
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
30
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
1.45
1.60
150
1
UNIT
VF
IF = 3 A; Tj = Tj max; see Fig.3
IF = 3 A; see Fig.3
V
V
IR
trr
reverse current
VR = VRmax; Tj = 150 °C
µA
µs
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.6
tfr
forward recovery time
when switched to IF = 4 A in 50 ns;
Tj = Tj max; see Fig.7
1
µs
1996 Sep 26
2