欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
更多
  • BY458G图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BY458G 现货库存
  • 数量26980 
  • 厂家VISHAY 
  • 封装DO-15(SOD57) 
  • 批号全新环保批次 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • BY458G图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BY458G
  • 数量26980 
  • 厂家VISHAY 
  • 封装DO-15(SOD57) 
  • 批号全新环保批次 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310

产品型号BY458TAP的Datasheet PDF文件预览

BY448.BY458  
Vishay Telefunken  
Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Applications  
94 9539  
High voltage rectifier  
Efficiency diode in horizontal deflection circuits  
Absolute Maximum Ratings  
T = 25 C  
j
Parameters  
Reverse voltage  
Test Conditions  
Type  
BY448  
BY458  
Symbol  
Value  
1500  
1200  
30  
Unit  
V
V
V
R
V
R
Peak forward surge current  
t =10ms,  
I
A
p
FSM  
half sinewave  
Average forward current  
Junction temperature  
Storage temperature range  
I
2
140  
–55...+150  
A
C
C
FAV  
T
j
T
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board with spacing 25mm  
Symbol  
Value  
100  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
I =3A  
V
1.6  
3
140  
20  
V
A
A
s
F
F
V =V  
I
I
R
RSM  
R
V =V  
, T =140 C  
R
RSM  
j
R
Total reverse recovery time I =1A, d /d =0.05A/ s  
t
rr  
F
iF  
t
Document Number 86006  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  
BY448.BY458  
Vishay Telefunken  
Characteristics (Tj = 25 C unless otherwise specified)  
120  
100  
80  
60  
40  
20  
0
100  
l
l
T =25°C  
j
10  
Scattering Limit  
T =constant  
L
1
0.1  
0.01  
30  
3.0  
0
5
10  
15  
20  
25  
0
0.6  
1.2  
V – Forward Voltage ( V )  
F
1.8  
2.4  
94 9101  
l – Lead Length ( mm )  
94 9157  
Figure 3. Forward Current vs. Forward Voltage  
Figure 1. Typ. Thermal Resistance vs. Lead Length  
1000  
Scattering Limit  
100  
10  
1
V =V  
R
R RM  
0.1  
200  
0
40  
80  
120  
160  
94 9082  
T – Junction Temperature ( °C )  
j
Figure 2. Reverse Current vs. Junction Temperature  
Dimensions in mm  
3.6 max.  
94 9538  
Sintered Glass Case  
SOD 57  
Weight max. 0.5g  
Cathode Identification  
technical drawings  
according to DIN  
specifications  
0.82 max.  
26 min.  
26 min.  
4.2 max.  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86006  
Rev. 2, 24-Jun-98  
2 (3)  
BY448.BY458  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 86006  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
3 (3)  
配单直通车
BY458HR产品参数
型号:BY458HR
是否Rohs认证: 不符合
生命周期:Active
包装说明:SOD-57, 2 PIN
Reach Compliance Code:unknown
风险等级:5.78
其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE
外壳连接:ISOLATED
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.6 V
JESD-30 代码:E-LALF-W2
JESD-609代码:e0
最大非重复峰值正向电流:30 A
元件数量:1
相数:1
端子数量:2
最高工作温度:140 °C
最大输出电流:2 A
封装主体材料:GLASS
封装形状:ELLIPTICAL
封装形式:LONG FORM
参考标准:MIL-19500
最大重复峰值反向电压:1200 V
最大反向电流:3 µA
最大反向恢复时间:20 µs
反向测试电压:1200 V
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE
端子位置:AXIAL
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!