BY559供应商报价哪里找芯片批发报价原理和应用中文资料-中国IC网-芯三七

Philips Semiconductors

Objective specification

Rectifier diode

fast, high-voltage

BY559-1500

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 1500 V

• Low forward volt drop

• Low forward recovery voltage

• Fast switching

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

V_F≤ 1.2 V

k

1

a

2

V_fr≤ 14 V

t_fr≤ 250 ns

I_F(AV)= 10 A

I_FSM≤ 100 A

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Glass-passivated double diffused

rectifierdiode featuringfastforward

recovery and low forward recovery

voltage. The device is intended for

use in multi-sync monitor horizontal

deflection circuits with maximum

scan rates from 82 kHz to 120 kHz.

DESCRIPTION

cathode

anode

cathode

tab

1

2

tab

The BY559 series is supplied in the

1

2

conventional

leaded

SOD59

(TO220AC) package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

V_RWM

I_FWM

I_FRM

Peak repetitive reverse voltage

-

1500

1300

10

150

180

200

V

A

Crest working reverse voltage

Peak working forward current

f = 120 kHz;

Peak repetitive forward current t = 100 µs

Peak non-repetitive forward

current

I_FSM

t = 10 ms

t = 8.3 ms

sinusoidal; T_j= 150 ˚C prior to

surge; with reapplied V_RWM(max)

T_stg

T_j

Storage temperature

Operating junction temperature

-40

-

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

mounting base

Thermal resistance junction to in free air

ambient

-

1.0

-

K/W

60

September 1998

1

Rev 1.100

Philips Semiconductors

Objective specification

Rectifier diode

fast, high-voltage

BY559-1500

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_F

I_R

Forward voltage

Reverse current

I_F= 10 A

-

1.0

1.25

0.9

0.5

2.0

V

I_F= 10 A; T_j= 125 ˚C

V_R= V_RWMmax

0.79

V

-

mA

V_R= V_RWMmax; T_j= 125 ˚C

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_fr

t_fr

Forward recovery voltage

Forward recovery time

I_F= 10 A; dI_F/dt = 50 A/µs

-

7

11

350

600

1.0

5.0

V

I_F= 10 A; dI_F/dt = 50 A/µs; V_F= 5 V

I_F= 10 A; dI_F/dt = 50 A/µs; V_F= 2 V

I_F= 1 A; -dI_F/dt = 50 A/µs; V_R≥ 30 V

I_F= 2 A; -dI_F/dt = 20 A/µs; V_R≥ 30 V

250

450

0.75

4.0

ns

µs

µC

t_rr

Q_s

Reverse recovery time

Reverse recovery charge

September 1998

2

Rev 1.100

Philips Semiconductors

Objective specification

Rectifier diode

fast, high-voltage

BY559-1500

IF / A

I

20

15

10

5

F

Tj = 25 C

Tj = 125 C

max

10%

typ

time

tfr

V

F

V

fr

5V / 2V

time

V

0

F

0

0.2

0.4

0.6

VF / V

0.8

1

1.2

1.4

Fig.1. Definition of Vfr and tfr

Fig.4. Typical and maximum forward characteristic

I_F= f(V_F); parameter T_j

BY559-1500

Vfr / V

dI

F

25

20

15

10

5

I

F

dt

max

typ

trr

time

Qs

100%

25%

I

R

0

50

100

150

200

250

dIF/dt (A/us)

Fig.2. Definition of t_rrand Q_s

Fig.5. Typical and maximum V_fr= f(dI_F/dt); I_F= 10 A;

T_j= 25˚C

Transient thermal impedance, Zth j-mb (K/W)

10

VCC

1

Line output transformer

0.1

LY

p

t

p

t

P

0.01

D

D =

T

Cf

Cs

t

D1

deflection transistor

T

0.001

1us

10us 100us 1ms

10ms 100ms

1s

BY559

10s

pulse width, tp (s)

Fig.3. Basic horizontal deflection circuit.

Fig.6. Transient thermal impedance Z_th= f(t_p)

September 1998

3

Rev 1.100

Philips Semiconductors

Objective specification

Rectifier diode

fast, high-voltage

BY559-1500

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

max

(2x)

1

2

0,9 max (2x)

0,6

2,4

5,08

Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1998

4

Rev 1.100

型号:	BY559-1500
生命周期：	Obsolete
零件包装代码：	TO-220AC
包装说明：	PLASTIC PACKAGE-2
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.75
应用：	HIGH VOLTAGE FAST SOFT RECOVERY
外壳连接：	CATHODE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.9 V
JEDEC-95代码：	TO-220AC
JESD-30 代码：	R-PSFM-T2
最大非重复峰值正向电流：	200 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	150 °C
最大输出电流：	10 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
认证状态：	Not Qualified
最大重复峰值反向电压：	1500 V
最大反向恢复时间：	1 µs
子类别：	Rectifier Diodes
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
Base Number Matches：	1

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