欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
  •  
  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • BYT16PI-400
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
更多
  • BYT16PI-400图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • BYT16PI-400
  • 数量65000 
  • 厂家ST 
  • 封装TO-220 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495753QQ:2881495753 复制
  • 0755-23605827 QQ:2881495753
  • BYT16PI-400图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • BYT16PI-400
  • 数量10000 
  • 厂家ST 
  • 封装TO-220 
  • 批号21+ 
  • 全新原装原厂实力挺实单欢迎来撩
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871

产品型号BYT200的Datasheet PDF文件预览

BYT115/200/400  
Vishay Telefunken  
Ultra Fast Recovery Silicon Power Rectifier  
Features  
Multiple diffusion  
Epitaxial – planar  
Ultra fast forward recovery time  
Ultra fast reverse recovery time  
Low reverse current  
Very good reverse current stability at high tem-  
perature  
14282  
Low thermal resistance  
Applications  
Fast rectifiers in S.M.P.S  
Freewheeling diodes and snubber diodes in motor  
control circuits  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
100  
30  
Unit  
BYT115/200 V =V  
BYT115/400 V =V  
V
V
A
A
A
R
RRM  
RRM  
R
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
t =10ms  
p
I
FSM  
I
FRM  
I
15  
FAV  
Junction and storage  
temperature range  
T =T  
–55...+150  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction case  
Junction ambient  
Test Conditions  
Symbol  
Value  
1.75  
85  
Unit  
K/W  
K/W  
R
thJC  
R
thJA  
Rev. A2, 24-Jun-98  
1 (5)  
BYT115/200/400  
Vishay Telefunken  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =15A  
Type  
Symbol Min Typ Max Unit  
V
V
1.3  
1.2  
2
V
V
A
mA  
ns  
V
F
F
F
I =15A, T =100 C  
F
j
Reverse current  
V =V  
I
I
R
RRM  
R
V =V  
; T =100 C  
0.2  
R
RRM  
j
R
Forward recovery time  
Turn on transient peak  
voltage  
I =15A, di /dt 50A/ s  
t
fr  
350  
F
F
V
FP  
4
Reverse recovery  
characteristics  
I =15A, di /dt –150A/ s,  
I
12  
75  
140  
A
ns  
ns  
F
F
RM  
V =200V  
Batt  
t
IRM  
Reverse recovery time  
I =15A, di /dt –150A/ s,  
t
rr  
F
F
V =200V  
Batt  
I =0.5A, I =1A, i =0.25A  
BYT115/200  
BYT115/400  
t
t
35  
50  
ns  
ns  
F
R
R
rr  
rr  
Characteristics (Tj = 25 C unless otherwise specified)  
1000  
100  
10  
16  
12  
8
R
thJC  
=1.75K/W  
R
thJA  
=5K/W  
R
thJA  
=10K/W  
1
4
R
thJA  
=85K/W  
V =200/400V  
R
0.1  
0
200  
200  
0
40  
80  
120  
160  
0
40  
80  
120  
160  
94 9510  
T – Junction Temperature ( °C )  
j
94 9508  
T
amb  
– Ambient Temperature ( °C )  
Figure 1. Typ. Reverse Current vs. Junction Temperature  
Figure 2. Max. Average Forward Current vs. Ambient  
Temperature  
2 (5)  
Rev. A2, 24-Jun-98  
BYT115/200/400  
Vishay Telefunken  
100  
10  
20  
15  
10  
5
1
0.1  
0.01  
0
3.0  
350  
0
0.6  
1.2  
1.8  
2.4  
0
50 100 150 200 250 300  
94 9509  
V
– Forward Voltage ( V )  
94 9513  
–dI /dt – Forward Current Rate of Change ( A/ s )  
F
F
Figure 3. Typ. Forward Current vs. Forward Voltage  
Figure 6. Reverse Recovery Current vs.  
Forward Current Rate of Change  
1000  
800  
600  
400  
250  
200  
150  
100  
50  
0
dI /dt=150A/ s  
F
200  
0
21  
350  
0
3
6
9
12  
I – Forward Current ( A )  
F
15  
18  
0
50 100 150 200 250 300  
94 9515  
94 9512 –dI /dt – Forward Current Rate of Change ( A/ s )  
F
Figure 4. Reverse Recovery Charge vs.  
Forward Current  
Figure 7. Reverse Recovery Time vs.  
Forward Current Rate of Change  
160  
120  
80  
40  
0
1200  
1000  
800  
600  
400  
200  
0
350  
0
50 100 150 200 250 300  
350  
0
50 100 150 200 250 300  
94 9514 –dI /dt – Forward Current Rate of Change ( A/ s )  
94 9511  
–dI /dt – Forward Current Rate of Change ( A/ s )  
F
F
Figure 5. Reverse Recovery Time for I  
vs.  
Figure 8. Reverse Recovery Charge vs.  
Forward Current Rate of Change  
RM  
Forward Current Rate of Change  
Rev. A2, 24-Jun-98  
3 (5)  
BYT115/200/400  
Vishay Telefunken  
Dimensions in mm  
14276  
4 (5)  
Rev. A2, 24-Jun-98  
BYT115/200/400  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known  
as ozone depleting substances (ODSs).  
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand  
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized  
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out  
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Rev. A2, 24-Jun-98  
5 (5)  
配单直通车
BYT200产品参数
型号:BYT200
是否Rohs认证: 不符合
生命周期:Transferred
Reach Compliance Code:unknown
风险等级:5.84
配置:SINGLE
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 V
JESD-609代码:e0
最大非重复峰值正向电流:100 A
元件数量:1
最高工作温度:150 °C
最大输出电流:8 A
最大重复峰值反向电压:200 V
子类别:Rectifier Diodes
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!