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产品型号BYT51的Datasheet PDF文件预览

BYT51.  
Vishay Telefunken  
Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Low reverse current  
Applications  
94 9539  
Rectifiers  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
50  
Unit  
V
V
V
V
V
V
V
A
BYT51A  
BYT51B  
BYT51D  
BYT51G  
BYT51J  
BYT51K  
BYT51M  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
100  
200  
400  
600  
800  
1000  
50  
R
V =V  
R
V =V  
R
V =V  
R
V =V  
R
V =V  
R
Peak forward surge current  
t =10ms,  
I
p
FSM  
half sinewave  
Repetitive peak forward current  
Average forward current  
I
I
I
9
1
A
A
A
C
FRM  
on PC board  
FAV  
FAV  
l=10mm, T =30 C  
1.5  
–65...+175  
L
Junction and storage  
temperature range  
T =T  
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=10mm, T =constant  
on PC board with spacing 25mm  
Symbol  
Value  
45  
100  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
Document Number 86028  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  
BYT51.  
Vishay Telefunken  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
I =1A  
V
V
0.95 1.1  
V
V
A
A
s
F
F
F
I =1A, T =175 C  
1.0  
1
100  
4
F
j
Reverse current  
V =V  
V =V  
R
I
I
R
RRM  
RRM  
R
, T =150 C  
j
R
Reverse recovery time I =0.5A, I =1A, i =0.25A  
t
rr  
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)  
120  
l
l
2.0  
1.6  
1.2  
0.8  
0.4  
0
V =V  
R
R RM  
100  
80  
60  
40  
20  
0
f
1kHz  
l=10mm  
T =constant  
L
30  
200  
0
5
10  
15  
20  
25  
0
40  
80  
120  
160  
94 9101  
l – Lead Length ( mm )  
94 9405  
T
amb  
– Ambient Temperature ( °C )  
Figure 1. Typ. Thermal Resistance vs. Lead Length  
Figure 3. Max. Average Forward Current vs.  
Ambient Temperature  
1000  
2.0  
V =V  
R
R RM  
f
1kHz  
100  
1.6  
1.2  
0.8  
0.4  
0
PC Board  
Scattering Limit  
10  
1
V =V  
R
R RM  
0.1  
200  
200  
0
40  
80  
120  
160  
0
40  
80  
120  
160  
94 9406  
T
amb  
– Ambient Temperature ( °C )  
94 9407  
T – Junction Temperature ( °C )  
j
Figure 2. Max. Average Forward Current vs. Ambient  
Temperature  
Figure 4. Reverse Current vs. Junction Temperature  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86028  
Rev. 3, 24-Jun-98  
2 (4)  
BYT51.  
Vishay Telefunken  
10  
1
50  
40  
30  
20  
10  
0
T =25°C  
j
Scattering Limit  
0.1  
0.01  
3.0  
0.1  
1.0  
V – Reverse Voltage ( V )  
R
10.0  
100.0  
0
0.6  
1.2  
1.8  
2.4  
15767  
94 9408  
V – Forward Voltage ( V )  
F
Figure 5. Forward Current vs. Forward Voltage  
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage  
Dimensions in mm  
3.6 max.  
94 9538  
Sintered Glass Case  
SOD 57  
Weight max. 0.5g  
Cathode Identification  
technical drawings  
according to DIN  
specifications  
0.82 max.  
26 min.  
26 min.  
4.2 max.  
Document Number 86028  
Rev. 3, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
3 (4)  
BYT51.  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86028  
Rev. 3, 24-Jun-98  
4 (4)  
配单直通车
BYT51A产品参数
型号:BYT51A
是否Rohs认证: 不符合
生命周期:Transferred
IHS 制造商:TELEFUNKEN MICROELECTRONICS GMBH
Reach Compliance Code:unknown
风险等级:5.69
Is Samacsys:N
配置:SINGLE
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 V
JESD-609代码:e0
元件数量:1
最高工作温度:175 °C
最大输出电流:1 A
最大重复峰值反向电压:50 V
最大反向恢复时间:4 µs
子类别:Rectifier Diodes
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1
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