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    产品型号BYT60P-1000的Datasheet PDF文件预览

    BYT60P-1000  
    BYT261PIV-1000  
    FAST RECOVERY RECTIFIER DIODES  
    K2  
    A2  
    MAJOR PRODUCT CHARACTERISTICS  
    IF(AV)  
    VRRM  
    2 x 60 A  
    1000 V  
    1.8 V  
    K1  
    A1  
    VF (max)  
    trr (max)  
    BYT261PIV-1000  
    70 ns  
    FEATURES AND BENEFITS  
    VERY LOW REVERSE RECOVERY TIME  
    VERY LOW SWITCHING LOSSES  
    LOW NOISE TURN-OFF SWITCHING  
    INSULATEDPACKAGE: ISOTOP  
    Insulationvoltage: 2500 VRMS  
    Capacitance= 45 pF  
    ISOTOPTM  
    (Plastic)  
    Inductance< 5 nH  
    DESCRIPTION  
    Dual or high single voltage rectifier devices suited  
    for Switch Mode Power Supplies and other power  
    converters.  
    These devices are packaged in ISOTOP or in  
    SOD93.  
    A
    K
    SOD93  
    (Plastic)  
    ABSOLUTE RATINGS  
    Symbol  
    (limiting values, per diode)  
    Parameter  
    Value  
    Unit  
    VRRM  
    1000  
    V
    Repetitivepeak reverse voltage  
    IFRM  
    1000  
    140  
    100  
    60  
    A
    A
    Repetitivepeak forward current  
    RMS forward current  
    tp=5 µs F=1kHz  
    ISOTOP  
    IF(RMS)  
    SOD93  
    IF(AV)  
    A
    Average forward current  
    δ = 0.5  
    Tc = 50°C  
    Tc = 60°C  
    ISOTOP  
    SOD93  
    60  
    IFSM  
    Tstg  
    Tj  
    400  
    A
    Surge non repetitiveforward current  
    Storage temperaturerange  
    tp = 10 ms Sinusoidal  
    - 40 to + 150  
    150  
    °C  
    °C  
    Maximum operating junction temperature  
    TM: ISOTOP is a registeredtrademark of STMicroelectronics.  
    October 1999 - Ed: 4B  
    1/7  
    BYT60P-1000 / BYT261PIV-1000  
    THERMAL RESISTANCES  
    Symbol  
    Parameter  
    Value  
    Unit  
    Rth(j-c)  
    0.8  
    0.45  
    °C/W  
    Junction to case  
    ISOTOP  
    SOD93  
    Per diode  
    Total  
    0.7  
    0.1  
    Total  
    Rth(c)  
    °C/W  
    Coupling  
    When the diodes 1 and 2 are used simultaneously:  
    ∆ Tj(diode1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)  
    STATIC ELECTRICAL CHARACTERISTICS (per diode)  
    Symbol  
    Parameter  
    Test Conditions  
    Min. Typ. Max.  
    Unit  
    VF *  
    1.9  
    V
    Forward voltage drop Tj = 25°C  
    Tj = 100°C  
    IF = 60 A  
    1.8  
    100  
    6
    IR **  
    µA  
    Reverse leakage  
    current  
    Tj = 25°C  
    VR = VRRM  
    mA  
    Tj = 100°C  
    Pulse test : * tp = 380 s, < 2%  
    µ
    δ
    ** tp = 5 ms, < 2%  
    δ
    To evaluate the conduction losses use the following equation:  
    2
    P = 1.47 x IF(AV) + 0.005 IF (RMS)  
    RECOVERY CHARACTERISTICS (per diode)  
    Symbol  
    Test Conditions  
    Min.  
    Typ. Max. Unit  
    trr  
    170  
    ns  
    Tj = 25°C  
    IF = 1A VR = 30V dIF/dt = - 15A/µs  
    IF = 0.5A IR = 1A Irr = 0.25A  
    70  
    TURN-OFF SWITCHING CHARACTERISTICS  
    Symbol  
    Parameter  
    Test Conditions  
    Min. Typ. Max. Unit  
    tIRM  
    200 ns  
    Maximum reverse  
    recovery time  
    dIF/dt = - 240 A/µs  
    dIF/dt = - 480 A/µs  
    dIF/dt = - 240 A/µs  
    dIF/dt = - 480 A/µs  
    VCC = 200 V  
    IF = 60 A  
    Lp ≤ 0.05 µH  
    Tj = 100°C  
    (see fig. 13)  
    120  
    IRM  
    40  
    A
    /
    Maximum reverse  
    recovery current  
    44  
    3.3 4.5  
    Turn-off overvoltage  
    coefficient  
    Tj = 100°C VCC = 200V  
    dIF/dt = - 60A/µs  
    (see fig. 14)  
    IF = IF(AV)  
    Lp = 2.5µH  
    VRP  
    C =  
    VCC  
    2/7  
    BYT60P-1000 / BYT261PIV-1000  
    Fig. 1-1: Average forward power dissipation  
    versus average forward current (per diode,  
    ISOTOP).  
    Fig. 1-2: Average forward power dissipation  
    versus average forward current (SOD93).  
    PF(av)(W)  
    PF(av)(W)  
    130  
    130  
    δ = 0.1  
    δ = 0.2  
    δ = 0.5  
    δ = 0.5  
    δ = 0.2  
    120  
    110  
    100  
    90  
    80  
    70  
    60  
    50  
    40  
    30  
    20  
    10  
    0
    120  
    δ = 0.1  
    δ = 0.05  
    110  
    100  
    δ = 1  
    90  
    80  
    70  
    60  
    50  
    40  
    30  
    20  
    10  
    0
    δ = 1  
    δ = 0.05  
    T
    T
    tp  
    tp  
    =tp/T  
    δ
    =tp/T  
    δ
    IF(av) (A)  
    30 40  
    IF(av) (A)  
    30 40  
    0
    10  
    20  
    50  
    60  
    70  
    0
    10  
    20  
    50  
    60  
    70  
    Fig. 2-1:  
    Fig. 2-2:  
    Peak current versus form factor (per  
    Peakcurrentversus formfactor(SOD93).  
    diode, ISOTOP).  
    IM(A)  
    500  
    IM(A)  
    500  
    T
    T
    450  
    450  
    P=70W  
    400  
    400  
    350  
    300  
    250  
    200  
    150  
    100  
    50  
    350  
    tp  
    tp  
    =tp/T  
    δ
    =tp/T  
    δ
    P=70W  
    300  
    P=40W  
    P=40W  
    250  
    200  
    150  
    100  
    50  
    P=100W  
    P=100W  
    P=20W  
    P=20W  
    δ
    δ
    0
    0
    0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
    0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
    Fig. 3:  
    Average forward current versus ambient  
    temperature(δ=0.5, per diode for ISOTOP).  
    IF(av)(A)  
    70  
    Rth(j-a)=Rth(j-c)  
    60  
    SOD93  
    50  
    ISOTOP  
    40  
    Rth(j-a)=2.5°C/W  
    30  
    T
    20  
    10  
    Tamb(°C)  
    tp  
    =tp/T  
    δ
    0
    0
    25  
    50  
    75  
    100  
    125  
    150  
    3/7  
    BYT60P-1000 / BYT261PIV-1000  
    Fig. 4-1:  
    Fig. 4-2:  
    Nonrepetitive surgepeak forwardcurrent  
    versus overload duration (per diode, ISOTOP).  
    Nonrepetitive surgepeak forwardcurrent  
    versus overload duration (SOD93).  
    IM(A)  
    400  
    IM(A)  
    400  
    350  
    350  
    300  
    250  
    300  
    250  
    200  
    200  
    Tc=25°C  
    Tc=60°C  
    Tc=25°C  
    150  
    150  
    Tc=50°C  
    100  
    100  
    IM  
    IM  
    t
    t
    50  
    50  
    δ=0.5  
    δ=0.5  
    t(s)  
    t(s)  
    0
    0
    1E-3  
    1E-2  
    1E-1  
    1E+0  
    1E-3  
    1E-2  
    1E-1  
    1E+0  
    Fig. 5-2: Relative variation of thermal impedance  
    junction to case versus pulse duration(SOD93).  
    Fig. 5-1: Relative variation of thermal impedance  
    junction to case versus pulse duration (per diode,  
    ISOTOP).  
    K=[Zth(j-c)/Rth(j-c)]  
    K=[Zth(j-c)/Rth(j-c)]  
    1.0  
    1.0  
    δ = 0.5  
    δ = 0.5  
    0.5  
    0.5  
    δ = 0.2  
    δ = 0.1  
    δ = 0.2  
    T
    T
    δ = 0.1  
    0.2  
    0.1  
    0.2  
    Single pulse  
    Single pulse  
    tp  
    tp  
    =tp/T  
    δ
    =tp/T  
    δ
    tp(s)  
    tp(s)  
    0.1  
    1E-3  
    1E-2  
    1E-1  
    1E+0  
    1E-3  
    1E-2  
    1E-1  
    1E+0  
    Fig. 6: Forward voltage drop versus forward  
    current (maximum values, per diode for ISOTOP).  
    Fig. 7: Junctioncapacitanceversusreverse voltage  
    applied(typical values, per diode for ISOTOP).  
    IFM(A)  
    C(pF)  
    500  
    100  
    F=1MHz  
    Tj=25°C  
    Typical values  
    Tj=100°C  
    80  
    60  
    40  
    20  
    100  
    Tj=25°C  
    10  
    Tj=100°C  
    VR(V)  
    VFM(V)  
    0
    1
    1
    10  
    100 200  
    0.0  
    0.5  
    1.0  
    1.5  
    2.0  
    2.5  
    3.0  
    3.5  
    4.0  
    4/7  
    BYT60P-1000 / BYT261PIV-1000  
    Fig. 8:  
    for ISOTOP).  
    Fig. 9:  
    Recovery current versus dIF/dt (per diode  
    for ISOTOP).  
    Recoverycharges versus dIF/dt (per diode  
    Qrr(µC)  
    IRM(A)  
    10  
    IF=IF(av)  
    90% confidence  
    Tj=100°C  
    80  
    IF=IF(av)  
    90% confidence  
    Tj=100°C  
    70  
    8
    60  
    50  
    40  
    30  
    20  
    10  
    0
    6
    4
    2
    0
    dIF/dt(A/µs)  
    50 100  
    dIF/dt(A/µs)  
    50 100  
    10  
    20  
    200  
    500  
    10  
    20  
    200  
    500  
    Fig. 11:  
    diode for ISOTOP).  
    Fig. 10: Transient peak forward voltage versus  
    dIF/dt (per diode for ISOTOP).  
    Forward recovery time versus dIF/dt (per  
    VFP(V)  
    tfr(µs)  
    45  
    1.50  
    IF=IF(av)  
    90% confidence  
    Tj=100°C  
    IF=IF(av)  
    90% confidence  
    Tj=100°C  
    40  
    1.25  
    1.00  
    0.75  
    0.50  
    0.25  
    0.00  
    35  
    30  
    25  
    20  
    15  
    10  
    5
    0
    dIF/dt(A/µs)  
    200 300  
    dIF/dt(A/µs)  
    200 300  
    0
    100  
    400  
    500  
    0
    100  
    400  
    500  
    Fig. 12: Dynamic parameters versus junction  
    temperature.  
    Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]  
    1.50  
    1.25  
    1.00  
    IRM  
    0.75  
    Qrr  
    0.50  
    Tj(°C)  
    0.25  
    0
    25  
    50  
    75  
    100  
    125  
    150  
    5/7  
    BYT60P-1000 / BYT261PIV-1000  
    Fig. 13: Turn-off switching characteristics (without  
    serie inductance).  
    Fig. 14: Turn-off switching characteristics (with  
    serie inductance).  
    IF  
    IF  
    DUT  
    DUT  
    diF/dt  
    diF/dt  
    LC  
    LC  
    LP  
    VCC  
    VCC  
    VF  
    VF  
    VCC  
    VRP  
    IRM  
    VCC  
    tI RM  
    PACKAGE MECHANICAL DATA  
    ISOTOP  
    DIMENSIONS  
    Millimeters Inches  
    REF.  
    Min.  
    Max.  
    Min.  
    Max.  
    A
    A1  
    B
    C
    C2  
    D
    11.80  
    8.90  
    7.8  
    0.75  
    1.95  
    37.80  
    31.50  
    25.15  
    23.85  
    12.20  
    9.10  
    8.20  
    0.85  
    2.05  
    38.20  
    31.70  
    25.50  
    24.15  
    0.465  
    0.350  
    0.307  
    0.030  
    0.077  
    1.488  
    1.240  
    0.990  
    0.939  
    0.480  
    0.358  
    0.323  
    0.033  
    0.081  
    1.504  
    1.248  
    1.004  
    0.951  
    D1  
    E
    E1  
    E2  
    G
    G1  
    G2  
    F
    F1  
    P
    P1  
    S
    24.80 typ.  
    0.976 typ.  
    14.90  
    12.60  
    3.50  
    4.10  
    4.60  
    4.00  
    4.00  
    30.10  
    15.10  
    12.80  
    4.30  
    4.30  
    5.00  
    4.30  
    4.40  
    30.30  
    0.587  
    0.496  
    0.138  
    0.161  
    0.181  
    0.157  
    0.157  
    1.185  
    0.594  
    0.504  
    0.169  
    0.169  
    0.197  
    0.69  
    0.173  
    1.193  
    6/7  
    BYT60P-1000 / BYT261PIV-1000  
    DIMENSIONS  
    PACKAGE MECHANICAL DATA  
    SOD93 Plastic  
    REF.  
    Millimeters  
    Inches  
    Min. Typ. Max. Min. Typ. Max.  
    A
    C
    D
    D1  
    E
    F
    4.70  
    1.17  
    4.90 0.185  
    1.37 0.046  
    0.193  
    0.054  
    2.50  
    1.27  
    0.098  
    0.050  
    0.50  
    1.10  
    0.78 0.020  
    1.30 0.043  
    0.031  
    0.051  
    F3  
    G
    H
    L
    L2  
    L3  
    L5 3.95  
    L6  
    O
    1.75  
    0.069  
    10.80  
    14.70  
    11.10 0.425  
    15.20 0.578  
    12.20  
    0.437  
    0.598  
    0.480  
    0.638  
    16.20  
    18.0  
    0.709  
    1.220  
    4.15 0.156  
    4.10 0.157  
    0.163  
    0.161  
    31.00  
    4.00  
    Delivery  
    mode  
    Orderingtype  
    Marking  
    Package  
    Weight  
    Base qty  
    BYT60P-1000  
    BYT60P-1000  
    SOD93  
    3.79 g.  
    30  
    10  
    Tube  
    Tube  
    BYT261PIV-1000 BYT261PIV-1000 ISOTOP  
    Cooling method: by conduction(C)  
    28 g. (without screws)  
    Recommended torque value (ISOTOP): 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws  
    recommended for mounting the package on the heatsink and the 4 screws given with the screw ver-  
    sion).The screws supplied with the package are adapted for mounting on a board (or other types of  
    terminals)with a thicknessof 0.6 mm min and 2.2 mm max.  
    Recommended torque value (SOD93): 0.8 N.m.  
    Maximum torque value (SOD93): 1.0 N.m.  
    Epoxymeets UL94,V0  
    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
    use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by  
    implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
    change without notice. This publication supersedes and replaces all information previously supplied.  
    STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
    proval of STMicroelectronics.  
    The ST logo is a registered trademark of STMicroelectronics  
    1999 STMicroelectronics - Printed inItaly - All rights reserved.  
    STMicroelectronics GROUP OF COMPANIES  
    Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
    Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
    http://www.st.com  
    7/7  
    配单直通车
    BYT60P-1000产品参数
    型号:BYT60P-1000
    是否Rohs认证： 符合
    生命周期：Obsolete
    包装说明：PLASTIC PACKAGE-2
    针数：2
    Reach Compliance Code：not_compliant
    ECCN代码：EAR99
    HTS代码：8541.10.00.80
    风险等级：5.73
    应用：FAST RECOVERY
    配置：SINGLE
    二极管元件材料：SILICON
    二极管类型：RECTIFIER DIODE
    最大正向电压 (VF)：1.8 V
    JESD-30 代码：R-PSFM-T2
    JESD-609代码：e3
    最大非重复峰值正向电流：400 A
    元件数量：1
    相数：1
    端子数量：2
    最高工作温度：150 °C
    最大输出电流：60 A
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    峰值回流温度（摄氏度）：NOT SPECIFIED
    认证状态：Not Qualified
    最大重复峰值反向电压：1000 V
    最大反向恢复时间：0.17 µs
    子类别：Rectifier Diodes
    表面贴装：NO
    端子面层：Matte Tin (Sn)
    端子形式：THROUGH-HOLE
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    Base Number Matches：1
    •  
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