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  • 北京元坤伟业科技有限公司

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  • BYV25FX-600127
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产品型号BYV25G-600的Datasheet PDF文件预览

BYV25G-600  
Ultrafast rectifier diode  
Rev. 01 — 4 February 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package.  
1.2 Features and benefits  
„ Fast switching  
„ Low switching losses  
„ Low thermal resistance  
„ High thermal cycling performance  
„ Low forward voltage drop  
„ Soft recovery minimizes  
power-consuming oscillations  
„ Low profile package facilitates  
compact/slim designs  
1.3 Applications  
„ Discontinuous Current Mode (DCM)  
„ High frequency switched-mode power  
Power Factor Correction (PFC)  
supplies  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
VRRM repetitive peak reverse  
voltage  
average forward current square-wave pulse; δ = 0.5;  
mb 135 °C; see Figure 1  
Quick reference  
Conditions  
Min  
Typ  
Max Unit  
-
-
600  
V
IF(AV)  
-
-
-
5
A
T
and 2  
Dynamic characteristics  
trr  
reverse recovery time  
IF = 1 A; VR 30 V;  
dIF/dt = 100 A/µs; Tj = 25 °C;  
see Figure 5  
50  
60  
ns  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
2. Pinning information  
Table 2.  
Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
n.c.  
K
not connected  
cathode  
2
2
1
3
3
A
anode  
003aad550  
mb  
K
mounting base; cathode  
1
2
3
SOT226A (I2PAK)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
plastic single-ended package (I2PAK); TO-262  
Version  
SOT226A  
BYV25G-600  
I2PAK  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VRRM  
repetitive peak reverse  
voltage  
-
600  
V
VRWM  
crest working reverse  
voltage  
-
600  
V
VR  
reverse voltage  
Tmb 100 °C; DC  
-
-
600  
5
V
A
IF(AV)  
average forward  
current  
square-wave pulse; δ = 0.5; Tmb 135 °C; see Figure 1  
and 2  
IFRM  
IFSM  
repetitive peak forward square-wave pulse; δ = 0.5; Tmb 135 °C  
current  
-
10  
A
non-repetitive peak  
forward current  
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C  
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C  
-
66  
A
-
60  
A
Tstg  
Tj  
storage temperature  
junction temperature  
-40  
-
150  
150  
°C  
°C  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
2 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
003aac347  
003aac348  
10  
8
6
4
2
0
P
tot  
P
(W)  
tot  
(W)  
δ = 1  
8
6
4
2
0
a = 1.57  
1.9  
0.5  
2.2  
2.8  
0.2  
4.0  
0.1  
0
2
4
6
8
0
2
4
6
I
(A)  
F(AV)  
I
(A)  
F(AV)  
Fig 2. Forward power dissipation as a function of  
average forward current; sinusoidal waveform;  
maximum values  
Fig 1. Forward power dissipation as a function of  
average forward current; square waveform;  
maximum values  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
3 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-mb)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from junction to  
mounting base  
with heatsink compound;  
see Figure 3  
-
-
2.5  
K/W  
Rth(j-a)  
thermal resistance from junction to  
ambient free air  
-
60  
-
K/W  
001aag913  
10  
Z
th(j-mb)  
(K/W)  
1
t
1  
2  
3  
p
10  
10  
10  
P
δ =  
T
t
t
p
T
6  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
10  
1
10  
t
p
(s)  
Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
4 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
VF  
forward voltage  
IF = 5 A; see Figure 4  
IF = 5 A; Tmb 150 °C; see Figure 4  
VR = 600 V; Tj = 100 °C  
VR = 600 V  
-
-
-
-
1.12  
0.97  
0.1  
2
1.3  
V
1.11  
0.35  
50  
V
IR  
reverse current  
mA  
µA  
Dynamic characteristics  
Qr  
recovered charge  
IF = 2 A; VR 30 V; dIF/dt = 20 A/µs;  
see Figure 5  
-
-
-
-
40  
50  
3.2  
3
70  
60  
-
nC  
ns  
V
trr  
reverse recovery time  
IF = 1 A; VR 30 V; dIF/dt = 100 A/µs;  
Tj = 25 °C; see Figure 5  
VFR  
IRM  
forward recovery  
voltage  
IF = 10 A; dIF/dt = 10 A/µs; see Figure 6  
peak reverse recovery IF = 10 A; VR 30 V; dIF/dt = 50 A/µs;  
5.5  
A
current  
Tj = 100 °C; see Figure 5  
003aac232  
dl  
15  
10  
5
F
I
F
dt  
IF  
(A)  
t
rr  
time  
25 %  
(1)  
(2)  
(3)  
100 %  
Q
r
I
I
RM  
R
003aac562  
0
0
0.4  
0.8  
1.2  
1.6  
V
F (V)  
Fig 4. Forward current as a function of forward  
voltage  
Fig 5. Reverse recovery definitions; ramp recovery  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
5 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
I
F
time  
V
F
V
FRM  
V
F
time  
001aab912  
Fig 6. Forward recovery definitions  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
6 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
7. Package outline  
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262  
SOT226A  
A
A
1
E
D
1
D
L
1
Q
b
1
b
2
L
1
2
3
c
b
e
e
0
5
10 mm  
scale  
Dimensions  
Unit  
A
A
1
b
b
1
b
2
c
D
D
1
E
e
L
L
1
Q
max 4.7 1.40 0.95 1.40 1.7 0.65 9.4 1.32 10.30  
mm nom  
min 4.3 1.15 0.70 1.14 1.3 0.45 8.6 1.02 9.65  
15.0  
12.5  
2.6  
2.54  
(REF)  
3.0  
(REF)  
2.2  
sot226a_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
TO-262  
JEITA  
09-08-17  
09-08-25  
SOT226A  
Fig 7. Package outline SOT226A (I2PAK)  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
7 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
8. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BYV25G-600_1  
20100204  
Product data sheet  
-
-
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
8 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
9. Legal information  
9.1 Data sheet status  
Document status [1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
9.2 Definitions  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on a weakness or default in the  
customer application/use or the application/use of customer’s third party  
customer(s) (hereinafter both referred to as “Application”). It is customer’s  
sole responsibility to check whether the NXP Semiconductors product is  
suitable and fit for the Application planned. Customer has to do all necessary  
testing for the Application in order to avoid a default of the Application and the  
product. NXP Semiconductors does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
9.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
9 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
such automotive applications, use and specifications, and (b) whenever  
customer uses the product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at customer’s own  
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,  
damages or failed product claims resulting from customer design and use of  
the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless the data sheet of an NXP  
Semiconductors product expressly states that the product is automotive  
qualified, the product is not suitable for automotive use. It is neither qualified  
nor tested in accordance with automotive testing or application requirements.  
NXP Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications. In  
the event that customer uses the product for design-in and use in automotive  
applications to automotive specifications and standards, customer (a) shall  
use the product without NXP Semiconductors’ warranty of the product for  
9.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
10. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BYV25G-600_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 4 February 2010  
10 of 11  
BYV25G-600  
NXP Semiconductors  
Ultrafast rectifier diode  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Thermal characteristics . . . . . . . . . . . . . . . . . . .4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
9.1  
9.2  
9.3  
9.4  
10  
Contact information. . . . . . . . . . . . . . . . . . . . . .10  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 4 February 2010  
Document identifier: BYV25G-600_1  
配单直通车
BYV25G-600产品参数
型号:BYV25G-600
生命周期:Active
包装说明:TO-262, I2PAK-3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.80
风险等级:5.75
应用:ULTRA FAST SOFT RECOVERY
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3
JESD-609代码:e3
最大非重复峰值正向电流:66 A
元件数量:1
相数:1
端子数量:3
最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:IN-LINE
峰值回流温度(摄氏度):245
认证状态:Not Qualified
最大重复峰值反向电压:600 V
最大反向恢复时间:0.06 µs
表面贴装:NO
端子面层:TIN
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:30
Base Number Matches:1
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