BYV52P1200原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

BYV52/PI

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITED FOR SMPS

A1

A2

VERY LOW FORWARD LOSSES

NEGLIGIBLESWITCHING LOSSES

HIGH SURGE CURRENT CAPABILITY

HIGH AVALANCHEENERGY CAPABILITY

K

INSULATEDVERSIONTOP3I :

Insulatingvoltage = 2500 V DC

Capacitance = 12 pF

DESCRIPTION

Dual center tap rectifier suited for switchmode

power supply and high frequency DC to DC

converters.

Packaged in SOT93, or TOP3I this device is

intended for use in low voltage, high frequency

inverters, free wheeling and polarity protection

applications.

isolated

TOP3I

(Plastic)

SOT93

(Plastic)

BYV52-200

BYV52PI-200

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

I_F(RMS)

50

A

Per diode

Tc=110°C Per diode

RMS forward current

I_F(AV)

30

SOT93

TOP3I

Average forward current

δ = 0.5

Tc=90°C

Per diode

I_FSM

500

A

tp=10ms

Surge non repetitiveforward current

sinusoidal

Tstg

Tj

- 40 to + 150

°C

C

Storage and junction temperature range

°

Symbol

Parameter

Value

200

Unit

V_RRM

V

Repetitivepeak reverse voltage

October 1999

Ed : 2C

1/6

BYV52/PI

THERMAL RESISTANCE

Symbol

Parameter

Value

1.2

Unit

°

Rth (j-c)

C/W

SOT93

Per diode

Total

Junctionto case

0.75

1.8

TOP3I

Per diode

Total

1.2

Rth (c)

0.3

°C/W

SOT93

TOP3I

Coupling

0.6

When the diodes 1 and 2 are used simultaneously :

Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS (Per diode)

STATIC CHARACTERISTICS

Symbol

Test Conditions

Min. Typ. Max. Unit

µ

A

I_R*

25

T_j= 25°C

T_j= 100°C

T_j= 125°C

T_j= 25°C

V_R= V_RRM

2.5

mA

V

V_{F **}

0.85

1.00

1.15

I_F= 20 A

I_F= 40 A

Pulse test : * tp = 5 ms, duty cycle < 2 %

** tp = 380 s, duty cycle < 2 %

µ

To evaluate the conductionlosses use the following equation :

2

P = 0.7 x I_F(AV)+ 0.0075x I_{F (RMS)}

RECOVERY CHARACTERISTICS

Symbol

Test Conditions

Min. Typ. Max. Unit

°

trr

T_j= 25 C

I_F= 0.5A

I_R= 1A

Irr = 0.25A

dI_F/dt = -50A/µs

tr = 5 ns

35

ns

I_F= 1A

V_R= 30V

50

tfr

T_j= 25°C

I_F= 1A

V_FR= 1.1 x V_F

10

ns

V

V_FP

I_F= 1A

tr = 5 ns

1.5

2/6

BYV52/PI

Fig.1 : Average forward power dissipation versus

Fig.2 : Peak current versus form factor.

average forward current.

P

I

F(av)(W)

M(A)

40

500

450

T

=1

=0.5

=0.2

35

30

25

20

15

10

5

P=20W

400

=0.1

I

M

=0.05

350

=tp/T

300

250

200

150

100

50

tp

P=10W

T

P=30W

I

=tp/T

F(av)(A)

15

tp

0

5

10

20

25

30

35

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1

Fig.3 : Forward voltage drop versus forward

current (maximum values).

Fig.4 : Relative variation of thermal impedance

junction to case versus pulse duration.

K

1.0

VFM(V)

1.8

Zth(j-c) (tp.

K =

)

Rth(j-c)

1.6

Tj=125 ^o

C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

=0.5

0.5

=0.2

= 0.1

T

0.2

0.1

Single pulse

IFM(A)

10

=tp/T

tp

1.0E+00

tp(s)

0.1

1

100 300

1.0E-03

1.0E-02

1.0E-01

Fig.5 :

versus overload duration.

(SOD93)

Fig.6 :

Non repetitive surge peak forward current

versus overload duration.

(TOP3I)

Non repetitive surge peak forward current

I

M(A)

250

200

150

300

250

200

150

100

50

o

Tc=25

C

o

Tc=25

C

100

o

Tc=50

C

Tc=50

Tc=90

C

IM

o

50

C

t

o

Tc=110

C

t(s)

=0.5

0

0.001

0.01

0.1

1

0.001

0.01

0.1

1

3/6

BYV52/PI

Fig.7

temperature.

:

Fig.8

temperature.

:

Average current versus ambient

(duty cycle : 0.5) (SOD93)

(duty cycle : 0.5) (TOP3I)

I

F(av)(A)

=0.5

F(av)(A)

=0.5

35

30

25

20

15

10

5

35

30

25

20

15

10

5

Rth(j-a)=Rth(j-c)

T

=tp/T

tp

o

Rth(j-a)=15 C/W

o

Tamb( C)

0

20

40

60 80 100 120 140 160

0

20

40

60 80 100 120 140 160

Fig.9 : Junction capacitance versus reverse

voltage applied (Typical values).

Fig.10 : Recoverycharges versus dI_F/dt.

C(pF)

QRR(nC)

200

100

o

F=1Mhz Tj=25 C

190

90%CONFIDENCE

90

IF=IF(av)

80

180

170

160

150

140

130

120

70

O

Tj=100 C

60

50

40

O

Tj=25 C

30

20

10

0

110

VR(V)

dIF/dt(A/us)

100

1

10

100

200

1

10

100

Fig.11 :

Fig.12 :

temperature.

Peakreverse current versus dIF/dt.

Dynamic parameters versus junction

o

IRM(A)

QRR;IRM[Tj]/QRR;IRM[Tj=125 C]

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.50

1.25

1.00

0.75

0.50

0.25

0.00

90%CONFIDENCE

IF=IF(av)

O

Tj=100

C

IRM

QRR

O

Tj=25

C

_Tj(o_C)

dIF/dt(A/us)

20

0

25

50

75

100

125

150

1

10

100

4/6

BYV52/PI

PACKAGE MECHANICAL DATA

SOD93

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

REF.

A

C

4.70

1.17

4.90 0.185

1.37 0.046

0.193

0.054

D

2.50

1.27

0.098

0.050

D1

E

F

0.50

1.10

0.78 0.020

1.30 0.043

0.031

0.051

F3

G

H

1.75

0.069

10.80

14.70

11.10 0.425

15.20 0.578

12.20

0.437

0.598

0.480

0.638

L

L2

L3

16.20

18.0

0.709

1.220

L5 3.95

L6

O

4.15 0.156

4.10 0.157

0.163

0.161

31.00

4.00

Marking : Type number

Cooling method : C

Weight : 3.79 g

Recommended torque value : 0.8m.N

Maximum torque value : 1.0m.N

5/6

BYV52/PI

PACKAGE MECHANICAL DATA

TOP3I (isolated)

DIMENSIONS

Millimeters Inches

Min. Max.

REF.

Min.

4.4

Max.

4.6

A

B

C

D

E

F

0.173 0.181

0.057 0.061

1.45

1.55

14.35 15.60 0.565 0.614

0.5

2.7

0.7

0.020 0.028

0.106 0.114

0.622 0.650

0.815 0.831

0.594 0.610

0.213 0.222

0.134 0.144

0.161 0.164

0.047 0.055

0.181 typ.

2.9

15.8

20.4

15.1

5.4

16.5

21.1

15.5

5.65

3.65

4.17

1.40

G

H

J

K

L

3.4

4.08

1.20

P

R

4.60 typ.

Marking

: Type number

Cooling method : C

Weight : 4.46 g

Recommended torque value : 0.8m.N

Maximum torque value : 1.0m.N

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use ofsuch information nor for any infringementof patents or other rights of thirdparties which may result fromits use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written ap-

proval of STMicroelectronics.

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6/6

型号:	BYV52PI-100
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.84
Is Samacsys：	N
应用：	EFFICIENCY
外壳连接：	ISOLATED
配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1 V
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
最大非重复峰值正向电流：	500 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	150 °C
最低工作温度：	-40 °C
最大输出电流：	30 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
最大功率耗散：	45 W
认证状态：	Not Qualified
最大重复峰值反向电压：	100 V
最大反向电流：	25 µA
最大反向恢复时间：	0.05 µs
子类别：	Rectifier Diodes
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
Base Number Matches：	1

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