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    产品型号BYV95A/A52R的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BYV95 series  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    1996 Jun 07  
    Product specification  
    Supersedes data of April 1982  
    File under Discrete Semiconductors, SC01  
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    hermetically sealed and fatigue free  
    as coefficients of expansion of all  
    used parts are matched.  
    FEATURES  
    DESCRIPTION  
    • Glass passivated  
    Rugged glass SOD57 package,  
    using a high temperature alloyed  
    construction. This package is  
    • High maximum operating  
    temperature  
    • Low leakage current  
    • Excellent stability  
    k
    a
    • Guaranteed avalanche energy  
    absorption capability  
    MAM047  
    • Available in ammo-pack.  
    Fig.1 Simplified outline (SOD57) and symbol.  
    LIMITING VALUES  
    In accordance with the Absolute Maximum Rating System (IEC 134).  
    SYMBOL  
    PARAMETER  
    repetitive peak reverse voltage  
    BYV95A  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    VRRM  
    −
    −
    −
    200  
    400  
    600  
    V
    V
    V
    BYV95B  
    BYV95C  
    VR  
    continuous reverse voltage  
    BYV95A  
    −
    −
    −
    −
    200  
    400  
    600  
    1.5  
    V
    V
    V
    A
    BYV95B  
    BYV95C  
    IF(AV)  
    average forward current  
    Ttp = 65 °C; lead length = 10 mm  
    see Fig. 2;  
    averaged over any 20 ms period;  
    see also Fig. 6  
    T
    amb = 65 °C; PCB mounting (see  
    −
    0.8  
    A
    Fig.11); see Fig. 3;  
    averaged over any 20 ms period;  
    see also Fig. 6  
    IFRM  
    repetitive peak forward current  
    Ttp = 65 °C; see Fig. 4  
    Tamb = 65 °C; see Fig. 5  
    −
    −
    −
    17  
    9
    A
    A
    A
    IFSM  
    non-repetitive peak forward current  
    t = 10 ms half sine wave;  
    Tj = Tj max prior to surge;  
    VR = VRRMmax  
    35  
    ERSM  
    non-repetitive peak reverse  
    avalanche energy  
    L = 120 mH; Tj = Tj max prior to  
    surge; inductive load switched off  
    −
    10  
    mJ  
    Tstg  
    Tj  
    storage temperature  
    junction temperature  
    −65  
    −65  
    +175 °C  
    +175 °C  
    see Fig. 7  
    1996 Jun 07  
    2
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    ELECTRICAL CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    forward voltage  
    CONDITIONS  
    MIN.  
    TYP.  
    MAX.  
    UNIT  
    VF  
    IF = 3 A; Tj = Tj max; see Fig. 8  
    IF = 3 A; see Fig. 8  
    IR = 0.1 mA  
    −
    −
    −
    −
    1.35  
    1.60  
    V
    V
    V(BR)R  
    reverse avalanche  
    breakdown voltage  
    BYV95A  
    BYV95B  
    300  
    500  
    700  
    −
    −
    −
    −
    −
    −
    −
    −
    1
    V
    V
    V
    BYV95C  
    IR  
    reverse current  
    VR = VRRMmax  
    see Fig. 9  
    ;
    µA  
    µA  
    ns  
    VR = VRRMmax; Tj = 165 °C;  
    see Fig. 9  
    −
    −
    −
    −
    150  
    250  
    trr  
    reverse recovery time  
    diode capacitance  
    when switched from IF = 0.5 A  
    to IR = 1 A; measured at  
    IR = 0.25 A; see Fig. 12  
    Cd  
    f = 1 MHz; VR = 0 V; see Fig. 10  
    −
    −
    45  
    −
    pF  
    when switched from IF = 1 A to  
    VR ≥ 30 V and dIF/dt = −1 A/µs;  
    see Fig.13  
    −
    7
    A/µs  
    maximum slope of  
    reverse recovery current  
    dIR  
    --------  
    dt  
    THERMAL CHARACTERISTICS  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    VALUE  
    UNIT  
    Rth j-tp  
    Rth j-a  
    thermal resistance from junction to tie-point  
    thermal resistance from junction to ambient  
    lead length = 10 mm  
    note 1  
    46  
    K/W  
    K/W  
    100  
    Note  
    1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.  
    For more information please refer to the ‘General Part of Handbook SC01’.  
    1996 Jun 07  
    3
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    GRAPHICAL DATA  
    MGC581  
    MGC580  
    2.0  
    1.2  
    handbook, halfpage  
    handbook, halfpage  
    I
    F(AV)  
    I
    F(AV)  
    lead length 10 mm  
    (A)  
    1.6  
    (A)  
    0.8  
    1.2  
    0.8  
    0.4  
    0.4  
    0
    0
    0
    0
    100  
    o
    200  
    100  
    200  
    o
    T
    ( C)  
    tp  
    T
    ( C)  
    amb  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Device mounted as shown in Fig.11.  
    Switched mode application.  
    Switched mode application.  
    Fig.2 Maximum permissible average forward  
    current as a function of tie-point temperature  
    (including losses due to reverse leakage).  
    Fig.3 Maximum permissible average forward  
    current as a function of ambient temperature  
    (including losses due to reverse leakage).  
    MGC578  
    20  
    I
    FRM  
    (A)  
    δ =  
    0.05  
    16  
    12  
    8
    0.1  
    0.2  
    4
    0.5  
    1
    0
    10  
    2
    1
    2
    3
    4
    10  
    1
    10  
    10  
    10  
    10  
    t
    (ms)  
    p
    Ttp = 65 °C; Rth j-tp = 46 K/W.  
    VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.  
    Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    1996 Jun 07  
    4
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    MGC579  
    10  
    δ =  
    0.05  
    I
    FRM  
    (A)  
    8
    6
    4
    2
    0
    0.1  
    0.2  
    0.5  
    1
    2
    1
    2
    3
    4
    10  
    10  
    1
    10  
    10  
    10  
    10  
    t
    (ms)  
    p
    Tamb = 65 °C; Rth j-a = 100 K/W.  
    RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.  
    V
    Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    MGC576  
    MGC575  
    3
    200  
    handbook, halfpage  
    handbook, halfpage  
    P
    (W)  
    2
    a = 3 2.5  
    1.57  
    1.42  
    T
    j
    o
    ( C)  
    2
    1
    100  
    A
    B
    C
    0
    0
    0
    0
    1
    2
    200  
    400  
    600  
    800  
    I
    (A)  
    V
    (V)  
    R
    F(AV)  
    a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
    Solid line = VR.  
    Fig.6 Maximum steady state power dissipation  
    (forward plus leakage current losses,  
    excluding switching losses) as a function  
    of average forward current.  
    Dotted line = VRRM; δ = 0.5.  
    Fig.7 Maximum permissible junction temperature  
    as a function of reverse voltage.  
    1996 Jun 07  
    5
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    MGC577  
    MGC574  
    3
    8
    10  
    handbook, halfpage  
    handbook, halfpage  
    I
    I
    F
    R
    (A)  
    (µA)  
    2
    6
    10  
    4
    2
    10  
    1
    1
    10  
    0
    0
    1
    2
    3
    0
    100  
    200  
    o
    V
    (V)  
    T ( C)  
    j
    F
    Dotted line: Tj = 175 °C.  
    Solid line: Tj = 25 °C.  
    VR = VRRMmax  
    .
    Fig.8 Forward current as a function of forward  
    voltage; maximum values.  
    Fig.9 Reverse current as a function of junction  
    temperature; maximum values.  
    MGC582  
    2
    10  
    50  
    handbook, halfpage  
    handbook, halfpage  
    25  
    C
    d
    (pF)  
    7
    50  
    10  
    2
    3
    1
    3
    2
    MGA200  
    1
    10  
    10  
    10  
    V
    (V)  
    R
    f = 1 MHz; Tj = 25 °C.  
    Dimensions in mm.  
    Fig.10 Diode capacitance as a function of reverse  
    voltage; typical values.  
    Fig.11 Device mounted on a printed-circuit board.  
    1996 Jun 07  
    6
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    DUT  
    I
    F
    (A)  
    +
    0.5  
    t
    rr  
    25 V  
    10 Ω  
    1 Ω  
    50 Ω  
    0
    0.25  
    0.5  
    t
    I
    R
    (A)  
    MAM057  
    1
    Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.  
    Source impedance: 50 Ω; tr ≤ 15 ns.  
    Fig.12 Test circuit and reverse recovery time waveform and definition.  
    I
    andbook, halfpage  
    F
    dI  
    F
    dt  
    t
    rr  
    t
    10%  
    dI  
    R
    dt  
    100%  
    I
    R
    MGC499  
    Fig.13 Reverse recovery definitions.  
    1996 Jun 07  
    7
    Philips Semiconductors  
    Product specification  
    Fast soft-recovery  
    controlled avalanche rectifiers  
    BYV95 series  
    PACKAGE OUTLINE  
    k
    a
    0.81  
    max  
    3.81  
    max  
    4.57  
    max  
    MBC880  
    28 min  
    28 min  
    Dimensions in mm.  
    The marking band indicates the cathode.  
    Fig.14 SOD57.  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    1996 Jun 07  
    8
    配单直通车
    BYV95AAMO产品参数
    型号:BYV95AAMO
    生命周期：Obsolete
    IHS 制造商：NXP SEMICONDUCTORS
    包装说明：E-LALF-W2
    针数：2
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    风险等级：5.63
    外壳连接：ISOLATED
    配置：SINGLE
    二极管元件材料：SILICON
    二极管类型：RECTIFIER DIODE
    JESD-30 代码：E-LALF-W2
    元件数量：1
    端子数量：2
    最高工作温度：175 °C
    最低工作温度：-65 °C
    封装主体材料：GLASS
    封装形状：ELLIPTICAL
    封装形式：LONG FORM
    认证状态：Not Qualified
    参考标准：IEC-134
    最大重复峰值反向电压：200 V
    最大反向恢复时间：0.25 µs
    表面贴装：NO
    技术：AVALANCHE
    端子形式：WIRE
    端子位置：AXIAL
    Base Number Matches：1
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