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  • BYW33-TAP图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BYW33-TAP 现货库存
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  • 厂家Vishay General Semiconductor - Diodes Di 
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产品型号BYW33-TAP的Datasheet PDF文件预览

BYW32...BYW36  
Vishay Telefunken  
Fast Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Low reverse current  
Soft recovery characteristics  
Applications  
94 9539  
Fast rectifier and switch for example for TV–line output  
circuits and switch mode power supply  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
300  
400  
500  
600  
50  
Unit  
V
V
V
V
BYW32  
BYW33  
BYW34  
BYW35  
BYW36  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
V =V  
R
V
A
Peak forward surge current  
t =10ms,  
p
I
FSM  
half sinewave  
Repetitive peak forward current  
Average forward current  
Junction and storage temperature range  
I
12  
2
A
A
C
FRM  
ϕ=180  
I
FAV  
T =T  
j
–55...+175  
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=10mm, T =constant  
on PC board with spacing 25mm  
Symbol  
Value  
45  
100  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Reverse current  
Test Conditions  
Type Symbol Min  
Typ Max Unit  
0.95 1.1  
I =1A  
V
F
V
F
V =V  
I
I
1
5
A
R
RRM  
R
V =V  
R
, T =150 C  
60  
150  
200  
A
ns  
RRM  
j
R
Reverse recovery time  
I =0.5A, I =1A, i =0.25A  
t
rr  
F
R
R
Document Number 86048  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  
BYW32...BYW36  
Vishay Telefunken  
Characteristics (Tj = 25 C unless otherwise specified)  
120  
100  
80  
60  
40  
20  
0
1000  
100  
10  
Scattering Limit  
l
l
V =V  
R
R RM  
1
T =constant  
L
0.1  
30  
200  
0
5
10  
15  
20  
25  
0
40  
80  
120  
160  
94 9552  
l – Lead Length ( mm )  
94 9560  
T – Junction Temperature ( °C )  
j
Figure 1. Max. Thermal Resistance vs. Lead Length  
Figure 4. Reverse Current vs. Junction Temperature  
1.2  
100  
R
=100K/W  
20kHz  
PC Board  
thJA  
f
1.0  
0.8  
0.6  
0.4  
0.2  
0
T =175°C  
j
10  
1
T =25°C  
j
0.1  
0.01  
200  
3.0  
0
40  
80  
120  
160  
0
0.6  
1.2  
1.8  
2.4  
94 9558  
T
amb  
– Ambient Temperature ( °C )  
94 9555  
V – Forward Voltage ( V )  
F
Figure 2. Max. Average Forward Current vs.  
Ambient Temperature  
Figure 5. Max. Forward Current vs. Forward Voltage  
20  
16  
12  
8
2.0  
1.6  
1.2  
0.8  
f
20kHz  
R
=45K/W  
l=10mm  
thJA  
4
0.4  
0
0
200  
100  
0
40  
80  
120  
160  
0.1  
1
10  
V – Reverse Voltage ( V )  
R
94 9559  
T
amb  
– Ambient Temperature ( °C )  
94 9557  
Figure 3. Max. Average Forward Current vs.  
Ambient Temperature  
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86048  
Rev. 2, 24-Jun-98  
2 (4)  
BYW32...BYW36  
Vishay Telefunken  
1000  
100  
10  
V
R
=600V  
=100K/W  
R RM  
thJA  
t /T=0.5  
p
t /T=0.2  
p
T
=25°C  
amb  
70°C  
t /T=0.1  
p
45°C  
t /T=0.02  
p
Single pulse  
50°C  
t /T=0.01  
p
100°C  
1
–5  
–4  
–3  
–2  
–1  
0
1
0
1
10  
10  
10  
10  
10  
10  
10  
10  
10  
– Repetitive Peak  
I
FRM  
94 9561  
t – Pulse Length ( s )  
p
Forward Current ( A )  
Figure 7. Thermal Response  
Dimensions in mm  
3.6 max.  
94 9538  
Sintered Glass Case  
SOD 57  
Weight max. 0.5g  
Cathode Identification  
technical drawings  
according to DIN  
specifications  
0.82 max.  
26 min.  
26 min.  
4.2 max.  
Document Number 86048  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
3 (4)  
BYW32...BYW36  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86048  
Rev. 2, 24-Jun-98  
4 (4)  
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