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    • BYD71A图

    • 深圳市芯福林电子有限公司

       该会员已使用本站15年以上
    • BYD71A
    • 数量65000 
    • 厂家TOSHIBA 
    • 封装DO-15 
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    • BYD71A图

    • 北京首天国际有限公司

       该会员已使用本站16年以上
    • BYD71A
    • 数量3000 
    • 厂家PHILIPS 
    • 封装 
    • 批号2024+ 
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    产品型号BYD71A的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    book, halfpage  
    BYD71 series  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    1996 Sep 19  
    Product specification  
    Supersedes data of 1996 May 24  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    hermetically sealed and fatigue free  
    as coefficients of expansion of all  
    used parts are matched.  
    FEATURES  
    DESCRIPTION  
    • Glass passivated  
    Cavity free cylindrical SOD91 glass  
    package through Implotec  
    technology. This package is  
    (1)  
    • High maximum operating  
    temperature  
    (1) Implotec is a trademark of Philips.  
    • Low leakage current  
    • Excellent stability  
    • Guaranteed avalanche energy  
    absorption capability  
    a
    k
    • Available in ammo-pack.  
    MAM196  
    Fig.1 Simplified outline (SOD91) and symbol.  
    LIMITING VALUES  
    In accordance with the Absolute Maximum Rating System (IEC 134).  
    SYMBOL  
    PARAMETER  
    repetitive peak reverse voltage  
    BYD71A  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    VRRM  
    −
    −
    −
    −
    −
    −
    −
    50  
    100  
    150  
    200  
    250  
    300  
    400  
    V
    V
    V
    V
    V
    V
    V
    BYD71B  
    BYD71C  
    BYD71D  
    BYD71E  
    BYD71F  
    BYD71G  
    VR  
    continuous reverse voltage  
    BYD71A  
    −
    −
    −
    −
    −
    −
    −
    50  
    100  
    150  
    200  
    250  
    300  
    400  
    V
    V
    V
    V
    V
    V
    V
    BYD71B  
    BYD71C  
    BYD71D  
    BYD71E  
    BYD71F  
    BYD71G  
    IF(AV)  
    average forward current  
    BYD71A to D  
    BYD71E to G  
    Ttp = 55 °C; lead length = 10 mm;  
    see Figs 2 and 3;  
    averaged over any 20 ms period;  
    see also Figs 10 and 11  
    −
    −
    0.56  
    0.54  
    A
    A
    IF(AV)  
    average forward current  
    BYD71A to D  
    Tamb = 60 °C; PCB mounting (see  
    Fig.16); see Figs 4 and 5;  
    averaged over any 20 ms period;  
    see also Figs 10 and 11  
    −
    −
    0.43  
    0.41  
    A
    A
    BYD71E to G  
    1996 Sep 19  
    2
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    IFRM  
    repetitive peak forward current  
    BYD71A to D  
    Ttp = 55 °C; see Figs 6 and 7  
    −
    −
    4.7  
    5.0  
    A
    A
    BYD71E to G  
    IFRM  
    repetitive peak forward current  
    BYD71A to D  
    Tamb = 60 °C; see Figs 8 and 9  
    −
    −
    −
    3.7  
    3.9  
    7
    A
    A
    A
    BYD71E to G  
    IFSM  
    non-repetitive peak forward current  
    t = 10 ms half sine wave;  
    Tj = Tj max prior to surge;  
    VR = VRRMmax  
    PRSM  
    non-repetitive peak reverse power  
    dissipation  
    t = 20 µs half sine wave; Tj = Tj max  
    prior to surge  
    BYD71A to D  
    −
    250  
    150  
    W
    W
    BYD71E to G  
    −
    Tstg  
    Tj  
    storage temperature  
    junction temperature  
    −65  
    −65  
    +175 °C  
    +175 °C  
    ELECTRICAL CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    forward voltage  
    CONDITIONS  
    MIN.  
    TYP.  
    MAX.  
    UNIT  
    VF  
    IF = 0.5 A; Tj = Tj max  
    see Figs 12 and 13  
    ;
    BYD71A to D  
    BYD71E to G  
    forward voltage  
    BYD71A to D  
    BYD71E to G  
    −
    −
    −
    −
    0.84  
    0.90  
    V
    V
    VF  
    IF = 0.5 A;  
    see Figs 12 and 13  
    −
    −
    −
    −
    1.05  
    1.11  
    V
    V
    V(BR)R  
    reverse avalanche breakdown  
    voltage  
    IR = 0.1 mA  
    BYD71A  
    BYD71B  
    55  
    110  
    165  
    220  
    275  
    330  
    440  
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    1
    V
    V
    BYD71C  
    V
    BYD71D  
    V
    BYD71E  
    V
    BYD71F  
    V
    BYD71G  
    V
    IR  
    reverse current  
    VR = VRRMmax  
    see Fig 14  
    ;
    ;
    µA  
    VR = VRRMmax  
    −
    −
    75  
    µA  
    Tj = 165 °C; see Fig 14  
    trr  
    reverse recovery time  
    BYD71A to D  
    when switched from  
    IF = 0.5 A to IR = 1 A;  
    measured at IR = 0.25 A  
    see Fig 18  
    −
    −
    −
    −
    25  
    50  
    ns  
    ns  
    BYD71E to G  
    1996 Sep 19  
    3
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    SYMBOL  
    PARAMETER  
    diode capacitance  
    CONDITIONS  
    MIN.  
    TYP.  
    MAX.  
    UNIT  
    Cd  
    f = 1 MHz; VR = 0 V;  
    see Fig.15  
    BYD71A to D  
    BYD71E to G  
    −
    −
    25  
    20  
    −
    −
    pF  
    pF  
    when switched from  
    IF = 1 A to VR ≥ 30 V  
    and dIF/dt = −1 A/µs;  
    see Fig.17  
    maximum slope of reverse recovery  
    current  
    dIR  
    --------  
    dt  
    BYD71A to D  
    BYD71E to G  
    −
    −
    −
    −
    4
    5
    A/µs  
    A/µs  
    THERMAL CHARACTERISTICS  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    VALUE  
    UNIT  
    Rth j-tp  
    Rth j-a  
    thermal resistance from junction to tie-point  
    thermal resistance from junction to ambient  
    lead length = 10 mm  
    note 1  
    180  
    250  
    K/W  
    K/W  
    Note  
    1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.  
    For more information please refer to the “General Part of associated Handbook”.  
    1996 Sep 19  
    4
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    GRAPHICAL DATA  
    MCD564  
    MCD565  
    0.8  
    0.8  
    handbook, halfpage  
    handbook, halfpage  
    I
    I
    F(AV)  
    F(AV)  
    (A)  
    (A)  
    0.6  
    0.6  
    lead length 10 mm  
    lead length 10 mm  
    0.4  
    0.2  
    0.4  
    0.2  
    0
    0
    0
    100  
    200  
    0
    100  
    200  
    o
    o
    T
    ( C)  
    T
    ( C)  
    tp  
    tp  
    BYD71A to D  
    BYD71E to G  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Switched mode application.  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Switched mode application.  
    Fig.2 Maximum permissible average forward  
    current as a function of tie-point temperature  
    (including losses due to reverse leakage).  
    Fig.3 Maximum permissible average forward  
    current as a function of tie-point temperature  
    (including losses due to reverse leakage).  
    MGC526  
    MGC527  
    0.6  
    0.6  
    handbook, halfpage  
    handbook, halfpage  
    I
    I
    F(AV)  
    F(AV)  
    (A)  
    (A)  
    0.4  
    0.4  
    0.2  
    0.2  
    0
    0
    0
    100  
    200  
    0
    100  
    200  
    o
    o
    T
    ( C)  
    T
    ( C)  
    amb  
    amb  
    BYD71A to D  
    BYD71E to G  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Device mounted as shown in Fig.16.  
    Switched mode application.  
    Device mounted as shown in Fig.16.  
    Switched mode application.  
    Fig.4 Maximum permissible average forward  
    current as a function of ambient temperature  
    (including losses due to reverse leakage).  
    Fig.5 Maximum permissible average forward  
    current as a function of ambient temperature  
    (including losses due to reverse leakage).  
    1996 Sep 19  
    5
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    MCD563  
    5.0  
    I
    FRM  
    δ =  
    0.05  
    (
    )
    A
    0.1  
    0.2  
    2.5  
    0.5  
    1
    0
    10  
    0
    1
    -2  
    -1  
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    t
    ms  
    p
    BYD71A to D  
    Ttp = 55 °C; Rth j-tp = 180 K/W.  
    VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
    Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    MCD562  
    5.0  
    δ =  
    0.05  
    I
    FRM  
    (
    )
    A
    0.1  
    0.2  
    2.5  
    0.5  
    1
    0
    10  
    -2  
    -1  
    0
    1
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    ms  
    t
    p
    BYD71E to G  
    Ttp = 55 °C; Rth j-tp = 180 K/W.  
    VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.  
    Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    1996 Sep 19  
    6
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    MCD561  
    4
    I
    FRM  
    δ =  
    0.05  
    (
    )
    A
    3
    2
    1
    0.1  
    0.2  
    0.5  
    1
    0
    10  
    -2  
    -1  
    0
    1
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    ms  
    t
    p
    BYD71A to D  
    Tamb = 60 °C; Rth j-a = 250 K/W.  
    RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
    V
    Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    MCD560  
    4
    I
    δ =  
    0.05  
    FRM  
    (
    )
    A
    3
    2
    1
    0.1  
    0.2  
    0.5  
    1
    0
    10  
    -2  
    -1  
    0
    1
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    t
    ms  
    p
    BYD71E to G  
    Tamb = 60 °C; Rth j-a = 250 K/W.  
    VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.  
    Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    1996 Sep 19  
    7
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    MCD567  
    MCD566  
    0.50  
    0.50  
    handbook, halfpage  
    a = 3  
    handbook, halfpage  
    a = 3  
    2.5  
    2.5  
    2
    a = 1.57  
    1.42  
    P
    (W)  
    P
    2
    a = 1.57  
    1.42  
    (W)  
    0.25  
    0.25  
    0
    0
    0
    0
    0.25  
    0.50  
    0.25  
    0.50  
    I
    (A)  
    I
    (A)  
    F(AV)  
    F(AV)  
    BYD71A to D  
    a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
    BYD71E to G  
    a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
    Fig.10 Maximum steady state power dissipation  
    (forward plus leakage current losses,  
    excluding switching losses) as a function  
    of average forward current.  
    Fig.11 Maximum steady state power dissipation  
    (forward plus leakage current losses,  
    excluding switching losses) as a function  
    of average forward current.  
    MCD568  
    MCD569  
    5
    5
    handbook, halfpage  
    handbook, halfpage  
    I
    I
    F
    F
    (A)  
    (A)  
    4
    4
    3
    2
    1
    0
    3
    2
    1
    0
    0
    1
    2
    3
    4
    0
    1
    2
    3
    V
    (V)  
    V
    (V)  
    F
    F
    BYD71A to D  
    BYD71E to G  
    Dotted line: Tj = 175 °C.  
    Solid line: Tj = 25 °C.  
    Dotted line: Tj = 175 °C.  
    Solid line: Tj = 25 °C.  
    Fig.12 Forward current as a function of forward  
    voltage; maximum values.  
    Fig.13 Forward current as a function of forward  
    voltage; maximum values.  
    1996 Sep 19  
    8
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    MCD582  
    MCD559  
    3
    2
    10  
    10  
    handbook, halfpage  
    handbook, halfpage  
    I
    R
    C
    d
    (µA)  
    (pF)  
    2
    10  
    10  
    10  
    A, B, C, D  
    E, F, G  
    1
    1
    1
    2
    3
    10  
    10  
    10  
    0
    100  
    200  
    V (V)  
    R
    o
    (
    )
    C
    T
    j
    VR = VRRMmax  
    .
    f = 1 MHz; Tj = 25 °C.  
    Fig.14 Reverse current as a function of junction  
    temperature; maximum values.  
    Fig.15 Diode capacitance as a function of reverse  
    voltage; typical values.  
    50  
    handbook, halfpage  
    I
    dbook, halfpage  
    25  
    F
    dI  
    F
    dt  
    7
    t
    rr  
    50  
    t
    10%  
    dI  
    R
    dt  
    100%  
    2
    I
    R
    MGC499  
    3
    MGA200  
    Dimensions in mm.  
    Fig.16 Device mounted on a printed-circuit board.  
    Fig.17 Reverse recovery definitions.  
    1996 Sep 19  
    9
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    DUT  
    I
    F
    (A)  
    +
    0.5  
    t
    rr  
    25 V  
    10 Ω  
    1 Ω  
    50 Ω  
    0
    0.25  
    0.5  
    t
    I
    R
    (A)  
    MAM057  
    1
    Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.  
    Source impedance: 50 Ω; tr ≤ 15 ns.  
    Fig.18 Test circuit and reverse recovery time waveform and definition.  
    1996 Sep 19  
    10  
    Not recommended for new designs  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD71 series  
    PACKAGE OUTLINE  
    3.5 max  
    3.0 max  
    0.55  
    max  
    1.7  
    max  
    MBC053  
    29 min  
    29 min  
    Dimensions in mm.  
    The marking band indicates the cathode.  
    Fig.19 SOD91.  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    1996 Sep 19  
    11  
    Not recommended for new designs  
    配单直通车
    BYD71A产品参数
    型号:BYD71A
    是否Rohs认证： 不符合
    生命周期：Transferred
    IHS 制造商：PHILIPS SEMICONDUCTORS
    Reach Compliance Code：unknown
    风险等级：5.84
    配置：SINGLE
    二极管类型：RECTIFIER DIODE
    最大正向电压 (VF)：0.84 V
    JESD-609代码：e0
    最大非重复峰值正向电流：7 A
    元件数量：1
    最高工作温度：175 °C
    最大输出电流：0.56 A
    最大重复峰值反向电压：50 V
    最大反向恢复时间：0.025 µs
    子类别：Rectifier Diodes
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    Base Number Matches：1
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