欢迎访问ic37.com |
会员登录 免费注册
会员中心
企业资讯   人才招聘  
电子百科

电子百科

Datasheet下载 IC品牌 缩略语 技术文章 IC型号

产品导航

ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789
产品
  • 产品
  • PDF

    • 最近搜索

    热门搜索

    搜索
    发布采购
    所在地： 型号： 精确
    • 批量询价
    •  
    • 供应商
    • 型号
    • 数量
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
    更多
    • BYD77B,115图

    • 深圳市华芯盛世科技有限公司

       该会员已使用本站13年以上
    • BYD77B,115
    • 数量876500 
    • 厂家Philips 
    • 封装原厂封装 
    • 批号最新批号 
    • 一级代理,原装特价现货！
    • QQ:2881475757QQ：2881475757 复制
    • 0755-83225692 QQ:2881475757

    产品型号BYD77B,115的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    book, halfpage  
    BYD77 series  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    Product specification  
    1999 Nov 15  
    Supersedes data of 1996 May 24  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    FEATURES  
    DESCRIPTION  
    hermetically sealed and fatigue free  
    as coefficients of expansion of all  
    used parts are matched.  
    • Glass passivated  
    Cavity free cylindrical glass SOD87  
    package through Implotec  
    technology. This package is  
    (1)  
    • High maximum operating  
    temperature  
    (1) Implotec is a trademark of Philips.  
    • Low leakage current  
    • Excellent stability  
    • Guaranteed avalanche energy  
    absorption capability  
    k
    a
    handbook, 4 columns  
    • Shipped in 8 mm embossed tape  
    MAM061  
    • Smallest surface mount  
    rectifier outline.  
    Fig.1 Simplified outline (SOD87) and symbol.  
    LIMITING VALUES  
    In accordance with the Absolute Maximum Rating System (IEC 134).  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    VRRM  
    repetitive peak reverse voltage  
    BYD77A  
    −
    −
    −
    −
    −
    −
    −
    50  
    100  
    150  
    200  
    250  
    300  
    400  
    V
    V
    V
    V
    V
    V
    V
    BYD77B  
    BYD77C  
    BYD77D  
    BYD77E  
    BYD77F  
    BYD77G  
    VR  
    continuous reverse voltage  
    BYD77A  
    −
    −
    −
    −
    −
    −
    −
    50  
    100  
    150  
    200  
    250  
    300  
    400  
    V
    V
    V
    V
    V
    V
    V
    BYD77B  
    BYD77C  
    BYD77D  
    BYD77E  
    BYD77F  
    BYD77G  
    IF(AV)  
    average forward current  
    BYD77A to D  
    BYD77E to G  
    average forward current  
    BYD77A to D  
    BYD77E to G  
    Ttp = 105 °C; see Figs 2 and 3;  
    averaged over any 20 ms period;  
    see also Figs 10 and 11  
    −
    −
    2.00  
    1.85  
    A
    A
    IF(AV)  
    Tamb = 60 °C; PCB mounting (see  
    Fig.16); see Figs 4 and 5;  
    averaged over any 20 ms period;  
    see also Figs 10 and 11  
    −
    −
    0.85  
    0.80  
    A
    A
    1999 Nov 15  
    2
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    UNIT  
    IFRM  
    repetitive peak forward current  
    BYD77A to D  
    Ttp = 105 °C; see Figs 6 and 7  
    −
    −
    15  
    13  
    A
    A
    BYD77E to G  
    IFRM  
    repetitive peak forward current  
    BYD77A to D  
    Tamb = 60 °C; see Figs 8 and 9  
    −
    −
    −
    8.5  
    8.0  
    25  
    A
    A
    A
    BYD77E to G  
    IFSM  
    non-repetitive peak forward current  
    t = 10 ms half sine wave; Tj = Tj max  
    prior to surge; VR = VRRMmax  
    ERSM  
    non-repetitive peak reverse  
    avalanche energy  
    L = 120 mH; Tj = 25 °C prior to  
    surge; inductive load switched off  
    −
    10 mJ  
    Tstg  
    Tj  
    storage temperature  
    junction temperature  
    −65  
    −65  
    +175 °C  
    +175 °C  
    ELECTRICAL CHARACTERISTICS  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    forward voltage  
    CONDITIONS  
    IF = 1 A; Tj = Tj max  
    MIN.  
    TYP.  
    MAX.  
    UNIT  
    VF  
    ;
    see Figs 12 and 13  
    BYD77A to D  
    BYD77E to G  
    forward voltage  
    BYD77A to D  
    BYD77E to G  
    −
    −
    −
    −
    0.75  
    0.83  
    V
    V
    VF  
    IF = 1 A;  
    see Figs 12 and 13  
    −
    −
    −
    −
    0.98  
    1.05  
    V
    V
    V(BR)R  
    reverse avalanche breakdown  
    voltage  
    IR = 0.1 mA  
    BYD77A  
    BYD77B  
    55  
    110  
    165  
    220  
    275  
    330  
    440  
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    −
    1
    V
    V
    BYD77C  
    V
    BYD77D  
    V
    BYD77E  
    V
    BYD77F  
    V
    BYD77G  
    reverse current  
    V
    IR  
    VR = VRRMmax  
    see Fig.14  
    ;
    ;
    µA  
    VR = VRRMmax  
    −
    −
    100  
    µA  
    Tj = 165 °C; see Fig.14  
    trr  
    reverse recovery time  
    BYD77A to D  
    when switched from  
    IF = 0.5 A to IR = 1 A;  
    measured at IR = 0.25 A;  
    see Fig.18  
    −
    −
    −
    −
    25  
    50  
    ns  
    ns  
    BYD77E to G  
    1999 Nov 15  
    3
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    SYMBOL  
    PARAMETER  
    diode capacitance  
    CONDITIONS  
    MIN.  
    TYP.  
    MAX.  
    UNIT  
    Cd  
    f = 1 MHz; VR = 0 V;  
    see Fig.15  
    BYD77A to D  
    BYD77E to G  
    −
    −
    50  
    40  
    −
    −
    pF  
    pF  
    maximum slope of reverse recovery when switched from  
    dIR  
    --------  
    dt  
    current  
    BYD77A to D  
    BYD77E to G  
    IF = 1 A to VR ≥ 30 V and  
    dIF/dt = −1 A/µs;  
    see Fig.17  
    −
    −
    −
    −
    4
    5
    A/µs  
    A/µs  
    THERMAL CHARACTERISTICS  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    VALUE  
    UNIT  
    Rth j-tp  
    Rth j-a  
    thermal resistance from junction to tie-point  
    thermal resistance from junction to ambient  
    30  
    K/W  
    K/W  
    note 1  
    150  
    Note  
    1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.  
    For more information please refer to the “General Part of associated Handbook”.  
    1999 Nov 15  
    4
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    GRAPHICAL DATA  
    MCD598  
    MCD596  
    3
    4
    handbook, halfpage  
    handbook, halfpage  
    I
    F(AV)  
    I
    F(AV)  
    (A)  
    (A)  
    3
    2
    2
    1
    1
    0
    0
    0
    0
    100  
    200  
    o
    100  
    200  
    o
    T
    ( C)  
    T
    ( C)  
    tp  
    tp  
    BYD77A to D  
    BYD77E to G  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Switched mode application.  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Switched mode application.  
    Fig.2 Maximum permissible average forward  
    current as a function of tie-point temperature  
    (including losses due to reverse leakage).  
    Fig.3 Maximum permissible average forward  
    current as a function of tie-point temperature  
    (including losses due to reverse leakage).  
    MCD595  
    MCD597  
    1.0  
    1.2  
    handbook, halfpage  
    handbook, halfpage  
    I
    F(AV)  
    (A)  
    I
    F(AV)  
    (A)  
    0.8  
    0.5  
    0.4  
    0
    0
    0
    100  
    200  
    0
    100  
    200  
    o
    ( C)  
    o
    ( C)  
    T
    T
    amb  
    amb  
    BYD77A to D  
    BYD77E to G  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    a = 1.42; VR = VRRMmax; δ = 0.5.  
    Device mounted as shown in Fig.16.  
    Switched mode application.  
    Device mounted as shown in Fig.16.  
    Switched mode application.  
    Fig.4 Maximum permissible average forward  
    current as a function of ambient temperature  
    (including losses due to reverse leakage).  
    Fig.5 Maximum permissible average forward  
    current as a function of ambient temperature  
    (including losses due to reverse leakage).  
    1999 Nov 15  
    5
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    MCD593  
    20  
    δ =  
    0.05  
    I
    FRM  
    (
    )
    A
    0.1  
    0.2  
    10  
    0.5  
    1
    0
    10  
    0
    1
    -2  
    -1  
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    t
    ms  
    p
    BYD77A to D  
    Ttp = 105 °C; Rth j-tp = 30 K/W.  
    RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
    V
    Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    MCD591  
    20  
    I
    δ =  
    0.05  
    FRM  
    (
    )
    A
    0.1  
    0.2  
    10  
    0.5  
    1
    0
    10  
    0
    1
    -2  
    -1  
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    t
    ms  
    p
    BYD77E to G  
    Ttp = 105°C; Rth j-tp = 30 K/W.  
    VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.  
    Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    1999 Nov 15  
    6
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    MCD592  
    10  
    I
    FRM  
    δ =  
    0.05  
    (
    )
    A
    0.1  
    0.2  
    5
    0.5  
    1
    0
    10  
    0
    1
    -2  
    -1  
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    t
    ms  
    p
    BYD77A to D  
    Tamb = 60 °C; Rth j-a = 150 K/W.  
    RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
    V
    Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    MCD590  
    10  
    I
    FRM  
    (
    )
    A
    δ =  
    0.05  
    0.1  
    0.2  
    5
    0.5  
    1
    0
    10  
    0
    1
    -2  
    -1  
    2
    3
    4
    10  
    10  
    10  
    10  
    10  
    10  
    (
    )
    t
    ms  
    p
    BYD77E to G  
    Tamb = 60 °C; Rth j-a = 150 K/W.  
    VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.  
    Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
    1999 Nov 15  
    7
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    MGC530  
    MGC529  
    2
    2
    handbook, halfpage  
    handbook, halfpage  
    a=3 2.5  
    2
    1.57 1.42  
    a=3 2.5 2 1.57 1.42  
    P
    (W)  
    P
    (W)  
    1
    1
    0
    0
    0
    0
    1
    2
    1
    2
    I
    (A)  
    I
    (A)  
    F(AV)  
    F(AV)  
    BYD77A to D  
    BYD77E to G  
    a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
    a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
    Fig.10 Maximum steady state power dissipation  
    (forward plus leakage current losses,  
    excluding switching losses) as a function  
    of average forward current.  
    Fig.11 Maximum steady state power dissipation  
    (forward plus leakage current losses,  
    excluding switching losses) as a function  
    of average forward current.  
    MCD594  
    MGC531  
    10  
    10  
    handbook, halfpage  
    handbook, halfpage  
    I
    I
    F
    F
    (A)  
    (A)  
    8
    6
    4
    2
    0
    8
    6
    4
    2
    0
    0
    1
    2
    0
    1
    2
    3
    V
    (V)  
    V
    (V)  
    F
    F
    BYD77A to D  
    BYD77E to G  
    Dotted line: Tj = 175 °C.  
    Solid line: Tj = 25 °C.  
    Dotted line: Tj = 175 °C.  
    Solid line: Tj = 25 °C.  
    Fig.12 Forward current as a function of forward  
    voltage; maximum values.  
    Fig.13 Forward current as a function of forward  
    voltage; maximum values.  
    1999 Nov 15  
    8
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    MGA853  
    MCD608  
    2
    3
    10  
    10  
    handbook, halfpage  
    handbook, halfpage  
    I
    R
    (µA)  
    C
    d
    (pF)  
    2
    10  
    10  
    A, B, C, D  
    E, F, G  
    10  
    1
    1
    2
    3
    0
    100  
    200  
    o
    ( C)  
    1
    10  
    10  
    10  
    T
    j
    V
    (V)  
    R
    VR = VRRMmax  
    .
    f = 1 MHz; Tj = 25 °C.  
    Fig.14 Reverse current as a function of junction  
    temperature; maximum values.  
    Fig.15 Diode capacitance as a function of reverse  
    voltage; typical values.  
    50  
    I
    ndbook, halfpage  
    F
    dI  
    F
    dt  
    t
    rr  
    4.5  
    t
    10%  
    50  
    dI  
    R
    dt  
    2.5  
    100%  
    I
    R
    MGC499  
    1.25  
    MSB213  
    Dimensions in mm.  
    Fig.16 Printed-circuit board for surface mounting.  
    Fig.17 Reverse recovery definitions.  
    1999 Nov 15  
    9
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    I
    F
    DUT  
    (A)  
    +
    0.5  
    t
    rr  
    25 V  
    10 Ω  
    1 Ω  
    50 Ω  
    0
    0.25  
    0.5  
    t
    I
    R
    (A)  
    MAM057  
    1.0  
    Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.  
    Source impedance: 50 Ω; tr ≤ 15 ns.  
    Fig.18 Test circuit and reverse recovery time waveform and definition.  
    1999 Nov 15  
    10  
    Philips Semiconductors  
    Product specification  
    Ultra fast low-loss  
    controlled avalanche rectifiers  
    BYD77 series  
    PACKAGE OUTLINE  
    Hermetically sealed glass surface mounted package;  
    ImplotecTM(1) technology; 2 connectors  
    SOD87  
    k
    a
    (2)  
    D
    D
    1
    L
    L
    H
    DIMENSIONS (mm are the original dimensions)  
    D1  
    L
    D
    H
    UNIT  
    0
    1
    2 mm  
    scale  
    2.1  
    2.0  
    2.0  
    1.8  
    3.7  
    3.3  
    mm  
    0.3  
    Notes  
    1. Implotec is a trademark of Philips.  
    2. The marking indicates the cathode.  
    REFERENCES  
    JEDEC  
    EUROPEAN  
    PROJECTION  
    OUTLINE  
    VERSION  
    ISSUE DATE  
    IEC  
    EIAJ  
    99-03-31  
    99-06-04  
    SOD87  
    100H03  
    DEFINITIONS  
    Data Sheet Status  
    Objective specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Preliminary specification  
    Product specification  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    1999 Nov 15  
    11  
    Philips Semiconductors – a worldwide company  
    Argentina: see South America  
    Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
    Tel. +31 40 27 82785, Fax. +31 40 27 88399  
    Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,  
    Tel. +61 2 9704 8141, Fax. +61 2 9704 8139  
    New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
    Tel. +64 9 849 4160, Fax. +64 9 849 7811  
    Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
    Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
    Norway: Box 1, Manglerud 0612, OSLO,  
    Tel. +47 22 74 8000, Fax. +47 22 74 8341  
    Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
    220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
    Pakistan: see Singapore  
    Belgium: see The Netherlands  
    Brazil: see South America  
    Philippines: Philips Semiconductors Philippines Inc.,  
    106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
    Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
    Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
    51 James Bourchier Blvd., 1407 SOFIA,  
    Tel. +359 2 68 9211, Fax. +359 2 68 9102  
    Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,  
    Tel. +48 22 5710 000, Fax. +48 22 5710 001  
    Portugal: see Spain  
    Romania: see Italy  
    Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
    Tel. +1 800 234 7381, Fax. +1 800 943 0087  
    China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
    72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
    Tel. +852 2319 7888, Fax. +852 2319 7700  
    Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
    Tel. +7 095 755 6918, Fax. +7 095 755 6919  
    Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
    Colombia: see South America  
    Czech Republic: see Austria  
    Tel. +65 350 2538, Fax. +65 251 6500  
    Slovakia: see Austria  
    Slovenia: see Italy  
    Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
    Tel. +45 33 29 3333, Fax. +45 33 29 3905  
    South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
    2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
    Tel. +27 11 471 5401, Fax. +27 11 471 5398  
    Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
    Tel. +358 9 615 800, Fax. +358 9 6158 0920  
    France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
    Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
    South America: Al. Vicente Pinzon, 173, 6th floor,  
    04547-130 SÃO PAULO, SP, Brazil,  
    Tel. +55 11 821 2333, Fax. +55 11 821 2382  
    Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
    Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
    Spain: Balmes 22, 08007 BARCELONA,  
    Tel. +34 93 301 6312, Fax. +34 93 301 4107  
    Hungary: see Austria  
    Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
    Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
    India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
    254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
    Tel. +91 22 493 8541, Fax. +91 22 493 0966  
    Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
    Tel. +41 1 488 2741 Fax. +41 1 488 3263  
    Indonesia: PT Philips Development Corporation, Semiconductors Division,  
    Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
    Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
    Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
    TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
    Ireland: Newstead, Clonskeagh, DUBLIN 14,  
    Tel. +353 1 7640 000, Fax. +353 1 7640 200  
    Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
    209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
    Tel. +66 2 745 4090, Fax. +66 2 398 0793  
    Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
    TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
    Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
    ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
    Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),  
    Tel. +39 039 203 6838, Fax +39 039 203 6800  
    Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
    252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
    Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
    TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057  
    United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
    MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
    Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
    Tel. +82 2 709 1412, Fax. +82 2 709 1415  
    United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
    Tel. +1 800 234 7381, Fax. +1 800 943 0087  
    Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
    Tel. +60 3 750 5214, Fax. +60 3 757 4880  
    Uruguay: see South America  
    Vietnam: see Singapore  
    Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
    Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
    Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
    Middle East: see Italy  
    Tel. +381 11 62 5344, Fax.+381 11 63 5777  
    For all other countries apply to: Philips Semiconductors,  
    Internet: http://www.semiconductors.philips.com  
    International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
    5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
    68  
    SCA  
    © Philips Electronics N.V. 1999  
    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
    The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
    without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
    under patent- or other industrial or intellectual property rights.  
    Printed in The Netherlands  
    135002/03/pp12  
    Date of release: 1999 Nov 15  
    Document order number: 9397 750 06272  
    配单直通车
    BYD77B,115产品参数
    型号:BYD77B,115
    生命周期：Obsolete
    包装说明：O-LELF-R2
    针数：2
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8541.10.00.80
    风险等级：5.8
    外壳连接：ISOLATED
    配置：SINGLE
    二极管元件材料：SILICON
    二极管类型：RECTIFIER DIODE
    JESD-30 代码：O-LELF-R2
    JESD-609代码：e3
    湿度敏感等级：1
    元件数量：1
    端子数量：2
    最高工作温度：175 °C
    最大输出电流：0.85 A
    封装主体材料：GLASS
    封装形状：ROUND
    封装形式：LONG FORM
    峰值回流温度（摄氏度）：NOT SPECIFIED
    认证状态：Not Qualified
    最大重复峰值反向电压：100 V
    最大反向恢复时间：0.025 µs
    表面贴装：YES
    技术：AVALANCHE
    端子面层：TIN
    端子形式：WRAP AROUND
    端子位置：END
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    Base Number Matches：1
    •  
    • 供货商
    • 型号 *
    • 数量*
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
  • 免费注册 忘记密码
    • 批量询价选中的记录已选中0条,每次最多15条。

    IC37:专业IC行业平台

    专业IC领域供求交易平台:提供全面的IC Datasheet资料和资讯，Datasheet 1000万数据，IC品牌1000多家。

    网站导航 Datasheet资料库 电子术语 电子百科
    服务中心 常见问题 委托交易 会员服务
    关于我们 公司简介 联系我们 免责申明

    产品索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

    深圳网络警察报警平台 公共信息安全网络监察 经营性网站备案信息 不良信息举报中心 工商网监电子标识 全国公安机关备案
    服务电话： 0755-32882616 0755-32882606 0755-32882608 0755-32882607 值班和投诉电话：13715251531 ©2004-2024 IC37网 版权所有：ic37.com 版权申明 公网安备44030402000606 粤ICP备13051289号-6
     复制成功！