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  • BYD77B图
  • 深圳市集创讯科技有限公司

     该会员已使用本站5年以上
  • BYD77B 现货库存
  • 数量12500 
  • 厂家NXP/恩智浦 
  • 封装SOD-87 
  • 批号24+ 
  • 原装进口正品现货,假一罚十价格优势
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  • 深圳市宗天技术开发有限公司

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  • BYD77B 现货库存
  • 数量20000 
  • 厂家NXP(恩智浦) 
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  • 只做原装正品原厂原包
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BYD77B 现货库存
  • 数量120000 
  • 厂家NXP 
  • 封装SOD87 
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  • 深圳市芯脉实业有限公司

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  • BYD77B 现货库存
  • 数量6889 
  • 厂家NXP 
  • 封装SOD87 
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  • 北京中其伟业科技有限公司

     该会员已使用本站16年以上
  • BYD77B T/R
  • 数量10407 
  • 厂家√ 欧美㊣品 
  • 封装贴◆插 
  • 批号16+ 
  • 特价,原装正品,绝对公司现货库存,原装特价!
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  • BYD77B135图
  • 北京中其伟业科技有限公司

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  • BYD77B135
  • 数量10410 
  • 厂家√ 欧美㊣品 
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  • 特价,原装正品,绝对公司现货库存,原装特价!
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  • BYD77B图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • BYD77B
  • 数量98500 
  • 厂家cy 
  • 封装sp 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • 深圳市得捷芯城科技有限公司

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  • BYD77B
  • 数量30 
  • 厂家PHILIPS/飞利浦 
  • 封装NA/ 
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  • BYD77B图
  • 深圳市晶美隆科技有限公司

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  • BYD77B
  • 数量13620 
  • 厂家NXP 
  • 封装SOD87 
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  • 深圳市毅创腾电子科技有限公司

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  • BYD77B
  • 数量15000 
  • 厂家PHI 
  • 封装LL34 
  • 批号22+ 
  • ★只做原装★正品现货★原盒原标★
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  • BYD77B图
  • 深圳市芯福林电子有限公司

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  • BYD77B
  • 数量65000 
  • 厂家TOSHIBA 
  • 封装DO-15 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • BYD77B图
  • 深圳市正纳电子有限公司

     该会员已使用本站15年以上
  • BYD77B
  • 数量26700 
  • 厂家NXP(恩智浦) 
  • 封装▊原厂封装▊ 
  • 批号▊ROHS环保▊ 
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  • 深圳市创芯联科技有限公司

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  • BYD77B
  • 数量13000 
  • 厂家NXP 
  • 封装SOD-87 
  • 批号2234+ 
  • 原厂货源/正品保证,诚信经营,欢迎询价
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  • 深圳市科庆电子有限公司

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  • BYD77B
  • 数量51000 
  • 厂家NXP 
  • 封装SOD87 
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  • 现货只售原厂原装可含13%税
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  • 深圳市晶美隆科技有限公司

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  • BYD77B
  • 数量12500 
  • 厂家NXP/恩智浦 
  • 封装SOD-87 
  • 批号24+ 
  • 原装进口正品现货,假一罚十价格优势
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  • BYD77B图
  • 深圳市华来深电子有限公司

     该会员已使用本站13年以上
  • BYD77B
  • 数量8560 
  • 厂家PHILIPS 
  • 封装LL41 
  • 批号17+ 
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  • BYD77B图
  • 深圳市正纳电子有限公司

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  • BYD77B
  • 数量12622 
  • 厂家NXP(恩智浦) 
  • 封装N/A 
  • 批号22+ 
  • 只做原装 欢迎询价 】】】
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  • BYD77B图
  • 深圳市能元时代电子有限公司

     该会员已使用本站10年以上
  • BYD77B
  • 数量38000 
  • 厂家PHILIPS 
  • 封装SOD87 
  • 批号24+ 
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  • 深圳市隆鑫创展电子有限公司

     该会员已使用本站15年以上
  • BYD77B
  • 数量30000 
  • 厂家TI 
  • 封装QFP80 
  • 批号2022+ 
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  • BYD77B图
  • 北京睿科新创电子中心

     该会员已使用本站9年以上
  • BYD77B
  • 数量7780 
  • 厂家 
  • 封装SMD 
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  • BYD77B图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • BYD77B
  • 数量6889 
  • 厂家NXP 
  • 封装SOD87 
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  • BYD77B115图
  • 深圳市一线半导体有限公司

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  • BYD77B115
  • 数量22000 
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  • 深圳市创思克科技有限公司

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  • BYD77B
  • 数量8580 
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  • 深圳市一线半导体有限公司

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  • BYD77B.
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  • 深圳市一线半导体有限公司

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产品型号BYD77B的概述

BYD77B芯片概述 BYD77B是一款由比亚迪(BYD)公司开发的高性能集成电路芯片,主要应用于无钥匙进入系统(Keyless Entry Systems)和智能汽车技术中。随着汽车行业向智能化、自动化的发展,BYD77B在信息通信、电子控制和车辆安全等方面的应用愈发广泛,且其相对低的功耗和高可靠性的特性使得它在市场中极具竞争力。 BYD77B的详细参数 BYD77B芯片的相关参数如下: 1. 工作电压:5V±10% 2. 工作温度范围:-40℃至+85℃ 3. 功耗:待机功耗小于5µA 4. 通信方式:支持ISO 14443A/B、ISO 15693和NFC协议 5. 数据传输速率:最大传输速率为848Kbps 6. 支持的射频频率:13.56MHz 7. 接口:TTL兼容电平 8. 封装类型:QFN、LQFP 厂家、包装与封装 BYD77B芯片的制造商为比亚迪半导体事业部,其产...

产品型号BYD77B的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BYD77 series  
Ultra fast low-loss  
controlled avalanche rectifiers  
Product specification  
1999 Nov 15  
Supersedes data of 1996 May 24  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
FEATURES  
DESCRIPTION  
hermetically sealed and fatigue free  
as coefficients of expansion of all  
used parts are matched.  
Glass passivated  
Cavity free cylindrical glass SOD87  
package through Implotec  
technology. This package is  
(1)  
High maximum operating  
temperature  
(1) Implotec is a trademark of Philips.  
Low leakage current  
Excellent stability  
Guaranteed avalanche energy  
absorption capability  
k
a
handbook, 4 columns  
Shipped in 8 mm embossed tape  
MAM061  
Smallest surface mount  
rectifier outline.  
Fig.1 Simplified outline (SOD87) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
repetitive peak reverse voltage  
BYD77A  
50  
100  
150  
200  
250  
300  
400  
V
V
V
V
V
V
V
BYD77B  
BYD77C  
BYD77D  
BYD77E  
BYD77F  
BYD77G  
VR  
continuous reverse voltage  
BYD77A  
50  
100  
150  
200  
250  
300  
400  
V
V
V
V
V
V
V
BYD77B  
BYD77C  
BYD77D  
BYD77E  
BYD77F  
BYD77G  
IF(AV)  
average forward current  
BYD77A to D  
BYD77E to G  
average forward current  
BYD77A to D  
BYD77E to G  
Ttp = 105 °C; see Figs 2 and 3;  
averaged over any 20 ms period;  
see also Figs 10 and 11  
2.00  
1.85  
A
A
IF(AV)  
Tamb = 60 °C; PCB mounting (see  
Fig.16); see Figs 4 and 5;  
averaged over any 20 ms period;  
see also Figs 10 and 11  
0.85  
0.80  
A
A
1999 Nov 15  
2
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
IFRM  
repetitive peak forward current  
BYD77A to D  
Ttp = 105 °C; see Figs 6 and 7  
15  
13  
A
A
BYD77E to G  
IFRM  
repetitive peak forward current  
BYD77A to D  
Tamb = 60 °C; see Figs 8 and 9  
8.5  
8.0  
25  
A
A
A
BYD77E to G  
IFSM  
non-repetitive peak forward current  
t = 10 ms half sine wave; Tj = Tj max  
prior to surge; VR = VRRMmax  
ERSM  
non-repetitive peak reverse  
avalanche energy  
L = 120 mH; Tj = 25 °C prior to  
surge; inductive load switched off  
10 mJ  
Tstg  
Tj  
storage temperature  
junction temperature  
65  
65  
+175 °C  
+175 °C  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 1 A; Tj = Tj max  
MIN.  
TYP.  
MAX.  
UNIT  
VF  
;
see Figs 12 and 13  
BYD77A to D  
BYD77E to G  
forward voltage  
BYD77A to D  
BYD77E to G  
0.75  
0.83  
V
V
VF  
IF = 1 A;  
see Figs 12 and 13  
0.98  
1.05  
V
V
V(BR)R  
reverse avalanche breakdown  
voltage  
IR = 0.1 mA  
BYD77A  
BYD77B  
55  
110  
165  
220  
275  
330  
440  
1
V
V
BYD77C  
V
BYD77D  
V
BYD77E  
V
BYD77F  
V
BYD77G  
reverse current  
V
IR  
VR = VRRMmax  
see Fig.14  
;
;
µA  
VR = VRRMmax  
100  
µA  
Tj = 165 °C; see Fig.14  
trr  
reverse recovery time  
BYD77A to D  
when switched from  
IF = 0.5 A to IR = 1 A;  
measured at IR = 0.25 A;  
see Fig.18  
25  
50  
ns  
ns  
BYD77E to G  
1999 Nov 15  
3
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
SYMBOL  
PARAMETER  
diode capacitance  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Cd  
f = 1 MHz; VR = 0 V;  
see Fig.15  
BYD77A to D  
BYD77E to G  
50  
40  
pF  
pF  
maximum slope of reverse recovery when switched from  
dIR  
--------  
dt  
current  
BYD77A to D  
BYD77E to G  
IF = 1 A to VR 30 V and  
dIF/dt = 1 A/µs;  
see Fig.17  
4
5
A/µs  
A/µs  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
30  
K/W  
K/W  
note 1  
150  
Note  
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.16.  
For more information please refer to the “General Part of associated Handbook”.  
1999 Nov 15  
4
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
GRAPHICAL DATA  
MCD598  
MCD596  
3
4
handbook, halfpage  
handbook, halfpage  
I
F(AV)  
I
F(AV)  
(A)  
(A)  
3
2
2
1
1
0
0
0
0
100  
200  
o
100  
200  
o
T
( C)  
T
( C)  
tp  
tp  
BYD77A to D  
BYD77E to G  
a = 1.42; VR = VRRMmax; δ = 0.5.  
Switched mode application.  
a = 1.42; VR = VRRMmax; δ = 0.5.  
Switched mode application.  
Fig.2 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
Fig.3 Maximum permissible average forward  
current as a function of tie-point temperature  
(including losses due to reverse leakage).  
MCD595  
MCD597  
1.0  
1.2  
handbook, halfpage  
handbook, halfpage  
I
F(AV)  
(A)  
I
F(AV)  
(A)  
0.8  
0.5  
0.4  
0
0
0
100  
200  
0
100  
200  
o
( C)  
o
( C)  
T
T
amb  
amb  
BYD77A to D  
BYD77E to G  
a = 1.42; VR = VRRMmax; δ = 0.5.  
a = 1.42; VR = VRRMmax; δ = 0.5.  
Device mounted as shown in Fig.16.  
Switched mode application.  
Device mounted as shown in Fig.16.  
Switched mode application.  
Fig.4 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
Fig.5 Maximum permissible average forward  
current as a function of ambient temperature  
(including losses due to reverse leakage).  
1999 Nov 15  
5
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
MCD593  
20  
δ =  
0.05  
I
FRM  
(
)
A
0.1  
0.2  
10  
0.5  
1
0
10  
0
1
-2  
-1  
2
3
4
10  
10  
10  
10  
10  
10  
(
)
t
ms  
p
BYD77A to D  
Ttp = 105 °C; Rth j-tp = 30 K/W.  
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
V
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
MCD591  
20  
I
δ =  
0.05  
FRM  
(
)
A
0.1  
0.2  
10  
0.5  
1
0
10  
0
1
-2  
-1  
2
3
4
10  
10  
10  
10  
10  
10  
(
)
t
ms  
p
BYD77E to G  
Ttp = 105°C; Rth j-tp = 30 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.  
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
1999 Nov 15  
6
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
MCD592  
10  
I
FRM  
δ =  
0.05  
(
)
A
0.1  
0.2  
5
0.5  
1
0
10  
0
1
-2  
-1  
2
3
4
10  
10  
10  
10  
10  
10  
(
)
t
ms  
p
BYD77A to D  
Tamb = 60 °C; Rth j-a = 150 K/W.  
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.  
V
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
MCD590  
10  
I
FRM  
(
)
A
δ =  
0.05  
0.1  
0.2  
5
0.5  
1
0
10  
0
1
-2  
-1  
2
3
4
10  
10  
10  
10  
10  
10  
(
)
t
ms  
p
BYD77E to G  
Tamb = 60 °C; Rth j-a = 150 K/W.  
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.  
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.  
1999 Nov 15  
7
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
MGC530  
MGC529  
2
2
handbook, halfpage  
handbook, halfpage  
a=3 2.5  
2
1.57 1.42  
a=3 2.5 2 1.57 1.42  
P
(W)  
P
(W)  
1
1
0
0
0
0
1
2
1
2
I
(A)  
I
(A)  
F(AV)  
F(AV)  
BYD77A to D  
BYD77E to G  
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.  
Fig.10 Maximum steady state power dissipation  
(forward plus leakage current losses,  
excluding switching losses) as a function  
of average forward current.  
Fig.11 Maximum steady state power dissipation  
(forward plus leakage current losses,  
excluding switching losses) as a function  
of average forward current.  
MCD594  
MGC531  
10  
10  
handbook, halfpage  
handbook, halfpage  
I
I
F
F
(A)  
(A)  
8
6
4
2
0
8
6
4
2
0
0
1
2
0
1
2
3
V
(V)  
V
(V)  
F
F
BYD77A to D  
BYD77E to G  
Dotted line: Tj = 175 °C.  
Solid line: Tj = 25 °C.  
Dotted line: Tj = 175 °C.  
Solid line: Tj = 25 °C.  
Fig.12 Forward current as a function of forward  
voltage; maximum values.  
Fig.13 Forward current as a function of forward  
voltage; maximum values.  
1999 Nov 15  
8
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
MGA853  
MCD608  
2
3
10  
10  
handbook, halfpage  
handbook, halfpage  
I
R
(µA)  
C
d
(pF)  
2
10  
10  
A, B, C, D  
E, F, G  
10  
1
1
2
3
0
100  
200  
o
( C)  
1
10  
10  
10  
T
j
V
(V)  
R
VR = VRRMmax  
.
f = 1 MHz; Tj = 25 °C.  
Fig.14 Reverse current as a function of junction  
temperature; maximum values.  
Fig.15 Diode capacitance as a function of reverse  
voltage; typical values.  
50  
I
ndbook, halfpage  
F
dI  
F
dt  
t
rr  
4.5  
t
10%  
50  
dI  
R
dt  
2.5  
100%  
I
R
MGC499  
1.25  
MSB213  
Dimensions in mm.  
Fig.16 Printed-circuit board for surface mounting.  
Fig.17 Reverse recovery definitions.  
1999 Nov 15  
9
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
I
F
DUT  
(A)  
+
0.5  
t
rr  
25 V  
10 Ω  
1 Ω  
50 Ω  
0
0.25  
0.5  
t
I
R
(A)  
MAM057  
1.0  
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns.  
Source impedance: 50 ; tr 15 ns.  
Fig.18 Test circuit and reverse recovery time waveform and definition.  
1999 Nov 15  
10  
Philips Semiconductors  
Product specification  
Ultra fast low-loss  
controlled avalanche rectifiers  
BYD77 series  
PACKAGE OUTLINE  
Hermetically sealed glass surface mounted package;  
ImplotecTM(1) technology; 2 connectors  
SOD87  
k
a
(2)  
D
D
1
L
L
H
DIMENSIONS (mm are the original dimensions)  
D1  
L
D
H
UNIT  
0
1
2 mm  
scale  
2.1  
2.0  
2.0  
1.8  
3.7  
3.3  
mm  
0.3  
Notes  
1. Implotec is a trademark of Philips.  
2. The marking indicates the cathode.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
99-03-31  
99-06-04  
SOD87  
100H03  
DEFINITIONS  
Data Sheet Status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Preliminary specification  
Product specification  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Nov 15  
11  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,  
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,  
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
Pakistan: see Singapore  
Belgium: see The Netherlands  
Brazil: see South America  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 68 9211, Fax. +359 2 68 9102  
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,  
Tel. +48 22 5710 000, Fax. +48 22 5710 001  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Colombia: see South America  
Czech Republic: see Austria  
Tel. +65 350 2538, Fax. +65 251 6500  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,  
Tel. +45 33 29 3333, Fax. +45 33 29 3905  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,  
Tel. +27 11 471 5401, Fax. +27 11 471 5398  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615 800, Fax. +358 9 6158 0920  
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 2353 60, Fax. +49 40 2353 6300  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 93 301 6312, Fax. +34 93 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,  
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813  
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),  
Tel. +39 039 203 6838, Fax +39 039 203 6800  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
68  
SCA  
© Philips Electronics N.V. 1999  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
135002/03/pp12  
Date of release: 1999 Nov 15  
Document order number: 9397 750 06272  
配单直通车
BYD77B产品参数
型号:BYD77B
生命周期:Obsolete
Reach Compliance Code:compliant
风险等级:5.75
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