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  • 北京元坤伟业科技有限公司

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  • BYG10D-M3/TR
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产品型号BYG10D-M3/TR3的Datasheet PDF文件预览

BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y  
www.vishay.com  
Vishay General Semiconductor  
Standard Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Controlled avalanche characteristics  
• Glass passivated junction  
• Low reverse current  
• High surge current capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
200 V, 400 V, 600 V, 800 V,  
1000 V, 1600 V  
VRRM  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
IFSM  
30 A  
1.0 μA  
IR  
VF  
1.15 V  
Base P/N-M3  
commercial grade  
Base P/NHM3  
AEC-Q101 qualified  
-
halogen-free, RoHS-compliant, and  
ER  
20 mJ  
TJ max.  
Package  
Diode variations  
150 °C  
-
halogen-free, RoHS-compliant, and  
DO-214AC (SMA)  
Single die  
Terminals: Matte tin plated leads, solderable per J-STD-002  
and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
Note  
BYG10Y for commercial grade only  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT  
Device marking code  
BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
200  
400  
600  
800  
1000  
1600  
V
A
1.5  
30  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Pulse energy in avalanche mode,  
non repetitive (inductive load switch off)  
ER  
20  
mJ  
°C  
I
(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)  
(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y)  
I
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Revision: 15-Jan-14  
Document Number: 89472  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y  
www.vishay.com  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
IF = 1 A  
IF = 1.5 A  
SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT  
Maximum  
1.1  
instantaneous  
TJ = 25 °C  
VF  
V
1.15  
forward voltage (1)  
TJ = 25 °C  
1
Maximum DC  
reverse current  
V
R = VRRM  
IR  
trr  
μA  
μs  
TJ = 100 °C  
10  
Maximum reverse  
recovery time  
IF = 0.5 A, IR = 1.0 A,  
rr = 0.25 A  
4
I
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT  
Typical thermal resistance, junction to lead  
RJL  
25  
°C/W  
(1)  
RJA  
RJA  
RJA  
150  
125  
100  
(2)  
(3)  
Typical thermal resistance, junction to ambient  
°C/W  
Notes  
(1)  
Mounted on epoxy-glass hard tissue  
(2)  
(3)  
Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu  
Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
BYG10D-M3/TR  
BYG10D-M3/TR3  
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY  
DELIVERY MODE  
0.064  
0.064  
TR  
1800  
7500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
TR3  
BYG10DHM3/TR (1)  
BYG10DHM3/TR3 (1)  
0.064  
0.064  
TR  
1800  
7500  
7" diameter plastic tape and reel  
13" diameter plastic tape and reel  
TR3  
Note  
(1)  
AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
100  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
VR = VRRM  
Half Sine-Wave  
RθJA 25 K/W  
TJ = 150 °C  
1
TJ = 25 °C  
0.1  
0.01  
0.001  
RθJA 125 K/W  
RθJA 150 K/W  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
Forward Voltage (V)  
Ambient Temperature (°C)  
Fig. 1 - Forward Current vs. Forward Voltage  
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature  
Revision: 15-Jan-14  
Document Number: 89472  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y  
www.vishay.com  
Vishay General Semiconductor  
1000  
100  
10  
5000  
VR = VRRM  
TA = 125 °C  
4000  
3000  
2000  
1000  
0
TA = 100 °C  
TA = 75 °C  
TA = 50 °C  
TA = 25 °C  
IR = 0.5 A, iR = 0.125 A  
1
25  
50  
75  
100  
125  
150  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Junction Temperature (°C)  
Forward Current (A)  
Fig. 3 - Reverse Current vs. Junction Temperature  
Fig. 6 - Reverse Recovery Time vs. Forward Current  
400  
2000  
VR = VRRM  
TA = 125 °C  
350  
300  
250  
200  
150  
100  
50  
1600  
1200  
800  
400  
0
TA = 100 °C  
PR - Limit at 100 % VR  
TA = 75 °C  
TA = 50 °C  
TA = 25 °C  
PR - Limit at 80 % VR  
IR = 0.5 A, iR = 0.125 A  
0
25  
50  
75  
100  
125  
150  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Junction Temperature (°C)  
Forward Current (A)  
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature  
Fig. 7 - Reverse Recovery Charge vs. Forward Current  
30  
f = 1 MHz  
25  
20  
15  
10  
5
0
0.1  
1
10  
100  
Reverse Voltage (V)  
Fig. 5 - Diode Capacitance vs. Reverse Voltage  
Revision: 15-Jan-14  
Document Number: 89472  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y  
www.vishay.com  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
DO-214AC (SMA)  
Cathode Band  
Mounting Pad Layout  
0.074 (1.88)  
0.066 (1.68)  
MAX.  
MIN.  
0.110 (2.79)  
0.100 (2.54)  
0.065 (1.65)  
0.049 (1.25)  
0.177 (4.50)  
0.157 (3.99)  
0.060 (1.52)  
MIN.  
0.012 (0.305)  
0.006 (0.152)  
0.208 (5.28)  
REF.  
0.090 (2.29)  
0.078 (1.98)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Revision: 15-Jan-14  
Document Number: 89472  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1
配单直通车
BYG10D-M3/TR产品参数
型号:BYG10D-M3/TR
生命周期:Active
IHS 制造商:VISHAY SEMICONDUCTORS
包装说明:R-PDSO-C2
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.80
风险等级:5.38
其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2
JESD-609代码:e3
湿度敏感等级:1
最大非重复峰值正向电流:30 A
元件数量:1
相数:1
端子数量:2
最高工作温度:150 °C
最低工作温度:-55 °C
最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
最大重复峰值反向电压:200 V
最大反向恢复时间:4 µs
表面贴装:YES
技术:AVALANCHE
端子面层:Matte Tin (Sn)
端子形式:C BEND
端子位置:DUAL
处于峰值回流温度下的最长时间:30
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