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产品型号BYG22B-E3的Datasheet PDF文件预览

BYG22

Vishay Semiconductors

VISHAY

Ultra Fast Avalanche SMD Rectifier

Features

• Controlled avalanche characteristic

• Glass passivated junction

• Low reverse current

• Low forward voltage

• Soft recovery characteristic

• Very fast reverse recovery time

• Good switching characteristics

• Wave and reflow solderable

15811

Applications

Surface mounting

Super fast rectifier

Freewheeling diodes in SMPS and converters

Snubber diodes

Parts Table

Part

Type differentiation

V_R= 50 V @ I_FAV= 2 A

Package

BYG22A

BYG22B

BYG22D

DO-214AC

_R= 100 V @ I_FAV= 2 A

_R= 200 V @ I_FAV= 2 A

DO-214AC

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Reverse voltage = Repetitive

peak reverse voltage

BYG22A

V_R= V_RRM

BYG22B

BYG22D

V_R= V_RRM

100

200

Peak forward surge current

Average forward current

t_p= 10 ms, half sinewave

I_FSM

I_FAV

Junction and storage

temperature range

T_j= T_stg

- 55 to + 150

°C

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

_(BR)R= 1 A, T_j= 25 °C

E_R

Document Number 86011

Rev. 1.5, 09-Oct-00

www.vishay.com

BYG22

Vishay Semiconductors

VISHAY

Maximum Thermal Resistance

T_amb= 25 °C, unless otherwise specified

Parameter

Junction lead

Junction ambient

Test condition

Part

Symbol

R_thJL

Value

Unit

K/W

T_L= const.

mounted on epoxy-glass hard

tissue

R_thJA

150

K/W

mounted on epoxy-glass hard

tissue, 50 mm²35 µm Cu

mounted on Al-oxid-ceramic

(Al₂O₃), 50 mm²35 µm Cu

125

K/W

100

K/W

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

V_F

Min

Typ.

Max

Unit

Forward voltage

I_F= 1 A

I_F= 2 A

V_F

I_R

t_rr

1.1

Reverse current

_R= V_RRM

_R= V_RRM, T_j=100 °C

µA

Reverse recovery time

I_F= 0.5 A, I_R= 1 A, i_R= 0.25 A

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

10.000

1.000

0.100

0.010

0.001

2.5

2.0

1.5

1.0

0.5

0.0

V =V

half sinewave

RRM

T =150°C

=25K/W

thJA

T =25°C

+125K/W

+150K/W

thJA

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

– Forward Voltage ( V )

20 40 60 80 100 120 140 160

– Ambient Temperature ( °C )

16448

16449

amb

Figure 1. Forward Current vs. Forward Voltage

Figure 2. Max. Average Forward Current vs. Ambient Temperature

www.vishay.com

Document Number 86011

Rev. 1.5, 09-Oct-00

BYG22

Vishay Semiconductors

VISHAY

140

120

100

amb

=125°C

100

= V

RRM

100°C

75°C

50°C

25°C

I =0.5A, i =0.125A

1.0

0.2

0.4

0.6

0.8

100

125

150

– Forward Current ( A )

16450

T – Junction Temperature ( °C )

94 9353

Figure 3. Reverse Current vs. Junction Temperature

Figure 6. Max. Reverse Recovery Time vs. Forward Current

=125°C

amb

= V

RRM

100°C

75°C

50°C

P –Limit

@100%V

25°C

P –Limit

@80%V

I =0.5A, i =0.125A

1.0

0.2

0.4

0.6

0.8

100

125

150

– Forward Current ( A )

16451

T – Junction Temperature ( °C )

94 9354

Figure 4. Max. Reverse Power Dissipation vs. Junction

Temperature

Figure 7. Max. Reverse Recovery Charge vs. Forward Current

f=1MHz

0.1

1.0

V – Reverse Voltage ( V )

10.0

100.0

16452

Figure 5. Diode Capacitance vs. Reverse Voltage

Document Number 86011

Rev. 1.5, 09-Oct-00

www.vishay.com

BYG22

Vishay Semiconductors

VISHAY

1000

125K/W DC

100

t /T=0.5

t /T=0.2

t /T=0.1

t /T=0.05

t /T=0.02

Single Pulse

t /T=0.01

–5

–4

–3

–2

–1

– Pulse Length ( s )

94 9339

Figure 8. Thermal Response

Package Dimensions in mm (Inches)

5.3 +0.2 / -0.4

4.4 +0.1 / -0.2

ISO Method E

technical drawings

according to DIN

specifications

0.2

0.1 0.07

3 +0.3 / -0.5

Plastic case JEDEC DO 214

similar to SMA

Cathode indicated by a band

14275-1

www.vishay.com

Document Number 86011

Rev. 1.5, 09-Oct-00

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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BYG22B-E3产品参数

型号:	BYG22B-E3
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
零件包装代码：	DO-214
包装说明：	R-PDSO-C2
针数：	2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.62
其他特性：	FREEWHEELING DIODE, SNUBBER DIODE
应用：	SUPER FAST SOFT RECOVERY
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	DO-214
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	35 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	2 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
最大重复峰值反向电压：	100 V
最大反向恢复时间：	0.025 µs
表面贴装：	YES
技术：	AVALANCHE
端子面层：	Matte Tin (Sn)
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

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