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    • BZT03-C110图

    • 深圳市芳益电子科技有限公司

       该会员已使用本站10年以上
    • BZT03-C110
    • 数量60000 
    • 厂家PH 
    • 封装SOD-57 
    • 批号2023+ 
    • 原装现货库存 低价出售 欢迎加Q详谈 诚信经营 可长期合作
    • QQ:498361569QQ：498361569 复制
      QQ:389337416QQ：389337416 复制
    • 0755-13631573466 QQ:498361569QQ:389337416

    产品型号BZT03-C11的Datasheet PDF文件预览

    DISCRETE SEMICONDUCTORS  
    DATA SHEET  
    BZT03 series  
    Voltage regulator diodes  
    1996 Jun 11  
    Product specification  
    Supersedes data of April 1992  
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    construction. This package is  
    FEATURES  
    DESCRIPTION  
    hermetically sealed and fatigue free  
    as coefficients of expansion of all  
    used parts are matched.  
    • Glass passivated  
    Rugged glass SOD57 package, using  
    a high temperature alloyed  
    • High maximum operating  
    temperature  
    • Low leakage current  
    • Excellent stability  
    k
    a
    • Zener working voltage range:  
    7.5 to 270 V for 38 types  
    MAM204  
    • Transient suppressor stand-off  
    voltage range:  
    6.2 to 430 V for 45 types  
    Fig.1 Simplified outline (SOD57) and symbol.  
    • Available in ammo-pack.  
    LIMITING VALUES  
    In accordance with the Absolute Maximum Rating System (IEC 134).  
    SYMBOL  
    PARAMETER  
    CONDITIONS  
    MIN.  
    MAX.  
    3.25  
    1.30  
    UNIT  
    Ptot  
    total power dissipation  
    Ttp = 25 °C; lead length 10 mm; see Fig.2  
    −
    −
    W
    T
    amb = 45 °C; see Fig.2;  
    PCB mounted (see Fig.6)  
    W
    W
    W
    W
    PZRM  
    PZSM  
    PRSM  
    repetitive peak reverse power  
    dissipation  
    −
    −
    −
    10  
    600  
    300  
    non-repetitive peak reverse  
    power dissipation  
    tp = 100 µs; square pulse;  
    Tj = 25 °C prior to surge; see Fig.3  
    non-repetitive peak reverse  
    power dissipation  
    10/1000 µs exponential pulse (see Fig.4);  
    Tj = 25 °C prior to surge  
    Tstg  
    Tj  
    storage temperature  
    junction temperature  
    −65  
    −65  
    +175 °C  
    +175 °C  
    1996 Jun 11  
    2
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    ELECTRICAL CHARACTERISTICS  
    Total series  
    Tj = 25 °C unless otherwise specified.  
    SYMBOL  
    PARAMETER  
    forward voltage  
    CONDITIONS  
    IF = 0.5 A; see Fig.5  
    MAX.  
    UNIT  
    VF  
    1.2  
    V
    Per type when used as voltage regulator diodes  
    Tj = 25 °C unless otherwise specified.  
    DIFFERENTIAL TEMPERATURE  
    TEST  
    REVERSE CURRENT  
    WORKING VOLTAGE  
    VZ (V) at IZ  
    TYPE  
    No.  
    RESISTANCE  
    COEFFICIENT CURRENT at REVERSE VOLTAGE  
    SUFFIX  
    rdif (Ω) at IZ  
    SZ (%/K) at IZ  
    IR (µA)  
    (1)  
    IZ (mA)  
    VR (V)  
    MIN.  
    NOM.  
    MAX.  
    TYP.  
    MAX.  
    MIN.  
    MAX.  
    MAX.  
    C7V5  
    C8V2  
    C9V1  
    C10  
    C11  
    C12  
    C13  
    C15  
    C16  
    C18  
    C20  
    C22  
    C24  
    C27  
    C30  
    C33  
    C36  
    C39  
    C43  
    C47  
    C51  
    C56  
    C62  
    C68  
    C75  
    C82  
    C91  
    7.0  
    7.7  
    8.5  
    9.4  
    10.4  
    11.4  
    12.4  
    13.8  
    15.3  
    16.8  
    18.8  
    20.8  
    22.8  
    25.1  
    28  
    7.5  
    8.2  
    9.1  
    10  
    11  
    7.9  
    8.7  
    9.6  
    10.6  
    11.6  
    12.7  
    14.1  
    15.6  
    17.1  
    19.1  
    21.2  
    23.3  
    25.6  
    28.9  
    32  
    1
    1
    2
    2
    0.00  
    0.03  
    0.03  
    0.05  
    0.05  
    0.05  
    0.05  
    0.05  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.07  
    0.07  
    0.07  
    0.07  
    0.08  
    0.08  
    0.08  
    0.08  
    0.09  
    0.07  
    0.08  
    0.08  
    0.09  
    0.10  
    0.10  
    0.10  
    0.10  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.12  
    0.12  
    0.12  
    0.12  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    100  
    100  
    50  
    50  
    50  
    50  
    50  
    50  
    25  
    25  
    25  
    25  
    25  
    25  
    25  
    25  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    5
    750  
    600  
    20  
    10  
    4
    5.6  
    6.2  
    6.8  
    7.5  
    8.2  
    9.1  
    10  
    11  
    2
    4
    2
    4
    4
    7
    12  
    13  
    15  
    16  
    18  
    20  
    22  
    24  
    27  
    30  
    33  
    36  
    39  
    43  
    47  
    51  
    56  
    62  
    68  
    75  
    82  
    91  
    4
    7
    3
    5
    10  
    10  
    15  
    15  
    15  
    15  
    15  
    15  
    15  
    15  
    40  
    40  
    45  
    45  
    60  
    60  
    80  
    80  
    100  
    100  
    200  
    2
    5
    1
    6
    1
    12  
    13  
    15  
    16  
    18  
    20  
    22  
    24  
    27  
    30  
    33  
    36  
    39  
    43  
    47  
    51  
    56  
    62  
    68  
    6
    1
    6
    1
    6
    1
    7
    1
    7
    1
    8
    1
    31  
    35  
    8
    1
    34  
    38  
    21  
    21  
    24  
    24  
    25  
    25  
    25  
    25  
    30  
    30  
    60  
    1
    37  
    41  
    1
    40  
    46  
    1
    44  
    50  
    1
    48  
    54  
    1
    52  
    60  
    1
    58  
    66  
    1
    64  
    72  
    1
    70  
    79  
    1
    77  
    87  
    1
    85  
    96  
    1
    1996 Jun 11  
    3
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    DIFFERENTIAL TEMPERATURE  
    TEST  
    REVERSE CURRENT  
    WORKING VOLTAGE  
    VZ (V) at IZ  
    TYPE  
    No.  
    RESISTANCE  
    COEFFICIENT CURRENT at REVERSE VOLTAGE  
    SUFFIX  
    rdif (Ω) at IZ  
    SZ (%/K) at IZ  
    IR (µA)  
    (1)  
    IZ (mA)  
    VR (V)  
    MIN.  
    NOM.  
    100  
    110  
    120  
    130  
    150  
    160  
    180  
    200  
    220  
    240  
    270  
    MAX.  
    106  
    116  
    127  
    141  
    156  
    171  
    191  
    212  
    233  
    256  
    289  
    TYP.  
    60  
    MAX.  
    200  
    250  
    250  
    300  
    300  
    350  
    400  
    500  
    750  
    850  
    1000  
    MIN.  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    MAX.  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    MAX.  
    94  
    5
    5
    5
    5
    5
    5
    5
    5
    2
    2
    2
    1
    1
    1
    1
    1
    1
    1
    1
    1
    1
    1
    75  
    82  
    C100  
    C110  
    C120  
    C130  
    C150  
    C160  
    C180  
    C200  
    C220  
    C240  
    C270  
    104  
    80  
    114  
    124  
    138  
    153  
    168  
    188  
    208  
    228  
    251  
    80  
    91  
    110  
    130  
    150  
    180  
    200  
    350  
    400  
    450  
    100  
    110  
    120  
    130  
    150  
    160  
    180  
    200  
    Note  
    1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100.  
    1996 Jun 11  
    4
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    Per type when used as transient suppressor diodes  
    Tj = 25 °C unless otherwise specified.  
    REVERSE  
    CURRENT at  
    STAND-OFF  
    VOLTAGE  
    REVERSE  
    TEMPERATURE  
    BREAKDOWN  
    COEFFICIENT  
    VOLTAGE  
    TEST  
    CURRENT  
    CLAMPING  
    VOLTAGE  
    TYPE  
    NUMBER  
    V
    (BR)R (V)  
    at Itest  
    at IRSM  
    (A)  
    note 1  
    SZ (%/K) at Itest  
    V(CL)R (V)  
    MAX.  
    IR (µA)  
    Itest  
    (mA)  
    at VR  
    (V)  
    MIN.  
    MIN.  
    MAX.  
    MAX.  
    BZT03-C7V5  
    BZT03-C8V2  
    BZT03-C9V1  
    BZT03-C10  
    BZT03-C11  
    BZT03-C12  
    BZT03-C13  
    BZT03-C15  
    BZT03-C16  
    BZT03-C18  
    BZT03-C20  
    BZT03-C22  
    BZT03-C24  
    BZT03-C27  
    BZT03-C30  
    BZT03-C33  
    BZT03-C36  
    BZT03-C39  
    BZT03-C43  
    BZT03-C47  
    BZT03-C51  
    BZT03-C56  
    BZT03-C62  
    BZT03-C68  
    BZT03-C75  
    BZT03-C82  
    BZT03-C91  
    BZT03-C100  
    BZT03-C110  
    BZT03-C120  
    BZT03-C130  
    BZT03-C150  
    BZT03-C160  
    7.0  
    7.7  
    8.5  
    9.4  
    10.4  
    11.4  
    12.4  
    13.8  
    15.3  
    16.8  
    18.8  
    20.8  
    22.8  
    25.1  
    28  
    0.00  
    0.03  
    0.03  
    0.05  
    0.05  
    0.05  
    0.05  
    0.05  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.06  
    0.07  
    0.07  
    0.07  
    0.07  
    0.08  
    0.08  
    0.08  
    0.08  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.07  
    0.08  
    0.08  
    0.09  
    0.10  
    0.10  
    0.10  
    0.10  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.11  
    0.12  
    0.12  
    0.12  
    0.12  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    100  
    100  
    50  
    50  
    50  
    50  
    50  
    50  
    25  
    25  
    25  
    25  
    25  
    25  
    25  
    25  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    10  
    5
    11.3  
    12.3  
    13.3  
    14.8  
    15.7  
    17.0  
    18.9  
    20.9  
    22.9  
    25.6  
    28.4  
    31.0  
    33.8  
    38.1  
    42.2  
    46.2  
    50.1  
    54.1  
    60.7  
    65.5  
    70.8  
    78.6  
    86.5  
    94.4  
    103.5  
    114.0  
    126  
    26.5  
    24.4  
    22.7  
    20.3  
    19.1  
    17.7  
    15.9  
    14.4  
    13.1  
    11.7  
    10.6  
    9.7  
    1500  
    1200  
    100  
    20  
    5
    6.2  
    6.8  
    7.5  
    8.2  
    9.1  
    10  
    5
    5
    11  
    5
    12  
    5
    13  
    5
    15  
    5
    16  
    5
    18  
    8.9  
    5
    20  
    7.9  
    5
    22  
    7.1  
    5
    24  
    31  
    6.5  
    5
    27  
    34  
    6.0  
    5
    30  
    37  
    5.5  
    5
    33  
    40  
    4.9  
    5
    36  
    44  
    4.6  
    5
    39  
    48  
    4.2  
    5
    43  
    52  
    3.8  
    5
    47  
    58  
    3.5  
    5
    51  
    64  
    3.2  
    5
    56  
    70  
    2.9  
    5
    62  
    77  
    2.6  
    5
    68  
    85  
    2.4  
    5
    75  
    94  
    5
    139  
    2.2  
    5
    82  
    104  
    114  
    124  
    138  
    153  
    5
    152  
    2.0  
    5
    91  
    5
    167  
    1.8  
    5
    100  
    110  
    120  
    130  
    5
    185  
    1.6  
    5
    5
    204  
    1.5  
    5
    5
    224  
    1.3  
    5
    1996 Jun 11  
    5
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    REVERSE  
    CURRENT at  
    STAND-OFF  
    VOLTAGE  
    REVERSE  
    BREAKDOWN  
    VOLTAGE  
    TEMPERATURE  
    COEFFICIENT  
    TEST  
    CURRENT  
    CLAMPING  
    VOLTAGE  
    TYPE  
    NUMBER  
    V(BR)R (V)  
    at Itest  
    at IRSM  
    (A)  
    note 1  
    SZ (%/K) at Itest  
    V(CL)R (V)  
    MAX.  
    IR (µA)  
    Itest  
    (mA)  
    at VR  
    (V)  
    MIN.  
    MIN.  
    MAX.  
    MAX.  
    168  
    188  
    208  
    228  
    251  
    280  
    310  
    340  
    370  
    400  
    440  
    480  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.09  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    0.13  
    5
    5
    2
    2
    2
    2
    2
    2
    2
    2
    2
    2
    249  
    276  
    305  
    336  
    380  
    419  
    459  
    498  
    537  
    603  
    655  
    707  
    1.2  
    5
    5
    5
    5
    5
    5
    5
    5
    5
    5
    5
    5
    150  
    160  
    180  
    200  
    220  
    240  
    270  
    300  
    330  
    360  
    390  
    430  
    BZT03-C180  
    BZT03-C200  
    BZT03-C220  
    BZT03-C240  
    BZT03-C270  
    BZT03-C300  
    BZT03-C330  
    BZT03-C360  
    BZT03-C390  
    BZT03-C430  
    BZT03-C470  
    BZT03-C510  
    1.1  
    1.0  
    0.9  
    0.8  
    0.72  
    0.65  
    0.60  
    0.56  
    0.50  
    0.45  
    0.42  
    Note  
    1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.  
    THERMAL CHARACTERISTICS  
    SYMBOL  
    Rth j-tp  
    PARAMETER  
    CONDITIONS  
    lead length = 10 mm  
    note 1  
    VALUE  
    46  
    UNIT  
    K/W  
    K/W  
    thermal resistance from junction to tie-point  
    thermal resistance from junction to ambient  
    Rth j-a  
    100  
    Note  
    1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6.  
    For more information please refer to the “General Part of associated Handbook”.  
    1996 Jun 11  
    6
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    GRAPHICAL DATA  
    MBH534  
    MBH535  
    4
    10  
    4
    handbook, halfpage  
    handbook, halfpage  
    P
    tot  
    P
    (W)  
    ZSM  
    (W)  
    3
    3
    10  
    2
    1
    0
    2
    10  
    10  
    10  
    −2  
    −1  
    0
    100  
    200  
    10  
    1
    t (ms) 10  
    p
    T (°C)  
    Solid line: tie-point temperature; lead length = 10 mm.  
    Tj = 25 °C prior to surge.  
    Dotted line: ambient temperature; PCB mounted as shown in Fig 6.  
    Fig.3 Maximum non-repetitive peak reverse  
    power dissipation as a function of pulse  
    duration (square pulse).  
    Fig.2 Maximum total power dissipation as a  
    function of temperature.  
    MBH536  
    I
    3
    handbook, halfpage  
    RSM  
    handbook, halfpage  
    (%)  
    I
    F
    100  
    90  
    (A)  
    2
    50  
    1
    0
    10  
    t
    t
    1
    0
    1
    2
    V
    (V)  
    t
    MGD521  
    F
    2
    In accordance with “IEC 60-1, Section 8”.  
    t1 = 10 µs.  
    Tj = 25 °C.  
    t2 = 1000 µs.  
    Fig.4 Non-repetitivepeakreversecurrent  
    pulse definition.  
    Fig.5 Forward current as a function of forward  
    voltage; typical values.  
    1996 Jun 11  
    7
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    50  
    handbook, halfpage  
    25  
    7
    50  
    2
    3
    MGA200  
    Dimensions in mm.  
    Fig.6 Device mounted on a printed-circuit board.  
    1996 Jun 11  
    8
    Philips Semiconductors  
    Product specification  
    Voltage regulator diodes  
    BZT03 series  
    PACKAGE OUTLINE  
    k
    a
    0.81  
    max  
    3.81  
    max  
    4.57  
    max  
    MBC880  
    28 min  
    28 min  
    Dimensions in mm.  
    The marking band indicates the cathode.  
    Fig.7 SOD57.  
    DEFINITIONS  
    Data sheet status  
    Objective specification  
    Preliminary specification  
    Product specification  
    This data sheet contains target or goal specifications for product development.  
    This data sheet contains preliminary data; supplementary data may be published later.  
    This data sheet contains final product specifications.  
    Limiting values  
    Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
    more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
    of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
    is not implied. Exposure to limiting values for extended periods may affect device reliability.  
    Application information  
    Where application information is given, it is advisory and does not form part of the specification.  
    LIFE SUPPORT APPLICATIONS  
    These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
    products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
    use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
    improper use or sale.  
    1996 Jun 11  
    9
    配单直通车
    BZT03-C110产品参数
    型号:BZT03-C110
    是否Rohs认证：不符合
    生命周期：Obsolete
    IHS 制造商：NXP SEMICONDUCTORS
    包装说明：E-LALF-W2
    针数：2
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8541.10.00.50
    风险等级：5.88
    Is Samacsys：N
    最小击穿电压：104 V
    外壳连接：ISOLATED
    最大钳位电压：152 V
    配置：SINGLE
    二极管元件材料：SILICON
    二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
    最大动态阻抗：250 Ω
    JESD-30 代码：E-LALF-W2
    湿度敏感等级：1
    最大非重复峰值反向功率耗散：300 W
    元件数量：1
    端子数量：2
    最高工作温度：175 °C
    封装主体材料：GLASS
    封装形状：ELLIPTICAL
    封装形式：LONG FORM
    峰值回流温度（摄氏度）：225
    极性：UNIDIRECTIONAL
    最大功率耗散：1.3 W
    认证状态：Not Qualified
    标称参考电压：110 V
    最大反向电流：5 µA
    子类别：Voltage Reference Diodes
    表面贴装：NO
    技术：ZENER
    端子形式：WIRE
    端子位置：AXIAL
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    最大电压容差：5.5%
    工作测试电流：5 mA
    Base Number Matches：1
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