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产品型号BZT52H-B5V1,115的Datasheet PDF文件预览

BZT52H series  
Single Zener diodes in a SOD123F package  
Rev. 3 — 7 December 2010  
Product data sheet  
1. Product profile  
1.1 General description  
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted  
Device (SMD) plastic package.  
1.2 Features and benefits  
„ Total power dissipation: 830 mW  
„ Wide working voltage range: nominal  
„ Low differential resistance  
„ AEC-Q101 qualified  
2.4 V to 75 V (E24 range)  
„ Small plastic package suitable for  
surface-mounted design  
1.3 Applications  
„ General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
IF = 10 mA  
Tamb 25 °C  
Min  
Typ  
Max  
0.9  
Unit  
V
[1]  
[2]  
[3]  
VF  
forward voltage  
total power dissipation  
-
-
-
-
-
-
Ptot  
375  
830  
mW  
mW  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
2
anode  
1
2
2
1
006aaa152  
[1] The marking bar indicates the cathode.  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
plastic surface-mounted package; 2 leads  
Version  
BZT52H-B2V4 to  
BZT52H-C75[1]  
SOD123F  
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking  
code  
Type number  
Marking  
code  
Type number  
Marking  
code  
Type number  
Marking  
code  
BZT52H-B2V4  
BZT52H-B2V7  
BZT52H-B3V0  
BZT52H-B3V3  
BZT52H-B3V6  
BZT52H-B3V9  
BZT52H-B4V3  
BZT52H-B4V7  
BZT52H-B5V1  
BZT52H-B5V6  
BZT52H-B6V2  
BZT52H-B6V8  
BZT52H-B7V5  
BZT52H-B8V2  
BZT52H-B9V1  
BZT52H-B10  
BZT52H-B11  
DC  
DD  
DE  
DF  
DG  
DH  
DJ  
BZT52H-B15  
BZT52H-B16  
BZT52H-B18  
BZT52H-B20  
BZT52H-B22  
BZT52H-B24  
BZT52H-B27  
BZT52H-B30  
BZT52H-B33  
BZT52H-B36  
BZT52H-B39  
BZT52H-B43  
BZT52H-B47  
BZT52H-B51  
BZT52H-B56  
BZT52H-B62  
BZT52H-B68  
BZT52H-B75  
-
DX  
DY  
DZ  
E1  
E2  
E3  
E4  
E5  
E6  
E7  
E8  
E9  
EA  
EB  
EC  
ED  
EE  
EF  
-
BZT52H-C2V4 B3  
BZT52H-C2V7 B4  
BZT52H-C3V0 B5  
BZT52H-C3V3 B6  
BZT52H-C3V6 B7  
BZT52H-C3V9 B8  
BZT52H-C4V3 B9  
BZT52H-C4V7 BA  
BZT52H-C5V1 BB  
BZT52H-C5V6 BC  
BZT52H-C6V2 BD  
BZT52H-C6V8 BE  
BZT52H-C7V5 BF  
BZT52H-C8V2 BG  
BZT52H-C9V1 BH  
BZT52H-C15  
BZT52H-C16  
BZT52H-C18  
BZT52H-C20  
BZT52H-C22  
BZT52H-C24  
BZT52H-C27  
BZT52H-C30  
BZT52H-C33  
BZT52H-C36  
BZT52H-C39  
BZT52H-C43  
BZT52H-C47  
BZT52H-C51  
BZT52H-C56  
BZT52H-C62  
BZT52H-C68  
BZT52H-C75  
-
BN  
BP  
BQ  
BR  
BS  
BT  
BU  
BV  
BW  
BX  
BY  
BZ  
C1  
C2  
C3  
C4  
C5  
C6  
-
DK  
DL  
DM  
DN  
DP  
DQ  
DR  
DS  
DT  
DU  
DV  
DW  
BZT52H-C10  
BZT52H-C11  
BZT52H-C12  
BZT52H-C13  
BJ  
BK  
BL  
BM  
BZT52H-B12  
BZT52H-B13  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
2 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
Unit  
IF  
forward current  
-
-
250  
mA  
IZSM  
non-repetitive peak  
reverse current  
see  
Table 8,9  
and 10  
[1]  
PZSM  
Ptot  
non-repetitive peak  
reverse power dissipation  
-
40  
W
[2]  
[3]  
total power dissipation  
Tamb 25 °C  
-
375  
mW  
mW  
°C  
-
830  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
Tamb  
Tstg  
65  
65  
+150  
+150  
°C  
°C  
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
330  
150  
70  
Unit  
K/W  
K/W  
K/W  
[1]  
[2]  
[3]  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
-
-
-
-
-
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[3] Soldering point of cathode tab.  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
3 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
7. Characteristics  
Table 7.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
IF = 10 mA  
Min  
Typ  
Max  
Unit  
[1]  
VF  
forward voltage  
-
-
0.9  
V
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
Table 8.  
Characteristics per type; BZT52H-B2V4 to BZT52H-C24  
Tj = 25 °C unless otherwise specified.  
BZT52H Sel Working Maximum differential Reverse  
Temperature Diode  
Non-repetitive  
-xxx  
voltage  
VZ (V);  
IZ = 5 mA  
resistance rdif (Ω)  
current IR (μA) coefficient  
SZ (mV/K);  
capacitance peak reverse  
Cd (pF)[1]  
current  
IZSM (A)[2]  
IZ = 5 mA  
Min  
2.35 2.45 400  
2.2 2.6  
2.65 2.75 500  
2.5 2.9  
2.94 3.06 500  
2.8 3.2  
3.23 3.37 500  
3.1 3.5  
3.53 3.67 500  
3.4 3.8  
3.82 3.98 500  
3.7 4.1  
4.21 4.39 500  
4.0 4.6  
4.61 4.79 500  
Max IZ = 1 mA IZ = 5 mA Max  
VR (V) Min  
Max  
Max  
Max  
2V4  
2V7  
3V0  
3V3  
3V6  
3V9  
4V3  
4V7  
5V1  
5V6  
6V2  
6V8  
7V5  
8V2  
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
85  
83  
95  
95  
95  
95  
95  
78  
60  
40  
10  
8
50  
20  
10  
5
1
1
1
1
1
1
1
2
2
2
4
4
5
5
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
2.7  
2.0  
0.4  
0.0  
450  
6.0  
0.0  
0.0  
0.0  
0.0  
0.0  
0.0  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
5
3
3
3
4.4  
5.0  
4.8  
5.0  
5.2  
5.4  
480  
2
5.49 5.71 400  
5.2 6.0  
6.08 6.32 150  
5.8 6.6  
6.66 6.94 80  
6.4 7.2  
7.35 7.65 80  
7.0 7.9  
8.04 8.36 80  
7.7 8.7  
1
3
2
1.2  
10  
10  
1
2.5  
0.7  
3.2  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
4 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
Table 8.  
Characteristics per type; BZT52H-B2V4 to BZT52H-C24 …continued  
Tj = 25 °C unless otherwise specified.  
BZT52H Sel Working  
Maximum differential Reverse  
Temperature Diode  
Non-repetitive  
-xxx  
voltage  
VZ (V);  
IZ = 5 mA  
resistance rdif (Ω)  
current IR (μA) coefficient  
SZ (mV/K);  
capacitance peak reverse  
Cd (pF)[1]  
current  
IZSM (A)[2]  
IZ = 5 mA  
Min  
Max IZ = 1 mA IZ = 5 mA Max  
VR (V) Min  
Max  
Max  
Max  
9V1  
10  
11  
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
8.92 9.28 100  
10  
10  
10  
10  
10  
15  
20  
20  
20  
25  
30  
0.5  
6
3.8  
7.0  
150  
3.0  
8.5  
9.8  
9.4  
9.6  
10.2 70  
10.6  
0.2  
7
4.5  
8.0  
90  
85  
85  
80  
75  
75  
70  
60  
60  
55  
3.0  
2.5  
2.5  
2.5  
2.0  
1.5  
1.5  
1.5  
1.25  
1.25  
10.8 11.2 70  
10.4 11.6  
0.1  
8
5.4  
9.0  
12  
13  
15  
16  
18  
20  
22  
24  
11.8 12.2 90  
11.4 12.7  
0.1  
8
6.0  
10.0  
11.0  
13.0  
14.0  
16.0  
18.0  
20.0  
22.0  
12.7 13.3 110  
12.4 14.1  
0.1  
8
7.0  
14.7 15.3 110  
13.8 15.6  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
10.5  
11.2  
12.6  
14  
9.2  
15.7 16.3 170  
15.3 17.1  
10.4  
12.4  
14.4  
16.4  
18.4  
17.6 18.4 170  
16.8 19.1  
19.6 20.4 220  
18.8 21.2  
21.6 22.4 220  
20.8 23.3  
15.4  
16.8  
23.5 24.5 220  
22.8 25.6  
[1] f = 1 MHz; VR = 0 V.  
[2] tp = 100 μs; Tamb = 25 °C.  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
5 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
Table 9.  
Characteristics per type; BZT52H-B27 to BZT52H-C51  
Tj = 25 °C unless otherwise specified.  
BZT52H Sel Working  
Maximum differential Reverse  
Temperature Diode  
Non-repetitive  
-xxx  
voltage  
VZ (V);  
IZ = 2 mA  
resistance rdif (Ω)  
current IR (μA) coefficient  
SZ (mV/K);  
capacitance peak reverse  
Cd (pF)[1]  
current  
IZSM (A)[2]  
IZ = 5 mA  
Min  
Max IZ = 1 mA IZ = 5 mA Max  
VR (V) Min  
Max  
Max  
Max  
27  
30  
33  
36  
39  
43  
47  
51  
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
26.5 27.5 250  
25.1 28.9  
40  
40  
40  
60  
75  
80  
90  
100  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
18.9  
21.4  
24.4  
27.4  
30.4  
33.4  
37.6  
42.0  
46.6  
25.3  
50  
1.0  
29.4 30.6 250  
28.0 32.0  
21  
29.4  
33.4  
37.4  
41.2  
46.6  
51.8  
57.2  
50  
45  
45  
45  
40  
40  
40  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
32.3 33.7 250  
31.0 35.0  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
35.3 36.7 250  
34.0 38.0  
38.2 39.8 300  
37.0 41.0  
42.1 43.9 325  
40.0 46.0  
46.1 47.9 325  
44.0 50.0  
50.0 52.0 350  
48.0 54.0  
[1] f = 1 MHz; VR = 0 V.  
[2] tp = 100 μs; Tamb = 25 °C.  
Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75  
Tj = 25 °C unless otherwise specified.  
BZT52H Sel Working  
Maximum differential Reverse  
Temperature Diode  
Non-repetitive  
-xxx  
voltage  
VZ (V);  
IZ = 2 mA  
resistance rdif (Ω) current IR (μA) coefficient  
capacitance peak reverse  
SZ (mV/K);  
IZ = 5 mA  
Cd (pF)[1]  
current  
IZSM (A)[2]  
Min  
Max IZ = 0.5 mA IZ = 2 mA Max  
VR (V) Min  
Max  
Max  
Max  
56  
62  
68  
75  
B
C
B
C
B
C
B
C
54.9 57.1 375  
52.0 60.0  
120  
140  
160  
175  
0.05  
0.05  
0.05  
0.05  
39.2  
43.4  
47.6  
52.5  
52.2  
58.8  
65.6  
73.4  
63.8  
71.6  
79.8  
88.6  
40  
0.3  
60.8 63.2 400  
58.0 66.0  
35  
35  
35  
0.3  
66.6 69.4 400  
64.0 72.0  
0.25  
0.20  
73.5 76.5 400  
70.0 79.0  
[1] f = 1 MHz; VR = 0 V.  
[2] tp = 100 μs; Tamb = 25 °C.  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
6 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
mbg801  
mbg781  
3
10  
300  
P
I
F
ZSM  
(W)  
(mA)  
2
200  
10  
(1)  
(2)  
10  
100  
1
10  
0
0.6  
1  
0.8  
1
1
10  
t
p
(ms)  
V
F
(V)  
(1) Tj = 25 °C (prior to surge)  
(2) Tj = 150 °C (prior to surge)  
Tj = 25 °C  
Fig 1. Non-repetitive peak reverse power dissipation  
as a function of pulse duration; maximum  
values  
Fig 2. Forward current as a function of forward  
voltage; typical values  
mbg782  
mbg783  
10  
0
12  
S
S
Z
(mV/K)  
Z
11  
4V3  
(mV/K)  
10  
9V1  
5
1  
3V9  
8V2  
7V5  
3V6  
6V8  
6V2  
5V6  
5V1  
0
2  
3  
3V3  
4V7  
3V0  
2V4  
2V7  
5  
0
4
8
12  
16  
20  
0
20  
40  
60  
I
Z
(mA)  
I
(mA)  
Z
BZT52H-B/C2V4 to BZT52H-B/C4V3  
BZT52H-B/C4V7 to BZT52H-B/C12  
Tj = 25 °C to 150 °C  
Tj = 25 °C to 150 °C  
Fig 3. Temperature coefficient as a function of  
working current; typical values  
Fig 4. Temperature coefficient as a function of  
working current; typical values  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
7 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
8. Test information  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
9. Package outline  
1.7  
1.5  
1.2  
1.0  
1
0.55  
0.35  
3.6 2.7  
3.4 2.5  
2
0.70  
0.55  
0.25  
0.10  
Dimensions in mm  
04-11-29  
Fig 5. Package outline SOD123F  
10. Packing information  
Table 11. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package Description  
Packing quantity  
3000  
-115  
10000  
BZT52H-B2V4 to SOD123F 4 mm pitch, 8 mm tape and reel  
BZT52H-C75  
-135  
[1] For further information and the availability of packing methods, see Section 14.  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
8 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
11. Soldering  
4.4  
4
2.9  
1.6  
solder lands  
solder resist  
2.1 1.6  
1.1 1.2  
solder paste  
occupied area  
1.1  
(2×)  
Reflow soldering is the only recommended soldering method.  
Dimensions in mm.  
Fig 6. Reflow soldering footprint SOD123F  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
9 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
12. Revision history  
Table 12. Revision history  
Document ID  
BZT52H_SER v.3  
Modifications:  
Release date  
20101207  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
BZT52H_SER v.2  
Added selection B.  
Section 1.2 “Features and benefits”: amended.  
Table 2 “Pinning”: graphic symbol updated.  
Section 8 “Test information”: added.  
Section 13 “Legal information”: updated.  
BZT52H_SER v.2  
BZT52H_SER v.1  
20091115  
Product data sheet  
-
-
BZT52H_SER v.1  
-
20051222  
Product data sheet  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
10 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
13.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
11 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BZT52H_SER  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 3 — 7 December 2010  
12 of 13  
BZT52H series  
NXP Semiconductors  
Single Zener diodes in a SOD123F package  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Quality information . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Packing information . . . . . . . . . . . . . . . . . . . . . 8  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 7 December 2010  
Document identifier: BZT52H_SER  
配单直通车
BZT52H-B5V1,115产品参数
型号:BZT52H-B5V1,115
Brand Name:NXP Semiconductor
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SOD-123
包装说明:PLASTIC PACKAGE-2
针数:2
制造商包装代码:SOD123F
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.51
配置:SINGLE
二极管元件材料:SILICON
二极管类型:ZENER DIODE
最大动态阻抗:480 Ω
JESD-30 代码:R-PDSO-F2
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:2
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL
最大功率耗散:0.375 W
认证状态:Not Qualified
标称参考电压:5.1 V
子类别:Voltage Reference Diodes
表面贴装:YES
技术:ZENER
端子面层:Tin (Sn)
端子形式:FLAT
端子位置:DUAL
最大电压容差:1.96%
工作测试电流:5 mA
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