BZT55C11各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

BZT55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

96 12009

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

j

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

300K/W

Type

Symbol

Value

500

Unit

mW

mA

C

P

V

R

thJA

I

Z

P /V

V

Z

T

175

–65...+175

j

T

stg

C

Maximum Thermal Resistance

T = 25 C

j

Parameter

Test Conditions

Symbol

R

thJA

Value

500

Unit

K/W

Junction ambient on PC board 50mmx50mmx1.6mm

Electrical Characteristics

T = 25 C

j

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

V

F

V

F

Document Number 85601

Rev. 3, 01-Apr-99

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1 (6)

BZT55C...

Vishay Telefunken

Type

BZT55C...

2 V 4

2 V 7

3 V 0

3 V 3

3 V 6

3 V 9

4 V 3

4 V 7

5 V 1

5 V 6

6 V 2

6 V 8

7 V 5

8 V 2

9 V 1

10

V

I

for

V

and r

r

at I

I

and I at

V

1

2

3

5

6.2

6.8

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

TK

VZ

%/K

Znom

ZT

1)

zjT

zjk

ZK

R

2)

V

mA

5

mA

1

A

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

2.28 to 2.56 < 85

< 600

< 550

< 450

< 200

< 150

< 50

< 10

< 4

< 2

< 100

< 50

< 40

< 20

< 10

< 2

< 5

< 10

–0.09 to –0.06

–0.08 to –0.05

–0.06 to –0.03

–0.05 to +0.02

–0.02 to +0.02

–0.05 to +0,05

0.03 to 0.06

0.03 to 0.07

0.03 to 0.08

0.03 to 0.09

0.03 to 0.1

0.03 to 0.11

0.04 to 0.12

5

2.5 to 2.9

2.8 to 3.2

3.1 to 3.5

3.4 to 3.8

3.7 to 4.1

4.0 to 4.6

4.4 to 5.0

4.8 to 5.4

5.2 to 6.0

5.8 to 6.6

6.4 to 7.2

7.0 to 7.9

7.7 to 8.7

8.5 to 9.6

9.4 to 10.6

10.4 to 11.6 < 20

11.4 to 12.7 < 20

12.4 to 14.1 < 26

13.8 to 15.6 < 30

15.3 to 17.1 < 40

16.8 to 19.1 < 50

18.8 to 21.2 < 55

20.8 to 23.3 < 55

22.8 to 25.6 < 80

25.1 to 28.9 < 80

< 85

< 90

< 80

< 60

< 40

< 10

< 8

< 2

< 1

< 0.5

< 0.1

< 7

< 10

< 15

< 50

< 70

11

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

12

13

15

16

18

20

22

24

27

30

33

36

39

43

47

51

56

62

68

75

< 90

< 110

< 170

< 220

< 500

< 600

28 to 32

31 to 35

34 to 38

37 to 41

40 to 46

44 to 50

48 to 54

52 to 60

58 to 66

64 to 72

70 to 79

< 80

< 90

1

2.5

0.5

< 110 < 700

< 125 < 700

< 135 < 1000 0.5

< 150 < 1000 0.5

< 200 < 1000 0.5

< 250 < 1500 0.5

51

56

62

68

75

1)

t /T

p

100ms,

tighter tolerances available on request:

BZT55A... ± 1% of V

BZT55B... ± 2% of V

Znom

BZT55F... ± 3% of V

2)

at T = 150 C

j

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2 (6)

Document Number 85601

Rev. 3, 01-Apr-99

BZT55C...

Vishay Telefunken

Characteristics (T_j= 25 C unless otherwise specified)

600

500

400

300

200

100

0

1.3

1.2

1.1

V

=V /V (25°C)

Zt Z

Ztn

–4

TK =10 10 /K

VZ

–4

8

6

10 /K

–4

10 /K

–4

4

2

10 /K

–4

10 /K

0

1.0

0.9

0.8

–4

–2 10 /K

–4

–4 10 /K

200

240

0

40

80

120

160

–60

0

60

120

180

95 9602

T

amb

– Ambient Temperature ( °C )

95 9599

T – Junction Temperature ( °C )

j

Figure 1. Total Power Dissipation vs.

Ambient Temperature

Figure 3. Typical Change of Working Voltage vs.

Junction Temperature

1000

100

10

15

10

5

T =25°C

j

I =5mA

Z

I =5mA

Z

0

1

–5

25

50

0

5

10

15

20

0

10

20

30

40

95 9598

V

– Z-Voltage ( V )

95 9600

V – Z-Voltage ( V )

Z

Figure 2. Typical Change of Working Voltage under Oper-

ating Conditions at T =25 C

Figure 4. Temperature Coefficient of Vz vs.

Z–Voltage

amb

200

150

V =2V

R

T =25°C

j

100

50

0

25

0

5

10

V – Z-Voltage ( V )

Z

15

20

95 9601

Figure 5. Diode Capacitance vs. Z–Voltage

Document Number 85601

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

3 (6)

BZT55C...

Vishay Telefunken

100

10

50

40

30

P

T

=500mW

tot

=25°C

amb

T =25°C

j

1

0.1

0.01

20

10

0

0.001

1.0

35

0

0.2

0.4

0.6

0.8

15

20

25

V – Z-Voltage ( V )

Z

30

95 9605

V

– Forward Voltage ( V )

95 9607

F

Figure 6. Forward Current vs. Forward Voltage

Figure 8. Z–Current vs. Z–Voltage

100

1000

100

10

80

I =1mA

Z

P

T

=500mW

tot

=25°C

amb

60

5mA

40

20

0

10mA

T =25°C

j

1

20

25

0

4

8

12

16

0

5

10

15

20

95 9604

V

– Z-Voltage ( V )

95 9606

V – Z-Voltage ( V )

Z

Figure 7. Z–Current vs. Z–Voltage

Figure 9. Differential Z–Resistance vs. Z–Voltage

1000

100

10

t /T=0.5

p

t /T=0.2

p

Single Pulse

R

T=T

=300K/W

–T

jmax amb

thJA

t /T=0.01

p

t /T=0.1

p

t /T=0.02

p

2

1/2

t /T=0.05

p

i

=(–V +(V +4r

T/Z

)

)/(2r )

ZM

Z

zj

thp

zj

1

10

–1

0

1

2

10

t – Pulse Length ( ms )

10

95 9603

p

Figure 10. Thermal Response

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4 (6)

Document Number 85601

Rev. 3, 01-Apr-99

BZT55C...

Vishay Telefunken

Dimensions in mm

96 12071

Document Number 85601

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

5 (6)

BZT55C...

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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6 (6)

Document Number 85601

Rev. 3, 01-Apr-99

型号:	BZT55C11
是否Rohs认证：	不符合
生命周期：	Transferred
Reach Compliance Code：	unknown
风险等级：	5.63
配置：	SINGLE
二极管类型：	ZENER DIODE
最大动态阻抗：	20 Ω
JESD-609代码：	e0
元件数量：	1
最高工作温度：	175 °C
最大功率耗散：	0.5 W
标称参考电压：	11 V
子类别：	Voltage Reference Diodes
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
最大电压容差：	5.4%
工作测试电流：	5 mA
Base Number Matches：	1

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