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产品型号BZD23C3V6的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
ok, halfpage  
BZD23 series  
Voltage regulator diodes  
1996 Jun 10  
Product specification  
Supersedes data of October 1991  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
and fatigue free as coefficients of  
expansion of all used parts are  
matched.  
FEATURES  
DESCRIPTION  
Glass passivated  
Cavity free cylindrical glass package  
through Implotec (1) technology.  
This package is hermetically sealed  
High maximum operating  
temperature  
(1) Implotec is a trademark of Philips.  
Low leakage current  
Excellent stability  
Zener working voltage range:  
k
a
handbook, 4 columns  
3.6 to 270 V for 46 types  
MAM248  
Transient suppressor stand-off  
voltage range:  
6.2 to 430 V for 45 types  
Fig.1 Simplified outline (SOD81) and symbol.  
Available in ammo-pack.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Ptot  
total power dissipation  
BZD23-C3V6 to -C6V8  
BZD23-C7V5 to -C510  
total power dissipation  
BZD23-C3V6 to -C6V8  
BZD23-C7V5 to -C510  
Ttp = 25 °C; lead length 10 mm;  
see Figs 2 and 3  
2.0  
2.5  
W
W
Ptot  
Tamb = 55 °C; see Figs 2 and 3;  
PCB mounted (see Fig.7)  
1.0  
1.0  
W
W
PZSM  
non-repetitive peak reverse  
power dissipation  
tp = 100 µs; square pulse;  
Tj = 25 °C prior to surge; see Figs 4 and 5  
BZD23-C3V6 to -C6V8  
BZD23-C7V5 to -C510  
300  
300  
W
W
PRSM  
non-repetitive peak reverse  
power dissipation  
10/1000 µs exponential pulse (see Fig.8);  
Tj = 25 °C prior to surge  
BZD23-C7V5 to -C510  
storage temperature  
150  
W
Tstg  
BZD23-C3V6 to -C6V8  
BZD23-C7V5 to -C510  
junction temperature  
BZD23-C3V6 to -C6V8  
BZD23-C7V5 to -C510  
65  
65  
+200 °C  
+175 °C  
Tj  
65  
65  
+200 °C  
+175 °C  
1996 Jun 10  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
VF  
forward voltage  
IF = 0.2 A; see Fig.6  
1.2  
V
Per type when used as voltage regulator diodes  
Tj = 25 °C unless otherwise specified.  
DIFFERENTIAL TEMPERATURE  
TEST  
REVERSE CURRENT  
WORKING VOLTAGE  
VZ (V) at IZ  
TYPE  
No.  
RESISTANCE  
COEFFICIENT CURRENT at REVERSE VOLTAGE  
SUFFIX  
rdif () at IZ  
SZ (%/K) at IZ  
IR (µA)  
(1)  
IZ (mA)  
VR (V)  
MIN.  
NOM.  
MAX.  
TYP.  
MAX.  
MIN.  
MAX.  
MAX.  
C3V6  
C3V9  
C4V3  
C4V7  
C5V1  
C5V6  
C6V2  
C6V8  
C7V5  
C8V2  
C9V1  
C10  
3.4  
3.7  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
3.8  
4.1  
4
4
8
8
0.14  
0.14  
0.12  
0.10  
0.08  
0.04  
0.01  
0.00  
0.00  
0.03  
0.03  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.04  
0.04  
0.02  
0.00  
0.02  
0.04  
0.06  
0.07  
0.07  
0.08  
0.08  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
50  
100  
50  
25  
10  
5
1
1
4.0  
4.6  
4
7
1
4.4  
5.0  
3
7
1
4.8  
5.4  
3
6
1
5.2  
6.0  
2
4
10  
5
2
5.8  
6.6  
2
3
2
6.4  
7.2  
1
3
10  
50  
10  
10  
7
3
7.0  
7.9  
1
2
3
7.7  
8.7  
1
2
3
8.5  
9.6  
2
4
5
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
2
4
50  
7.5  
8.2  
9.1  
10  
11  
12  
13  
15  
16  
18  
20  
22  
24  
27  
30  
33  
36  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
11  
4
7
50  
4
C11  
12  
4
7
50  
3
C12  
13  
5
10  
10  
15  
15  
15  
15  
15  
15  
15  
15  
40  
40  
45  
45  
50  
2
C13  
15  
5
50  
1
C15  
16  
6
25  
1
C16  
18  
6
25  
1
C18  
20  
6
25  
1
C20  
22  
6
25  
1
C22  
24  
7
25  
1
C24  
27  
7
25  
1
C27  
30  
8
25  
1
C30  
31  
33  
35  
8
25  
1
C33  
34  
36  
38  
21  
21  
24  
24  
10  
1
C36  
37  
39  
41  
10  
1
C39  
40  
43  
46  
10  
1
C43  
44  
47  
50  
10  
1
C47  
1996 Jun 10  
3
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
DIFFERENTIAL TEMPERATURE  
TEST  
REVERSE CURRENT  
WORKING VOLTAGE  
VZ (V) at IZ  
TYPE  
No.  
RESISTANCE  
COEFFICIENT CURRENT at REVERSE VOLTAGE  
SUFFIX  
rdif () at IZ  
SZ (%/K) at IZ  
IR (µA)  
(1)  
IZ (mA)  
VR (V)  
MIN.  
48  
52  
58  
64  
70  
77  
85  
94  
NOM.  
51  
MAX.  
54  
TYP.  
25  
MAX.  
60  
MIN.  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
MAX.  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX.  
10  
10  
10  
10  
10  
10  
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
39  
43  
C51  
56  
60  
25  
60  
C56  
62  
66  
25  
80  
47  
C62  
68  
72  
25  
80  
51  
C68  
75  
79  
30  
100  
100  
200  
200  
250  
250  
300  
300  
350  
400  
500  
750  
850  
1000  
56  
C75  
82  
87  
30  
62  
C82  
91  
96  
60  
68  
C91  
100  
110  
120  
130  
150  
160  
180  
200  
220  
240  
270  
106  
116  
127  
141  
156  
171  
191  
212  
233  
256  
289  
60  
5
75  
C100  
C110  
C120  
C130  
C150  
C160  
C180  
C200  
C220  
C240  
C270  
104  
80  
5
82  
114  
124  
138  
153  
168  
188  
208  
228  
251  
80  
5
91  
110  
130  
150  
180  
200  
350  
400  
450  
5
100  
110  
120  
130  
150  
160  
180  
200  
5
5
5
5
2
2
2
Note  
1. To complete the type number the suffix is added to the basic type number, e.g. BZD23-C51.  
1996 Jun 10  
4
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
Per type when used as transient suppressor diodes  
Tj = 25 °C unless otherwise specified.  
REVERSE  
TEMPERATURE  
BREAKDOWN  
COEFFICIENT  
VOLTAGE  
REVERSE CURRENT  
at STAND-OFF  
VOLTAGE  
TEST  
CURRENT  
CLAMPING  
VOLTAGE  
TYPE  
NUMBER  
V
(BR)R (V)  
at Itest  
at IRSM  
(A)  
note 1  
SZ (%/K) at Itest  
V(CL)R (V)  
MAX.  
IR (µA)  
Itest  
(mA)  
at VR  
(V)  
MIN.  
MIN.  
MAX.  
MAX.  
BZD23-C7V5  
BZD23-C8V2  
BZD23-C9V1  
BZD23-C10  
BZD23-C11  
BZD23-C12  
BZD23-C13  
BZD23-C15  
BZD23-C16  
BZD23-C18  
BZD23-C20  
BZD23-C22  
BZD23-C24  
BZD23-C27  
BZD23-C30  
BZD23-C33  
BZD23-C36  
BZD23-C39  
BZD23-C43  
BZD23-C47  
BZD23-C51  
BZD23-C56  
BZD23-C62  
BZD23-C68  
BZD23-C75  
BZD23-C82  
BZD23-C91  
BZD23-C100  
BZD23-C110  
BZD23-C120  
BZD23-C130  
BZD23-C150  
BZD23-C160  
7.0  
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
0.00  
0.03  
0.03  
0.05  
0.05  
0.05  
0.05  
0.05  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.06  
0.07  
0.07  
0.07  
0.07  
0.08  
0.08  
0.08  
0.08  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.07  
0.08  
0.08  
0.09  
0.10  
0.10  
0.10  
0.10  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.11  
0.12  
0.12  
0.12  
0.12  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
100  
100  
50  
50  
50  
50  
50  
50  
25  
25  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
5
11.3  
12.3  
13.3  
14.8  
15.7  
17.0  
18.9  
20.9  
22.9  
25.6  
28.4  
31.0  
33.8  
38.1  
42.2  
46.2  
50.1  
54.1  
60.7  
65.5  
70.8  
78.6  
86.5  
94.4  
103.5  
114  
13.3  
12.2  
11.3  
10.1  
9.6  
8.8  
7.9  
7.2  
6.6  
5.9  
5.3  
4.8  
4.4  
3.9  
3.6  
3.2  
3.0  
2.8  
2.5  
2.3  
2.1  
1.9  
1.7  
1.6  
1.5  
1.3  
1.2  
1.1  
1.0  
0.90  
0.81  
0.73  
0.67  
1500  
1200  
100  
20  
5
6.2  
6.8  
7.5  
8.2  
9.1  
10  
5
5
11  
5
12  
5
13  
5
15  
5
16  
5
18  
5
20  
5
22  
5
24  
31  
5
27  
34  
5
30  
37  
5
33  
40  
5
36  
44  
5
39  
48  
5
43  
52  
5
47  
58  
5
51  
64  
5
56  
70  
5
62  
77  
5
68  
85  
126  
5
75  
94  
5
139  
5
82  
104  
114  
124  
138  
153  
5
152  
5
91  
5
167  
5
100  
110  
120  
130  
5
185  
5
5
204  
5
5
224  
5
1996 Jun 10  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
REVERSE  
BREAKDOWN  
VOLTAGE  
REVERSE CURRENT  
at STAND-OFF  
VOLTAGE  
TEMPERATURE  
COEFFICIENT  
TEST  
CURRENT  
CLAMPING  
VOLTAGE  
TYPE  
NUMBER  
V
(BR)R (V)  
at Itest  
at IRSM  
(A)  
note 1  
SZ (%/K) at Itest  
V(CL)R (V)  
IR (µA)  
Itest  
(mA)  
at VR  
(V)  
MIN.  
168  
188  
208  
228  
251  
280  
310  
340  
370  
400  
440  
480  
MIN.  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
0.09  
MAX.  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX.  
249  
276  
305  
336  
380  
419  
459  
498  
537  
603  
655  
707  
MAX.  
5
5
2
2
2
2
2
2
2
2
2
2
0.60  
0.54  
0.50  
0.45  
0.40  
0.36  
0.33  
0.30  
0.28  
0.25  
0.23  
0.21  
5
5
5
5
5
5
5
5
5
5
5
5
150  
160  
180  
200  
220  
240  
270  
300  
330  
360  
390  
430  
BZD23-C180  
BZD23-C200  
BZD23-C220  
BZD23-C240  
BZD23-C270  
BZD23-C300  
BZD23-C330  
BZD23-C360  
BZD23-C390  
BZD23-C430  
BZD23-C470  
BZD23-C510  
Note  
1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-tp  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
thermal resistance from junction to tie-point  
BZD23-C3V6 to -C6V8  
lead length = 10 mm  
87  
60  
K/W  
K/W  
BZD23-C7V5 to -C510  
Rth j-a  
thermal resistance from junction to ambient  
BZD23-C3V6 to -C6V8  
note 1  
145  
120  
K/W  
K/W  
BZD23-C7V5 to -C510  
Note  
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.7.  
For more information please refer to the “General Part of associated Handbook”.  
1996 Jun 10  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
GRAPHICAL DATA  
MGD522  
MGD523  
3
3
handbook, halfpage  
handbook, halfpage  
P
P
tot  
tot  
(W)  
(W)  
2
2
1
0
1
0
0
0
100  
200  
100  
200  
T (°C)  
T (°C)  
Types BZD23-C3V6 to -C6V8  
Types BZD23-C7V5 to -C510  
Solid line: tie-point temperature; lead length = 10 mm.  
Solid line: tie-point temperature; lead length = 10 mm.  
Dotted line: ambient temperature; PCB mounted as shown in Fig.7.  
Dotted line: ambient temperature; PCB mounted as shown in Fig.7.  
Fig.2 Maximum total power dissipation as a  
function of temperature.  
Fig.3 Maximum total power dissipation as a  
function of temperature.  
MGD524  
MGD525  
4
10  
400  
handbook, halfpage  
handbook, halfpage  
P
ZSM  
P
ZSM  
(W)  
(W)  
300  
3
10  
200  
100  
0
2
10  
10  
10  
2  
1  
10  
1
10  
0
3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8  
(V)  
t
(ms)  
p
V
Znom  
Tj = 25 °C prior to surge.  
See also Fig.5.  
Tj = 25 °C prior to surge.  
Fig.4 Maximum non-repetitive peak reverse  
power dissipation as a function of pulse  
duration (square pulse).  
Fig.5 Maximum non-repetitive peak reverse  
power dissipation as a function of nominal  
working voltage.  
1996 Jun 10  
7
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
MGD520  
2
50  
25  
handbook, halfpage  
handbook, halfpage  
I
F
(A)  
7
50  
1
2
3
0
0
1
2
MGA200  
V
(V)  
F
Tj = 25 °C.  
Dimensions in mm.  
Fig.6 Forward current as a function of forward  
voltage; typical values.  
Fig.7 Device mounted on a printed-circuit board.  
I
handbook, halfpage  
RSM  
(%)  
100  
90  
50  
10  
t
t
1
t
MGD521  
2
In accordance with “IEC 60-1, Section 8”.  
t1 = 10 µs.  
t2 = 1000 µs.  
Fig.8 Non-repetitive peak reverse current pulse  
definition.  
1996 Jun 10  
8
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD23 series  
PACKAGE OUTLINE  
5 max  
h
0.81  
max  
2.15  
max  
MBC051  
28 min  
3.8 max  
28 min  
Dimensions in mm.  
The marking band indicates the cathode.  
Fig.9 SOD81.  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Jun 10  
9
配单直通车
BZD23C3V6产品参数
型号:BZD23C3V6
生命周期:Obsolete
Reach Compliance Code:unknown
风险等级:5.84
外壳连接:ISOLATED
配置:SINGLE
二极管元件材料:SILICON
二极管类型:ZENER DIODE
JESD-30 代码:O-LALF-W2
元件数量:1
端子数量:2
封装主体材料:GLASS
封装形状:ROUND
封装形式:LONG FORM
极性:UNIDIRECTIONAL
最大功率耗散:1 W
认证状态:Not Qualified
标称参考电压:3.6 V
表面贴装:NO
技术:ZENER
端子形式:WIRE
端子位置:AXIAL
最大电压容差:5%
工作测试电流:100 mA
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