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DISCRETE SEMICONDUCTORS

DATA SHEET

k, halfpage

M3D121

BZD27 series

Voltage regulator diodes

1996 Jun 10

Product speciﬁcation

Supersedes data of October 1991

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

FEATURES

DESCRIPTION

• Glass passivated

Cavity free cylindrical glass SOD87

package through Implotec

technology. This package is

(1)

• High maximum operating

temperature

(1) Implotec is a trademark of Philips.

• Low leakage current

• Excellent stability

k

a

handbook, 4 columns

• Zener working voltage range:

3.6 to 270 V for 46 types

MAM249

• Transient suppressor stand-off

voltage range: 6.2 to 430 V

for 45 types

Fig.1 Simplified outline (SOD87) and symbol.

• Supplied in 8 mm embossed tape.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

P_tot

total power dissipation

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

total power dissipation

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

T_tp= 105 °C; see Figs 2 and 3

−

1.7

2.3

W

P_tot

PCB mounted (see Fig.7)

T

_amb= 60 °C; see Fig.2

_amb= 55 °C; see Fig.3

−

0.8

W

T

P_ZSM

non-repetitive peak reverse t_p= 100 µs; square pulse;

power dissipation

T_j= 25 °C prior to surge; see Figs.4 and 5

BZD27-C3V6 to -C6V8

−

300

W

BZD27-C7V5 to -C510

P_RSM

non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.8);

power dissipation

T_j= 25 °C prior to surge

BZD27-C7V5 to -C510

storage temperature

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

junction temperature

BZD27-C3V6 to -C6V8

BZD27-C7V5 to -C510

−

150

W

T_stg

−65

+200

+175

°C

T_j

−65

+200

+175

°C

1996 Jun 10

2

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

ELECTRICAL CHARACTERISTICS

Total series

T_j= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

I_F= 0.2 A; see Fig.6

MIN.

MAX.

UNIT

V_F

−

1.2

V

Per type when used as voltage regulator diodes

T_j= 25 °C unless otherwise specified.

DIFFERENTIAL TEMPERATURE

TEST

REVERSE CURRENT

WORKING VOLTAGE

V_Z(V) at I_Z

TYPE

No.

RESISTANCE

COEFFICIENT CURRENT at REVERSE VOLTAGE

SUFFIX

r_dif(Ω) at I_Z

S_Z(%/K) at I_Z

I_R(µA)

(1)

I_Z(mA)

V_R(V)

MIN.

NOM.

MAX.

TYP.

MAX.

MIN.

MAX.

C3V6

C3V9

C4V3

C4V7

C5V1

C5V6

C6V2

C6V8

C7V5

C8V2

C9V1

C10

3.4

3.7

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

3.8

4.1

4

8

−0.14

−0.12

−0.10

−0.08

−0.04

−0.01

0.00

0.03

0.05

0.06

0.07

−0.04

−0.02

0.00

−0.02

0.04

0.06

0.07

0.08

0.09

0.10

0.11

0.12

100

50

100

50

25

10

5

1

4.0

4.6

4

7

1

4.4

5.0

3

7

1

4.8

5.4

3

6

1

5.2

6.0

2

4

10

5

2

5.8

6.6

2

3

2

6.4

7.2

1

3

10

50

10

7

3

7.0

7.9

1

2

3

7.7

8.7

1

2

3

8.5

9.6

2

4

5

9.4

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

32

2

4

50

7.5

8.2

9.1

10

11

12

13

15

16

18

20

22

24

27

30

33

36

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28

11

4

7

50

4

C11

12

4

7

50

3

C12

13

5

10

15

40

45

50

2

C13

15

5

50

1

C15

16

6

25

1

C16

18

6

25

1

C18

20

6

25

1

C20

22

6

25

1

C22

24

7

25

1

C24

27

7

25

1

C27

30

8

25

1

C30

31

33

35

8

25

1

C33

34

36

38

21

24

10

1

C36

37

39

41

10

1

C39

40

43

46

10

1

C43

44

47

50

10

1

C47

1996 Jun 10

3

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

DIFFERENTIAL TEMPERATURE

TEST

REVERSE CURRENT

WORKING VOLTAGE

V_Z(V) at I_Z

TYPE

No.

RESISTANCE

COEFFICIENT CURRENT at REVERSE VOLTAGE

SUFFIX

r_dif(Ω) at I_Z

S_Z(%/K) at I_Z

I_R(µA)

(1)

I_Z(mA)

V_R(V)

MIN.

48

52

58

64

70

77

85

94

NOM.

51

MAX.

54

TYP.

25

MAX.

60

MIN.

0.07

0.08

0.09

MAX.

0.12

0.13

MAX.

10

5

1

39

43

C51

56

60

25

60

C56

62

66

25

80

47

C62

68

72

25

80

51

C68

75

79

30

100

200

250

300

350

400

500

750

850

1000

56

C75

82

87

30

62

C82

91

96

60

68

C91

100

110

120

130

150

160

180

200

220

240

270

106

116

127

141

156

171

191

212

233

256

289

60

5

75

C100

C110

C120

C130

C150

C160

C180

C200

C220

C240

C270

104

80

5

82

114

124

138

153

168

188

208

228

251

80

5

91

110

130

150

180

200

350

400

450

5

100

110

120

130

150

160

180

200

5

2

Note

1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.

1996 Jun 10

4

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

Per type when used as transient suppressor diodes

T_j= 25 °C unless otherwise specified.

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

REVERSE

TEMPERATURE

BREAKDOWN

COEFFICIENT

VOLTAGE

TEST

CURREN

T

CLAMPING

VOLTAGE

TYPE

NUMBER

V

_(BR)R(V)

at I_test

at I_RSM

(A)

note 1

S_Z(%/K) at I_test

V_(CL)R(V)

MAX.

I_R(µA)

I_test

(mA)

at V_R

(V)

MIN.

MAX.

BZD27-C7V5

BZD27-C8V2

BZD27-C9V1

BZD27-C10

BZD27-C11

BZD27-C12

BZD27-C13

BZD27-C15

BZD27-C16

BZD27-C18

BZD27-C20

BZD27-C22

BZD27-C24

BZD27-C27

BZD27-C30

BZD27-C33

BZD27-C36

BZD27-C39

BZD27-C43

BZD27-C47

BZD27-C51

BZD27-C56

BZD27-C62

BZD27-C68

BZD27-C75

BZD27-C82

BZD27-C91

BZD27-C100

BZD27-C110

BZD27-C120

BZD27-C130

BZD27-C150

BZD27-C160

7.0

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

28

0.00

0.03

0.05

0.06

0.07

0.08

0.09

0.07

0.08

0.09

0.10

0.11

0.12

0.13

100

50

25

10

5

11.3

12.3

13.3

14.8

15.7

17.0

18.9

20.9

22.9

25.6

28.4

31.0

33.8

38.1

42.2

46.2

50.1

54.1

60.7

65.5

70.8

78.6

86.5

94.4

103.5

114

13.3

12.2

11.3

10.1

9.6

8.8

7.9

7.2

6.6

5.9

5.3

4.8

4.4

3.9

3.6

3.2

3.0

2.8

2.5

2.3

2.1

1.9

1.7

1.6

1.5

1.3

1.2

1.1

1.0

0.90

0.81

0.73

0.67

1500

1200

100

20

5

6.2

6.8

7.5

8.2

9.1

10

5

11

5

12

5

13

5

15

5

16

5

18

5

20

5

22

5

24

31

5

27

34

5

30

37

5

33

40

5

36

44

5

39

48

5

43

52

5

47

58

5

51

64

5

56

70

5

62

77

5

68

85

126

5

75

94

5

139

5

82

104

114

124

138

153

5

152

5

91

5

167

5

100

110

120

130

5

185

5

204

5

224

5

1996 Jun 10

5

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

REVERSE

BREAKDOWN

VOLTAGE

TEST

CURREN

T

TEMPERATURE

COEFFICIENT

CLAMPING

VOLTAGE

TYPE

NUMBER

V_(BR)R(V)

at I_test

at I_RSM

(A)

note 1

S_Z(%/K) at I_test

V_(CL)R(V)

MAX.

I_R(µA)

I_test

(mA)

at V_R

(V)

MIN.

MAX.

168

188

208

228

251

280

310

340

370

400

440

480

0.09

0.13

5

2

249

276

305

336

380

419

459

498

537

603

655

707

0.60

0.54

0.50

0.45

0.40

0.36

0.33

0.30

0.28

0.25

0.23

0.21

5

150

160

180

200

220

240

270

300

330

360

390

430

BZD27-C180

BZD27-C200

BZD27-C220

BZD27-C240

BZD27-C270

BZD27-C300

BZD27-C330

BZD27-C360

BZD27-C390

BZD27-C430

BZD27-C470

BZD27-C510

Note

1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8.

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-tp}

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to tie-point

BZD27-C3V6 to -C6V8

55

30

K/W

BZD27-C7V5 to -C510

R_{th j-a}

thermal resistance from junction to ambient

BZD27-C3V6 to -C6V8

note 1

175

150

K/W

BZD27-C7V5 to -C510

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7.

For more information please refer to the “General Part of associated Handbook”.

1996 Jun 10

6

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZD27 series

GRAPHICAL DATA

MBH454

MBH455

3

handbook, halfpage

P

tot

(W)

2

1

0

1

0

100

200

100

200

T (°C)

Types BZD27-C3V6 to -C6V8

Types BZD27-C7V5 to -C510

Solid line: tie-point temperature.

Dotted line: ambient temperature;

device mounted as shown in Fig.7.

Dotted line: ambient temperature;

device mounted as shown in Fig.7.

Fig.2 Maximum total power dissipation as a

function of temperature.

Fig.3 Maximum total power dissipation as a

function of temperature.

MGD524

MGD525

4

10

400

handbook, halfpage

P

ZSM

(W)

P

ZSM

(W)

300

3

2

10

200

100

0

10

−2

−1

10

1

10

0

3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8

(V)

t

(ms)

p

V

Znom

T_j= 25 °C prior to surge.

型号:	BZD27C6V2P
Case Style：	SOD-123FL
Pd（W）：	0.8
VZ(Min)：	5.8
VZ(Nom)：	6.2
VZ(Max)：	6.6
IZT(mA)：	100
IR(uA)：	5
VR(V)：	2
class：	Diodes

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