Description
Large-Area InGaAs
Photodiodes
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
EVERYTHING
IN A
C30619, C30641, C30642, C30665
NEW
LIGHT.
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within 2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Features
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
•0.5, 1.0, 2.0, and 3.0 m m diam eters
•High responsivity from 850 nm to 1550 nm
•High shunt resistance, low dark current
•TE-cooled package options
•Low capacitance for fast response tim es
Applications
•Power m eters
•Fiber identifiers
•Laser burn-in racks
•Near infrared instrum entation
•F.T.I.R. spectroscopy
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.