2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6674, 2N6675
types are NPN Silicon Triple Diffused Mesa Power
Transistors designed for high voltage switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (T
C
=25°C) SYMBOL 2N6674 2N6675 UNITS
Collector-Emitter Voltage V
CEV
450 650 V
Collector-Emitter Voltage V
CEO
300 400 V
Emitter-Base Voltage V
EBO
7.0 V
Continuous Collector Current I
C
15 A
Peak Collector Current I
CM
20 A
Continuous Base Current I
B
5.0 A
Power Dissipation P
D
175 W
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +200 °C
Thermal Resistance Θ
JC
1.0 °C/W
ELECTRICAL CHARACTERISTICS: (T
C
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CEV
V
CE
=Rated V
CEV
, V
BE
=1.5V 0.1 mA
I
CEV
V
CE
=Rated V
CEV
, V
BE
=1.5V, T
C
=100°C 1.0 mA
I
EBO
V
EB
=7.0V 2.0 mA
BV
CEO
I
C
=200mA (2N6674) 300 V
BV
CEO
I
C
=200mA (2N6675) 400 V
V
CE(SAT)
I
C
=10A, I
B
=2.0A 1.0 V
V
CE(SAT)
I
C
=10A, I
B
=2.0A, T
C
=100°C 2.0 V
V
CE(SAT)
I
C
=15A, I
B
=5.0A 5.0 V
V
BE(SAT)
I
C
=10A, I
B
=2.0A 1.5 V
h
FE
V
CE
=2.0V, I
C
=10A 8.0 20
I
S/b
V
CE
=30V, I
C
=5.9A 1.0 s
I
S/b
V
CE
=100V, I
C
=250mA 1.0 s
h
fe
V
CE
=10V, I
C
=1.0A, f=5.0MHz 3.0 10
f
t
V
CE
=10V, I
C
=1.0A, f=5.0MHz 15 50 MHz
C
ob
V
CB
=10V, I
E
=0, f=100kHz 150 500 pF
TO-3 CASE
R1 (10-March 2011)
www.centralsemi.com