| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MID117 | TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andamplifiers. | DCCOM Dc Components | DCCOM | |
i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts 1.1Features Thei.MXRT1170processorsarebasedonArmCortex®-M7Core™Platform,whichhasthefollowing features: •TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts 1.1Features Thei.MXRT1170processorsarebasedonArmCortex®-M7Core™Platform,whichhasthefollowing features: •TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L. | KECKEC CORPORATION KEC株式会社 | KEC | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
D-PAKforSurfaceMountApplications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ComplementaryDarlingtonPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
ComplementarypowerDarlingtontransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
ComplementaryDarlingtonPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TRANSISTOR(PNP) | FS First Silicon Co., Ltd | FS | ||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCcurrentgain •Built-inadamperdiodeatE-C •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“－I”suffix) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designe | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ComplementaryDarlingtonPowerTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP117. Applications Mediumpowerswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications | CDIL Continental Device India Limited | CDIL | ||
iscSiliconPNPDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
MID117
- 制造商：
DCCOM
- 制造商全称：
Dc Components
- 功能描述：
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OptiFuse |
23+ |
6000 |
诚信服务，绝对原装原盘 |
询价 | |||
UNI |
13+ |
19728 |
原装分销 |
询价 | |||
UNI原装 |
1801+ |
DIP-2 |
8965 |
只做原装现货、主营光电元器件/门市现货 |
询价 | ||
UNI |
24+ |
DIP-2 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
UNI |
2315+ |
4860 |
优势代理渠道,原装现货,可全系列订货 |
询价 | |||
UNI |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
IXYS |
22+ |
Y4M5 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
23+ |
Y4M5 |
9000 |
原装正品，支持实单 |
询价 | ||
IXYS |
2022 |
Y4-M5 |
58 |
原厂原装正品,价格超越代理 |
询价 | ||
IXYS |
23+ |
MODIGBTRBSOA1200V160AY4- |
1690 |
专业代理销售半导体模块,能提供更多数量 |
询价 |
相关规格书
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