| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BD237 | Plastic Medium Power Silicon NPN Transistor PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc | Motorola Motorola, Inc | Motorola | |
BD237 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD237 | Medium Power Linear and Switching Applications MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
BD237 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | |
BD237 | NPN Epitaxial Planar Transistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | |
BD237 | Silicon NPN Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | |
BD237 | Plastic Medium Power Bipolar Transistors PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;> | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
BD237 | Silicon NPN Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
BD237 | Low voltage NPN power transistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD237 | Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | |
BD237 | NPN power transistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD237 | TO-126 Plastic-Encapsulate Transistors FEATURES ComplementtoBD234/BD236/BD238respectively | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | |
BD237 | 80V, NPN TRANSISTORS DESCRIPTION TheUTCBD237isanNPNtransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,etc. FEATURES *ComplementtoUTCBD238respectively *Highcollector-emitterbreakdownvoltage | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | |
BD237 | EPITAXIAL SILICON POWER TRANSISTORS EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications | CDIL Continental Device India Limited | CDIL | |
BD237 | NPN Plastic-Encapsulate Transistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •PowerDissipation:PCM=1.25W,Ta=25°C •CollectorCurrent:IC=2A •ComplementtoBD234/236/238respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Epoxy | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | |
BD237 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
BD237 | TRANSISTOR (NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | |
BD237 | isc Silicon NPN Power Transistor DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
BD237 | Silicon NPN transistor in a TO-126 Plastic Package. Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features ComplementarypairwithBD238. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | |
BD237 | Silicon NPN Power Transistor DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
2A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD179,BD379,BD441,3DD61D,
- 最大耗散功率：
25W
- 放大倍数：
- 图片代号：
B-21
- vtest：
100
- htest：
999900
- atest：
2
- wtest：
25
产品属性
- 产品编号：
BD237
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
NPN
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
600mV @ 100mA，1A
- 电流 - 集电极截止（最大值）：
100µA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
25 @ 1A，2V
- 工作温度：
150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
SOT-32-3
- 描述：
TRANS NPN 80V 2A SOT32-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
21+ |
SOT-32-3 (TO-126-3) |
1000 |
询价 | |||
ST |
18+ |
TO-126 |
36000 |
一级代理/全新原装现货/长期供应! |
询价 | ||
STM |
21+ |
SOT-32-3 (TO-126-3) |
2000 |
原装正品 有挂有货 |
询价 | ||
STM |
21+ |
2000 |
SOT-32-3 (TO-126-3) |
询价 | |||
CJ |
24+ |
TO-126 |
100 |
只做原装 |
询价 | ||
STM |
23+ |
SOT-32-3 (TO-126-3) |
1000 |
原装现货支持送检 |
询价 | ||
ST/意法半导体 |
2023 |
SOT-32-3 |
6000 |
公司原装现货/支持实单 |
询价 | ||
ST/意法半导体 |
23+ |
SOT-32-3 |
4650 |
绝对原装公司现货 |
询价 | ||
ST/意法 |
23+/24+ |
TO126 |
9865 |
主推型号,原装正品,终端BOM表可配单,可开13点税 |
询价 | ||
ST MICROELETTRONICS |
2425+ |
原厂封装 |
755 |
原装正品渠道可追溯 |
询价 |